DE69401476T2 - Rastersteuerung für Ionenstrahl-Gerät - Google Patents

Rastersteuerung für Ionenstrahl-Gerät

Info

Publication number
DE69401476T2
DE69401476T2 DE69401476T DE69401476T DE69401476T2 DE 69401476 T2 DE69401476 T2 DE 69401476T2 DE 69401476 T DE69401476 T DE 69401476T DE 69401476 T DE69401476 T DE 69401476T DE 69401476 T2 DE69401476 T2 DE 69401476T2
Authority
DE
Germany
Prior art keywords
ion beam
beam device
grid control
grid
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69401476T
Other languages
English (en)
Other versions
DE69401476D1 (de
Inventor
Bavel Marcus Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of DE69401476D1 publication Critical patent/DE69401476D1/de
Application granted granted Critical
Publication of DE69401476T2 publication Critical patent/DE69401476T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/2025—Sensing velocity of translation or rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled
DE69401476T 1993-09-20 1994-09-19 Rastersteuerung für Ionenstrahl-Gerät Expired - Fee Related DE69401476T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12314893A 1993-09-20 1993-09-20
US08/193,436 US5432352A (en) 1993-09-20 1994-02-08 Ion beam scan control

Publications (2)

Publication Number Publication Date
DE69401476D1 DE69401476D1 (de) 1997-02-27
DE69401476T2 true DE69401476T2 (de) 1997-08-07

Family

ID=26821283

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401476T Expired - Fee Related DE69401476T2 (de) 1993-09-20 1994-09-19 Rastersteuerung für Ionenstrahl-Gerät

Country Status (6)

Country Link
US (1) US5432352A (de)
EP (1) EP0644573B1 (de)
JP (1) JPH07182999A (de)
KR (1) KR100254929B1 (de)
DE (1) DE69401476T2 (de)
TW (1) TW266306B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19912766A1 (de) * 1998-12-03 2000-06-08 Continental Teves Ag & Co Ohg Schaltungsanordnung mit A/D-Wandler für sicherheitskritische Anwendungen
US6518900B1 (en) 1998-12-03 2003-02-11 Continential Teves Ag & Co., Ohg Circuit configuration for testing and A/D converter for applications that are critical in terms of safety

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU8739091A (en) * 1990-09-18 1992-04-15 Thomas James Frederick Digital servo control system for use in disk drives
JP3003088B2 (ja) * 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
US5981961A (en) * 1996-03-15 1999-11-09 Applied Materials, Inc. Apparatus and method for improved scanning efficiency in an ion implanter
US6239440B1 (en) 1996-03-27 2001-05-29 Thermoceramix, L.L.C. Arc chamber for an ion implantation system
US5857889A (en) * 1996-03-27 1999-01-12 Thermoceramix, Llc Arc Chamber for an ion implantation system
US6022258A (en) * 1996-03-27 2000-02-08 Thermoceramix, Llc ARC chamber for an ion implantation system
US5914494A (en) * 1996-03-27 1999-06-22 Thermoceramix, Llc Arc chamber for an ion implantation system
KR100581154B1 (ko) * 1996-05-15 2006-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이온도핑장치및도핑방법
US6229148B1 (en) 1997-08-11 2001-05-08 Micron Technology, Inc. Ion implantation with programmable energy, angle, and beam current
JPH11110899A (ja) * 1997-10-02 1999-04-23 Alps Electric Co Ltd ディスクの回転駆動装置
US6107108A (en) * 1998-08-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Dosage micro uniformity measurement in ion implantation
KR100563982B1 (ko) * 1998-10-19 2006-03-29 가부시키가이샤 야스카와덴키 클린 로봇의 안전 보호 장치
US6255662B1 (en) 1998-10-27 2001-07-03 Axcelis Technologies, Inc. Rutherford backscattering detection for use in Ion implantation
US6374144B1 (en) * 1998-12-22 2002-04-16 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling a system using hierarchical state machines
EP1056114A3 (de) * 1999-05-24 2007-05-09 Applied Materials, Inc. Ionenimplantierungsgerät
US7547460B2 (en) * 2000-09-15 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Ion implanter optimizer scan waveform retention and recovery
KR101123532B1 (ko) * 2004-04-05 2012-03-12 액셀리스 테크놀로지스, 인크. 이온 빔을 통해 공작물을 왕복 운동하는 방법
US6903350B1 (en) 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7365346B2 (en) * 2004-12-29 2008-04-29 Matsushita Electric Industrial Co., Ltd. Ion-implanting apparatus, ion-implanting method, and device manufactured thereby
US7208330B2 (en) * 2005-01-12 2007-04-24 Texas Instruments Incorporated Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate
US7391038B2 (en) * 2006-03-21 2008-06-24 Varian Semiconductor Equipment Associates, Inc. Technique for isocentric ion beam scanning
TWI435378B (zh) * 2006-04-26 2014-04-21 Axcelis Tech Inc 劑量均勻性校正方法
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5116996B2 (ja) * 2006-06-20 2013-01-09 キヤノン株式会社 荷電粒子線描画方法、露光装置、及びデバイス製造方法
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
US7586111B2 (en) * 2007-07-31 2009-09-08 Axcelis Technologies, Inc. Ion implanter having combined hybrid and double mechanical scan architecture
US7928413B2 (en) * 2008-01-03 2011-04-19 Applied Materials, Inc. Ion implanters
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法
JP6476594B2 (ja) * 2014-05-26 2019-03-06 オムロン株式会社 シミュレーションシステム
JP6427369B2 (ja) * 2014-09-16 2018-11-21 東芝機械株式会社 動力伝達手段の異常検出装置、成形装置及び動力伝達手段の異常検出方法
CN111243926A (zh) * 2018-11-29 2020-06-05 江苏鲁汶仪器有限公司 一种载台系统
CN112259431A (zh) * 2020-10-14 2021-01-22 北京烁科中科信电子装备有限公司 一种基于位置补偿的靶台工位控制方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125828A (en) * 1972-08-04 1978-11-14 Med-El Inc. Method and apparatus for automated classification and analysis of cells
US4749867A (en) * 1985-04-30 1988-06-07 Canon Kabushiki Kaisha Exposure apparatus
US4775796A (en) * 1987-01-06 1988-10-04 Purser Kenneth H Treating workpieces with beams
US5262651A (en) * 1989-11-30 1993-11-16 Texas Instruments Incorporated Positron beam lithography
JPH04334859A (ja) * 1991-05-10 1992-11-20 Hitachi Ltd イオン打込装置のスキャン速度制御法
US5323012A (en) * 1991-08-16 1994-06-21 The Regents Of The University Of California Apparatus for positioning a stage
JP2595149B2 (ja) * 1991-09-25 1997-03-26 株式会社日立製作所 電子線描画装置
US5229615A (en) * 1992-03-05 1993-07-20 Eaton Corporation End station for a parallel beam ion implanter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19912766A1 (de) * 1998-12-03 2000-06-08 Continental Teves Ag & Co Ohg Schaltungsanordnung mit A/D-Wandler für sicherheitskritische Anwendungen
US6518900B1 (en) 1998-12-03 2003-02-11 Continential Teves Ag & Co., Ohg Circuit configuration for testing and A/D converter for applications that are critical in terms of safety

Also Published As

Publication number Publication date
JPH07182999A (ja) 1995-07-21
KR950009916A (ko) 1995-04-26
EP0644573A1 (de) 1995-03-22
TW266306B (de) 1995-12-21
EP0644573B1 (de) 1997-01-15
DE69401476D1 (de) 1997-02-27
US5432352A (en) 1995-07-11
KR100254929B1 (ko) 2000-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AXCELIS TECHNOLOGIES, INC., BEVERLY, MASS., US

8339 Ceased/non-payment of the annual fee