CN102347194A - Method for accurately controlling ion implantation distribution uniformity - Google Patents
Method for accurately controlling ion implantation distribution uniformity Download PDFInfo
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- CN102347194A CN102347194A CN2010102430881A CN201010243088A CN102347194A CN 102347194 A CN102347194 A CN 102347194A CN 2010102430881 A CN2010102430881 A CN 2010102430881A CN 201010243088 A CN201010243088 A CN 201010243088A CN 102347194 A CN102347194 A CN 102347194A
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- faraday cup
- dosage
- control device
- ion implantation
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Abstract
The invention, which relates to an ion implantation machine and belongs to the semiconductor manufacturing field, discloses a method for accurately controlling ion implantation distribution uniformity. The method is characterized by: high-precision multichannel beam and dosage acquisition, generation of W scanning waveform, detection and correction of horizontal direction beam distribution density, beam parallelism detection, and synchronization of horizontal scanning and vertical scanning. The system comprises: a mobile Faraday cup, a closed loop Faraday cup, a sampling Faraday cup, a dosage controller, a position synchronization plate, a linear motor and a NI PXI real time measurement and control system. By using the method of the invention, accurate detection of ion dosage of the ion implantation can be automatically realized; control of the ion implantation distribution uniformity and dosage accuracy can be automatically realized.
Description
Technical field
The present invention relates to ion implantor uniformity control method, relate to ion implantor, belong to semiconductor device and prepare the field of making.
Background technology
Ion implantor uniformity control technology is one of key technology of ion implantor; Its operation principle is based on various controls and method of measurement equably, accurately is injected into entire wafer surface with ion by the dosage of setting with device; All adopt the mode of electric scanning like horizontal direction and vertical direction; The size of the scanning voltage through real time altering level and vertical direction changes the speed that moves horizontally and the vertical moving speed of bundle, thereby changes the distribution density of injecting ion; Another kind of mode is restrainted fixed exactly, and the two-dimentional machinery through control wafer moves and reaches the surface that ion is injected into wafer equably.
The invention provides the ion implantor uniformity control method that a kind of mechanical scanning combines with electric scanning, this control method architecture is simple, measures with control accurate, reliable.
Summary of the invention
The present invention relates to a kind of ion implantor uniformity control method.
The even control system of a kind of ion implantor comprises multichannel, many gears line and dosage exact acquisition function, horizontal direction electric scanning control, vertical direction mechanical scanning motion control, horizontal direction electric scanning and vertical direction mechanical scanning method for synchronous.
Description of drawings
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further introduction, but not as the qualification to patent of the present invention.
Fig. 1 is an ion implantation dosage control system system assumption diagram.
Fig. 2 is the position synchronous signal timing diagram.
Among Fig. 1, the ion implantation dosage control system comprises mobile Faraday cup, closed loop Faraday cup, sampling Faraday cup, dosage control device, position synchronous plate, linear electric motors and NI PXI TT&C system.
Among Fig. 2, P.E.Q1/P.E.Q2 is the position synchronous pulse that linear electric motors and mobile Faraday cup movement position synchronizing signal, P.E.Q produce for the position synchronous plate.
Embodiment
Moving Faraday cup, closed loop Faraday cup and sampling Faraday cup links to each other with the dosage control device through coaxial cable; Wherein move faraday and be used to measure beam profile and the detection of horizontal direction bundle distribution density; Mobile Faraday cup whenever moves lock-out pulse of an equidistant generation; This synchronization pulse (P.E.Q2) is delivered to the dosage control device after handling through the position synchronous plate; After the dosage control device detects this synchronizing signal, just respond the line collection and interrupt, gather the line that moves Faraday cup.Two sampling Faraday cups are used to measure the angle and the depth of parallelism of ion beam.The closed loop Faraday cup is used for the real-time measurement of implanter implantation dosage.
The dosage control device links to each other with the real-time TT&C system of NI with three hardware interrupts IRQ1, IRQ2 and IRQ3 through a SPI interface; Wherein the SPI interface is used for data transmission between dosage control device and the real-time TT&C system of NI, and three interrupt signals are used for three kinds of demanding Event triggered of real-time performance.
The position synchronous plate is used for two-way position synchronous signal (P.E.Q1 and P.E.Q2) acquisition time automatically, produces the output of one road lock-out pulse, when P.E.Q1 or rising edge signal of P.E.Q2 appearance, produces a pulse output signals (P.E.Q) that 50us is wide.P.E.Q1 is a linear electric motors vertical scanning displacement synchronizing signal; Be linear electric motors whenever move one equidistant, P.E.Q1 output level generation once inside out is when rising edge appears in P.E.Q1; P.E.Q produces a pulse, triggers " W " sweep waveform of dosage control device output.
The above elaborates content of the present invention.As far as persons skilled in the art, any conspicuous change of under the prerequisite that does not deviate from spirit of the present invention, it being done all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities.
Claims (3)
1. an ion implantor uniformity control system comprises: move Faraday cup, closed loop Faraday cup, sampling Faraday cup, dosage control device, position synchronous plate, linear electric motors and NI PXI TT&C system, its binding situation is each other seen Fig. 1.
2. right 1 described mobile Faraday cup, closed loop Faraday cup and sampling Faraday cup link to each other with the dosage control device through coaxial cable; Wherein move Faraday cup and be used to measure beam profile and the detection of horizontal direction bundle distribution density; Mobile Faraday cup whenever moves lock-out pulse of an equidistant generation; This synchronization pulse P.E.Q2 delivers to the dosage control device after handling through the position synchronous plate; After the dosage control device detected this synchronizing signal, the collection of real-time response line was interrupted, and gathered the line that moves Faraday cup.
3. right 1 said position synchronous plate is used for two-way position synchronous signal P.E.Q1 and the automatic acquisition time of P.E.Q2; Produce the output of one road lock-out pulse; When P.E.Q1 or rising edge signal of P.E.Q2 appearance, the position synchronous plate produces the pulse output signals P.E.Q that 50us is wide.P.E.Q1 is a linear electric motors vertical scanning displacement synchronizing signal; Be linear electric motors whenever move one equidistant; P.E.Q1 output level generation once inside out, when rising edge appearred in P.E.Q1, P.E.Q produced a pulse; Trigger " W " sweep waveform of dosage control device output, be used between horizontal sweep and the vertical scanning synchronously.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102430881A CN102347194A (en) | 2010-08-02 | 2010-08-02 | Method for accurately controlling ion implantation distribution uniformity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102430881A CN102347194A (en) | 2010-08-02 | 2010-08-02 | Method for accurately controlling ion implantation distribution uniformity |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295864A (en) * | 2012-03-02 | 2013-09-11 | 无锡华润上华科技有限公司 | Ion beam concentration detection method and ion beam detection system |
| CN103632993A (en) * | 2012-08-20 | 2014-03-12 | 北大方正集团有限公司 | A real time monitoring apparatus and a method |
| CN103779161A (en) * | 2012-11-08 | 2014-05-07 | 北京中科信电子装备有限公司 | Broadband beam scanning method for uniform ion implantation |
| CN103794447A (en) * | 2013-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Ion beam collection system and ion beam collection method |
| CN104332377A (en) * | 2014-09-10 | 2015-02-04 | 中国电子科技集团公司第四十八研究所 | Beam and dosage measurement and control apparatus of ion implantation machine, and dosage control method |
| CN105023822A (en) * | 2014-04-25 | 2015-11-04 | 斯伊恩股份有限公司 | Ion implantation method and ion implantation apparatus |
| CN112635280A (en) * | 2020-12-12 | 2021-04-09 | 北京烁科中科信电子装备有限公司 | Ion implanter beam current and dose measurement and control device and method |
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| CN1851867A (en) * | 2005-04-22 | 2006-10-25 | 北京中科信电子装备有限公司 | Ion injection uniformity control system and control method |
| CN101000870A (en) * | 2006-01-13 | 2007-07-18 | 北京中科信电子装备有限公司 | Method and device for controlling ion implantation |
| CN101764030A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | System and method for controlling ion implantation dosage |
| CN101764029A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | Method and device for accurately detecting and correcting parallelism of ion beam |
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Patent Citations (4)
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| CN1851867A (en) * | 2005-04-22 | 2006-10-25 | 北京中科信电子装备有限公司 | Ion injection uniformity control system and control method |
| CN101000870A (en) * | 2006-01-13 | 2007-07-18 | 北京中科信电子装备有限公司 | Method and device for controlling ion implantation |
| CN101764030A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | System and method for controlling ion implantation dosage |
| CN101764029A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | Method and device for accurately detecting and correcting parallelism of ion beam |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295864A (en) * | 2012-03-02 | 2013-09-11 | 无锡华润上华科技有限公司 | Ion beam concentration detection method and ion beam detection system |
| CN103295864B (en) * | 2012-03-02 | 2016-03-09 | 无锡华润上华科技有限公司 | The detection method of ion bears concentration and ion beam detection system |
| CN103632993A (en) * | 2012-08-20 | 2014-03-12 | 北大方正集团有限公司 | A real time monitoring apparatus and a method |
| CN103632993B (en) * | 2012-08-20 | 2017-12-08 | 北大方正集团有限公司 | A kind of real time monitoring apparatus and method |
| CN103779161A (en) * | 2012-11-08 | 2014-05-07 | 北京中科信电子装备有限公司 | Broadband beam scanning method for uniform ion implantation |
| CN103794447A (en) * | 2013-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Ion beam collection system and ion beam collection method |
| CN105023822A (en) * | 2014-04-25 | 2015-11-04 | 斯伊恩股份有限公司 | Ion implantation method and ion implantation apparatus |
| CN105023822B (en) * | 2014-04-25 | 2018-04-03 | 斯伊恩股份有限公司 | Ion injection method and ion implantation apparatus |
| CN104332377A (en) * | 2014-09-10 | 2015-02-04 | 中国电子科技集团公司第四十八研究所 | Beam and dosage measurement and control apparatus of ion implantation machine, and dosage control method |
| CN104332377B (en) * | 2014-09-10 | 2016-08-17 | 中国电子科技集团公司第四十八研究所 | A kind of ion implantation apparatus line and dosage measure and control device and dosage control method |
| CN112635280A (en) * | 2020-12-12 | 2021-04-09 | 北京烁科中科信电子装备有限公司 | Ion implanter beam current and dose measurement and control device and method |
| CN112635280B (en) * | 2020-12-12 | 2024-02-23 | 北京烁科中科信电子装备有限公司 | Beam and dose measurement and control device and method for ion implanter |
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Application publication date: 20120208 |