8 A7 B7 五、發明說明（/ ) 〔發明之領域〕 ---------:----裝--------.訂· (請先閱讀背面之注意事項再填寫本頁) 本發明關於一種離子束植入器，特別關於測量及控制 植入一暴露在離子束植入器之離子束的工件之離子劑量之 裝置及方法。 〔發明之背景〕 離子束植入器被廣泛使用於半導體晶圓之摻雜程序中 。一離子束植入器可產生含理想種類之正電荷離子之離子 束。離子束撞撃半導體晶圓工件之暴露表面，因而“摻雜” 或植入理想之離子進入工件表面。某些離子束植入器利用 連續植入於一植入室中之支座上之單一半導體工件。支座 之方向可使工件位於離子束線中，離子束並且反復掃描工 件以植入理想劑量之離子。當植入完成，工件自支座被移 開，另一工件被置於支座上。 另一型式之離子植入器利用一旋轉、轉移碟形支座， 工件即位於碟形支座上。複數個半導體工件安裝在碟形支 座上。支座被支撐於一終端之植入室，或離子束植入器之 植入站。支座之旋轉及轉移可使複數個工件各者可於生產^ 運轉期間暴露在離子束中。 經濟部智慧財產局員工消費合作社印製 能收集離子束之離子並可阻止電子自籠中逃出，及排 除可能伴隨離子束之電子之法拉第籠(Faraday cage)被廣泛 應用於測量離子束電流，因而可便於植入劑暈之控制。但 ，離子束中之中性原子無法由法拉第籠偵出。如離子束產 生足夠之離子束中性化，法拉第籠離子束電流讀數將爲工 件所接受之實際離子値入之錯誤測量。 5 本纸張尺度遶用中國國家標準（CNS)A4規格（210x 297公釐） 經濟部智慧財產局員工消費合作杜印製 4 2 3 CM 8 μ _______B7___ 五、發明說明（>) 在植入程序期間，半導體晶圓工件中之離子植入量之 準確性非常重要。在半導體裝置製造.中，均一性及總植入 劑量之可接受容差於目前許多應用中爲1%位準或更少。以 此等低容差位準，必須考慮沿離子束路徑之離子中性化。 離子中性化係由充電離子與剩餘原子之相撞，及離子束植 入器內沿離子束路徑或束線之內部區域存在之電子所引起 。此種中性化之離子與充電之離子具有相同之能量，以植 入劑量而言與其相等。 離子束植入器內部區域之剩餘原子，特別是內部區域 之剩餘氣體原子係至少三種不同來源引起。第一，氣體植 入內部區域與離子束中性化器或電子簇射有關。離子束中 性化器配置在離子束線並將離子束之正電荷離子在植入前 加以中性化。如離子上之正電荷在植入晶圓前未予中性化 ，摻雜之晶圓蔣展現淨正電荷。此轉在晶圓工件上之淨正 電荷有不良之特性。一中性化之氣體被注入離子束電子簇 射中，離子束離子與注入之中性化氣體之碰撞導致離子束 '線中之中性化離子。在某些離子束植入器中，與離子束中 性化器有關之中性化氣體造成離子束植入器內部區域之大 量剩餘氣體。典型中性化氣體包括氙(Xe)及氬(Ar)。 在離子束植入器內部區域之第二大量剩餘氣體之原因 爲，自半導體晶圓工件上光阻材料塗層之排氣。在某些離 子植入器中’光阻材料排氣爲大量剩餘氣體之原因。當離 子束撞擊工件表面上，光阻材料被揮發或排除。光阻排氣 中主要由光.阻材料捕捉之氫氣(H2)、不同之碳氫化合物、 ^----:1' ί 裝----------- —、訂- {諳先閱讀背面之注急事項再填寫本頁) X 297公釐〉 經濟部智慧財產局員工消費合作社印製 r 4 2 3 ο 1 8 ,! 較叫二。 Α7 ___Β7___ 五、發明說明（巧） 及少量之大氣氮氣(Ν2)。 在離子束內部區域之剩餘氣體之較小源爲來自離子源 之等離子（電漿)室逸出之源氣體。源氣體係注入等離子室 及在其中離子化。離子自等離子室之蓋中之小孔或弧形隙 縫逸出，並沿離子束線被加速。經弧形隙縫逸出之源氣體 之少量，並說明了離子束內部區域剩餘氣體之一部份。源 氣體之典型例包括碑化氫(AsH3)、蒸氣化銻(沾）、磷化氫 (H3P)、乙硼酸(B2H6)、三氯化硼(BF3)、蒸氣化鎵(〇a)、蒸 氣化氤(In)、氨(NH3)、氫(H2)及氮(N2)。 當植入器之內部區域沿離子束線之壓力夠低時，植入 種類主要爲由離子束植入器之分析磁鐵選擇之單充電正離 子。分析磁鐵位於離子束線，且造成離子束向植入室彎曲 。分析磁鐵之磁場強度及方向事先設定，俾僅具有適當原 子量之離子種類被以適當之曲度偏轉，以跟隨理想之離子 束線路徑至植入室。但如離子束植入器沿離子束線之壓力 不夠低，離子束之:\量比例之充電離子將經由與剩餘氣，體 原子之原子互撞而改變其電荷狀態，但在能量上並無顯著 之己夂變。在此情況下，撞擊法拉第籠之離子束將包含一部 份中性化原子。此等中性化之原子爲理想種類，並具有供 植入之理想能量，因此，此種中性化原子在離子束之總通 ' 量中應予計算。但法拉第籠無法計算此種中性化原子。 美國專利號碼4,539,217於1985年9月3日頒給 Farley,其中揭示一方法及一裝置以補償在植入程序中離子 束之中性化。Farley專利係讓渡給本發明申請案之受讓人 7 本紙張尺度洎用令國國家標準（CNS)A4規格（2]〇χ 297公爱） (請先閱讀背面之注意事項再填寫本頁) 裝 · 4 2 3 0 18， A7 B7 五、發明說明（) ，並以參考方式充份倂入本文。Farley專利利用—項事實 ，即離子束中性化之量爲離子束植入器沿離子束束線之內 部區域中氣體壓力之函數。此外，根據Farley專利’有效 離子束電流it含兩種成份’離子束離子化單一正電荷電流 1+及離子束中性化電流ίο °有效離子束電流1τ爲工件之植 入中之電流效率量度，而不論植入之顆粒之電荷爲何。因 此，離子化離子束電流1+及離子束中性化電流10 ’均被考 慮爲一特殊工件所接受之離子劑量之決定因素。Farley專 利假定，由法拉第籠所測量之電流If僅含離子化單一正電 荷電流1+。 真實或有效離子束電流IT之第二種成份’即中性化電 流10，未被法拉第籠測量。含中性化電流10之原子與含 離子化正電荷電流1+在植入半導體晶圓工件均爲有效。此 外，植入器內部區域之氣體壓力越大，中性化電流10亦越 大，因爲，離子及氣體原子之更多碰撞，離子化正電荷電 流1+則更小。Farley專利假定在植入程序中所受之壓力範 圍內，由法拉第籠所測量之敝子束電流.If爲離子植入器內 部區域之壓力P之線性函數。 經濟部智慧財產局員工消費合作杜印製 ίι — —— — — — — —， ·国 I I 丁· (請先閲讀背面之注意事項再填寫本頁)8 A7 B7 V. Description of Invention (/) [Field of Invention] ---------: ---- Equipment --------. Order · (Please read the precautions on the back before (Fill in this page) The present invention relates to an ion beam implanter, and more particularly, to an apparatus and method for measuring and controlling the ion dose of a workpiece implanted with an ion beam exposed to the ion beam implanter. [Background of the Invention] Ion beam implanters are widely used in the doping process of semiconductor wafers. An ion beam implanter produces an ion beam containing a desired type of positively charged ions. The ion beam hits the exposed surface of the semiconductor wafer workpiece, thereby "doping" or implanting ideal ions into the workpiece surface. Some ion beam implanters utilize a single semiconductor workpiece that is continuously implanted on a support in an implantation chamber. The orientation of the support allows the workpiece to be positioned in the ion beam line, and the beam is scanned repeatedly to implant the desired dose of ions. When the implantation is complete, the workpiece is removed from the support and another workpiece is placed on the support. Another type of ion implanter utilizes a rotating and transfer disc support, and the workpiece is located on the disc support. A plurality of semiconductor workpieces are mounted on a dish support. The support is supported in a terminal implantation chamber or an implantation station of an ion beam implanter. The rotation and transfer of the support allows each of the plurality of workpieces to be exposed to the ion beam during production ^ operation. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a Faraday cage that collects ions of the ion beam and prevents electrons from escaping from the cage, and excludes electrons that may accompany the ion beam. Therefore, the control of implant halo can be facilitated. However, neutral atoms in the ion beam cannot be detected by the Faraday cage. If the ion beam produces sufficient ion beam neutralization, the Faraday cage ion beam current reading will be an erroneous measurement of the actual ion penetration accepted by the workpiece. 5 This paper scale uses the Chinese National Standard (CNS) A4 specification (210x 297 mm). Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by employees. 2 2 CM 8 μ _______B7___ 5. Description of the invention (>) During the procedure, the accuracy of the amount of ion implantation in the semiconductor wafer workpiece is very important. In semiconductor device manufacturing, uniformity and acceptable tolerances for total implant dose are 1% or less in many applications today. With these low tolerance levels, ion neutralization along the beam path must be considered. Ion neutralization is caused by the collision of charged ions with the remaining atoms and the presence of electrons in the ion beam implanter along the ion beam path or the internal region of the beam line. This neutralized ion has the same energy as the charged ion and is equivalent to the implanted dose. The remaining atoms in the internal region of the ion beam implanter, especially the remaining gas atoms in the internal region, are caused by at least three different sources. First, the implantation of gas into the internal area is related to the ion beam neutralizer or electron shower. The ion beam neutralizer is arranged at the ion beam line and neutralizes the positively charged ions of the ion beam before implantation. If the positive charge on the ions is not neutralized before implanting the wafer, the doped wafer Chiang exhibits a net positive charge. The net positive charge transferred to the wafer workpiece has a poor characteristic. A neutralized gas is injected into the electron beam of the ion beam. The collision between the ion beam ions and the injected neutralized gas causes the neutralized ions in the ion beam 'line. In some ion beam implanters, the neutralizing gas associated with the ion beam neutralizer causes a large amount of residual gas in the internal region of the ion beam implanter. Typical neutralizing gases include xenon (Xe) and argon (Ar). The reason for the second large amount of remaining gas in the internal region of the ion beam implanter is the exhaust of the photoresist material coating from the semiconductor wafer workpiece. The venting of the 'resistive material' in some ion implanters is responsible for the large amount of residual gas. When the ion beam hits the surface of the workpiece, the photoresist material is volatilized or eliminated. In the photoresist exhaust, the hydrogen (H2) captured by the photoresist material, different hydrocarbons, ^ ----: 1 'ί -----------, order-{谙 Read the urgent notes on the back before filling out this page) X 297 mm> Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy r 4 2 3 ο 1 8,! Α7 ___ Β7 ___ 5. Description of the invention (ingenious) and a small amount of atmospheric nitrogen (N2). The smaller source of the remaining gas in the internal region of the ion beam is the source gas escaping from the plasma (plasma) chamber of the ion source. The source gas system is injected into the plasma chamber and ionized therein. Ions escape from small holes or arc gaps in the lid of the plasma chamber and are accelerated along the ion beam line. The small amount of source gas escaping through the arc-shaped gap and illustrates a part of the remaining gas in the internal region of the ion beam. Typical examples of the source gas include stele hydrogen (AsH3), vaporized antimony (dip), phosphine (H3P), diboronic acid (B2H6), boron trichloride (BF3), gallium vapor (〇a), vapor Thorium (In), ammonia (NH3), hydrogen (H2), and nitrogen (N2). When the pressure in the internal region of the implanter along the ion beam line is low enough, the implantation type is mainly a single-charge positive ion selected by the analysis magnet of the ion beam implanter. The analysis magnet is located at the ion beam line and causes the ion beam to bend toward the implantation chamber. The magnetic field strength and direction of the analysis magnet are set in advance. Only the ion species with the proper atomic amount are deflected with the proper curvature to follow the ideal ion beam line path to the implantation room. However, if the pressure of the ion beam implanter along the ion beam line is not low enough, the charge ratio of the ion beam: \ amount ratio will change its charge state by colliding with the remaining gas and body atom atoms, but there is no energy Significant change. In this case, the ion beam impacting the Faraday cage will contain a portion of the neutralized atoms. These neutralized atoms are the ideal species and have the ideal energy for implantation. Therefore, such neutralized atoms should be calculated in the total flux of the ion beam. Faraday cages cannot calculate such neutralized atoms. U.S. Patent No. 4,539,217, issued to Farley on September 3, 1985, discloses a method and a device to compensate for ion beam neutralization during implantation procedures. The Farley patent is assigned to the assignee of the application for this invention. 7 Paper Size Use Order National Standard (CNS) A4 Specification (2) 〇χ 297 public love) (Please read the precautions on the back before filling this page ) Install · 4 2 3 0 18, A7 B7 V. Description of the invention (), and fully incorporated herein by reference. The Farley patent makes use of the fact that the amount of ionization neutralization is a function of the pressure of the gas in the internal region of the ion beam implanter along the ion beam line. In addition, according to Farley's patent, 'Effective ion beam current it contains two components' Ion beam ionization single positive charge current 1+ and ion beam neutralization current ο ° Effective ion beam current 1τ is a measure of the current efficiency in implantation of a workpiece Regardless of the charge of the implanted particles. Therefore, both the ionizing ion beam current 1+ and the ion beam neutralizing current 10 'are considered as the determinants of the ion dose received by a particular workpiece. Farley's patent assumes that the current If measured by a Faraday cage contains only a single positive charge current 1+. The second component of the real or effective ion beam current IT, namely the neutralizing current 10, has not been measured by a Faraday cage. Atoms with a neutralization current of 10 and currents with an ionized positive charge of 1+ are effective in implanting semiconductor wafer workpieces. In addition, the greater the gas pressure in the internal region of the implant, the greater the neutralization current 10, because the more collisions of ions and gas atoms, the smaller the ionized positive charge current 1+. The Farley patent assumes that the radon beam current measured by the Faraday cage within the range of pressure experienced during the implantation procedure. If is a linear function of the pressure P in the internal region of the ion implanter. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs on the consumer cooperation of Du I —— — — — — — —, · Country I I Ding (Please read the precautions on the back before filling this page)
Farley專利揭示之方法可補償有效離子束電流IT及離 子化束電流1+間之不同。在離子植人器之內部區域、離子化 正電荷電流1+及壓力P之測量係用於一離子劑量控制系統 ，以產生校正信號以補償在植入器內部區域壓力變化時由 法拉第籠所偵出之離子變化。一特別生產運轉之校正信號 係取決於選出之校正因素或“K”値。 8 本紙張尺度適用中國國家標準（CNS)A.l規格（21ΰ X 297公H ) L423018 經濟部智慧財產局員工消費合作社印製 Λ7 B7 五、發明說明（f )The method disclosed by the Farley patent can compensate for the difference between the effective ion beam current IT and the ion beam current 1+. In the internal area of the ion implanter, the measurement of the ionized positive charge current 1+ and the pressure P are used in an ion dose control system to generate a correction signal to compensate for the pressure change detected by the Faraday cage in the internal area of the implant. The ion changes. The correction signal for a particular production run depends on the selected correction factor or "K" 値. 8 This paper size applies to China National Standard (CNS) A.l specifications (21ΰ X 297 male H) L423018 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy Λ7 B7 V. Description of the invention (f)
Farley專利之控制離子劑量之方法，包括下列步驟： 1) 利用法拉第籠測量入射在晶圓工件上之離子化束電 流1+ ; 2) 測量在植入室中之氣體壓力P ; 3) 利用一關係轉換離子化束電流1+及壓力量度P爲真 實或有效離子束電流IT，及 4) 改變植入之劑量作爲有效束電流IT之函數。 真實或有效離子束電流IT於是輸入至一微處理器爲基 準之植入器劑量控制系統，供根據已知方法監視及控制植 入劑量。 根據Faeley專利·，一用來轉換離子化離子束電流1+爲 有效離子束電流IT之線性恆等式爲； IT=I+[1+KP] 在Farley專利中公布二植入作業模式。在第一或固定 模式中，一組K値予以預估供離子束參數與晶圓工件參數 不同組合之用。該組K値存儲在微處理器記憶體中，及當 離子束與工件特性輸入微處理器時，自記憶體中摘取之一 適當K値。在作業之第二或動態模式中，選擇一開始K値 ，此K値在工件支座充份旋轉之後，加以修改。在工件支 座之每一旋轉時，離子ί匕束電流1+及壓力P加以測量，加 以計算Κ値亦稱Kj(Kj爲支座之第j次旋轉之Κ値）。三個 .最近Kj(Kj，Kj-l，Kj-2)之移動平均値加以找出，移動平均値 亦稱K_jA且用來計算第j次支座旋轉之新有效束電流，稱 g IjT。 9 ------：----:! !裝--------訂 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準規格（210 X 297公釐） i 4 2 3 0 1 8 ^ A7 __ B7 五、發明說明（&) 1 - I I t n I- ^ ^ I I 1 ^ I > I I (請先閱讀背面之注意事項再填寫本頁) 在任一作業模式中’必須提供κ之原始値給劑量控制 系統。因爲K値係由經驗估計而得以供不同之源氣體/工件 材料組合之用，一測試植入矩陣必須產生以供每一氣體源 及每一半導體晶圓材料之用。此外，在測試以憑經驗決定 κ値時利用實際半導體晶圓。 此測試引起多數晶圓之不當植入。此種半導體晶圓具 有每一晶圓之可觀成本，且不當晶圓植入會導致大幅斷片 損失。此外，在測試運轉期間以求發現不同離1子束參數及 晶圓工件參數之可接受K値時，可貴之生產時間係大幅浪 費。 吾人所需者爲離子植入器之有效離子束劑量控制裝置 。吾人亦需一裝置及程序以有效決定最佳或接近最佳之κ 値，該値可用以控制加在工件上之離子束劑量。同時亦需 要一裝置及程序以決定最佳κ値而不需使用實際半導體晶 圓。 [發明之槪述] 經濟部智慧財產局員工消費合作社印製 根據本發明，揭示一離子束植入器供將一離子束導向 一或多個半導體工件。離子植入器包括限定一植入室之植 入站。一或多個工件支撐在位於植入室之支座上。離子植 入器尙包括一離子源以產生一離子束，及束形成及導向裝 置限定一內部區域，離子束經由該區自離子源至植入站。 一壓力調整系統供將內部區域加壓及減壓之用。 植入器尙包括一新穎之劑量控制裝置，以控制植入’一 工件之離子劑量。劑量控制裝置包括壓力測量裝置以測量 10 本紙張尺度適用中國國家標準（CNS)A.l規格（210 X 297公釐） 4230 1 8 A7 __B7__ 五、發明說明（7) 植入室之壓力，及一離子束電流測量裝置以測量植入室中 離子束之離子化電流。劑量控制裝置尙包括有一孔隙之限 定板。限定板可在生產運轉位置及校正運轉位置間移動。 在生產運轉位置時限定板自離子束之束線離開。在校正運 轉位置時，限定板位於束線中俾離子束之一部份與限定板 孔隙成橫向，並在植入室中導向工件。 在校正運轉位置時，限定板將束形成及導向裝置密封 ，以將內部區域分爲包括植入室之第一區域，及包括離子 源之第二區域。壓力調整系統啓動後，第一區，域加壓至第 一壓力，第二區域則具有第二壓力。 劑量控制裝置尙包括劑量控制電路，係耦合至壓力調 整系統、壓力測量裝置及離子束電流測量裝置。劑量控制 電路在校正運轉期間操作，以計算與離子化束電流相關之 校正値(“κ”値)爲有效離子束電流，以供特別測試氣體之用 ，該氣體在生產運轉期間模擬一預期之剩餘氣體。 經濟部智慧財產局員工消費合作杜印製 — — I1IIIIII1. I I · I I I I I I I · 丁· 言 (請先閲讀背面之注意事項再填寫本頁) 離子植入器劑量控制電路，利用一選擇之氣體(或氣體 混合氣)以改變複數個壓力値間之第一壓力以計算校正値’ 以爲每一壓力値決定對應離子化束電流値(即法拉第籠電流 )。利用曲線擬合資料分析軟體，劑量控制電路#定測量壓 力對法拉第籠離子束電流之資料點之一函數’並決定測試 氣體之K因素。選擇之測試氣體應複製剩餘氣體之一或多 個成份，其預期在生產運-期間出現在離子植入器內部區 域。 劑量控制電路在生產運轉期間操作，以控制複數個工 一 —_ 11 本紙張尺度適用中國國家標準<CNS)A4規格（21〇 x 297公釐）The Farley patented method for controlling ion doses includes the following steps: 1) measuring the ionized beam current 1+ incident on the wafer workpiece using a Faraday cage; 2) measuring the gas pressure P in the implantation chamber; 3) using a The relationship converts the ionized beam current 1+ and the pressure measure P to the real or effective ion beam current IT, and 4) changes the implanted dose as a function of the effective beam current IT. The real or effective ion beam current IT is then input to a microprocessor-based implant dose control system for monitoring and controlling the implant dose according to known methods. According to the Faeley patent, a linear identity for converting the ionized ion beam current 1+ to the effective ion beam current IT is: IT = I + [1 + KP] The two implantation operation modes are announced in the Farley patent. In the first or fixed mode, a set of K 値 is estimated for different combinations of ion beam parameters and wafer workpiece parameters. This group of K 値 is stored in the microprocessor memory, and when the ion beam and workpiece characteristics are input into the microprocessor, one of the appropriate K 値 is extracted from the memory. In the second or dynamic mode of the job, select the start K 値. This K 値 is modified after the workpiece support is fully rotated. At each rotation of the workpiece support, the ion beam current 1+ and the pressure P are measured and added to calculate κ 値, which is also called Kj (Kj is the KK of the jth rotation of the support). Three. The latest moving average 値 of Kj (Kj, Kj-1, Kj-2) is found. The moving average 値 is also called K_jA and is used to calculate the new effective beam current of the j-th rotation of the support, which is called g IjT. 9 ------: ---- :!! Loading -------- Order (please read the precautions on the back before filling this page) This paper size applies to Chinese national standard specifications (210 X 297 (Mm) i 4 2 3 0 1 8 ^ A7 __ B7 V. & Description 1-II tn I- ^ ^ II 1 ^ I > II (Please read the notes on the back before filling this page) In either mode of operation 'primary kappa' must be provided to the dose control system. Because K 値 is empirically estimated and can be used for different source gas / workpiece material combinations, a test implant matrix must be generated for each gas source and each semiconductor wafer material. In addition, actual semiconductor wafers are used when testing to determine κ 値 empirically. This test caused improper implantation of most wafers. Such semiconductor wafers have a considerable cost per wafer, and improper wafer implantation can result in significant fragmentation losses. In addition, during the test operation to find acceptable K 値 for different beamlet parameters and wafer workpiece parameters, the valuable production time is a huge waste. What I need is an effective ion beam dose control device for ion implanters. We also need a device and procedure to effectively determine the optimal or near optimal κ 値, which can be used to control the ion beam dose applied to the workpiece. It also requires a device and procedure to determine the optimal kappa without using actual semiconductor wafers. [Description of Invention] Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs According to the present invention, an ion beam implanter is disclosed for directing an ion beam to one or more semiconductor workpieces. The ion implanter includes an implantation station defining an implantation chamber. One or more workpieces are supported on a support located in the implantation chamber. The ion implanter 尙 includes an ion source to generate an ion beam, and the beam forming and guiding device defines an internal region through which the ion beam passes from the ion source to the implantation station. A pressure adjustment system is used to pressurize and decompress the internal area. The implanter 尙 includes a novel dose control device to control the dose of ions implanted into a workpiece. The dose control device includes a pressure measuring device to measure 10 paper sizes that are applicable to Chinese National Standard (CNS) Al specifications (210 X 297 mm) 4230 1 8 A7 __B7__ V. Description of the invention (7) The pressure of the implantation chamber, and an ion A beam current measuring device measures an ionization current of an ion beam in an implantation chamber. The dose control device 尙 includes a limiting plate having an aperture. The limit plate can be moved between the production operation position and the correction operation position. The plate is restricted from leaving the beamline of the ion beam in the production running position. When correcting the operation position, the limiting plate is located in the beam line, and a part of the erbium ion beam is transverse to the limiting plate aperture, and guides the workpiece in the implantation room. In correcting the operating position, the limiting plate seals the beam forming and guiding device to divide the internal area into a first area including the implantation chamber and a second area including the ion source. After the pressure adjustment system is activated, the first zone, the domain is pressurized to the first pressure, and the second zone has the second pressure. The dose control device includes a dose control circuit coupled to a pressure adjustment system, a pressure measurement device, and an ion beam current measurement device. The dose control circuit operates during the calibration operation to calculate the correction 値 ("κ" 値) related to the ion beam current as the effective ion beam current for the special test gas that simulates an expected one during the production operation Residual gas. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs on consumer cooperation—I1IIIIII1. II · IIIIIII · Ding · Yan (Please read the precautions on the back before filling this page) Ion implanter dose control circuit, using a selected gas (or Gas mixture) to change the first pressure between a plurality of pressures to calculate the correction 値 'to determine the corresponding ionizing beam current 每一 (that is, the Faraday cage current) for each pressure. Using the curve fitting data analysis software, the dose control circuit # determines a function of the data point of the measured pressure versus the Faraday cage ion beam current ’and determines the K factor of the test gas. The test gas selected should replicate one or more of the remaining gases, which are expected to appear in the internal area of the ion implanter during the production run. The dose control circuit operates during production operation to control multiple jobs. — — 11 This paper size applies to the Chinese National Standard < CNS) A4 specification (21〇 x 297 mm)
Γ 4230 1 B A7 B7 五、發明說明（y) 件各者接收之離子劑量，及利用一或多個預定之校正値、 測量之値入室壓力及測量之離子化電流以計算有效離子束 電流。如利用一個以上之K値以計算有效離子束電流，關 於植入器內部區域中總壓力之比例必須以對應一K値之每 一氣體成份計算時，必須以近似値計算。 本發明之此等及其他特性及優點將可自以下之較佳實 施例之詳細敘述及伴隨之圖式而更爲了解。 〔圖式簡略敘述〕 圖、1爲本發明離子束植入器之頂部平面圖； 圖2爲圖1中離子束植入器之選擇組件之透視圖； 圖3A爲自圖1之3A-3A所指之線之平面觀看時離子 束劑量測量及校正總成之剖面圖； 圖3B爲離子束劑量測量及校正總成之另一剖面圖； 圖4爲一曲線圖，顯示圖1中之離子束植入器之植入 室中之壓力作爲時間之函數； 圖5爲一曲線圖，顯示離子化離子束電流與有效束電 流之比値I+/IT作爲植入室壓力P之函數；及 經濟部智慧財產局員工消費合作社印製 -----^----^! !裝--------訂· (諳先閲讀背面之注意事項再填寫本頁) 圖6爲一曲線圖，顯示氙測試氣體時，離子化離子束 電流1+作爲植入站壓力P之函數。 〔詳細敘述〕 離子束植入器10之結構 圖1顯示一離子束植入器10。此植入器10包括一離 子源12裝在一“L”型支座.13以提供來自離子源14之離子 ，其與至植入或終端站16之束路徑成橫向。控制電子組件 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4230 1 8 A7 ____B7_ 五、發明說明（1 ) (請先閱讀背面之注意事項再填寫本頁) (以20代表)供監視及控制由在植入站16之植入區域或室 22之複數個半導體晶圓工件21(圖2)接收之離子劑量。作 業員輸入至控制電子組件20係經由用戶工作台67執行。 離子源外殼12產生離子束14，其撞擊配置在植入室 22中一旋轉及轉移碟型支座90上之晶圓工件21。儘管旋 轉轉移支座24已揭示，吾人應了解本發明亦可應用於“串 歹U”離子束植入器，即，其中之離子束被導向掃描在靜止工 件之表面。離子束14中之離子在離子源12與植入站16間 之距離橫過時，有發散之趨勢。離子源12包括一等離子室 28限定一內部區，源材料即注入該區。源材料包括離子化 氣體或蒸氣化源材料。固態之源材料沉積在蒸氣化器中， 於是再注入等離子室28中。如希望η型雜質晶圓材料，可 用硼(Β)、鎵(Ga)、或銦(In)。鎵與銦爲固態源材料，硼則注 入等離子室28作爲一氣體，特別是三氟化硼(BF3)'、或氫 化硼(B2H6)，因爲硼蒸氣壓力太低而_法以加熱固體硼而 獲得有用壓力。 經濟部智慧財產局員工消費合作社印製 如欲生產P型雜質材料，適當之源材料包括源氣體氫 化碑(AsH3)、磷化氫(H3P)及銻(Sb)。能量加在源材料上以 在等離子室中產生正電荷離子。圖2可看出，正電荷離子 經由蓋板30中之橢圓弧條29逸出等離子室，蓋板30位於 等離子室28之開口側之上。 在生產運轉期間，當半導體工件21被一離子束14所 撞擊，因而有離子植入，離子束14自離子源12經一抽真 空之路徑行進至亦爲抽真空之植入室22。離子束路徑之抽 13 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 42301 at B7 五、發明說明（/ϋ) 真空由含一對真空幫浦31之壓力調整系統55提供。依照 本發明構造之離子源12之另一應用爲低能量植入器。此種 型式植入器之離子束14在其離子束路徑中有擴散之趨勢， 因此，植入器10之設計自離子源12至植入室22有一相當 短之路徑。 等離子束28中之離子經由等離子室蓋板30之弧隙29 被摘取，並形成離子束14，該離子束14由束形成及導引 結構50使其在離子源12及植入站16間之距離成爲橫向。 束形成及導引結構50包括質量分析或解析磁鐵32及一組 電極34。等離子室離子被接近該室固定在支座24之質量 分析磁鐵32之一組電極34所加速。此組電極自等離子室 內部摘取離子，並將其加速進入與質量分析磁鐵32之交界 區域。通過磁鐵區域之一離子束路徑由一鋁束導引件36爲 界定。在生產運轉期間，由束形成及導引結構50限定之內 部區域52(圖1)由幫浦31抽真空。 構成離子束14之離子自離子源12移動進入由質量分 析磁鐵32設立之磁場。由分析磁鐵32產生之磁場之強度 及方向，由耦合至一磁鐵連接器40(圖1)之控制電子組件 20所控制，以調整通過磁場線圈之電流。 質量分析磁鐵32僅使具有一適當質量至電荷比値之離 子進入及到達離子植入站16。在等離子室28中之源材料 之離子化產生具有理想原子量之一種正電荷離子。但除理 想種類離子外，離子化程序亦產生非適當原子量之一部份 離子。具有適當原子量以上及以下之離子不適於植入。 ]4 ----------；----裝--------.訂· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） A7 k 4230 1 8 __B7_____— —— 五、發明說明（l () ------ - ------裝--------’訂· (請先閱讀背面之注意事項再填窝本頁) 質量分析磁鐵32產生之磁場使離子束14中之離子以 曲線路徑移動。由控制電子組件20所建立之磁場，可使僅 具有等於理想種類之原子量之離子橫過曲線束路徑’進A 植入站植入室22。 位於分析磁鐵32下游爲一解析板.60(圖1)。解析板60 由玻璃狀石墨組成，並限定一長方形孔隙，離子束Η之離 子自該孔隙通過。在解析板60，離子束之擴散(即離子束包 封之寬度)在生產運轉期間可爲最小。 解析板60與質量分析磁鐵32共同作用以消除離子束 14中之不理想種類，該離子種類具智一接近但並不等於理 想離子種類之原子量之離子。如上所解釋，質量分析磁鐵 之磁場所建立之強度及方向由控制電子組件20所控制’俾 僅使具有與理想種類之原子量相等之離子將橫過預定理想' 之束路徑再進入植入站16。具有較理想原子量大很多或小 很多之不理想離子種類均被偏轉，並撞擊束導引件36或由 解析板60限定之隙縫邊界。 經濟部智慧財產局員工消費合作杜印裂 束形成及導引結構50尙包括束中性化器74,通常在本 技藝中稱爲電子簇射器。自等離子室28摘取之離子爲正電 荷。如離子上之正電荷未在植入晶圓之前予以中性化，摻 雜之晶圓將展現淨正電荷。在晶圓工件上之淨正電荷有不 良特性。 束中性化器74之下游端鄰近植入室22，半導體晶圓 工件21即在該室被植入離子。碟形半導體晶圓工件支座 90即被支撐在植入室中。待處理之晶圓工件21被置於晶 15 ^紙張尺度用中國國家標準（CNS)A4規格(210 X 297公釐_) ' * 423〇 1 8 #! A7 B7 五、發明說明（/2 ) 圓支座90之近外緣處，支座以恆定之角速度由一馬達92 旋轉。馬達92之輸出軸由帶96耦合至支座驅動軸94。當 離子束14以圓形路徑旋轉時撞擊晶圓工件。步進馬達98 亦驅動引線螺釘99,以將支座成90度垂直平移(圖2中之箭 頭“A”）。此可使多列半導體晶圚在生產期間被植入。工件 21所接收之離子劑量由控制電子組件20控制下’由支座 90之平移速度決定。植入站20可由撓性紋波管100(圖1) 對束中性化外殼75樞轉。 離子束劑量捽制總成65 離子束植入器10包括一新穎之離子束劑量控制總成 65(圖2)。劑量控制總成65以二模式工作：校正模式及生 產運轉模式。在校正模式，利用校正電路56以獲得校正常 數値，稱爲特定測試氣體之K値。校正電路56可計算不 同測試氣體之不同測試K値，視生產運轉期間所期望剩餘 氣體之成份而定。在生產運轉期間’劑量控制電路66利用 一或多個K値準確控制工件21接收之離子劑量。重要的 是，劑量控制電路66利用校正常數（即K値）以補償在 生產期間植入處理上，離子束植入器內部區域52中離子束 中剩餘氣體之效應。 在校正模式期間所選擇之測試氣體之設計可複製一或 多種剩餘氣體在生產運轉期間出現。當幫浦31在生產運轉 期間抽真空束形成及導引結構內部區域52時，剩餘氣體仍 存在。每一剩餘氣體在生產運轉期間以不同方式撞擊工件 離子植入。視在內部區域之剩餘刺體之量及特性而定，其 16 ----------------裝— <請先閲讀背面之注意事項再填寫本頁) ..訂. 經濟部智慧財產A員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 氬 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（/)) 在植入上之效果可能大或不大。如剩餘氣體之期望量及特 性使其能合理解釋其在生產運轉期間之效果，與該氣體對 應之K値應已被計算並在校正運轉期間存儲在記憶體57 中，該値將被劑量控制電路66利用以在生產運轉期間控制 植入劑量。 劑量控制總成65包括移動限定板70。此限定板70連 接在法拉第旗72之末端，其可由槓桿總成76移動進入及 移出離子束束線。在圖3A及圖3B中，限定板70最好由 玻璃狀石墨製成，及由石墨塗層之金屬製成之法拉第旗72 均不在離子束束線之內。圖2中，限定板70係在束線中。 精於此技藝之人士將了解限定板70之其他結構不連接在法 拉第旗72上亦屬可能。重要的是，限定板70係選擇性進 入及移出束線14。植入器10在校正模式之工作期間移入 束線14時，離子束14經由.限定板70之一開口或縫隙71 被導向或解析，此外τ當限定板在束線14中時，限定 板靠近束形成及導弓」結構50 ’因此形成二個子區域於植入 器內部區域52之內《 ’ 劑量控制總成65亦包括一離子束電流測量裝置，其最 好爲一法拉第籠110及二壓力測量裝置，後者最好爲一離 子計114(圖2)配置在f入室22中。劑量控制總成65尙包 括一對氣體流動幫浦120、122(圖1)，其亦爲壓力調整系統 55之一部份。劑量控制總成65尙包括校正電路56、記憶 體58、壓力補償劑量控制電路66及馬達控制系統68，以 上均係控制電路20.之一部份。 17 -----^----：— ί 裝--------訂. (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度遶用中國國家標準（CNS)A4規格（210 X 297公楚） 4230 1 8 A7 _____；__B7________ 五、發明說明（/p 法拉第籠110係安裝在工件支座90之後，其係用來測 量離子束電流，如其能通過支座90上形成之一隙縫112。 隙縫112亦爲劑重控制總成65之一·部份。法拉第籠僅 測量由半導體晶圓工件21接收之有效離子束電流IT之一 部份。離子束14主要由正離子組成，並具有一入射離子電 流以IT代表。由法拉第籠110測量之離子束電流以If代表 。正離子束14與在內部區域52中沿抽真空之束線剩餘之 氣體原子相撞擊，導致電子之增加或自正離子吸收某些正 離子，其可能性視離子種類、離子速度及與離子通過之氣 體而定。在工件21之植入表面之合成有效離子束電流ΓΓ 具有不同電荷之成份； IT=IO +1- +1十 +1十+ + … 其中：IQ=含中性化粒子I-之離子束電流成份=含單一 充電負離子之離子束電流成份 經濟部智慧財產局員工消費合作杜印製 ----------裝--------*訂· (請先閲讀背面之注意事項再填寫本頁) 1+=含單一充電正離子之離子束電流成份 1++=含雙重充電正離子之離子束電流成份 此等離子束成份各者在工件21之植入上均爲有效，但 並非全體均由法拉第籠110平等測量。法拉第籠離子東電 流If包括所有正離子束電流成份，包括1+，Ι++，Ι+++， 及負離子束電流成份I-。法拉第籠離子束電流If不包括10 .或 I- 〇 生產運轉期間植入器內部區域52內之剩餘氣體之主要 來源爲幫浦進入束中性化器外殼.75之束中性化氣體。此氣 體爲氙與氬氣。束中性化氣體用以作離子束14之充電控制 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） '~ ^ 4 2 3 0 1 8 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（<) 。視植入而定，其他氣體亦可適爲束中性化氣體。植入器 如植入器10係用來以較低束能量以便於生產較高密度半導 體積體電路晶片，束中性化氣體爲在植入期間植入區內部 區域52大部份剩餘氣體出現之原因。 在生產運轉期間，低能量離子植入器如植入器10之內 部區域剩餘氣體之第二大量之原因爲，半導體晶圓工件上 光阻材料塗層之蒸發而產生之氣體。當離子束撞擊工件表 面，光阻材料被蒸發或排氣。 在生產運轉期間，離子束內部區域52中剩餘氣體之較 小源係導自源氣體，其由離子源等離子室28逸出。源氣體 被注入等離子室28並被離子化。一組電極34將自等離子 室蓋子弧隙邛逸出之正電荷離子導向離子束束線。自弧隙 逸出之少量源氣體爲離子束植入器內部區域中之小部份剩 餘氣體之原.因。源氣體之典型例包括氫化砷、磷化氫、蒸 氣化銻、乙硼烷、三氯化硼、蒸氣化鎵及蒸氣化銦。 將於以下解釋，生產期間所期望之剩餘氣體成份根據 以下方式決定；a)已知用於離子束植入程序之中性化氣體 ;b)已知工件21是否以光阻材料塗層；c)已知使用之源氣 體或各氣體。校正係利用測試工件所完成而非以實際半導 體晶圓工件21，以節省以不當植入工件之破裂引起之成本 〇 ' 爲各測試氣體決定一不同K値。所期望之剩餘氣體成 份予以估計，並爲剩餘氣體各者決定各剩餘氣體成份’該 氣體成份之所期望量及特性是否在生產期間構成足夠重要 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 297公釐） U5T. (請先閲讀背面之注意事項再填寫本頁) ί τ ί 4 2 3 0 18， A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（) 補償之理由。即各剩氣體成份必須決定其在工件21之植入 劑量上有足夠影響，因此，最好能包括氣體成份於劑量控 制電路66所執行之補償程序中。一旦校正電路56已計算 所期望重要氣體成份之K値，該値I存儲於記憶體58中 ，並由劑量控制電路66予以利用以決定有效離子束電流 1丁。由劑量控制電路66根據植入室22之測量壓力P及法 拉第籠離子電流If計算之有效離子束電流ΓΓ，由劑量控制 I 電路66予以利用以準確控制複數個半導體晶圓工件21接 收之離子束劑量。吾人麻了解校正運轉並非每一生產運轉 所需要，只要所期望重要剩餘氣體之適當K値事先已由校 正電路56存儲在記憶體58中。植入站22之壓力P ’由位 於植入室22中之離子化計114所測量。第一氣體流控制器 120(圖1)與束中性化器外殼80及植入室22所限定之內部 區域成流體相通。在校正電路56之控制下第一氣體控制器 120在校正模式作業期間，將測試氣體之壓力導入植入室 22並予變化，此點稍後予以說明。第二氣體流控制器122 與一內部區域成流體相通，該區域由束形成結構5〇自離子 源12延伸並通過劑量校正總成外殼80而限定。在校正電 路56操作控制下’第二氣體控制器122自可移動限定板70 沿束線上游導入測試氣體之恆定壓力’以供校正目的。 亦附著在槓桿總成76爲法拉第旗72 ’並連接在限定 板70上(圖3A及圖3B)。槓桿總成76之槓桿78延伸至解 析外殼80之外°槓桿78可在與解析外殼80相關之三個位 置之間旋轉。槓桿76之第一位置中’限定板7〇及法拉第 20 ---------111 ! I ^ · 11 (請先閱讀背面之沒意事項再填寫私頁) 訂· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印裳 L 4 2 3 0 1 8 A7 B7 五、發明說明（/j) 旗72不在離子束14之束線中。此乃在生產運轉期間槓桿 78之位置，如圖3A及3B所示。 在槓桿78之第二或中間位置中，.可移動限定板70位 於與離子束丨4之束線交叉之處。如圖2所示。僅有離子束 14之一小部份離子被允許通過限定板7〇之小型矩型孔隙 71。在較佳實施例中’孔隙之尺寸爲4.0公分(cm)xl.〇公釐 (mm)。吾人了解除矩型外其他形狀之孔隙亦屬有益。包含 複數個小洞貫穿限定板7〇之一孔隙區域在某種情況下可能 更爲有益。 重要的是，限定板70將銜接解析外殼80及束中性化 器外殼75之筒狀構件69密封。如圖3所示’限定板70將 筒狀構件69之開口 69a堵住。由於限定板孔隙71之尺寸 甚小，.限定板70將筒狀構件69在校正模式時密封，由束 形成及導引結構50限定之內部區域被分成二區域’在內部 區域52之上游區域與內部區域52之下游間維持一壓力差 。即在校正期間，植入室22(限定板70之下游)在複數個壓 力間改變或步進，而上游區域(限定板71之上游)則維持@ 定壓力。槓桿78之第二位置被選爲生產運轉前之植入器作 業之疼正模式之用。 在槓桿78之第三位置時，法拉第旗72之位置位於與 離子束14交叉處，可在生產運轉前校正期間測量某些離子 束特性，當測量爲滿意’法拉第旗72由槓桿78旋轉至第 一位置而移出束線’俾限定板及法拉第旗72在生產期 間均不在束線內。 21 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） i — — — — — —— — —! — R - I I * 05 (請先閱讀背面之注意事項再填寫本頁) -訂· 423018 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（/f ) 離子束劑量之校正 如圖4所示，植入站壓力在降壓期間以時間爲函數而 變化，一批半導體'晶圓工件21之植入(以砷爲例)均由正光 阻材料所覆蓋。植入站壓力與支撐半導體晶圓21之支座之 徑向掃描對應而振盪。在離子束14之第一次通過橫跨工件 I 21期間，係觀察到因數10之較大壓力變化。 ， 本發明之劑量控制電路考慮到電荷改變相互作用之壓 力依存關係，其造成有效入射離子束電流1τ於植入表面以 分化成許多不同電荷成份。單一離子化正電流1+由法拉第 籠110所測量。在Farley之217專利中揭示之劑量控制方 法僅考慮中性化束電流1〇及單一正電荷束電流〗+’本發 明之劑量控制方法考慮所有分化電流在自壓力效用之補償 中對有效離子束電流IT之影響。 圖5說明由法拉第籠112測量之單一電荷正電流1+與 由離子化計114測量之作爲壓力之函數之總植入電流IT之 比値中之變化。比値IT/I+在增加壓力至10-6至10-4托時 成平方下降，俾在10_4托壓力時，法拉第籠電流讀數（即 單一離子化正電流1+)爲真實電流之80%。托爲壓力單位 ，等於1Π60大氣壓力。 ‘ 如在本技藝中所熟知，當氣體壓力增加，中性化電流 10增加，但離子化正電荷電流1+降低直到已達平衡値爲止 。平衡値主要與離子種類及速度有關。 校正値之決定 欲校正離子束劑量，即計算一或多個校正値（κ値） 22 (請先閱讀背面之注意事項再填寫本頁)Γ 4230 1 B A7 B7 V. Description of the invention (y) The ion dose received by each of the members, and the effective ion beam current is calculated by using one or more predetermined corrections, the measured pressure of the chamber, and the measured ionization current. If more than one K 値 is used to calculate the effective ion beam current, the ratio of the total pressure in the internal region of the implanter must be calculated with each gas component corresponding to a K 値, which must be calculated using an approximate K 値. These and other features and advantages of the present invention will be better understood from the detailed description of the following preferred embodiments and the accompanying drawings. [Brief Description of the Drawings] Fig. 1 is a top plan view of the ion beam implanter of the present invention; Fig. 2 is a perspective view of a selective component of the ion beam implanter of Fig. 1; Fig. 3A is a view from 3A-3A of Fig. 1 A cross-sectional view of the ion beam dose measurement and correction assembly when viewed from the plane of the pointing line; FIG. 3B is another cross-sectional view of the ion beam dose measurement and correction assembly; FIG. 4 is a graph showing the ion beam in FIG. 1 Pressure in the implantation chamber of the implanter as a function of time; Figure 5 is a graph showing the ratio of ionized ion beam current to effective beam current 値 I + / IT as a function of implantation chamber pressure P; and Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperatives -------- ^ ---- ^!! ------------ Order (订 Please read the notes on the back before filling this page) Figure 6 is a curve The figure shows the ionized ion beam current 1+ as a function of the implantation station pressure P when the xenon test gas is used. [Detailed description] Structure of ion beam implanter 10 FIG. 1 shows an ion beam implanter 10. As shown in FIG. The implanter 10 includes an ion source 12 mounted on an "L" support. 13 to provide ions from the ion source 14, which are transverse to the beam path to the implant or end station 16. Control electronic components 12 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 4230 1 8 A7 ____B7_ 5. Description of the invention (1) (Please read the precautions on the back before filling this page) (to 20 represents) for monitoring and controlling the ion dose received by a plurality of semiconductor wafer workpieces 21 (FIG. 2) in the implantation area or chamber 22 of the implantation station 16. The worker's input to the control electronics 20 is performed via the user station 67. The ion source housing 12 generates an ion beam 14 that impinges on a wafer workpiece 21 disposed on a rotating and transferring dish support 90 in the implantation chamber 22. Although the rotation transfer support 24 has been disclosed, we should understand that the present invention can also be applied to "string U" ion beam implanters, in which the ion beam is directed to scan on the surface of a stationary workpiece. The ions in the ion beam 14 tend to diverge when the distance between the ion source 12 and the implantation station 16 crosses. The ion source 12 includes a plasma chamber 28 defining an internal region into which source material is implanted. Source materials include ionized gas or vaporized source materials. The solid source material is deposited in the vaporizer and then injected into the plasma chamber 28. If an n-type impurity wafer material is desired, boron (B), gallium (Ga), or indium (In) can be used. Gallium and indium are solid-state source materials, and boron is injected into the plasma chamber 28 as a gas, especially boron trifluoride (BF3) 'or boron hydride (B2H6), because the boron vapor pressure is too low to heat the solid boron. Gain useful pressure. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. For the production of P-type impurity materials, suitable source materials include source gas hydrogenation monument (AsH3), phosphine (H3P), and antimony (Sb). Energy is applied to the source material to generate positively charged ions in the plasma chamber. It can be seen in FIG. 2 that the positively charged ions escape from the plasma chamber through the elliptical arc strip 29 in the cover plate 30, and the cover plate 30 is located above the open side of the plasma chamber 28. During the production operation, when the semiconductor workpiece 21 is hit by an ion beam 14 and ion implantation occurs, the ion beam 14 travels from the ion source 12 through a vacuum path to the implantation chamber 22 which is also a vacuum. Ion beam path extraction 13 ^ Paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 42301 at B7 V. Description of the invention (/ ϋ) A pressure adjustment system 55 for the vacuum pump 31 is provided. Another application of the ion source 12 constructed in accordance with the present invention is a low energy implanter. The ion beam 14 of this type of implanter has a tendency to diffuse in its ion beam path. Therefore, the implanter 10 is designed to have a relatively short path from the ion source 12 to the implantation chamber 22. The ions in the plasma beam 28 are extracted through the arc gap 29 of the plasma chamber cover plate 30 to form an ion beam 14 formed by a beam forming and guiding structure 50 between the ion source 12 and the implantation station 16 The distance becomes horizontal. The beam forming and guiding structure 50 includes a mass analysis or analysis magnet 32 and a set of electrodes 34. Plasma chamber ions are accelerated by a set of electrodes 34 of a mass analysis magnet 32 fixed to the support 24 near the chamber. This set of electrodes extracts ions from the inside of the plasma chamber and accelerates them into the boundary area with the mass analysis magnet 32. An ion beam path through a magnet region is defined by an aluminum beam guide 36. During the production operation, the inner area 52 (Fig. 1) defined by the beam forming and guiding structure 50 is evacuated by the pump 31. The ions constituting the ion beam 14 move from the ion source 12 into a magnetic field set up by the mass analysis magnet 32. The strength and direction of the magnetic field generated by the analysis magnet 32 is controlled by the control electronics 20 coupled to a magnet connector 40 (Fig. 1) to adjust the current through the magnetic field coil. The mass analysis magnet 32 only allows ions having an appropriate mass to charge ratio 进入 to enter and reach the ion implantation station 16. The ionization of the source material in the plasma chamber 28 produces a positively charged ion having a desired atomic weight. However, in addition to the ideal type of ion, the ionization process also produces a portion of the ion with an inappropriate atomic weight. Ions with an appropriate atomic weight and below are not suitable for implantation. ] 4 ----------; ---- Installation --------. Order · (Please read the precautions on the back before filling out this page) This paper size applies Chinese national standards ( CNS) A4 specification (210 x 297 mm) A7 k 4230 1 8 __B7_____ — —— V. Description of the invention (l () ------------- installation -------- 'Order · (Please read the precautions on the back before filling this page) The magnetic field generated by the mass analysis magnet 32 moves the ions in the ion beam 14 in a curved path. The magnetic field created by the control electronics 20 can only have Ions of the atomic weight equal to the ideal species cross the curved beam path and enter the implantation chamber 22 of the A implantation station. An analysis plate .60 (Figure 1) is located downstream of the analysis magnet 32. The analysis plate 60 is composed of glassy graphite and is limited A rectangular pore through which the ions of the ion beam pass. In the analysis plate 60, the diffusion of the ion beam (that is, the width of the ion beam envelope) can be minimized during the production operation. The analysis plate 60 interacts with the mass analysis magnet 32 In order to eliminate the undesired species in the ion beam 14, the ion species has ions close to but not equal to the atomic weight of the ideal ion species. As above As explained, the strength and direction established by the magnetic field of the mass analysis magnet are controlled by the control electronics 20 'only the ions having the same atomic mass as the ideal species will cross the predetermined ideal' beam path and enter the implantation station 16 again. Undesirable ion species with much larger or smaller atomic masses are deflected and hit the beam guide 36 or the gap boundary defined by the analysis plate 60. The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs, Du Yin, split beam formation and guidance The lead structure 50 结构 includes a beam neutralizer 74, which is generally referred to as an electron shower in the art. The ions extracted from the plasma chamber 28 are positively charged. For example, the positive charges on the ions are not applied before the wafer is implanted. Neutralization, the doped wafer will exhibit a net positive charge. The net positive charge on the wafer workpiece has undesirable characteristics. The downstream end of the beam neutralizer 74 is adjacent to the implantation chamber 22, and the semiconductor wafer workpiece 21 is at The chamber is implanted with ions. The dish-shaped semiconductor wafer workpiece support 90 is supported in the implantation chamber. The wafer workpiece 21 to be processed is placed in the crystal 15 ^ China National Standard (CNS) A4 specification for paper size ( 210 X 297 male % _) '* 423〇1 8 #! A7 B7 V. Description of the invention (/ 2) Near the outer edge of the circular support 90, the support is rotated by a motor 92 at a constant angular speed. The output shaft of the motor 92 is provided by a belt. 96 is coupled to the support drive shaft 94. The ion beam 14 impacts the wafer workpiece as it rotates in a circular path. The stepper motor 98 also drives the lead screw 99 to translate the support vertically at 90 degrees (the arrow in FIG. 2 " A "). This allows multiple rows of semiconductor wafers to be implanted during production. The ion dose received by the workpiece 21 is controlled by the control electronics 20, which is determined by the translation speed of the support 90. The implantation station 20 can be pivoted by the flexible ripple tube 100 (FIG. 1) to the beam neutralizing housing 75. Ion Beam Dose Control Assembly 65 The ion beam implanter 10 includes a novel ion beam dose control assembly 65 (Figure 2). The dose control assembly 65 works in two modes: calibration mode and production operation mode. In the calibration mode, the calibration circuit 56 is used to obtain a calibration value, called K 値 for a specific test gas. The correction circuit 56 may calculate different test K 値 for different test gases, depending on the composition of the remaining gas expected during the production operation. During the production operation, the dose control circuit 66 accurately controls the ion dose received by the workpiece 21 using one or more K's. It is important that the dose control circuit 66 utilizes a correction constant (i.e., K 以) to compensate for the effects of gas remaining in the ion beam in the internal region 52 of the ion beam implanter during the implantation process during production. The design of the test gas selected during the calibration mode can replicate one or more of the remaining gases that occur during the production run. When the pump 31 evacuates the beam formation and guides the internal region 52 of the structure during production operation, the remaining gas is still present. Each residual gas impacts the workpiece in a different way during the production run. Ion implantation. Depending on the amount and characteristics of the remaining spurs in the inner area, its 16 ---------------- equipment-< Please read the precautions on the back before filling this page). Order. Printed by the Intellectual Property A Employee Cooperative of the Ministry of Economic Affairs This paper is printed in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Ar7 printed by the Employee Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs /)) The effect on implantation may be large or small. If the expected amount and characteristics of the remaining gas make it possible to reasonably explain its effect during production and operation, the K 値 corresponding to the gas should have been calculated and stored in the memory 57 during the calibration operation, and the 値 will be dose-controlled. Circuit 66 is utilized to control the implant dose during production operations. The dose control assembly 65 includes a movement limiting plate 70. The limiting plate 70 is connected to the end of the Faraday flag 72 and can be moved into and out of the ion beam line by the lever assembly 76. In FIGS. 3A and 3B, the limiting plate 70 is preferably made of glassy graphite, and the Faraday flag 72 made of graphite-coated metal is not within the ion beam line. In FIG. 2, the limiting plate 70 is tied in the beamline. Those skilled in the art will understand that it is also possible that other structures of the limiting plate 70 are not connected to the Faraday flag 72. It is important that the limiting plate 70 is selectively moved in and out of the beamline 14. When the implanter 10 moves into the beamline 14 during operation in the calibration mode, the ion beam 14 is guided or resolved through one of the openings or slits 71 of the .defining plate 70, and when the limiting plate is in the beamline 14, the limiting plate approaches The "beam forming and guide bow" structure 50 'thus forms two sub-areas within the internal region 52 of the implanter. "' The dose control assembly 65 also includes an ion beam current measuring device, preferably a Faraday cage 110 and two pressures. The measuring device, which is preferably an ion meter 114 (FIG. 2), is arranged in the f-entry chamber 22. The dose control assembly 65 尙 includes a pair of gas flow pumps 120, 122 (FIG. 1), which is also part of the pressure adjustment system 55. The dose control assembly 65 尙 includes a correction circuit 56, a memory 58, a pressure-compensated dose control circuit 66, and a motor control system 68, all of which are part of the control circuit 20. 17 ----- ^ ----: — ί -------- Order. (Please read the notes on the back before filling this page) This paper uses China National Standard (CNS) A4 Specifications (210 X 297 cm) 4230 1 8 A7 _____; __B7________ 5. Description of the Invention (/ p Faraday cage 110 is installed after the workpiece support 90, which is used to measure the ion beam current, if it can pass through the support 90 A gap 112 is formed. The gap 112 is also a part of the weight control assembly 65. The Faraday cage measures only a part of the effective ion beam current IT received by the semiconductor wafer workpiece 21. The ion beam 14 is mainly composed of positive Ion composition and has an incident ion current represented by IT. The ion beam current measured by Faraday cage 110 is represented by If. The positive ion beam 14 collides with the remaining gas atoms along the evacuated beam line in the internal region 52, resulting in The increase of electrons or the absorption of certain positive ions from positive ions depends on the type of ions, the speed of the ions, and the gas passing through the ions. The synthetic effective ion beam current ΓΓ on the implantation surface of the workpiece 21 has components with different charges ; IT = IO + 1- +1 ten +1 ten + + Of which: IQ = Ion beam current component containing neutralized particles I- = Ion beam current component containing single charged negative ion. Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. ------ * Order · (Please read the notes on the back before filling this page) 1 + = Ion beam current component with single charged positive ion 1 ++ = Ion beam current component with double charged positive ion Each of the components of the plasma beam is effective in implanting the workpiece 21, but not all of them are measured equally by the Faraday cage 110. The Faraday cage east current If includes all positive ion beam current components, including 1+, Ι ++, Ι +++, and negative ion beam current component I-. Faraday cage ion beam current If does not include 10. Or I- 〇 The main source of the remaining gas in the internal region 52 of the implanter during production operation is the pump into the beam neutralization Neutralizing beam of .75 beam. This gas is xenon and argon. The beam neutralizing gas is used for charge control of ion beam 14. This paper size is applicable to China National Standard (CNS) A4 (210 X 297). Mm) '~ ^ 4 2 3 0 1 8 A7 B7 Printed by the cooperative V. Description of the invention (<). Depending on the implant, other gases can also be suitable for beam neutralization. Implants such as implant 10 are used to lower the energy of the beam to facilitate production For high-density semiconductor integrated circuit wafers, the beam of neutralizing gas is the cause of most of the remaining gas in the internal region 52 of the implantation area during implantation. During production operation, low-energy ion implanters such as implanter 10 The second largest reason for the remaining gas in the internal area is the gas generated by the evaporation of the photoresist material coating on the semiconductor wafer workpiece. When the ion beam hits the surface of the workpiece, the photoresist material is evaporated or exhausted. During production operation, the smaller source of the remaining gas in the internal region 52 of the ion beam is derived from the source gas, which escapes from the ion source plasma chamber 28. The source gas is injected into the plasma chamber 28 and ionized. A set of electrodes 34 directs positively charged ions that escape from the arc gap of the plasma chamber lid to the ion beam line. The small amount of source gas escaping from the arc gap is responsible for a small portion of the remaining gas in the internal region of the ion beam implanter. Typical examples of the source gas include arsenic hydride, phosphine, vaporized antimony, diborane, boron trichloride, gallium vapor, and indium vapor. It will be explained below that the remaining gas composition expected during production is determined according to the following methods: a) the neutralizing gas known to be used in the ion beam implantation procedure; b) the workpiece 21 is known to be coated with a photoresist material; c ) Known source gas or gases. The calibration is performed using the test workpiece instead of the actual semiconductor wafer workpiece 21 to save the cost caused by the improperly implanted workpiece rupture 〇 'Determine a different K 値 for each test gas. The expected residual gas composition is estimated, and each of them determines the remaining gas composition. 'Whether the desired quantity and characteristics of the gas composition constitutes sufficient importance during the production period. 19 This paper applies the Chinese National Standard (CNS) A4 specification. (210 297 mm) U5T. (Please read the notes on the back before filling this page) ί τ ί 4 2 3 0 18, A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs reason. That is, each residual gas component must determine that it has a sufficient influence on the implanted dose of the workpiece 21, and therefore, it is desirable to include the gas component in the compensation procedure performed by the dose control circuit 66. Once the correction circuit 56 has calculated the K 値 of the desired important gas component, the 値 I is stored in the memory 58 and used by the dose control circuit 66 to determine the effective ion beam current. The effective ion beam current ΓΓ calculated by the dose control circuit 66 according to the measured pressure P of the implantation chamber 22 and the Faraday cage ion current If is used by the dose control I circuit 66 to accurately control the ion beams received by the plurality of semiconductor wafer workpieces 21 dose. We understand that the calibration operation is not required for every production operation, as long as the appropriate K 値 of the expected significant residual gas is stored in the memory 58 by the calibration circuit 56 in advance. The pressure P 'of the implantation station 22 is measured by an ionization meter 114 located in the implantation chamber 22. The first gas flow controller 120 (FIG. 1) is in fluid communication with the interior area defined by the beam neutralizer housing 80 and the implantation chamber 22. The first gas controller 120 under the control of the correction circuit 56 introduces the pressure of the test gas into the implantation chamber 22 and changes it during operation in the correction mode, which will be described later. The second gas flow controller 122 is in fluid communication with an internal region, which is defined by the beam forming structure 50 extending from the ion source 12 and defined by the dose correction assembly housing 80. Under the operation control of the correction circuit 56, 'the second gas controller 122 introduces a constant pressure of the test gas from the movable limiting plate 70 upstream of the beamline' for correction purposes. Also attached to the lever assembly 76 is a Faraday flag 72 'and is connected to the limiting plate 70 (Fig. 3A and Fig. 3B). The lever 78 of the lever assembly 76 extends beyond the analysis case 80. The lever 78 is rotatable between three positions associated with the analysis case 80. In the first position of the lever 76, 'Limit plate 70 and Faraday 20 --------- 111! I ^ · 11 (Please read the unintentional matter on the back before filling in the private page) Order · This paper size applies China National Standard (CNS) A4 Specification (210 X 297 mm) Yin Sang, Consumer Cooperative of Employees of Intellectual Property Bureau, Ministry of Economic Affairs L 4 2 3 0 1 8 A7 B7 V. Description of Invention (/ j) Flag 72 is not in the beam of ion beam 14 In the line. This is the position of the lever 78 during production operation, as shown in Figs. 3A and 3B. In the second or middle position of the lever 78, the movable limiting plate 70 is located at a position crossing the beam line of the ion beam 丨 4. as shown in picture 2. Only a small portion of the ions of the ion beam 14 are allowed to pass through the small rectangular aperture 71 defining the plate 70. In the preferred embodiment, the size of the pores is 4.0 cm (cm) x 1.0 mm (mm). It is also beneficial to remove other shapes of pores outside the rectangular shape. It may be more beneficial to include a plurality of small holes through one of the pore areas of the limiting plate 70. It is important that the limiting plate 70 seals the cylindrical member 69 that connects the analysis case 80 and the beam neutralizer case 75. As shown in Fig. 3 ', the restriction plate 70 blocks the opening 69a of the cylindrical member 69. Because the size of the limiting plate aperture 71 is very small, the limiting plate 70 seals the cylindrical member 69 in the correction mode, and the inner area defined by the beam forming and guiding structure 50 is divided into two areas' on the upstream area of the inner area 52 and A pressure difference is maintained between the inner region 52 and the downstream. That is, during the correction, the implantation chamber 22 (downstream of the limiting plate 70) changes or steps between a plurality of pressures, while the upstream area (upstream of the limiting plate 71) maintains a constant pressure. The second position of the lever 78 is selected as the positive mode of the implant operation before the production operation. In the third position of the lever 78, the position of the Faraday flag 72 is located at the intersection with the ion beam 14. Some ion beam characteristics can be measured during the calibration before production operation. When the measurement is satisfactory, the Faraday flag 72 is rotated from the lever 78 to the first The position where the beamline is removed from one position and the Faraday flag 72 are not in the beamline during production. 21 This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) i — — — — — — — —! — R-II * 05 (Please read the precautions on the back before filling this page) -Order · 423018 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (/ f) The correction of the ion beam dose is shown in Figure 4. The pressure at the implantation station changes as a function of time during the hypotension. The implantation of a batch of semiconductor 'wafer workpieces 21 (taking arsenic as an example) is covered by a positive photoresist material. The pressure of the implantation station oscillates in correspondence with the radial scanning of the support supporting the semiconductor wafer 21. During the first pass of the ion beam 14 across the workpiece I 21, a large pressure change of a factor of 10 was observed. The dose control circuit of the present invention considers the pressure dependence of the charge-changing interaction, which causes an effective incident ion beam current 1τ to be implanted on the surface to differentiate into many different charge components. A single ionized positive current 1+ is measured by a Faraday cage 110. The dose control method disclosed in Farley's 217 patent only considers the neutralized beam current 10 and a single positive charge beam current. Influence of current IT. Figure 5 illustrates the change in the ratio 値 of the single positive charge current 1+ measured by the Faraday cage 112 to the total implanted current IT as a function of pressure measured by the ionizer 114. The ratio 値 IT / I + decreases squarely when the pressure is increased to 10-6 to 10-4 Torr. 俾 At 10_4 Torr pressure, the Faraday cage current reading (ie, a single ionized positive current 1+) is 80% of the true current. Torr is a pressure unit equal to 1Π60 atmospheric pressure. ‘As is well known in the art, as the gas pressure increases, the neutralization current 10 increases, but the ionized positive charge current 1+ decreases until equilibrium 値 has been reached. Equilibrium is mainly related to ion species and speed. Determination of Calibration Radiation To calibrate the ion beam dose, calculate one or more calibration radiation (κ 値) 22 (Please read the notes on the back before filling this page)
本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐） 423018 經濟'部智慧財產局員工消費合作社印製 五、發明說明（0) ’測試植入劑位於晶圓支座90上而非在實際半導體晶圓工 件上。此可節省校正程序期間損壞之半導體晶圓之昂貴成 本。槓桿70移至第二位置，使限定板70在圓筒型構件沾 之開口 69a之上，該構件在解析外殼80與束中性化器外殻 75之間延伸。 第一氣體控制器120將氙測試氣體之相當高壓力注入 植入室22中。爲決定校正値K，植入室22之測試氣體壓 力P升高以允許一系列之測量，其中法拉第籠離子束電流 If以植入室壓力P之函數予以測量° - 第二氣體流控制器122將氙測試氣體之恆定氣體壓力 注入限定板70之內部區上游。限定板70之測試氣體上游 抑制少量高壓氣體自植入室通過限定板孔隙7丨漏出。吾人 了解某些情況下，如在束線區域有足夠排出或漏出，則不 需注入低壓力測試氣體至限定板70上游。漏出之發生係由 離子束撞擊束導板，及源氣體自等離子室逸出等原因。離 子束流通量係由每單位容積之粒子數與其平均速度之乘積 所限定。因爲限定板70之氣體壓力上游在校正程序中保持 恆定，通過限定板孔隙71之離子束通量爲恆定，不隨植入 室22之測試氣體壓力P而變化。 當植入室22之測試氣體壓力在校正電路56之控制下 ，由第一氣體流控制器120所步進時，劑量控制電路66以 系列壓力位準將測量之植入室壓力P及法拉第離子化束電 流If存儲。最好，資料分析軟體57取20個資料點並予以 分析。 ' i 23 (請先閱讀背面之注意事項再填寫本頁) 裝 -.SJ. 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） 經濟部智慧財產局員工消費合作社印製 α23〇 1 8 Α7 _____Β7 五、發明說明（#) 圖6說明氙氣體之校正常數或Κ値之決定，其中’利 用10千電子伏特(KeV)；^線並以硼爲束(三氟化硼(BF3)爲源 氣體注入等離子室28，三氟化硼被解析爲元素硼並進入束 線）。以特殊測試氣體言，法拉第籠110測幽之離子化束電 流If以植入站壓力P爲函數繪出。在生產運轉期間正常壓 力範圍下，下列;T指數恆，等式可提供最適合之資料點之連 續線：This paper size applies to Chinese national standard (CNS> A4 specification (210 X 297 mm) 423018 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (0) 'Test implant is located on wafer support 90 Instead of on the actual semiconductor wafer workpiece. This can save the expensive cost of the semiconductor wafer that is damaged during the calibration procedure. The lever 70 is moved to the second position, so that the limiting plate 70 is above the opening 69a where the cylindrical member is attached. The component extends between the analysis housing 80 and the beam neutralizer housing 75. The first gas controller 120 injects a relatively high pressure of the xenon test gas into the implantation chamber 22. To determine the correction 値 K, the implantation chamber 22 The test gas pressure P is increased to allow a series of measurements, in which the Faraday cage ion beam current If is measured as a function of the implantation chamber pressure P °-the second gas flow controller 122 injects a constant gas pressure of the xenon test gas into the limiting plate Upstream of the inner area of 70. The test gas upstream of the limiting plate 70 inhibits a small amount of high pressure gas from leaking from the implantation chamber through the limiting plate aperture 7 丨 I understand that in some cases, such as in the beamline area, there is sufficient If it leaks or leaks, it is not necessary to inject low-pressure test gas upstream of the limiting plate 70. Leakage occurs due to the impact of the ion beam on the beam guide, and the source gas escapes from the plasma chamber. The flux of the ion beam is per unit volume. The product of the number of particles and its average velocity is limited. Because the gas pressure upstream of the limiting plate 70 remains constant during the calibration procedure, the ion beam flux through the limiting plate aperture 71 is constant and does not follow the test gas pressure P of the implantation chamber 22 When the test gas pressure of the implantation chamber 22 is stepped by the first gas flow controller 120 under the control of the correction circuit 56, the dose control circuit 66 will measure the implantation chamber pressure P and Faraday ion beam current If storage. Best, data analysis software 57 takes 20 data points and analyzes them. 'I 23 (Please read the precautions on the back before filling this page) Pack -.SJ. This paper size applies to China National Standard (CNS) A4 (210x297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs α23〇1 8 A7 _____ Β7 V. Description of the Invention (#) Figure 6 illustrates the school of xenon gas Constant or κ 値, where 'Using 10 kiloelectron volts (KeV); ^ line and boron as the beam (boron trifluoride (BF3) as the source gas injected into the plasma chamber 28, boron trifluoride is resolved into elemental boron And enter the beam line). Using a special test gas, the Faraday cage 110 measures the ionized beam current If if plotted as a function of the implantation station pressure P. Under normal pressure ranges during production and operation, the following; T index constant, etc. Can provide the most suitable continuous line of data points:
If=Ae-(KP) 其中K及A爲資料分析軟體57決定之常數。 由圖6可見，在理論壓力〇.〇托時，外推法拉第籠離 子束電流If等於有效離子束電流IT。此關係爲真，因爲在 Ρ=0·0托時，內部區域無剩餘離子與離子束丨4相撞，因此 ’法拉第籠電流必等於有效離子束電流，IT=If。 校正電路56之曲線擬合資料分析軟體57在法拉第離 子化電流If與植入室壓力P間摘取K相關値，及產生一劑 量測定校正因數’即氙測試氣體之K値。以氙測試氣體而 j 言’由資料分析軟體57決定之佳擬合指數恆等式如下：If = Ae- (KP) where K and A are constants determined by the data analysis software 57. It can be seen from FIG. 6 that at a theoretical pressure of 0.00 Torr, the extrapolated Faraday cage ion beam current If is equal to the effective ion beam current IT. This relationship is true because when P = 0 · 0 Torr, no residual ions collide with the ion beam in the internal region, so the Faraday cage current must be equal to the effective ion beam current, IT = If. The curve-fitting data analysis software 57 of the correction circuit 56 extracts K-related 値 between the Faraday ionization current If and the implantation chamber pressure P, and generates a dose measurement correction factor ', which is K 値 of the xenon test gas. With the xenon test gas, the identity of the best fitting index determined by the data analysis software 57 is as follows:
If=0.0004816e-(1658)(P) 其中：If爲離子化電流(由法拉第籠110測量）； .P爲植入站壓力；及 - K爲校正値，氙氣體爲1658。 在某一壓力範圍內，離子化電流If與植入站壓力p間 關係之線性關係近似値爲可接受之近似値，經驗發現指數 恆等式可導致最佳擬合，即可使實際離子化電流If與指數 ----------^|!_ 裝--------tr. (請先閱讀背面之注意事項再填寫本頁) 24 Α7 經濟部智慧.財產局員工消費合作社印製 Β7 _ 五、發明說明（χ\) 恆等式所預測之値之平方偏差和爲最小。 某些半導體晶圓工件21可能包括光阻塗層。若爲如此 ，必須以不同之測試氣體作另一校正以發現一對應之K値 ，其與半導體工件21上塗層之光阻塗層產生之氣體成份對 應。此等K値隨後由劑量控制電路66之生產運轉中使用 ，以計算有效離子束電流IT。對精於此技藝人士非常明顯 ，K値之計算及運用可延伸至在生產運轉期間植入器內部 所期望存在之所有剩餘氣體成份。當然，應了解必須判斷 剩餘氣體成份是否夠重要，將其包括在劑暈控制電路66之 有效離子束電流IT之計算中。有些剩餘氣體爲所期望剩餘 氣體之一小部份，對植入劑量之影響甚小，因而不必包括 在上述之補償程序中°此外，如下所說明，如劑量控制電 路66所計算之有效離子束電流IT涉及一個以上之K値之 校正時，關於生產運轉期間植入室內部區域52之總壓力P 之比例必須作近似値預估，此係因爲剩餘氣體成份各者對 其存在必須改正之其他剩餘氣體成份。 生產運轉樽式作業 •生產運轉期間，限定板70移出束線14。因此，植入 室22中測量之壓力P存在於離子束植入器內部區域52。 劑量控制電路66監視及控制工件21在生產運轉期間所收 到之離子植入劑量、明確而言，劑量控制電路66監視離子 化電流If及植入站壓力Ρ，利用一或多個計算之校正値(Κ 値)以決定有效離子束電流IT。IT之計算在每一次支座90 旋轉時即予更新，以保證束劑量之準確控制。 25 表紙張尺度適用;國國家標準（CNS)A4規&(2〗0 X 297公髮 1 ' (請先閱讀背面之注意事項再填寫本頁) 423〇 ^ 8 A7 B7 濟 部 智 慧 -財 產 消 費 合 杜 印 製 五、發明說明（^) 在決定有效離子束電流IT之後，劑量控制電路66發 出適當之控制信號至馬達控制系統68 =馬達控制系統68 經馬達92控制工件支座90旋轉之角速度，及經由步進馬 達98以控制支座90之垂直速度，以維持工件21之均勻植 入。劑量控制電路66亦監視植入生產運轉之已過時間，並 在適當時間停止工件21之植入，以依照監視及控制植入劑 量之已知方法準確達到每一工件之所期望或目標劑量。 計算有效離子束電流IT之一般公式如下： IT=Ife-(KlPl)e-(K2P2)....e-(KnPn) 其中：IT爲有效離子束電流以植入工件； If爲離子化電流(由法拉第籠110測量）； K1爲對應生產運轉期間預期出現在植入站之第一剩餘 氣體之測試氣體之校正値； P1爲因爲第一剩餘氣體之植入站壓力： K2爲夜生產運轉期間，對應預期出現在植入站之第二 剩餘氣體之測試氣體之校正値； P2爲因爲第二剩餘氣體之植入站壓力； Kn爲在生產運轉期間，對應預期在植入站存在之第η 個剩餘氣體之試氣體之校正値；及. Ρη爲因爲第η個剩餘氣體之植入站壓力。 應了解植入室22之總壓力Ρ ’在生產運轉之任何已知 時間t，爲分化剩餘氣、體成份壓力之總和’在任何時間t， Ρ=Ρ1+Ρ2+,..Ρη。剩餘氣體成份壓力値各者，Pl，P2,...Pn必須 在生產運轉期間，在時間t時內部區域52中出現之各剩餘 26 ----------I-----裝·！ (請先閱讀背面之注項再填寫本頁) -訂· 本紙張尺度適用中國國家標準（CNS)A4規格（2】〇χ 297公釐） 經濟部智慧財產局員工消費合作社印製 五、發明說明（4) 氣體成份對總壓力之比例部份予以近似估計。一簡化方式 爲假定在生產運轉期間總植入室壓力P之各剩餘氣體成份 之比例部份爲常數。即，如p丨估計爲總壓力p之40%，存 在於植入站^22中，此一40%將被視爲在任何時間t爲一常 數。 視源氣體特性或工件特性而定’選來用於電流改正公 式中之K値之數目在每一生產運轉至一生產運轉將有改變 。例如，在某一生產運轉中’利用氣氣體校正κ値已足夠 適當補償剩餘氣體效用。因此’有效離子束電流1τ可簡化 爲· IT 二 Ife-(K(氙)P) 其中，IT爲有效離子束電流供植入工件； if爲離子化電流(由法拉第籠110所測量）； P爲總植入站壓力；及 K爲氙氣體之校正値’即，-1658。 在其他生產運轉中’可決定僅利用氙氣體及光阻排氣 校正K値，即足夠適當補償內部區域52中剩餘氣體效應 在此情況下，有效離子束電流之公式可簡化成： IT=Ife-(K(氣)P(氣))e-(K(光阻材料)P(光阻材料)） 、其中：IT爲供工件植入之有效離子束電流.； If爲離子化電流(由法抵第籠測量）； .,P(氙)爲可供含氙氣體之.剩餘氣體之植入站壓力’ K(氙)爲氙氣體之校正値’即1658。 P(光阻材料)爲可供含光阻材料排氣之剩餘氣體之植入 . 27 ---------：----裝--------1T· (請先閱讀背面之注意事項再填寫本頁) ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）If = 0.0004816e- (1658) (P) where: If is the ionization current (measured by Faraday cage 110); .P is the implantation station pressure; and-K is the calibration krypton and Xenon gas is 1658. In a certain pressure range, the linear relationship between the ionization current If and the pressure p of the implantation station is approximately 値 is an acceptable approximation. Experience has found that the exponential identity can lead to the best fit, which can make the actual ionization current If And index ---------- ^ |! _ Equipment -------- tr. (Please read the notes on the back before filling out this page) 24 Α7 Wisdom of the Ministry of Economic Affairs. Consumption by employees of the Property Bureau Printed by the cooperative B7 _ V. Description of the invention The sum of squared deviations predicted by the (χ \) identity is the smallest. Some semiconductor wafer workpieces 21 may include a photoresist coating. If so, another correction must be made with a different test gas to find a corresponding K 値, which corresponds to the gas component produced by the photoresist coating on the semiconductor workpiece 21. These K 値 are then used by the production operation of the dose control circuit 66 to calculate the effective ion beam current IT. It is very obvious to those skilled in this art that the calculation and application of K 値 can be extended to all remaining gas components that are expected to be present inside the implant during production operation. Of course, it should be understood that it is necessary to judge whether the remaining gas component is important enough to be included in the calculation of the effective ion beam current IT of the agent halo control circuit 66. Some residual gas is a small part of the expected residual gas, and has little effect on the implant dose, so it does not need to be included in the above compensation procedure. In addition, as explained below, the effective ion beam calculated by the dose control circuit 66 When the current IT involves the correction of more than one K ，, the proportion of the total pressure P implanted into the interior area 52 during the production operation must be approximated. This is because each of the remaining gas components must be corrected for its existence. Residual gas composition. Production operation bottle operation • During production operation, the limit plate 70 is moved out of the beamline 14. Therefore, the pressure P measured in the implantation chamber 22 exists in the internal region 52 of the ion beam implanter. The dose control circuit 66 monitors and controls the ion implantation dose received by the workpiece 21 during the production operation. Specifically, the dose control circuit 66 monitors the ionization current If and the implantation station pressure P, using one or more calculated corrections. Κ (Κ 値) to determine the effective ion beam current IT. The calculation of IT is updated every 90 rotations of the support to ensure accurate control of the beam dose. 25 Sheet paper size applicable; National National Standard (CNS) A4 Regulations & (2) 0 X 297 Public Issue 1 '(Please read the precautions on the back before filling this page) 423〇 ^ 8 A7 B7 Ministry of Economy-Property Printed under Consumption and DuPont. 5. Description of the Invention (^) After determining the effective ion beam current IT, the dose control circuit 66 sends an appropriate control signal to the motor control system 68 = motor control system 68 controls the rotation of the workpiece support 90 via the motor 92 The angular velocity and the vertical speed of the support 90 are controlled by the stepping motor 98 to maintain uniform implantation of the workpiece 21. The dose control circuit 66 also monitors the elapsed time of the implantation production operation and stops the implantation of the workpiece 21 at an appropriate time. In order to accurately achieve the desired or target dose of each workpiece according to known methods of monitoring and controlling the implanted dose. The general formula for calculating the effective ion beam current IT is as follows: IT = Ife- (KlPl) e- (K2P2). ... e- (KnPn) where: IT is the effective ion beam current to implant the workpiece; If is the ionization current (measured by Faraday cage 110); K1 is the first surplus expected to appear at the implantation station during the corresponding production operation Testing of gases P1 is the pressure due to the first remaining gas at the implantation station: K2 is the calibration gas corresponding to the second remaining gas expected to appear at the implantation station during night production operation; P2 is because of the second residual gas Gas implantation station pressure; Kn is the calibration gas corresponding to the n-th residual gas expected to be present at the implantation station during production operation; and Pn is the implantation station pressure for the n-th residual gas. It should be understood that the total pressure P 'of the implantation chamber 22 at any known time t in the production operation is the sum of the differentiation residual gas and the body component pressure' at any time t, P = P1 + P2 +, .. Pη. The residual gas component Each of the pressures, Pl, P2, ... Pn must be left in each of the internal areas 52 at time t during the production operation. (Please read the note on the back before filling out this page)-Order · This paper size applies to China National Standard (CNS) A4 (2) 0 × 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Description of the invention (4) The proportion of the gas component to the total pressure is approximated. The simplification is to assume that the proportion of each remaining gas component of the total implantation chamber pressure P during the production operation is constant. That is, if p 丨 is estimated to be 40% of the total pressure p, it exists in the implantation station ^ 22. A 40% will be regarded as a constant at any time t. Depending on the characteristics of the source gas or the workpiece, the number of K 値 selected for the current correction formula will change from one production run to one production run For example, in a certain production operation, 'correcting κ 値 with gas gas is sufficient to properly compensate the remaining gas utility. Therefore, the 'effective ion beam current 1τ can be simplified to · IT II Ife- (K (xenon) P) where IT is the effective ion beam current for implantation of the workpiece; if is the ionization current (measured by the Faraday cage 110); P Is the total implantation station pressure; and K is the correction of xenon gas, ie, -1658. In other production operations, it may be decided to use only xenon gas and photoresist exhaust gas to correct K 値, which is sufficient to properly compensate the residual gas effect in the internal region 52. In this case, the formula of the effective ion beam current can be simplified as: IT = Ife -(K (gas) P (gas)) e- (K (photoresistive material) P (photoresistive material)), where: IT is the effective ion beam current for the implantation of the workpiece; If is the ionization current (from The measurement method is as follows: P, xenon is available for xenon-containing gas. The pressure of the implantation station of the remaining gas is 'K (xenon) is the correction of xenon gas', which is 1658. P (photoresistive material) is the implantation of the remaining gas that can be used to exhaust the photoresistive material. 27 ---------: ---- installation -------- 1T · (Please Please read the notes on the back before filling in this page) ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
A23〇 ^ 8 五、發明說明（4 站壓力；及 κ (光阻材料）爲供光阻材料排氣之校正値。 吾人了解，植入器內部區域52之總瞬間壓力P在任何 時間t係由內部區域52中所有剩餘壓力成份組成，並非僅 爲氙及光阻材料氣體成份之壓力。如上所述， P=P1+P2+…+Pn。爲簡化分析，可作比例部份PS(氙)及PS( 光阻材料)之氙對光阻材料剩餘氣體之預估，假定僅有二剩 餘氣體在生產期間存在。比例部份可用來計算P(氙)及P(光 阻材料)在任何測量之植入器室壓力P之壓力値。例如，如 估計PS(氣)=70%及PS(光阻材料)=30%，如僅有二剩餘氣體 存在內部區域52，爲計算有效束電流IT之目的，剩餘氣 氣體壓力P(氙)將可自總壓力P予以計算如下：* P(氙)=0.7〇χΡ 及剩餘光阻材料氣體壓力，Ρ(光阻材料)將可自總壓力 Ρ計算如下： Ρ(光阻材料)=〇.3〇χΡ 本發明已在較佳實施例或各實施例中予以說明，精於 此技藝人士將承認其他修正在不悖離本發明下均屬可行， 各種修正及變化均擬包括在本發明之申請專利範圍之範疇 中。 ------I------裝--------訂---------Ύ (請先閱讀背面之注意事項再填寫本頁)、 濟 部 智 慧 財 產 局 員 JL 消 費 合 作 社 印 製A23〇 ^ 8 V. Description of the invention (4 station pressure; and κ (photoresist material) is a correction for exhaust of photoresist material. I understand that the total instantaneous pressure P of the internal region 52 of the implanter is at any time t It is composed of all the remaining pressure components in the internal region 52, not just the pressure of the gas components of xenon and the photoresist material. As mentioned above, P = P1 + P2 + ... + Pn. To simplify the analysis, the proportional part PS (xenon) can be used And PS (photoresistive material) xenon estimates of the remaining gas of the photoresistive material, assuming that only two residual gases exist during production. The proportion can be used to calculate P (xenon) and P (photoresistive material) in any measurement The pressure 植入 of the implanter chamber pressure P. For example, if it is estimated that PS (gas) = 70% and PS (photoresistive material) = 30%, if only two remaining gases exist in the internal region 52, the effective beam current IT is calculated For the purpose, the residual gas pressure P (xenon) can be calculated from the total pressure P as follows: * P (xenon) = 0.7〇χΡ and residual photoresist gas pressure, P (photoresist material) will be calculated from the total pressure P The calculation is as follows: P (photoresist material) = 0.30xP The present invention has been explained in the preferred embodiments or embodiments. Those skilled in this art will acknowledge that other amendments are feasible without departing from the invention, and that various modifications and changes are intended to be included in the scope of the patent application scope of the invention. ------ I ---- ----------- Order --------- Ύ (Please read the notes on the back before filling in this page), printed by JL Consumer Cooperative, member of the Ministry of Economics and Intellectual Property