JPH0721969A - Implanting amount counting device of ion implanter - Google Patents

Implanting amount counting device of ion implanter

Info

Publication number
JPH0721969A
JPH0721969A JP5164931A JP16493193A JPH0721969A JP H0721969 A JPH0721969 A JP H0721969A JP 5164931 A JP5164931 A JP 5164931A JP 16493193 A JP16493193 A JP 16493193A JP H0721969 A JPH0721969 A JP H0721969A
Authority
JP
Japan
Prior art keywords
implanting
amount
beam current
implant
practical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5164931A
Other languages
Japanese (ja)
Inventor
Yusuke Goto
祐介 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP5164931A priority Critical patent/JPH0721969A/en
Publication of JPH0721969A publication Critical patent/JPH0721969A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To reduce an error of the practical ion implanting-amount to a set implanting amount by giving a function to count the neutralize beams by the pressure variation of an implanting member. CONSTITUTION:The beam current amount and the pressure in an implanting operation by an implanting member 1 is monitored, and the value data is delivered to a beam current correction controller 3. In the controller 3, it is decided whether the beam current is within a set scope or not, the rate of the neutralized beam is decided to calculate the correcting beam current amount, and the result is delivered to a dose controller 2. In the dose controller 2, the practical implanting amount is calculated, and the implantation is carried out until the practical implanting amount reaches to the set implanting amount. Consequently, the error between the set implanting amount and the practical implanting amount can be reduced by correcting the beam component neutralized by the pressure variation of the implanting member 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はイオン注入装置の注入量
カウント装置に関し、特に注入時のインプラント部圧力
の変化により中性化したビームをカウントする機能を有
するイオン注入装置の注入量カウント装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an implantation dose counting device for an ion implantation device, and more particularly to an implantation dose counting device for an ion implantation device having a function of counting beams that have been neutralized due to a change in implant portion pressure during implantation. .

【0002】[0002]

【従来の技術】従来のイオン注入装置の注入量カウント
方法を示す図3のブロック図、図3の注入量カウントの
フロー図を示す図4を参照すると、インプラント部1で
モニタしたビーム電流量より、ドーズコントローラ2で
実行注入量を算出し、設定注入量となるまで注入を行な
っている。
2. Description of the Related Art Referring to a block diagram of FIG. 3 showing a method of counting an implantation dose of a conventional ion implantation apparatus and FIG. 4 showing a flow chart of the implantation dose counting of FIG. The dose controller 2 calculates the execution injection amount and performs the injection until the set injection amount is reached.

【0003】即ち、処理40で注入中のビーム電流量の
モニタを行い、次の処理41で設定範囲内のビーム電流
量か否かの判断を行い、「NO」の場合には処理42で
アラームを発し、「YES」の場合は処理43で実行注
入量を算出し、次の処理44で設定注入量となったか否
かの判断を行い、「YES」の場合は注入終了(処理4
6)となり、「NO」の場合は処理45でに戻る。
That is, in process 40, the beam current amount during injection is monitored, and in the next process 41, it is judged whether or not the beam current amount is within the set range. If "NO", an alarm is issued in process 42. If YES, the execution injection amount is calculated in process 43, and it is determined whether or not the set injection amount is reached in process 44. If YES, the injection is completed (process 4).
6), and if “NO”, the process returns to step 45.

【0004】[0004]

【発明が解決しようとする課題】この従来のイオン注入
装置の注入量カウント方法では、インプラント部の圧力
変化により中性化したビームをモニタすることができ
ず、中性化したビーム分が設定注入量に対して過注入と
なる問題点があった。
According to the conventional method of counting the amount of implantation in the ion implantation apparatus, the beam neutralized due to the pressure change of the implant portion cannot be monitored, and the neutralized beam component is set and implanted. There was a problem of over-injection with respect to the amount.

【0005】[0005]

【課題を解決するための手段】本発明の構成は、インプ
ラント部にてビーム電流量をモニタし、注入量を算出す
るイオン注入装置の注入量カウント装置において、前記
インプラント部の圧力をモニタする手段と、前記インプ
ラント部にてモニタしたビーム電流量に対して前記イン
プラント部の圧力の変化で補正を行なう手段とを備える
ことを特徴とする。
The structure of the present invention comprises means for monitoring the pressure of the implant part in an implant amount counting device of an ion implanter for monitoring the beam current amount at the implant part and calculating the implant amount. And a means for correcting the beam current amount monitored by the implant section by a change in the pressure of the implant section.

【0006】[0006]

【実施例】本発明の一実施例を示す図1のブロック図を
参照すると、この実施例は、ビーム4のあたるインプラ
ント部1と、ビーム電流補正コントローラ3と、ドーズ
コントローラ2とを備える。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Referring to the block diagram of FIG. 1 showing an embodiment of the present invention, this embodiment comprises an implant part 1 which hits a beam 4, a beam current correction controller 3 and a dose controller 2.

【0007】まず、インプラント部1で注入中のビーム
電流量及び圧力をモニタし、その量データはビーム電流
量補正コントローラ3に送られる。インプラント部1の
圧力より中性化したビーム4の割合を決定し、ビーム電
流量に補正を行なう。
First, the implant portion 1 monitors the beam current amount and pressure during implantation, and the amount data is sent to the beam current amount correction controller 3. The ratio of the neutralized beam 4 is determined from the pressure of the implant part 1 and the beam current amount is corrected.

【0008】補正ビーム電流量をドーズコントローラ2
に送り、実行注入量を算出し、設定注入量となるまで注
入を行なう。
The corrected beam current amount is adjusted to the dose controller 2
, The execution injection amount is calculated, and injection is performed until the set injection amount is reached.

【0009】図1の注入量カウント装置の動作を示す図
2を参照すると、処理20で注入中のビーム電流量をモ
ニタし、同時に処理21で注入中の圧力のモニタをし、
処理22で設定範囲内のビーム電流量か否かの判断を行
い、「YES」の場合は処理25へ、「NO」の場合は
アラームを発する(処理24)。
Referring to FIG. 2 which illustrates the operation of the implant dose counter of FIG. 1, process 20 monitors the beam current during implant, and process 21 monitors the pressure during implant.
In process 22, it is determined whether or not the beam current amount is within the set range. If "YES", the process proceeds to process 25, and if "NO", an alarm is issued (process 24).

【0010】また、処理23で設定範囲内の圧力か否か
の判断を行い、「YES」の場合は処理25へ、「N
O」の場合は処理24に移行する。
In step 23, it is judged whether the pressure is within the set range or not.
In the case of “O”, the processing shifts to processing 24.

【0011】処理25で、中性化したビームの割合を決
定し、次の処理26で補正ビーム電流量を算出し、次の
処理27で実行注入量を算出し、処理28では設定注入
量となったか否かの判断を行い、「YES」の場合は注
入終了(処理30)となり、「NO」の場合は、処理2
9で最初のに戻る。
In process 25, the ratio of the neutralized beam is determined, in the next process 26, the corrected beam current amount is calculated, in the next process 27, the execution injection amount is calculated, and in process 28, the set injection amount is calculated. It is determined whether or not the injection is completed. If “YES”, the injection is completed (process 30), and if “NO”, the process 2 is performed.
Return to the first at 9.

【0012】[0012]

【発明の効果】以上説明したように、本発明は、インプ
ラント部の圧力変化により中性化したビームをカウント
する機能を有することにより、設定注入量に対する実行
注入量の誤差を減少できる効果がある。
As described above, the present invention has the function of counting the number of beams that have been neutralized due to the change in pressure at the implant portion, and thus has the effect of reducing the error in the actual injection amount relative to the set injection amount. .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の装置のブロック図である。FIG. 1 is a block diagram of an apparatus according to an embodiment of the present invention.

【図2】図1の実施例の注入量カウントのフロー図であ
る。
FIG. 2 is a flow chart of counting an injection amount in the embodiment of FIG.

【図3】従来の装置のブロック図である。FIG. 3 is a block diagram of a conventional device.

【図4】従来の注入量カウントのフロー図である。FIG. 4 is a flow chart of conventional injection amount counting.

【符号の説明】[Explanation of symbols]

1 インプラント部 2 ドーズコントローラ 3 ビーム電流補正コントローラ 20〜30,40〜46 処理 1 Implant part 2 Dose controller 3 Beam current correction controller 20-30, 40-46 Processing

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 インプラント部にてビーム電流量をモニ
タし、注入量を算出するイオン注入装置の注入量カウン
ト装置において、前記インプラント部の圧力をモニタす
る手段と、前記インプラント部にてモニタしたビーム電
流量に対して前記インプラント部の圧力の変化で補正を
行なう手段とを備えることを特徴とするイオン注入装置
の注入量カウント装置。
1. An implant dose counting device of an ion implanter for monitoring a beam current amount at an implant part and calculating an implant dose, a means for monitoring the pressure of the implant part, and a beam monitored at the implant part. An implanting dose counting device for an ion implanting device, comprising: means for correcting a current amount by a change in pressure of the implant portion.
JP5164931A 1993-07-05 1993-07-05 Implanting amount counting device of ion implanter Withdrawn JPH0721969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5164931A JPH0721969A (en) 1993-07-05 1993-07-05 Implanting amount counting device of ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5164931A JPH0721969A (en) 1993-07-05 1993-07-05 Implanting amount counting device of ion implanter

Publications (1)

Publication Number Publication Date
JPH0721969A true JPH0721969A (en) 1995-01-24

Family

ID=15802566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5164931A Withdrawn JPH0721969A (en) 1993-07-05 1993-07-05 Implanting amount counting device of ion implanter

Country Status (1)

Country Link
JP (1) JPH0721969A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100407482B1 (en) * 1998-06-11 2003-12-18 액셀리스 테크놀로지스, 인크. Ion dosage measurement apparatus for an ion beam implanter and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100407482B1 (en) * 1998-06-11 2003-12-18 액셀리스 테크놀로지스, 인크. Ion dosage measurement apparatus for an ion beam implanter and method

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Effective date: 20000905