CN100456427C - Method and device for controlling ion implantation - Google Patents
Method and device for controlling ion implantation Download PDFInfo
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- CN100456427C CN100456427C CNB200610000823XA CN200610000823A CN100456427C CN 100456427 C CN100456427 C CN 100456427C CN B200610000823X A CNB200610000823X A CN B200610000823XA CN 200610000823 A CN200610000823 A CN 200610000823A CN 100456427 C CN100456427 C CN 100456427C
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000005468 ion implantation Methods 0.000 title abstract description 7
- 238000002513 implantation Methods 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 23
- 239000013078 crystal Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 150000001768 cations Chemical class 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 101150038956 cup-4 gene Proteins 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000032671 dosage compensation Effects 0.000 description 4
- 238000013022 venting Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Abstract
A method for controlling ion implantation includes generating a linear beam by beam generator, injecting beam vertically into chip and using Faraday cup to detect beam value, outputting signal reflecting beam size to controller, carrying out communication between controller and chip actuator and driving chip to carry out scanning up and down by receiving parameter command sent by controller, transmitting beam in sealed vacuum cavity, utilizing vacuum unit to maintain vacuum environment of said cavity and controlling implantation dosage by controller. The device for realizing said method is also disclosed.
Description
Technical field
The present invention relates to a kind of semiconductor device manufacturing control system, relate in particular to a kind of method and apparatus that ion injects of controlling.
Background technology
Ion implantor is a kind of by guiding impurity injection semiconductor wafer, thereby changes the equipment of the conductivity of wafer, and wherein, the degree of depth that impurity injects and the uniformity of density have all directly determined to inject the quality of wafer.In the moment of ion beam strikes in wafer surface, cause photoresist or be coated in the other materials on the wafer and produce the phenomenon of venting, volatilization or sputter, thereby cause fluctuations of vacuum, implantation dosage and uniformity have all been caused influence.For example, when being caused that by reasons such as venting vacuum values rises, having unicharged cation in the line will collide with the residual atom of reason generation such as venting, thereby the part cation in the line is neutralized, and is injected in the middle of the wafer then.After part line cation was neutralized, the equipment (normally Faraday cup) that detects line will detect line to be reduced; On the contrary, under the very stable situation of the vacuum values of bunch and wafer surface, system keeps high vacuum always, causes that the collision probability of electron exchange will be seldom, and detected line just can not change.
The bump that causes electron exchange also can produce a problem, and that is exactly that the device (Faraday cup) that detects line can only detect charged ion, and the neutral particle that electronics produces after clashing into can not be detected.And the part neutral particle still can be injected into the energy identical with line and go in the wafer, becomes the part of accumulated dose.Like this, detected line is littler than actual line, and controller tends to think that other factors (as the ion source instability) in addition cause the minimizing of line and remove to adjust the scanning times of wafer, carries out line compensation control, and the dosage that makes wafer inject at last is excessive.
Reasonable method is never found in the ion implantor field on this problem, only making an issue of aspect the raising vacuum stability, but the problem of fluctuations of vacuum can't be eliminated in ion implantation process; The someone proposed in ion implantation process the variation according to vacuum values and adjusted source parameters immediately afterwards, and the disadvantage of this method is a control hysteresis, can't reach the purpose of instant control.Therefore, in ion implantation process, not can not get solution with the inaccurate problem of dosage because the implantation homogeneity that fluctuations of vacuum causes is high always.
Therefore, how eliminating fluctuations of vacuum to injecting the influence of quality and dosage with the suitable method and apparatus of a cover, is the problem that the ion implantor control system need solve.
Summary of the invention
The present invention be directed to when system vacuum fluctuates in the prior art, control the difficult situation of ion stabilized injection, the new method and apparatus of one cover has been proposed, mode with direct detection beam rheologyization provides foundation for the control ion injects compensation, rather than go to detect the variation of vacuum pressure, thereby reach the purpose of control ion implantation uniformity and dosage accuracy.
The present invention is achieved through the following technical solutions: the device that the control ion injects, comprise and produce line device, wafer, Faraday cup, crystal chip driver, controller, vacuum system device, vacuum cavity, wherein producing the line device is that the element that needs inject is produced by ion source ionization, through the line of a straight line after the magnetic field analysis filtration treatment; Line vertically is injected in the middle of the wafer after overscanning, focusing, angle modification, energy acceleration etc. are handled; Faraday cup is used for the detection beam flow valuve, exports the signal of a reflection line size and gives controller; Crystal chip driver can carry out communication with controller, drives wafer by the parameter command of accepting the controller transmission and scans up and down perpendicular to the paper direction; Line is in transmission course in the vacuum cavity of a sealing, its vacuum environment then rely on the vacuum system device keep and the vacuum system measurement device to the vacuum values of various piece all send to controller, control implantation dosage and judge whether the fluctuation vacuum values in the injection process goes beyond the scope by controller, thereby whether decision is proceeded to inject.
The method that the control ion injects the steps include:
1. by producing line device output line, this line must be to have final line certain energy, that preparation is injected; Simultaneously this line must be stable, do not cause the line before the fluctuations of vacuum, the value of this line is decided to be the line reference value that wafer is injected into the position of ion.
2. the controller memory chip is in the line reference value of this position.
3. the beginning ion injects, and Faraday cup detects the line value of wafer in this position, is detecting under the stable situation of source parameters, and it is caused by fluctuations of vacuum to suppose that this line changes when complete, and does not consider the factor that other is possible.
Controller will with the wafer of storage the line reference value of this position and current detection to wafer compare in the line value of this position, obtain a line difference, controller is stored this line difference.But this line difference can not directly reflect the influence of fluctuations of vacuum to dosage, because the neutral particle that in vacuum descends, produces owing to particle encounter, has only the part that can become dosage near the neutral particle of the linearity region of wafer cavity, and in the non-rectilinear zone away from the wafer cavity, neutral particle can filter or be dropped in the electrostatic scanning process by analyzed magnet.Therefore, must judge what of actual loss line of inelastic region, thereby determine the compensating parameter of dosage.
5. at different ion implant systems, different injection elements all can have different dosage compensation parameters, and this parameter need be determined according to a large amount of experiments and empirical value.Controller is adjusted the wafer scan frequency and is compensated implantation dosage, thereby reach the ion implantation dosage requirement of wafer in this position by compensating parameter.
The present invention has following remarkable advantage:
1. adopted a kind of method of new detection fluctuations of vacuum, replace detecting the variation of vacuum pressure by the variation that detects line, the influence of can more direct judgement fluctuations of vacuum ion being injected, and make feedback with line and on control compensation, do not have time-delay, favourable to the control of optimizing whole ion injection.
2. determined that a line reference value as the fiducial value that the control ion injects, can calculate with the line reference value as a comparison when line in the injection process changes, thereby than being easier to definite new sweep parameter.
3. the notion of dosage compensation parameter has been proposed.Come the gated sweep parameter iff the difference that changes according to line, the result who finally causes scanning times often is too much, implantation dosage is excessive, the dosage compensation parameter that proposes can be controlled the active loss of roughly determining line as the case may be, thereby can reduce the error of implantation dosage and target dose significantly.
Description of drawings
Fig. 1 is a simple block diagram of the present invention.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail:
As shown in Figure 1, the device that the control ion injects, comprise and produce line device 1, wafer 3, Faraday cup 4, crystal chip driver 5, controller 6, vacuum system device 7, vacuum cavity 8, wherein producing line device 1 is that the element that needs inject is produced by ion source ionization, through the line 2 of a straight line after the magnetic field analysis filtration treatment; Line 2 vertically is injected in the middle of the wafer 3 after overscanning, focusing, angle modification, energy acceleration etc. are handled; Faraday cup 4 is used for detecting line 2 values, exports the signal of reflection line 2 sizes and gives controller 6; Controller 6 can be general all-purpose computer, can be single chip circuit also, as long as have certain calculation and storage capacity, possesses simple input/output function and gets final product; Crystal chip driver 5 comprises a servomotor (not shown), air-bearing (not shown) and moving component (not shown), it is the general kinematic system of an ion implantor, and crystal chip driver 5 can carry out communication with controller 6, drives wafer 3 by the parameter command of accepting controller 6 transmission and scans up and down perpendicular to the paper direction.All be in line 2 transmission courses in the vacuum cavity 8 of a sealing, vacuum environment then relies on general vacuum system device 7 to keep, general vacuum system device 7 has the vacuum gauge (not shown) of vacuum pump (not shown), isolating valve (not shown) and detected pressures etc., and the vacuum values of the various piece that the vacuum gauge (not shown) measures all sends to controller 5, judge by controller 5 whether the fluctuation vacuum values in the injection process goes beyond the scope, thereby whether decision is proceeded to inject.
The stroke of line 2 from generation line device 1 to wafer 3 is crooked in practice, pass through the magnetic core logical circuit deflection of magnetic analyzer (not shown) during this time, also pass through the electrostatic scanning deflection of scanning power supply (not shown), on the theory, have only satisfactory line just can be injected at last.In the wafer injection process, line 2 forms the light curtain that is parallel to paper through overscanning and injects wafer 3, and wafer 3 can be done scanning up and down perpendicular to paper under the driving of crystal chip driver 5, thereby makes line 2 can be injected into each position of wafer 3.
Before injecting, determine under the stable situation of the parameters of line 2, crystal chip driver 6 makes wafer 3 leave the position that line injects, there is not the fluctuations of vacuum phenomenon this moment, judge then whether the system vacuum degree reaches stable high vacuum requirement, thereby by the beam current signal that Faraday cup 4 is gathered, determine a line reference value, store in the controller 6.
What controller 6 need be done is the real-time line value of preserving each scanning element in real time, and remember corresponding scanning position, determine the dosage of this position needs compensation then according to the line difference of each position, can use the dosage compensation parameter that draws with experiment in the calculation process, need determine the actual dose of compensation.In the end in the scanning several times, controller 6 calculates the dosage aggregate-value that each position need compensate, and carries out the position compensation of each point by the speed of gated sweep, thereby arrives the dosage requirement of injecting.
Specific embodiment of the present invention elaborates summary of the invention.For persons skilled in the art, any conspicuous change of under the prerequisite that does not deviate from the principle of the invention it being done all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities.
Claims (1)
1, a kind of method of controlling the ion injection, its step comprises:
(1) by producing line device output line, the value of this line is decided to be the line reference value that wafer is injected into the position of ion;
(2) the controller memory chip is in the line reference value of this position;
(3) the beginning ion injects, and Faraday cup detects the line value of wafer in this position;
(4) controller is compared the wafer of storage with detected wafer in the line reference value of this position in the line value of this position, obtains the line difference of wafer in this position, and the controller memory chip is in the line difference of this position;
(5) controller is adjusted the wafer scan frequency and is compensated implantation dosage by compensating parameter, reaches the dosage requirement that the ion of wafer in this position injects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610000823XA CN100456427C (en) | 2006-01-13 | 2006-01-13 | Method and device for controlling ion implantation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610000823XA CN100456427C (en) | 2006-01-13 | 2006-01-13 | Method and device for controlling ion implantation |
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| Publication Number | Publication Date |
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| CN101000870A CN101000870A (en) | 2007-07-18 |
| CN100456427C true CN100456427C (en) | 2009-01-28 |
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| CNB200610000823XA Expired - Fee Related CN100456427C (en) | 2006-01-13 | 2006-01-13 | Method and device for controlling ion implantation |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347194A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | Method for accurately controlling ion implantation distribution uniformity |
| CN103632993B (en) * | 2012-08-20 | 2017-12-08 | 北大方正集团有限公司 | A kind of real time monitoring apparatus and method |
| CN104392885B (en) * | 2014-11-13 | 2017-05-10 | 北京中科信电子装备有限公司 | Multi-station high-low temperature target table |
| JP6644596B2 (en) * | 2016-03-18 | 2020-02-12 | 住友重機械イオンテクノロジー株式会社 | Ion implantation method and ion implantation apparatus |
| CN106653634B (en) * | 2016-10-09 | 2019-04-30 | 武汉华星光电技术有限公司 | The method of monitoring ion implant dosage and implantation uniformity |
| CN106547013A (en) * | 2016-10-18 | 2017-03-29 | 中国原子能科学研究院 | A kind of ion source beam diagnostics subtended angle measuring instrument |
| CN207458887U (en) * | 2017-06-16 | 2018-06-05 | 上海凯世通半导体股份有限公司 | Ion implantation device |
| CN109256311B (en) * | 2018-10-12 | 2020-10-16 | 苏州晋宇达实业股份有限公司 | Ion implantation method |
| CN109887858A (en) * | 2019-03-13 | 2019-06-14 | 德淮半导体有限公司 | The measuring device and its measurement method of ion implantation dosage |
| CN110031885A (en) * | 2019-03-26 | 2019-07-19 | 上海华力微电子有限公司 | A kind of line real time monitoring apparatus and method |
| CN112259431A (en) * | 2020-10-14 | 2021-01-22 | 北京烁科中科信电子装备有限公司 | Target platform station control method based on position compensation |
| CN113539803A (en) * | 2021-06-28 | 2021-10-22 | 上海华虹宏力半导体制造有限公司 | Batch type ion implantation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1208245A (en) * | 1997-01-17 | 1999-02-17 | 易通公司 | Dose control for use in ion implanter |
| CN1248061A (en) * | 1998-06-11 | 2000-03-22 | 易通公司 | Ion dosing device and method for ion-beam injector |
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2006
- 2006-01-13 CN CNB200610000823XA patent/CN100456427C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1208245A (en) * | 1997-01-17 | 1999-02-17 | 易通公司 | Dose control for use in ion implanter |
| CN1248061A (en) * | 1998-06-11 | 2000-03-22 | 易通公司 | Ion dosing device and method for ion-beam injector |
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| CN101000870A (en) | 2007-07-18 |
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