DE69021435D1 - Ionen-Implantationsgerät. - Google Patents

Ionen-Implantationsgerät.

Info

Publication number
DE69021435D1
DE69021435D1 DE69021435T DE69021435T DE69021435D1 DE 69021435 D1 DE69021435 D1 DE 69021435D1 DE 69021435 T DE69021435 T DE 69021435T DE 69021435 T DE69021435 T DE 69021435T DE 69021435 D1 DE69021435 D1 DE 69021435D1
Authority
DE
Germany
Prior art keywords
ion implantation
implantation device
ion
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021435T
Other languages
English (en)
Other versions
DE69021435T2 (de
Inventor
Mamoru Nogami
Kazuhiro Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of DE69021435D1 publication Critical patent/DE69021435D1/de
Application granted granted Critical
Publication of DE69021435T2 publication Critical patent/DE69021435T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
DE69021435T 1989-05-15 1990-05-15 Ionen-Implantationsgerät. Expired - Fee Related DE69021435T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12245089 1989-05-15
JP14091289 1989-06-01

Publications (2)

Publication Number Publication Date
DE69021435D1 true DE69021435D1 (de) 1995-09-14
DE69021435T2 DE69021435T2 (de) 1996-01-25

Family

ID=26459573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021435T Expired - Fee Related DE69021435T2 (de) 1989-05-15 1990-05-15 Ionen-Implantationsgerät.

Country Status (5)

Country Link
US (1) US5068539A (de)
EP (1) EP0398269B1 (de)
JP (1) JPH0770296B2 (de)
KR (1) KR930005735B1 (de)
DE (1) DE69021435T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
US5198676A (en) * 1991-09-27 1993-03-30 Eaton Corporation Ion beam profiling method and apparatus
JP3125384B2 (ja) * 1991-11-14 2001-01-15 日本電気株式会社 イオン注入装置
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
US5801386A (en) * 1995-12-11 1998-09-01 Applied Materials, Inc. Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
US6480278B1 (en) 1997-12-16 2002-11-12 Stephen Douglas Fuerstenau Method and apparatus for detection of charge on ions and particles
TW423018B (en) * 1998-06-11 2001-02-21 Axcelis Tech Inc Ion dosage measurement apparatus for an ion beam implanter and method
KR20010010825A (ko) * 1999-07-23 2001-02-15 윤종용 이온주입기의 이온빔 균일도 제어시스템
JP3414337B2 (ja) * 1999-11-12 2003-06-09 日新電機株式会社 電磁界レンズの制御方法およびイオン注入装置
US6409896B2 (en) 1999-12-01 2002-06-25 Applied Materials, Inc. Method and apparatus for semiconductor wafer process monitoring
KR100815635B1 (ko) * 2000-05-15 2008-03-20 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업편에 이온을 주입하기 위한 방법 및 이온 주입 장치
US7547460B2 (en) 2000-09-15 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Ion implanter optimizer scan waveform retention and recovery
EP1336190A2 (de) 2000-11-22 2003-08-20 Varian Semiconductor Equipment Associates Inc. Hybride rastervorrichtung und ionenimplantierungsverfahren
US6710359B2 (en) 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US20020175297A1 (en) * 2001-05-25 2002-11-28 Scheuer Jay T. Methods and apparatus for ion implantation with variable spatial frequency scan lines
FR2826730B1 (fr) * 2001-06-29 2003-09-05 Commissariat Energie Atomique Procede de charge d'une structure comportant un corps isolant
DE10210270A1 (de) * 2002-03-08 2003-10-02 Infineon Technologies Ag Ionen-Implantierungsvorrichtung
KR100444201B1 (ko) * 2002-04-18 2004-08-16 삼성전자주식회사 이온빔 경사각 측정방법 및 장치
DE10329383B4 (de) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors
US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling
JP2006196385A (ja) * 2005-01-17 2006-07-27 Seiko Epson Corp イオン注入装置及び半導体装置の製造方法
JP5015464B2 (ja) * 2006-01-30 2012-08-29 株式会社アルバック イオン注入方法およびイオン注入装置
KR100835487B1 (ko) * 2006-10-18 2008-06-04 동부일렉트로닉스 주식회사 이온주입장치의 인터락 방법
JP4285547B2 (ja) * 2007-01-22 2009-06-24 日新イオン機器株式会社 ビーム電流波形の測定方法および測定装置
JP2008235044A (ja) * 2007-03-22 2008-10-02 Ihi Corp ビームプロファイルモニター
JP5863153B2 (ja) * 2012-10-29 2016-02-16 日新イオン機器株式会社 イオン注入装置
US9111719B1 (en) * 2014-01-30 2015-08-18 Axcelis Technologies, Inc. Method for enhancing beam utilization in a scanned beam ion implanter
JP6195538B2 (ja) * 2014-04-25 2017-09-13 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
GB201413422D0 (en) * 2014-07-29 2014-09-10 Oxford Instr Nanotechnology Tools Ltd A method for measuring the mass thickness of a target sample for electron microscopy
US10222400B2 (en) 2016-09-21 2019-03-05 Nissin Ion Equipment Co., Ltd. Beam current measuring device and charged particle beam irradiation apparatus
CN112635280B (zh) * 2020-12-12 2024-02-23 北京烁科中科信电子装备有限公司 一种离子注入机束流与剂量测控装置及方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126918A (en) * 1980-03-11 1981-10-05 Hitachi Ltd Injecting device for ion
EP0178803A3 (de) * 1984-09-19 1988-07-20 Applied Materials, Inc. Vorrichtungen und Verfahren zur Ionenimplantation von Halbleiterplättchen
ATE227884T1 (de) * 1986-04-09 2002-11-15 Varian Semiconductor Equipment Ionenstrahlabtastverfahren und vorrichtung
JPS62295347A (ja) * 1986-04-09 1987-12-22 イクリプス・イオン・テクノロジ−・インコ−ポレイテツド イオンビ−ム高速平行走査装置
JPS63128540A (ja) * 1986-11-17 1988-06-01 Shimadzu Corp イオン注入装置
US4724324A (en) * 1986-11-24 1988-02-09 Varian Associates, Inc. Method and apparatus for ion beam centroid location
GB2216714B (en) * 1988-03-11 1992-10-14 Ulvac Corp Ion implanter system
JP2660005B2 (ja) * 1988-07-26 1997-10-08 富士通株式会社 半導体基板へのイオン注入装置

Also Published As

Publication number Publication date
JPH0770296B2 (ja) 1995-07-31
KR900019123A (ko) 1990-12-24
US5068539A (en) 1991-11-26
JPH03114127A (ja) 1991-05-15
DE69021435T2 (de) 1996-01-25
EP0398269A2 (de) 1990-11-22
KR930005735B1 (ko) 1993-06-24
EP0398269A3 (de) 1991-05-15
EP0398269B1 (de) 1995-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NISSIN ION EQUIPMENT CO., LTD., KYOTO, JP

8339 Ceased/non-payment of the annual fee