EP0377298A2 - Uniform cross section ion beam system - Google Patents
Uniform cross section ion beam system Download PDFInfo
- Publication number
- EP0377298A2 EP0377298A2 EP89313242A EP89313242A EP0377298A2 EP 0377298 A2 EP0377298 A2 EP 0377298A2 EP 89313242 A EP89313242 A EP 89313242A EP 89313242 A EP89313242 A EP 89313242A EP 0377298 A2 EP0377298 A2 EP 0377298A2
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- EP
- European Patent Office
- Prior art keywords
- ion
- ions
- section
- electrodes
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
- The present invention relates to an ion beam system for treating a workpiece.
- Ion beam treatment of workpieces such as silicon wafers for manufacture of semiconductor material is well-known in the prior art. Charged ions are created and accelerated to a specific velocity and caused to impinge upon a workpiece such as a silicon wafer. The prior art techniques for doping silicon wafers to produce semiconductor material are broadly divided into two classes of implanters.
- High dose implanters typically use an ion source and focusing components for directing a high energy ion beam along a specified travel path. At an implant zone or station, the workpiece to be implanted is mechanically moved through the high energy ion beam in a controlled fashion to achieve uniform ion beam treatment of the workpiece. A U.S. prior art patent assigned to the Eaton Corporation which discloses and describes such a high energy ion implantation system is U.S. Patent No. 4,234,797 to Ryding. This patent is incorporated herein by reference.
- A second broad class of ion implantation systems use less intense ion beams which can be controllably deflected away from an initial trajectory to impinge upon different zones or areas at an implantation station. This type of lower intensity system also includes an ion beam source and focusing components for directing an ion beam along a specified trajectory. Along this trajectory, however, are positioned electric field creating electrodes which are energized in a controlled manner to deflect the ion beam away from the initial trajectory to the workpiece, typically a silicon wafer used in semiconductor manufacture. By controlling the voltage on the scanning electrodes, a uniform pattern of ion doping of the silicon wafer can be achieved. A representative U.S. patent disclosing a low energy ion implantation system is disclosed in U.S. Patent No. 4,736,107 to Myron which is also assigned to the Eaton Corporation and is incorporated herein by reference.
- Each of the two broad classes of ion implantation systems have advantages and disadvantages. The high current ion beam implantation technique has generally resulted in reduced wafer throughput and required large, costly wafer handling stations to move the wafer through the ion beam.
- Deflection scanning systems used with lower current ion beam implantation have advantages in size and simplicity but suffer a disadvantage due to the varying angle of beam incidence the ions impinge upon the wafer. This varying angle of incidence is due to the electrode scanning of the ion beam side to side across the surface of the silicon wafer.
- One object of the present invention is an ion implantation system that combines the advantages of low and high current ion beam implanters and avoids some of the disadvantages of each type implanter.
- An ion implantation system constructed in accordance with the present invention includes an ion source for providing a plurality of ion beams which collectively form the workpiece implantation beam. A number of beam deflection plates arranged in a matrix intercept and selectively deflect the ion beams to control ion beam intensity across the collective ion beam. The beam deflector plates of the invention are not used to cause the ions to be deflected to a particular region on the workpiece. They instead totally deflect the ions from the workpiece implantation beam. In this way the ion distribution from the ion source can be controlled to achieve a desired ion distribution at the workpiece surface.
- A mass analyzer downstream from the deflection plates analyzes ions according to mass and also separates ions that have been deflected by the deflection plates away from the collective beam into a beam waist. Within the mass analyzer the beam envelope exhibits two distinct waists, one in the dispersive plane coincides with the resolving slit, another in the non-dispersive plane which is orthogonal to the dispersive plane coincides with a gating slit located for the purpose of intercepting deflected beamlets. Because beamlet deflections occur in the non-dispersive plane it will not interfere with the mass dispersion process. At a wafer treatment station, the wafers are placed in position to intercept ions exiting the mass analyzer.
- An array of switches coupled to a control system biases deflection plates comprising the matrix and controls the ion distribution striking the wafer. This control system adjusts ion dosage impacting the wafer without need for sophisticated scanning electrodes and voltage control algorithms for those electrodes. It also avoids the necessity of mechanically scanning the wafers through an ion beam as required by prior art high current implanters.
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- Figure 1 is a schematic depiction an ion implantation system;
- Figure 2 is a perspective depiction of a beam source;
- Figure 3 is a depiction showing the relative position of deflection electrodes for deflecting ions away from initial trajectories the ions traverse as they exit the Figure 2 beam source;
- Figure 4 is an elevation schematic view of an alternate set of deflection plates for deflecting ions away from their initial trajectory; and
- Figure 5 is perspective view showing an array of electrode sites and activating circuitry for such an array.
- Turning now to the drawings, Figure 1 depicts an ion implantation system including a low energy (2kv)
ion source 10 for emitting ions that travel along atrajectory 11 passing through anion distribution control 12. Thesource 10 emits a plurality of small cross section beams which diffuse as they move along the travel path and combine to form abeam 14. Individual beams within thebeam 14 are referred to as "beamlets" 13 and are schematically depicted in Figure 2. - The
control 12 selectively adjusts the intensity of ions within the cross section of theion beam 14 by controlled deflection of ions within a givenbeamlet 13 before they diffuse to form the combinedbeam 14. - The
beam 14 passes through an analyzing or resolvingmagnet 16 where the ions are bent in a manner dependent upon their mass and charge. Downstream from the resolvingmagnet 16, the ions in thebeam 14 enter a metallicresolving slit 18 that defines a beam waist in a dispersive plane. Ions deflected by thecontrol 12 are removed from thebeam 14 by agating slit 17 approximately midway along the travel path through themagnet 16 which defines a beam waist in a non-dispersive plane. Those ions passing through the resolving slit are further accelerated by two acceleratingtubes workpiece 22. The two acceleratingtubes tubes workpiece 22 are controlled. - The
wafer 22 is moved to and from a proper position and orientation in theion beam 14 by automatic wafer handling apparatus. Since thebeam 14 is in a highly evacuated chamber from the source to the region of thewafer 22, this apparatus must move the wafers from atmospheric to very low pressure. Apparatus for accomplishing this task is known in the prior art. - The
intensity control 12 selectively attenuates beamlets comprising theaggregate beam 14 to allow ion implantation dose at theworkpiece 22 to be selectively controlled and typically made uniform. No wafer scanning at the implantation station is needed since thesource 10 produces a largeenough beam 14 to completely cover the implantation surface of theworkpiece 20. Additionally, no scanning electrodes are needed and therefore the electronics needed to adjust the voltage on such electrodes are avoided. - In accordance with one embodiment of the invention, the
source 10 is a multi-aperture Kaufman-type source capable of producing ions having an energy of approximately 1 kilovolt and currents of approximately 24 milliamps per centimeter. The specific source utilized in the embodiment shown in Figure 1 includes a 3 centimeter diameter ion emitting area having 49 holes arranged in seven rows and seven columns with a total current capability of 125 milliamps. - The
control 12 includes an array of electrodes which selectively deflect the ions from the beam. A representative sub-set of electrodes for part of a bottom row of beamlets is depicted in Figure 3. - In accordance with this embodiment, two
deflection plates beamlet 13. A small voltage (about 10 volts) applied across theplates gating slit 17. Aswitching array 26 coupled to each pair ofelectrodes programmable controller 28 the ion distribution across thebeam 14 is adjusted. As an example, each pair ofelectrodes beamlet 13 are energized in turn for a controlled adjustable duration. This allows the ion dose to be both increased and decreased above and below a norm by adjusting the electrode energization interval. - The
electrodes - An alternate technique of accomplishing beamlet deflection uses electrodes that are interconnected along a given row or given column in an N x M matrix of electrodes. In this control scheme only a beamlet at the intersection of an activated row and column is substantially deflected. This scheme uses interleaved quadruple triplet lens arrangements above and below a beamlet trajectory. A representative quadruple triplet is depicted in Figure 4.
- Figure 4 depicts a
beamlet 13 passing through twelve electrodes arranged as two quadruple triplet lenses. Six electrodes 30-35 form one quadruple lens which can be activated by electrically energizing the electrodes. In the depiction of Figure 4, the twoelectrodes electrode 30 is activated so is theelectrode 31. In addition, aconductor 36 connects theelectrodes electrodes - Interleaved with the electrodes 30-35 are a set of six additional electrodes 40-45 which can also be activated under control of a switching array described below. In this second quadruple triplet the
electrodes electrodes conductor 46. In summary, the electrodes 30-35 form a first quadruple lens which is interleaved with a second lens defined by the electrodes 40-45. Three possible trajectories of anion beamlet 13 entering the interleaved quadruple lenses are depicted in Figure 4. when only one of the quadruple lenses is activated (by energization of the electrodes that°make up that lens), electrical fields are set up to cause a focusing of the ion beam back to an initial trajectory. If, however, both of the quadruple lenses are activated by suitable energizations described below, ions from thisbeamlet 13 are deflected to such an extent that the beamlet exits thebeam 14 at the slit 18 (Figure 1). This allows selective beam attenuation in a controlled manner described below in conjunction with a switch array for activating the interleaved quadruple triplets. - Figure 5 depicts a portion of an
array 50 of quadruple pairs schematically depicted as ovals. It is appreciated that each oval corresponds to a triplet such as that depicted in Figure 4. Thearray 50 is selectively activated by a number ofswitches 52, 54 which are designated as row switches and column switches in Figure 5. In addition, each switch includes two switch contacts since both positive and negative voltages are routed to a given quadruple lens within the matrix array. Although five row switches and four column switches are depicted in Figure 5, it is appreciated that for asource 10 that produces seven rows and seven columns of beamlets a total of 49 quadruple pairs are needed. - A
representative beamlet 13 is seen passing through the quadruple lens pair identified as row "c", column "B". When neither switch 52c or 54B is closed or when one or the other of these two switches is closed ions that make up the beamlet will strike thewafer 22. To attenuate thebeamlet 13′ both switches 52c, 54B must be closed to energize all electrodes of the interleaved quadruple pair at the row c, column B matrix position. - The quadruple triplet pair at each matrix position is electrically coupled to all other matrix positions within a given row and column. This reduces the number of switches necessary to controllably activate the array SO. In a preferred embodiment wherein 49 beamlets are combined to form the ion beam, 14 switches, one for each row and one for each column, are needed to selectively activate the
array 50 and control beam intensity of the beamlets passing through that array. - As noted above, the intersection of an activated switch combination attenuates the beamlet passing through that position and by controlling the time a given switch combination is active, the beam intensity for a given beamlet is controlled.
- By sequentially scanning the
matrix 50 at a fixed frequency, and pulsing each beamlet on and off at a different duty cycle, it is possible to attain a desired average intensity distribution required for uniform distribution at theworkpiece 20. - In the merged beam technique depicted in Figure 1, the
magnet 16 focuses the individual beamlets forming thebeam 14 into a single merged beam which is resolved through asingle slit 18 and then accelerated as a single beam. - Certain advantages accompany use of this merged beam technique over a technique where each of the beamlets are resolved and accelerated. The resolving magnet gap is kept small since the
source 10 itself is smaller in cross section. The common resolvingslit 18 is easier to accomplish than would be multiple slits, one for each individual beamlet. Resolving and ion acceleration are achieved more easily since duplicate acceleration electrodes for each beamlet are not needed. In addition, the simplicity of the post acceleration apparatus results in fewer surfaces to accumulate condensates. - The utilization of a large cross sectional source which produces multiple beamlets results in a non-scanning, non-deflecting ion beam system for ion implantation of a workpiece. while a preferred embodiment of the invention has been described, it is the intent that the invention cover modifications from this embodiment falling within the spirit or scope of the appended claims.
Claims (8)
emitting ions from a plurality of apertures to form a plurality of small cross section ion beams (13) that move along generally parallel trajectories and in combination form a larger cross section workpiece treatment beam (14); characterized by
controllably deflecting ions in selected ones of the small cross section ion beams;
intercepting the ions from the small cross section ion beams with a resolving magnet (16) which bends the ions along a trajectory to cause the controllably deflected ions to be lost from the workpiece treatment beam; and
accelerating ions exiting the resolving magnet that remain in the large cross section workpiece treatment beam to a controlled energy before those ions impact a stationary workpiece (22) at a workpiece implantation station.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/293,334 US4914305A (en) | 1989-01-04 | 1989-01-04 | Uniform cross section ion beam system |
US293334 | 1989-01-04 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0377298A2 true EP0377298A2 (en) | 1990-07-11 |
EP0377298A3 EP0377298A3 (en) | 1991-02-27 |
EP0377298B1 EP0377298B1 (en) | 1994-07-13 |
Family
ID=23128659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP89313242A Expired - Lifetime EP0377298B1 (en) | 1989-01-04 | 1989-12-18 | Uniform cross section ion beam system |
Country Status (5)
Country | Link |
---|---|
US (1) | US4914305A (en) |
EP (1) | EP0377298B1 (en) |
JP (1) | JP2873704B2 (en) |
KR (1) | KR960003496B1 (en) |
DE (1) | DE68916776T2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7285779B2 (en) | 2004-06-21 | 2007-10-23 | Applied Materials Israel, Ltd. | Methods of scanning an object that includes multiple regions of interest using an array of scanning beams |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2648642B2 (en) * | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for performing ion implantation with a wide beam |
GB9021629D0 (en) * | 1990-10-04 | 1990-11-21 | Superion Ltd | Apparatus for and method of producing ion beams |
US5134299A (en) * | 1991-03-13 | 1992-07-28 | Eaton Corporation | Ion beam implantation method and apparatus for particulate control |
US5218210A (en) * | 1992-02-18 | 1993-06-08 | Eaton Corporation | Broad beam flux density control |
US5280174A (en) * | 1993-01-25 | 1994-01-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and apparatus for producing a thermal atomic oxygen beam |
US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
KR100249307B1 (en) * | 1997-05-13 | 2000-03-15 | 윤종용 | Analyzer of Ion implanting apparatus |
US6060715A (en) * | 1997-10-31 | 2000-05-09 | Applied Materials, Inc. | Method and apparatus for ion beam scanning in an ion implanter |
US6949895B2 (en) * | 2003-09-03 | 2005-09-27 | Axcelis Technologies, Inc. | Unipolar electrostatic quadrupole lens and switching methods for charged beam transport |
US7019314B1 (en) | 2004-10-18 | 2006-03-28 | Axcelis Technologies, Inc. | Systems and methods for ion beam focusing |
US7598505B2 (en) * | 2005-03-08 | 2009-10-06 | Axcelis Technologies, Inc. | Multichannel ion gun |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
US7928413B2 (en) * | 2008-01-03 | 2011-04-19 | Applied Materials, Inc. | Ion implanters |
JP5988570B2 (en) | 2010-12-31 | 2016-09-07 | エフ・イ−・アイ・カンパニー | Charged particle source comprising a plurality of selectable particle emitters |
JP7132828B2 (en) * | 2018-11-13 | 2022-09-07 | 住友重機械イオンテクノロジー株式会社 | Ion implanter and beam parker |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3547074A (en) * | 1967-04-13 | 1970-12-15 | Block Engineering | Apparatus for forming microelements |
US3845312A (en) * | 1972-07-13 | 1974-10-29 | Texas Instruments Inc | Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density |
EP0112230A1 (en) * | 1982-12-08 | 1984-06-27 | Commissariat A L'energie Atomique | Method and apparatus for obtaining particle beams the density of which is spatially modulated, application to etching and to ion implantation |
EP0167360A2 (en) * | 1984-06-28 | 1986-01-08 | International Business Machines Corporation | Programmable ion beam patterning system |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3795833A (en) * | 1972-05-25 | 1974-03-05 | Hughes Aircraft Co | Ion beam deflection system |
US4578589A (en) * | 1983-08-15 | 1986-03-25 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US4522657A (en) * | 1983-10-20 | 1985-06-11 | Westinghouse Electric Corp. | Low temperature process for annealing shallow implanted N+/P junctions |
DE3504714A1 (en) * | 1985-02-12 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | LITHOGRAPH DEVICE FOR GENERATING MICROSTRUCTURES |
-
1989
- 1989-01-04 US US07/293,334 patent/US4914305A/en not_active Expired - Lifetime
- 1989-12-18 EP EP89313242A patent/EP0377298B1/en not_active Expired - Lifetime
- 1989-12-18 DE DE68916776T patent/DE68916776T2/en not_active Expired - Fee Related
- 1989-12-28 JP JP1345040A patent/JP2873704B2/en not_active Expired - Fee Related
-
1990
- 1990-01-04 KR KR1019900000029A patent/KR960003496B1/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3547074A (en) * | 1967-04-13 | 1970-12-15 | Block Engineering | Apparatus for forming microelements |
US3845312A (en) * | 1972-07-13 | 1974-10-29 | Texas Instruments Inc | Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density |
EP0112230A1 (en) * | 1982-12-08 | 1984-06-27 | Commissariat A L'energie Atomique | Method and apparatus for obtaining particle beams the density of which is spatially modulated, application to etching and to ion implantation |
EP0167360A2 (en) * | 1984-06-28 | 1986-01-08 | International Business Machines Corporation | Programmable ion beam patterning system |
Non-Patent Citations (1)
Title |
---|
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION B vol. 21, no. 2-4, March 1987, AMSTERDAM pages 235 - 238; K Komatsu et al.: "High currrent ion implanter aimed at clean and dust-free production" * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7285779B2 (en) | 2004-06-21 | 2007-10-23 | Applied Materials Israel, Ltd. | Methods of scanning an object that includes multiple regions of interest using an array of scanning beams |
Also Published As
Publication number | Publication date |
---|---|
KR960003496B1 (en) | 1996-03-14 |
EP0377298B1 (en) | 1994-07-13 |
KR900012339A (en) | 1990-08-03 |
DE68916776D1 (en) | 1994-08-18 |
JP2873704B2 (en) | 1999-03-24 |
DE68916776T2 (en) | 1995-03-02 |
JPH02226645A (en) | 1990-09-10 |
EP0377298A3 (en) | 1991-02-27 |
US4914305A (en) | 1990-04-03 |
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