CN103794452B - System for accurately controlling ion implantation distribution uniformity - Google Patents
System for accurately controlling ion implantation distribution uniformity Download PDFInfo
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- CN103794452B CN103794452B CN201210442577.9A CN201210442577A CN103794452B CN 103794452 B CN103794452 B CN 103794452B CN 201210442577 A CN201210442577 A CN 201210442577A CN 103794452 B CN103794452 B CN 103794452B
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Abstract
The invention discloses a system for accurately controlling ion implantation distribution uniformity, relates to an ion implanter, and belongs to the field of semiconductor manufacturing. The method comprises high-precision multi-channel I/V acquisition and conversion, detection and correction of beam distribution density in the horizontal direction, beam parallelism detection and a vertical scanning control algorithm. The system mainly comprises a multi-coil adjusting magnet, a multi-stage adjusting magnetic pole, a movable Faraday cup, a sampling Faraday cup, a linear motor and a PMAC motion control system. The invention can automatically realize the accurate detection of the dosage of the ion implantation ions and automatically realize the uniformity of the distribution of the implantation ions and the accurate control of the dosage.
Description
Technical field
The present invention relates to ion implantor uniformity control method, relate to ion implantor, belong to semiconductor equipment manufacturing field.
Background technology
Ion implantor uniformity controlling technology is one of key technology of ion implantor, its operation principle be based on various control and method of measurement and device by ion by the dose uniformity ground set, be accurately injected into whole wafer surface.But actual conditions, the broadband bundle of high uniformity like this cannot be obtained from ion source, and be subject to space charge effect effect from the line analyzing process, regulon, the many factors such as space interference, eventually pass through magnetic field for correcting and the rear broadband bundle arriving target that slows down, uniformity and the depth of parallelism of technological requirement can not be met, therefore suitable uniformity and depth of parallelism aligning gear must be designed, with basis in real work finally in beam homogeneity and the depth of parallelism parameter of the position finding of target sheet, closed-loop optimization regulates broadband bundle relevant parameter, final acquisition meets uniformity and the depth of parallelism index of technological requirement.
The invention provides the ion implantor uniformity control method that a kind of mechanical scanning combines with electric scanning, this control method architecture is simple, and Measurement & Control accurately, reliably.
Summary of the invention
The present invention relates to a kind of system for accurately controlling ion implantation distribution uniformity.
A kind of system for accurately controlling ion implantation distribution uniformity: comprise high-precision multi-path I/V Collect conversion, horizontal direction bundle distribution density detection and correction, restraint Parallel testing, vertical scanning control algolithm.
The present invention is achieved through the following technical solutions:
A kind of system for accurately controlling ion implantation distribution uniformity comprises: multi-coil regulating magnet, multistage adjustment magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system; Mobile Faraday cup is connected with PMAC kinetic control system by coaxial cable with sampling Faraday cup.Wherein sampling Faraday cup for gathering line value, coordinating multi-coil regulating magnet and multistage adjustment magnetic pole completes the depth of parallelism and uniformity detects; Mobile Faraday cup to be gone forward side by side the depth of parallelism of line width band bundle and horizontal direction homogeneity correction for gathering line value.
A kind of system for accurately controlling ion implantation distribution uniformity, it is characterized in that: the multi-coil regulating magnet being arranged on wide beam parallel lens entrance and the multistage adjustment magnetic pole being arranged on the outlet of wide beam parallel lens coordinate, and regulate uniformity and the depth of parallelism of broadband bundle.Wherein multi-coil regulating magnet is by regulating the current status often organizing coil, changes the Distribution of Magnetic Field of line by region, and then changes line by the angular distribution after control band; Multistage adjustment magnetic pole regulates the upright position of each magnetic pole by each motor, change the pole span between symmetric poles, regulates the magnetic field intensity of local, the final depth of parallelism parameter changing the deflection angle through the ion beam in this region and restraint to regulate broadband.
For accurately controlling a system for ion implantation distribution uniformity, it is characterized in that: linear electric motors are motion parts execution units.After controlling line collection calculating, control break linear electric motors are motion vertical sweep speed up and down, to reach the uniformity of vertical direction.
For accurately controlling a system for ion implantation distribution uniformity, it is characterized in that: PMAC motion controller carries out line Collect conversion and completes core algorithm process, controlling actuator and completing homogeneity correction.
The present invention has following remarkable advantage:
1. structure is simple: be only made up of the part such as multi-coil regulating magnet, multistage adjustment magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system.
2. reliable in function: be made up of multi-coil regulating magnet, multistage adjustment magnetic pole, mobile Faraday cup and sampling Faraday cup, jointly regulate to ensure the uniformity that broadband is restrainted and the depth of parallelism.
3. be easy to control: sampling Faraday cup is for gathering line value, and change the Distribution of Magnetic Field of line by region by regulating multi-coil regulating magnet and multistage adjustment magnetic pole, regulate the magnetic field intensity of local, the final depth of parallelism parameter changing the deflection angle through the ion beam in this region and restraint to regulate broadband.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the invention will be described further, but not as the restriction to patent of the present invention.
Fig. 1 is ion implantation distribution uniformity system architecture figure.
Fig. 2 injects flow chart
In Fig. 1, ion implantation dosage control system comprises multi-coil regulating magnet, multistage adjustment magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system.
Embodiment
Be further introduced below in conjunction with accompanying drawing 1 and accompanying drawing 2 couples of the present invention, but not as a limitation of the invention.
As shown in Figure 1, a kind of system of accurate control ion implantation distribution uniformity: relate to high-precision multi-path I/V Collect conversion, horizontal direction bundle distribution density detection and correction, restraint Parallel testing, vertical scanning control algolithm; System is formed primarily of multi-coil regulating magnet, multistage adjustment magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system.
The broadband Shu Jing drawn is arranged on the multi-coil regulating magnet of wide beam parallel lens entrance and is arranged on the cooperation adjustment of the multistage adjustment magnetic pole that wide beam parallel lens exports, in order to ensure the uniformity that broadband is restrainted and the depth of parallelism.Wherein multi-coil regulating magnet is by regulating the current status often organizing coil, changes the Distribution of Magnetic Field of line by region, and then changes line by the angular distribution after control band; Multistage adjustment magnetic pole regulates the upright position of each magnetic pole by each motor, change the pole span between symmetric poles, regulates the magnetic field intensity of local, the final depth of parallelism parameter changing the deflection angle through the ion beam in this region and restraint to regulate broadband.Mobile Faraday cup is connected with PMAC kinetic control system by coaxial cable with sampling Faraday cup, and Faraday cup of wherein sampling is for gathering line value, and this value is for detecting the uniformity of broadband bundle; Mobile Faraday cup to be gone forward side by side the depth of parallelism of line width band bundle and horizontal direction homogeneity correction for gathering line value.When broadband bundle is undesirably worth, multi-coil regulating magnet can be regulated one by one often to organize upright position that the current status of coil and each motor of multistage adjustment magnetic pole regulate each magnetic pole, regulate the magnetic field intensity of local, coordinate multi-coil regulating magnet and multistage adjustment magnetic pole to complete the depth of parallelism and uniformity and detects the also final depth of parallelism parameter changing the deflection angle through the ion beam in this region and restraint to regulate broadband.Uniformity regulates formerly, and the depth of parallelism regulates rear.
After controlling line collection calculating, control break linear electric motors are motion vertical sweep speed up and down, to reach the uniformity of vertical direction.PMAC motion controller carries out line Collect conversion and completes core algorithm process, controls actuator and completes homogeneity correction.
Injection flow chart as shown in Figure 2, meets the broadband bundle of the depth of parallelism and uniformity requirement, calculates single sweep operation dosage, draw expectation scanning times in conjunction with menu dosage after calibration; Next line journey sweep speed is calculated by one-stroke actual scanning dosemeter; At the end of injection, the magnitude relationship regulated with setting limit velocity by doses remaining, determines final compensation relationship.
The specific embodiment of patent of the present invention elaborates the content of patent of the present invention.For persons skilled in the art, to any apparent change that it does under the prerequisite not deviating from patent spirit of the present invention, all form the infringement to patent of the present invention, corresponding legal liabilities will be born.
Claims (4)
1. for accurately controlling a system for ion implantation distribution uniformity, comprising: multi-coil regulating magnet, multistage adjustment magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system;
Mobile Faraday cup is connected with PMAC kinetic control system by coaxial cable with sampling Faraday cup, Faraday cup of wherein sampling for gathering line value, cooperation multi-coil regulating magnet and multistage adjustment magnetic pole completes the depth of parallelism and uniformity detects; Mobile Faraday cup to be gone forward side by side the depth of parallelism of line width band bundle and horizontal direction homogeneity correction for gathering line value.
2. a kind of system for accurately controlling ion implantation distribution uniformity as claimed in claim 1, it is characterized in that: the multi-coil regulating magnet being arranged on wide beam parallel lens entrance and the multistage adjustment magnetic pole being arranged on the outlet of wide beam parallel lens coordinate, regulate uniformity and the depth of parallelism in broadband, wherein multi-coil regulating magnet is by regulating the current status often organizing coil, change the Distribution of Magnetic Field of line by region, and then change line by the angular distribution after control band; Multistage adjustment magnetic pole regulates the upright position of each magnetic pole by each motor, change the pole span between symmetric poles, regulates the magnetic field intensity of local, the final depth of parallelism parameter changing the deflection angle through the ion beam of described control band and restraint to regulate broadband.
3. a kind of system for accurately controlling ion implantation distribution uniformity as claimed in claim 1, it is characterized in that: linear electric motors are motion parts execution units, after controlling line collection calculating, control break linear electric motors are motion vertical sweep speed up and down, to reach the uniformity of vertical direction.
4. a kind of system for accurately controlling ion implantation distribution uniformity as claimed in claim 1, is characterized in that: PMAC kinetic control system carries out line Collect conversion and completes core algorithm process, controls actuator and completes homogeneity correction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210442577.9A CN103794452B (en) | 2012-11-08 | 2012-11-08 | System for accurately controlling ion implantation distribution uniformity |
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| CN201210442577.9A CN103794452B (en) | 2012-11-08 | 2012-11-08 | System for accurately controlling ion implantation distribution uniformity |
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| CN103794452A CN103794452A (en) | 2014-05-14 |
| CN103794452B true CN103794452B (en) | 2016-03-02 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097400B (en) * | 2015-08-03 | 2017-10-17 | 京东方科技集团股份有限公司 | Ion implant systems and method |
| CN110718434B (en) * | 2018-07-11 | 2022-04-29 | 北京中科信电子装备有限公司 | Multi-coil current control uniformity adjusting method |
| CN111769039B (en) * | 2019-04-02 | 2023-07-04 | 北京中科信电子装备有限公司 | Method for adjusting uniformity of low-energy large-beam ion implanter |
| CN111769026B (en) * | 2019-04-02 | 2024-03-12 | 北京中科信电子装备有限公司 | Beam property measuring device and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
| JP2006140053A (en) * | 2004-11-12 | 2006-06-01 | Ulvac Japan Ltd | Ion implantation apparatus |
| CN2906907Y (en) * | 2005-12-05 | 2007-05-30 | 北京中科信电子装备有限公司 | Non-uniform magnetic field edge characteristic corrector for ion implantation machine |
| CN101764029A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | Method and device for accurately detecting and correcting parallelism of ion beam |
| CN102543642A (en) * | 2010-12-27 | 2012-07-04 | 北京中科信电子装备有限公司 | Two-dimensional scanning synchronization method for controlling uniform injection of ions |
-
2012
- 2012-11-08 CN CN201210442577.9A patent/CN103794452B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
| JP2006140053A (en) * | 2004-11-12 | 2006-06-01 | Ulvac Japan Ltd | Ion implantation apparatus |
| CN2906907Y (en) * | 2005-12-05 | 2007-05-30 | 北京中科信电子装备有限公司 | Non-uniform magnetic field edge characteristic corrector for ion implantation machine |
| CN101764029A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | Method and device for accurately detecting and correcting parallelism of ion beam |
| CN102543642A (en) * | 2010-12-27 | 2012-07-04 | 北京中科信电子装备有限公司 | Two-dimensional scanning synchronization method for controlling uniform injection of ions |
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Effective date of registration: 20220505 Address after: 101111 1st floor, building 1, 6 Xingguang 2nd Street, Tongzhou District, Beijing Patentee after: Beijing Scintillation Section Zhongkexin Electronic Equipment Co.,Ltd. Address before: No.6, Xingguang 2nd Street, optical Mechatronics industrial base, Tongzhou District, Beijing Patentee before: BEIJING ZHONGKEXIN ELECTRONICS EQUIPMENT Co.,Ltd. |