CS192827B1 - Multilayer semiconductor element - Google Patents

Multilayer semiconductor element

Info

Publication number
CS192827B1
CS192827B1 CS512777A CS512777A CS192827B1 CS 192827 B1 CS192827 B1 CS 192827B1 CS 512777 A CS512777 A CS 512777A CS 512777 A CS512777 A CS 512777A CS 192827 B1 CS192827 B1 CS 192827B1
Authority
CS
Czechoslovakia
Prior art keywords
semiconductor element
multilayer semiconductor
multilayer
semiconductor
Prior art date
Application number
CS512777A
Other languages
Czech (cs)
Inventor
Bohumil Pina
Jaroslav Homola
Original Assignee
Bohumil Pina
Jaroslav Homola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bohumil Pina, Jaroslav Homola filed Critical Bohumil Pina
Priority to CS512777A priority Critical patent/CS192827B1/en
Priority to DD20700678A priority patent/DD137640A1/en
Priority to DE19782833917 priority patent/DE2833917A1/en
Publication of CS192827B1 publication Critical patent/CS192827B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CS512777A 1977-08-02 1977-08-02 Multilayer semiconductor element CS192827B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CS512777A CS192827B1 (en) 1977-08-02 1977-08-02 Multilayer semiconductor element
DD20700678A DD137640A1 (en) 1977-08-02 1978-07-28 MULTI-LAYER SEMICONDUCTOR ELEMENT
DE19782833917 DE2833917A1 (en) 1977-08-02 1978-08-02 Multiple layer power semiconductor element - has specific distance of emitter shunts between outer layer and one main electrode with mutual spacing increased away from boundary surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS512777A CS192827B1 (en) 1977-08-02 1977-08-02 Multilayer semiconductor element

Publications (1)

Publication Number Publication Date
CS192827B1 true CS192827B1 (en) 1979-09-17

Family

ID=5395547

Family Applications (1)

Application Number Title Priority Date Filing Date
CS512777A CS192827B1 (en) 1977-08-02 1977-08-02 Multilayer semiconductor element

Country Status (3)

Country Link
CS (1) CS192827B1 (en)
DD (1) DD137640A1 (en)
DE (1) DE2833917A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683946B1 (en) * 1991-11-15 1997-05-09 Sgs Thomson Microelectronics SEMICONDUCTOR COMPONENT FOR PROTECTION AGAINST OVERVOLTAGES.
DE102017130330B3 (en) 2017-12-18 2019-02-14 Semikron Elektronik Gmbh & Co. Kg Thyristor with a semiconductor body

Also Published As

Publication number Publication date
DD137640A1 (en) 1979-09-12
DE2833917A1 (en) 1979-02-15

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