CN102315069B - Method for detecting ion implantation machine - Google Patents
Method for detecting ion implantation machine Download PDFInfo
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- CN102315069B CN102315069B CN 201010228194 CN201010228194A CN102315069B CN 102315069 B CN102315069 B CN 102315069B CN 201010228194 CN201010228194 CN 201010228194 CN 201010228194 A CN201010228194 A CN 201010228194A CN 102315069 B CN102315069 B CN 102315069B
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Abstract
The invention discloses a method for detecting an ion implantation machine. Before the machine is detected, a certain amount of ions are implanted into a control wafer in advance so as to enable the control wafer to enter a stable state in advance, and when the machine is detected subsequently, the gradual increase speed on the amount of second ions implanted into the control wafer can be decreased, so that the precision in detecting the machine is increased.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of detection method of ion injection machine table.
Background technology
Along with the extensive use of electronic equipment, semi-conductive manufacturing process has obtained development at full speed, in semi-conductive manufacturing process, relates to ion implantation technology.Ion implantation dosage is important parameter in ion implantation technology, usually ion injection machine table according to default ion implantation dosage to wafer emitting ions bundle, to carry out Implantation, yet, in actual applications, long or the board other reasons such as break down due to board service time, the ion implantation dosage that ion injection machine table provides to wafer is compared with default ion implantation dosage standard value drift has been occured.
In order to overcome the drifting problem of ion implantation dosage, need often ion injection machine table to be detected, to ion implantation dosage is accurately controlled.
Fig. 1 is the flow chart that the prior art intermediate ion injects the detection method of board, and as shown in Figure 1, the detection method that the prior art intermediate ion injects board comprises the steps:
Before control wafer carrying out Implantation, usually adopt the fire damage measuring instrument to obtain the ion implantation dosage of control wafer.
Briefly, the principle that the fire damage measuring instrument obtains ion implantation dosage is: to control wafer Emission Lasers bundle, and the reflectivity of measurement laser, the reflectivity of laser can reflect the degree of injury of lattice in control wafer to a certain extent, and the degree of injury of lattice can reflect the energy that control wafer absorbs, i.e. ion implantation dosage, therefore, the fire damage measuring instrument passes through to measure laser reflectivity, and according to certain relation, laser reflectivity can be scaled ion implantation dosage.
Adopt board to be detected to carry out Implantation to control wafer, the dosage of Implantation is according to the ion implantation dosage standard value.
After Implantation is complete, adopt the fire damage measuring instrument again to obtain the ion implantation dosage of control wafer.
Whether step 104 judges the number of times of Implantation more than or equal to 3 times, if more than or equal to 3 times, and direct execution in step 106; Otherwise, execution in step 105.
When ion injection machine table is detected, usually can repeat above-mentioned steps 101 to 105 3 times.
The process of short annealing can be repaired the lattice damage of control wafer in ion implantation process.
In the ideal case, after short annealing, the ion implantation dosage of control wafer reverts to the numerical value of the first ion implantation dosage, but, in actual applications, short annealing not necessarily can be repaired lattice damage fully, so the ion implantation dosage of the control wafer after short annealing and the first ion implantation dosage have small gap.
In addition, in actual applications, after obtaining the first implantation dosage at every turn, also can be more current the difference of time the first ion implantation dosage and last the first ion implantation dosage, if in three the first ion implantation dosages, the difference of current inferior the first ion implantation dosage and last the first ion implantation dosage is excessive, shows that control wafer is underproof, finishes whole testing process.
So far, this result of flow.
In actual applications, we also found through experiments, when board and control wafer are all qualified, along with the increase (increase of Implantation number of times) of detection time, the second ion implantation dosage can increase progressively gradually, especially, when beginning to detect, increasing velocity is than very fast.Fig. 2 is that the second ion implantation dosage is with the curve that increases progressively of Implantation number of times, in the corresponding experiment of Fig. 2, five steps 101 have been repeated to 105, the type of Implantation is boron (B) element, as shown in Figure 2, the number of times that when abscissa is the board detection, step 102 intermediate ion injects, unit are inferior, ordinate is the second ion implantation dosage, and unit is an atom/cm
2As can be seen from Figure 2, the second ion implantation dosage increases progressively with the Implantation number of times, and along with the Implantation number of times increases, increasing velocity reduces gradually.
Yet, in the prior art, step 101 to 105 cycle-index is generally 5 times, as can be seen from Figure 2,3 times the increasing velocity of corresponding the second ion implantation dosage ratio is very fast, in this case, and might be in the situation that board be qualified, the second ion implantation dosage that obtains for 3 times and the difference of ion implantation dosage standard value differ and establish a capital in the threshold range that sets in advance, and have reduced the accuracy of detection of ion injection machine table.
Summary of the invention
In view of this, the invention provides a kind of ion injection machine table detection method, can improve the accuracy of detection of ion injection machine table.
For solving the problems of the technologies described above, technical scheme of the present invention is achieved in that
A kind of detection method of ion injection machine table, the method comprises:
Steps A, control wafer is carried out Implantation in advance;
Step B, control wafer is carried out short annealing;
Step C, obtain the first ion implantation dosage of control wafer;
Step D, according to the ion implantation dosage standard value that sets in advance, control wafer is carried out Implantation;
Step e, obtain the second ion implantation dosage of control wafer;
Step F, judge the second Implantation number of times whether more than or equal to N time, if more than or equal to N time, direct execution in step G; Otherwise, return to execution in step B, wherein, N is the natural number more than or equal to 4;
Step G, judge the second ion implantation dosage of obtaining for N time and ion implantation dosage standard value difference whether all in the first threshold scope that sets in advance, if so, judge that ion injection machine table is qualified; If the second ion implantation dosage that in N time, arbitrary time is obtained and the difference of ion implantation dosage standard value are greater than or less than the first threshold scope that sets in advance, judge that ion injection machine table is defective.
The energy of Implantation described in steps A is 20000 electron-volts of eV to 50000 electron-volt of eV, and the dosage of Implantation is 1 * 10
14Individual atom/cm
2To 1 * 10
15Individual atom/cm
2, and the ionic type that injects is identical with the ionic type that step D injects.
The maximum temperature of short annealing described in step B is 900 degrees centigrade to 1100 degrees centigrade, and is 10 seconds to 30 seconds in the time of staying of maximum temperature.
Described N is 6～10.
The 2nd time to the N time execution in step C and between execution in step D, further comprise: the difference of calculating current time the first ion implantation dosage and last time first ion implantation dosage that should be last time, if the difference of current time the first ion implantation dosage and last time first ion implantation dosage that should be last time is greater than the Second Threshold that sets in advance, process ends; Otherwise, execution in step D.
As seen, in the detection method of a kind of ion injection machine table provided by the present invention, before carrying out the board detection, in advance control wafer is injected the ion of doses, to impel control wafer to be introduced in advance stable state, when detecting, can reduce the increasing velocity of the second ion implantation dosage of control wafer when the follow-up board that carries out, improve the precision that board detects.
In addition, when carrying out the board detection, can repeatedly carry out Implantation, and carry out obtaining of the second ion implantation dosage, also can improve the precision that board detects.
Description of drawings
Fig. 1 is the flow chart that the prior art intermediate ion injects the detection method of board.
Fig. 2 is that the second ion implantation dosage is with the curve that increases progressively of Implantation number of times.
The flow chart of the detection method of a kind of ion injection machine table that Fig. 3 invention provides.
Fig. 4 is for adopting after technical scheme of the present invention the second ion implantation dosage with the curve that increases progressively of Implantation number of times.
Embodiment
For making purpose of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, scheme of the present invention is described in further detail.
Core concept of the present invention is: before carrying out the board detection, in advance control wafer is injected the ion of doses, impelling control wafer to be introduced in advance stable state, when detecting, can reduce the increasing velocity of the second ion implantation dosage of control wafer when the follow-up board that carries out, improve the precision that board detects, in addition, when carrying out the board detection, can repeatedly carry out Implantation, and carry out obtaining of the second ion implantation dosage, also can improve the precision that board detects
The flow chart of the detection method of a kind of ion injection machine table that Fig. 3 invention provides.As shown in Figure 3, comprise the following steps:
According to Fig. 2 as can be known, the second ion implantation dosage increases progressively with the Implantation number of times, and along with the Implantation number of times increases, increasing velocity reduces gradually and tends to be steady, as seen, along with increasing of ion implantation dosage number of times, control wafer progresses into stable state, therefore, between board is detected, in advance control wafer is injected the ion of doses, enter stable state to impel control wafer, when detecting, can reduce the increasing velocity of the second ion implantation dosage of control wafer at the follow-up board that carries out.
The energy of Implantation be 20000 electron-volts (eV) to 50000 electron-volts (eV), the dosage of Implantation is 1 * 10
14Individual atom/cm
2To 1 * 10
15Individual atom/cm
2, and the ionic type that injects is identical with the ionic type that subsequent step 304 injects.
In this step, in order accurately to control the dosage of Implantation, in the ideal case, adopt qualified board to carry out in advance Implantation to control wafer, still, in practical operation, in order to improve the efficient of detection, also can use board to be detected to carry out in advance Implantation to control wafer.
In order to repair the lattice damage in ion implantation process, control wafer is carried out short annealing process.
When carrying out short annealing, usually control wafer is heated to maximum temperature from room temperature, then control wafer is cooled to room temperature naturally from maximum temperature again, in this step, the maximum temperature of short annealing is 900 degrees centigrade to 1100 degrees centigrade, and is 10 seconds to 30 seconds in the time of staying of maximum temperature.
This step is same as the prior art, usually adopts the fire damage measuring instrument to obtain the ion implantation dosage of control wafer, and the ion implantation dosage that obtains is before board to be detected carries out Implantation, the ion implantation dosage of control wafer.
This step is same as the prior art, adopts board to be detected to carry out Implantation to control wafer, and the dosage of Implantation is according to the ion implantation dosage standard value.
This step is same as the prior art, after Implantation is complete, adopts the fire damage measuring instrument again to obtain the ion implantation dosage of control wafer, and the ion implantation dosage that again obtains is after board to be detected carries out Implantation, the ion implantation dosage of control wafer.
Whether step 306 judges the number of times of Implantation more than or equal to N time, if more than or equal to N time, and direct execution in step 307; Otherwise, return to execution in step 302, wherein, N is the natural number more than or equal to 4.
In order to improve the accuracy of detection of ion injection machine table, take into account simultaneously detection efficiency, preferably, N is 6～10, that is to say, repeats above-mentioned steps 302 to 306 6～10 times.
Whether step 307, the difference that judges the second ion implantation dosage of obtaining for N time and ion implantation dosage standard value all in the first threshold scope that sets in advance, if so, judge that ion injection machine table is qualified; If the second ion implantation dosage that in N time, arbitrary time is obtained and the difference of ion implantation dosage standard value are greater than or less than the first threshold scope that sets in advance, judge that ion injection machine table is defective.
Wherein, the value of first threshold scope is empirical value, is determined on a case-by-case basis.
In addition, with prior art be similarly, after the 2nd time to the N time execution in step 303, before execution in step 304, all can further comprise: the difference of calculating current time the first ion implantation dosage and last time first ion implantation dosage that should be last time, if the difference of current time the first ion implantation dosage and last time first ion implantation dosage that should be last time shows that greater than the Second Threshold that sets in advance control wafer is underproof, finishes whole testing process; Otherwise, execution in step 304.Wherein, the value of Second Threshold is empirical value, is determined on a case-by-case basis.
So far, this flow process finishes.
Fig. 4 is for adopting after technical scheme of the present invention the second ion implantation dosage with the curve that increases progressively of Implantation number of times.In the corresponding experiment of Fig. 4, board and control wafer are all qualified, and N is 8, and the type of Implantation is boron (B) element.As shown in Figure 4, the number of times that when abscissa is the board detection, step 304 intermediate ion injects, unit are inferior, and ordinate is the second ion implantation dosage, and unit is an atom/cm
2As can be seen from Figure 4, the second ion implantation dosage temporal evolution is more steady.
To sum up, the detection method of a kind of ion injection machine table provided by the present invention comprises: steps A, control wafer is carried out Implantation in advance; Step B, control wafer is carried out short annealing; Step C, obtain the first ion implantation dosage of control wafer; Step D, according to the ion implantation dosage standard value that sets in advance, control wafer is carried out Implantation; Step e, obtain the second ion implantation dosage of control wafer; Step F, judge Implantation number of times whether more than or equal to N time, if more than or equal to N time, direct execution in step G; Otherwise, return to execution in step B, wherein, N is the natural number more than or equal to 4; Step G, judge the second ion implantation dosage of obtaining for N time and ion implantation dosage standard value difference whether all in the first threshold scope that sets in advance, if so, judge that ion injection machine table is qualified; If the second ion implantation dosage that in N time, arbitrary time is obtained and the difference of ion implantation dosage standard value are greater than or less than the first threshold scope that sets in advance, judge that ion injection machine table is defective.As seen, according to method provided by the present invention, before carrying out the board detection, in advance control wafer is injected the ion of doses, be introduced in advance stable state to impel control wafer, when the follow-up board that carries out when detecting, can reduce the increasing velocity of the second ion implantation dosage of control wafer, improve the precision that board detects.In addition, when carrying out the board detection, can repeatedly carry out Implantation, and carry out obtaining of the second ion implantation dosage, also can improve the precision that board detects.
The above is only preferred embodiment of the present invention, is not for limiting protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (3)
1. the detection method of an ion injection machine table, the method comprises:
Steps A, control wafer is carried out Implantation in advance, wherein, the energy of described Implantation is 20000 electron-volts of eV to 50000 electron-volt of eV, and the dosage of Implantation is 1 * 10
14Individual atom/cm
2To 1 * 10
15Individual atom/cm
2, and the ionic type that injects is identical with the ionic type that step D injects;
Step B, control wafer is carried out short annealing; The maximum temperature of described short annealing is 900 degrees centigrade to 1100 degrees centigrade, and is 10 seconds to 30 seconds in the time of staying of maximum temperature;
Step C, obtain the first ion implantation dosage of control wafer;
Step D, according to the ion implantation dosage standard value that sets in advance, control wafer is carried out Implantation;
Step e, obtain the second ion implantation dosage of control wafer;
Step F, judge the second Implantation number of times whether more than or equal to N time, if more than or equal to N time, direct execution in step G; Otherwise, return to execution in step B, wherein, N is the natural number more than or equal to 4;
Step G, judge the second ion implantation dosage of obtaining for N time and ion implantation dosage standard value difference whether all in the first threshold scope that sets in advance, if so, judge that ion injection machine table is qualified; If the second ion implantation dosage that in N time, arbitrary time is obtained and the difference of ion implantation dosage standard value are greater than or less than the first threshold scope that sets in advance, judge that ion injection machine table is defective.
2. method according to claim 1, is characterized in that, described N is 6～10.
3. method according to claim 1, it is characterized in that, the 2nd time to the N time execution in step C and between execution in step D, further comprise: the difference of calculating current time the first ion implantation dosage and last time first ion implantation dosage that should be last time, if the difference of current time the first ion implantation dosage and last time first ion implantation dosage that should be last time is greater than the Second Threshold that sets in advance, judge that control wafer is defective, process ends; Otherwise, execution in step D.
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|---|---|---|---|
| CN 201010228194 CN102315069B (en) | 2010-07-08 | 2010-07-08 | Method for detecting ion implantation machine |
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| CN102315069B true CN102315069B (en) | 2013-06-19 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1248061A (en) * | 1998-06-11 | 2000-03-22 | 易通公司 | Ion dosing device and method for ion-beam injector |
| CN1989586A (en) * | 2004-07-23 | 2007-06-27 | 应用材料有限公司 | Method of determining dose uniformity of a scanning ion implanter |
| JP2007173716A (en) * | 2005-12-26 | 2007-07-05 | Fujifilm Corp | Dose shift evaluation method |
-
2010
- 2010-07-08 CN CN 201010228194 patent/CN102315069B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1248061A (en) * | 1998-06-11 | 2000-03-22 | 易通公司 | Ion dosing device and method for ion-beam injector |
| CN1989586A (en) * | 2004-07-23 | 2007-06-27 | 应用材料有限公司 | Method of determining dose uniformity of a scanning ion implanter |
| JP2007173716A (en) * | 2005-12-26 | 2007-07-05 | Fujifilm Corp | Dose shift evaluation method |
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