CS192827B1 - Multilayer semiconductor element - Google Patents

Multilayer semiconductor element

Info

Publication number
CS192827B1
CS192827B1 CS775127A CS512777A CS192827B1 CS 192827 B1 CS192827 B1 CS 192827B1 CS 775127 A CS775127 A CS 775127A CS 512777 A CS512777 A CS 512777A CS 192827 B1 CS192827 B1 CS 192827B1
Authority
CS
Czechoslovakia
Prior art keywords
semiconductor element
multilayer semiconductor
multilayer
semiconductor
Prior art date
Application number
CS775127A
Other languages
Czech (cs)
Inventor
Bohumil Pina
Jaroslav Homola
Original Assignee
Bohumil Pina
Jaroslav Homola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bohumil Pina, Jaroslav Homola filed Critical Bohumil Pina
Priority to CS775127A priority Critical patent/CS192827B1/en
Priority to DD78207006A priority patent/DD137640A1/en
Priority to DE19782833917 priority patent/DE2833917A1/en
Publication of CS192827B1 publication Critical patent/CS192827B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
CS775127A 1977-08-02 1977-08-02 Multilayer semiconductor element CS192827B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CS775127A CS192827B1 (en) 1977-08-02 1977-08-02 Multilayer semiconductor element
DD78207006A DD137640A1 (en) 1977-08-02 1978-07-28 MULTI-LAYER SEMICONDUCTOR ELEMENT
DE19782833917 DE2833917A1 (en) 1977-08-02 1978-08-02 Multiple layer power semiconductor element - has specific distance of emitter shunts between outer layer and one main electrode with mutual spacing increased away from boundary surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS775127A CS192827B1 (en) 1977-08-02 1977-08-02 Multilayer semiconductor element

Publications (1)

Publication Number Publication Date
CS192827B1 true CS192827B1 (en) 1979-09-17

Family

ID=5395547

Family Applications (1)

Application Number Title Priority Date Filing Date
CS775127A CS192827B1 (en) 1977-08-02 1977-08-02 Multilayer semiconductor element

Country Status (3)

Country Link
CS (1) CS192827B1 (en)
DD (1) DD137640A1 (en)
DE (1) DE2833917A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683946B1 (en) * 1991-11-15 1997-05-09 Sgs Thomson Microelectronics SEMICONDUCTOR COMPONENT FOR PROTECTION AGAINST OVERVOLTAGES.
DE102017130330B3 (en) 2017-12-18 2019-02-14 Semikron Elektronik Gmbh & Co. Kg Thyristor with a semiconductor body

Also Published As

Publication number Publication date
DD137640A1 (en) 1979-09-12
DE2833917A1 (en) 1979-02-15

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