KR900012339A - 이온 주입장치 - Google Patents

이온 주입장치

Info

Publication number
KR900012339A
KR900012339A KR1019900000029A KR900000029A KR900012339A KR 900012339 A KR900012339 A KR 900012339A KR 1019900000029 A KR1019900000029 A KR 1019900000029A KR 900000029 A KR900000029 A KR 900000029A KR 900012339 A KR900012339 A KR 900012339A
Authority
KR
South Korea
Prior art keywords
ion implanter
implanter
ion
Prior art date
Application number
KR1019900000029A
Other languages
English (en)
Other versions
KR960003496B1 (ko
Inventor
마우리스 벤베니스트 빅터
피울 보이찌우 레이몬드
Original Assignee
이턴 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이턴 코오포레이숀 filed Critical 이턴 코오포레이숀
Publication of KR900012339A publication Critical patent/KR900012339A/ko
Application granted granted Critical
Publication of KR960003496B1 publication Critical patent/KR960003496B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1019900000029A 1989-01-04 1990-01-04 이온 주입장치 KR960003496B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/293,334 US4914305A (en) 1989-01-04 1989-01-04 Uniform cross section ion beam system
US293,334 1989-01-04

Publications (2)

Publication Number Publication Date
KR900012339A true KR900012339A (ko) 1990-08-03
KR960003496B1 KR960003496B1 (ko) 1996-03-14

Family

ID=23128659

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000029A KR960003496B1 (ko) 1989-01-04 1990-01-04 이온 주입장치

Country Status (5)

Country Link
US (1) US4914305A (ko)
EP (1) EP0377298B1 (ko)
JP (1) JP2873704B2 (ko)
KR (1) KR960003496B1 (ko)
DE (1) DE68916776T2 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
GB9021629D0 (en) * 1990-10-04 1990-11-21 Superion Ltd Apparatus for and method of producing ion beams
US5134299A (en) * 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
US5218210A (en) * 1992-02-18 1993-06-08 Eaton Corporation Broad beam flux density control
US5280174A (en) * 1993-01-25 1994-01-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for producing a thermal atomic oxygen beam
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
KR100249307B1 (ko) * 1997-05-13 2000-03-15 윤종용 이온주입설비의 분석기
US6060715A (en) * 1997-10-31 2000-05-09 Applied Materials, Inc. Method and apparatus for ion beam scanning in an ion implanter
US6949895B2 (en) * 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US7285779B2 (en) 2004-06-21 2007-10-23 Applied Materials Israel, Ltd. Methods of scanning an object that includes multiple regions of interest using an array of scanning beams
US7019314B1 (en) 2004-10-18 2006-03-28 Axcelis Technologies, Inc. Systems and methods for ion beam focusing
US7598505B2 (en) * 2005-03-08 2009-10-06 Axcelis Technologies, Inc. Multichannel ion gun
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
US7928413B2 (en) * 2008-01-03 2011-04-19 Applied Materials, Inc. Ion implanters
JP5988570B2 (ja) 2010-12-31 2016-09-07 エフ・イ−・アイ・カンパニー 選択可能な複数の粒子放出器を備える荷電粒子源
JP7132828B2 (ja) * 2018-11-13 2022-09-07 住友重機械イオンテクノロジー株式会社 イオン注入装置およびビームパーク装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3795833A (en) * 1972-05-25 1974-03-05 Hughes Aircraft Co Ion beam deflection system
US3845312A (en) * 1972-07-13 1974-10-29 Texas Instruments Inc Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density
FR2537768A1 (fr) * 1982-12-08 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'obtention de faisceaux de particules de densite spatialement modulee, application a la gravure et a l'implantation ioniques
US4578589A (en) * 1983-08-15 1986-03-25 Applied Materials, Inc. Apparatus and methods for ion implantation
US4522657A (en) * 1983-10-20 1985-06-11 Westinghouse Electric Corp. Low temperature process for annealing shallow implanted N+/P junctions
US4523971A (en) * 1984-06-28 1985-06-18 International Business Machines Corporation Programmable ion beam patterning system
DE3504714A1 (de) * 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Lithografiegeraet zur erzeugung von mikrostrukturen

Also Published As

Publication number Publication date
EP0377298A3 (en) 1991-02-27
EP0377298B1 (en) 1994-07-13
JP2873704B2 (ja) 1999-03-24
DE68916776T2 (de) 1995-03-02
US4914305A (en) 1990-04-03
JPH02226645A (ja) 1990-09-10
DE68916776D1 (de) 1994-08-18
KR960003496B1 (ko) 1996-03-14
EP0377298A2 (en) 1990-07-11

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Legal Events

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E902 Notification of reason for refusal
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