CN1862766A - Method for measuring parallel beam injection angle - Google Patents
Method for measuring parallel beam injection angle Download PDFInfo
- Publication number
- CN1862766A CN1862766A CN 200610072964 CN200610072964A CN1862766A CN 1862766 A CN1862766 A CN 1862766A CN 200610072964 CN200610072964 CN 200610072964 CN 200610072964 A CN200610072964 A CN 200610072964A CN 1862766 A CN1862766 A CN 1862766A
- Authority
- CN
- China
- Prior art keywords
- faraday
- bundle
- parallel beam
- measuring
- injection angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Measurement Of Radiation (AREA)
Abstract
This invention discloses parallel beam injection angle measuring method. Moving faraday and beam faraday are used. The procedures are that (1) the moving faraday method is used to shelter ion beam to make the beam faraday method forming corresponding current curve graph. (2) parallel beam injection angle is computed by formula theta=arctg((X1'+X2')/2-X0)/(H-h/2), X1', X2'are 50 percent two points position of beam measuring cup current peak value, X0 is midpoint position of the cup, h is moving faraday height, H is distant between the moving faraday and beam faraday. This invention is simple and practical, its operation is easy and measuring is accurate.
Description
Technical field
The present invention relates to a kind of semiconductor device production control method of measurement, relate in particular to a kind of method for measuring parallel beam injection angle.
Background technology
In the existing semiconductor integrated circuit manufacturing technology, development along with the semiconductor integrated circuit technology, integrated level is more and more higher, the wafer size of foundry is increasing, from 6 inches to 8 inches, even 12 inches, the unit component size is more and more littler in the circuit, and the automation of each semiconductor manufacturing equipment is had higher requirement.
Ion implantor is as one of key equipment of semiconductor ion doping processing line, also have higher requirement, when the wafer size of foundry arrives 8 inches or 12 inches, the requirement ion implantor has: multiple function and features such as angle favourable identity that whole aircraft reliability is good, accurately control Shu Pinzhi, low grit pollutes, injects line, when particularly ion beam arrives crystal column surface, in different position, surface, brilliant garden, the bundle spot all requires to inject with same angle.Therefore, the measuring parallel beam injection angle technology is one of technology the most key in the angled ion implanter equipment.
Summary of the invention
The present invention be directed to and accurately measure relatively situation of difficult of parallel beam implant angle in the prior art, propose a kind of new method of measurement, this method is simple and practical, measures accurately.
The present invention is achieved through the following technical solutions: a kind of method for measuring parallel beam injection angle, and use mobile faraday, surveyed bundle faraday, measuring process is:
(1) blocks ion beam by mobile faraday, make survey bundle faraday form corresponding current curve diagram;
(2) calculate parallel beam implant angle θ ≈ arctg ((X1 '+X2 ')/2-X0)/(H-h/2) according to formula,
Wherein X1 ', X2 ' are for surveying 50% two position of bundle cup current peak, and X0 is for surveying the position of bundle cup mid point, and mobile faraday highly is h, and mobile faraday's inlet and the distance of surveying between the bundle faraday inlet are H.
The present invention has following remarkable advantage:
1. method is simple, practical, easy operating.
2. measure accurately.
Description of drawings
Fig. 1 is a schematic diagram of the present invention.
Fig. 2 is a survey bundle faradic currents curve chart of the present invention.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail:
As shown in Figure 1, after ion beam is swept out through scanning power supply, after coming out, parallel beam lens and accelerating field be injected into the wafer, at wafer position one or more are set and survey bundle faraday 2, with from left to right moving of mobile faraday 1, can measure the parallel beam implant angle of bundle faraday position according to the angle measurement of parallel beam formula.
The angle measurement of parallel beam formula:
As shown in Figure 1, mobile faraday 1 from left to right moves, and when mobile faraday 1 moved to position X1, the line of surveying bundle faraday 2 measurements began to reduce, and when mobile faraday 1 moved to position X2, the line that survey bundle faraday 2 measures returned to maximum.X0 is for surveying the position of restrainting the cup mid point, the crossing position of ion beam centerline and mobile faraday 1 upper edge that X3 sends for surveying bundle faraday 2.If mobile faraday's 1 width is W1, highly be h, the width of surveying bundle faraday 2 is W2, mobile faraday 1 and the distance of surveying between the bundle faraday 2 are H.
X3-X1=W1/2+h*tgθ+W2/2..............................(1)
X2-X3=W2/2+W1/2.....................................(2)
X3-X0=H*tgθ........................................(3)
Get by (2)-(1):
2*X3-(X2+X1)=h*tgθ.................................(4)
Get by (3) and (4):
tgθ=((X1+X2)/2-X0)/(H-h/2).........................(5)
The parallel beam angle is:
θ=arctg((X1+X2)/2-X0)/(H-h/2)......................(6)
Control mobile faraday and from left to right move,, calculate X1 ' and X2 ' 2 points according to diagram from surveying bundle faraday acquisition current curve diagram as shown in Figure 2.As seen from the figure
(X1’+X2’)/2≈(X1+X2)/2.............................(7)
(7) substitution formula (6) can be calculated the parallel beam angle.
Specific embodiment of the present invention elaborates summary of the invention.For persons skilled in the art, any conspicuous change of under the prerequisite that does not deviate from the principle of the invention it being done all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities.
Claims (1)
1. a method for measuring parallel beam injection angle has used mobile faraday, has surveyed bundle faraday, and measuring process is:
(1) blocks ion beam by mobile faraday, make survey bundle faraday form current curve diagram;
(2) calculate parallel beam implant angle θ ≈ arctg ((X1 '+X2 ')/2-X0)/(H-h/2) according to formula,
Wherein X1 ', X2 ' are for surveying 50% two position of bundle cup current peak, and X0 is for surveying the position of bundle cup mid point, and mobile faraday highly is h, and mobile faraday's inlet and the distance of surveying between the bundle faraday inlet are H.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100729642A CN100378915C (en) | 2006-04-07 | 2006-04-07 | Method for measuring parallel beam injection angle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100729642A CN100378915C (en) | 2006-04-07 | 2006-04-07 | Method for measuring parallel beam injection angle |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1862766A true CN1862766A (en) | 2006-11-15 |
CN100378915C CN100378915C (en) | 2008-04-02 |
Family
ID=37390149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100729642A Active CN100378915C (en) | 2006-04-07 | 2006-04-07 | Method for measuring parallel beam injection angle |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100378915C (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101414545B (en) * | 2007-10-17 | 2010-10-13 | 北京中科信电子装备有限公司 | Faraday apparatus for angle measurement of parallel beam |
CN106324654A (en) * | 2015-06-18 | 2017-01-11 | 中芯国际集成电路制造(上海)有限公司 | Measurement method of ion implantation |
CN108010827A (en) * | 2016-11-02 | 2018-05-08 | 北京中科信电子装备有限公司 | A kind of method for detecting line angle |
CN108931808A (en) * | 2017-05-26 | 2018-12-04 | 北京中科信电子装备有限公司 | A kind of follow-on ion beam vertical angle measurement method |
CN110416045A (en) * | 2019-08-07 | 2019-11-05 | 德淮半导体有限公司 | The measurement method of Faraday cup component and its ion beam mutation angle, device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970052183A (en) * | 1995-12-30 | 1997-07-29 | 김주용 | Ion implanter with adjustable ion beam angle |
US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
US6437350B1 (en) * | 2000-08-28 | 2002-08-20 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting beam parallelism in ion implanters |
DE10329383B4 (en) * | 2003-06-30 | 2006-07-27 | Advanced Micro Devices, Inc., Sunnyvale | Ion beam detector for ion implantation systems, Faraday containers therefor and methods for controlling the properties of an ion beam using the ion beam detector |
KR100594272B1 (en) * | 2004-05-07 | 2006-06-30 | 삼성전자주식회사 | Movable inclination angle measuring apparatus for ion beam and measuring method using the apparatus |
-
2006
- 2006-04-07 CN CNB2006100729642A patent/CN100378915C/en active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101414545B (en) * | 2007-10-17 | 2010-10-13 | 北京中科信电子装备有限公司 | Faraday apparatus for angle measurement of parallel beam |
CN106324654A (en) * | 2015-06-18 | 2017-01-11 | 中芯国际集成电路制造(上海)有限公司 | Measurement method of ion implantation |
CN106324654B (en) * | 2015-06-18 | 2019-04-09 | 中芯国际集成电路制造(上海)有限公司 | The measurement method of ion implanting |
CN108010827A (en) * | 2016-11-02 | 2018-05-08 | 北京中科信电子装备有限公司 | A kind of method for detecting line angle |
CN108010827B (en) * | 2016-11-02 | 2021-08-27 | 北京中科信电子装备有限公司 | Method for detecting beam angle |
CN108931808A (en) * | 2017-05-26 | 2018-12-04 | 北京中科信电子装备有限公司 | A kind of follow-on ion beam vertical angle measurement method |
CN108931808B (en) * | 2017-05-26 | 2020-11-06 | 北京中科信电子装备有限公司 | Improved ion beam vertical angle measuring method |
CN110416045A (en) * | 2019-08-07 | 2019-11-05 | 德淮半导体有限公司 | The measurement method of Faraday cup component and its ion beam mutation angle, device |
Also Published As
Publication number | Publication date |
---|---|
CN100378915C (en) | 2008-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1862766A (en) | Method for measuring parallel beam injection angle | |
CN102798827B (en) | Magnet measuring device and magnet measuring method | |
CN109253693B (en) | Elongate structure detection device | |
EP2555014A1 (en) | Method for detecting and evaluating a plane | |
CN108569041A (en) | Droplet discharge apparatus, drop discharge method and computer storage media | |
CN101606216A (en) | Have scanning electron microscope and the specimen size of surveying long function and survey rectangular method | |
CN1714943A (en) | Apparatus and method for applying adhesive to a substrate | |
CN204230207U (en) | Ion implantation angle measurement mechanism and ion implant systems | |
CN103219217A (en) | Faraday system for ion implanter target chamber and method for detecting ion beam current quality | |
CN104330030A (en) | Fixed type automotive integral size and shape initiative vision measuring system | |
WO2023197597A1 (en) | Automation apparatus for verifying accuracy of pendulum system, and method | |
CN103383913A (en) | Ion beam dimension control for ion implantation process and apparatus, and advanced process control | |
CN2796083Y (en) | Scanning generator | |
CN103779161B (en) | Broadband beam scanning method for uniform ion implantation | |
CN104576275A (en) | Uniformity correction control system for ion implanter | |
CN105783710A (en) | Position calibrating method and position calibrating device | |
CN109116274B (en) | Four-degree-of-freedom magnetic field testing device | |
US20180194056A1 (en) | Print bed levelling system and methods for additive manufacturing | |
CN103794452B (en) | System for accurately controlling ion implantation distribution uniformity | |
CN1727871A (en) | Method of operating a probe microscope | |
CN206695770U (en) | A kind of Large Precast Members surface defects detection and indication device | |
CN112558046B (en) | Offline acceptance check method with multi-line laser radar intelligent equipment | |
CN104507259A (en) | Positioning and clamping device for PCB (Printed Circuit Board) labelling machine | |
CN103042311A (en) | Control method for aligned cutting of 4-inch light-emitting diode (LED) sapphire wafer during laser processing | |
WO2022012815A1 (en) | Method and device for testing printed circuit boards |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220725 Address after: 101111 1st floor, building 1, 6 Xingguang 2nd Street, Tongzhou District, Beijing Patentee after: Beijing Scintillation Section Zhongkexin Electronic Equipment Co.,Ltd. Address before: 100036, Fuxing Road, Beijing, Haidian District No. 20 Huitong business building, north gate, No. 44, building 2, eastern section Patentee before: BEIJING ZHONGKEXIN ELECTRONICS EQUIPMENT Co.,Ltd. |