CN111769039B - Method for adjusting uniformity of low-energy large-beam ion implanter - Google Patents
Method for adjusting uniformity of low-energy large-beam ion implanter Download PDFInfo
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- CN111769039B CN111769039B CN201910258889.6A CN201910258889A CN111769039B CN 111769039 B CN111769039 B CN 111769039B CN 201910258889 A CN201910258889 A CN 201910258889A CN 111769039 B CN111769039 B CN 111769039B
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000002347 injection Methods 0.000 claims abstract 3
- 239000007924 injection Substances 0.000 claims abstract 3
- 238000005070 sampling Methods 0.000 claims description 10
- 238000010998 test method Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims 3
- 150000002500 ions Chemical class 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention belongs to the field of semiconductor chip manufacturing, and particularly relates to an automatic uniformity adjusting method in a process of implanting ions into a silicon wafer by a low-energy large-beam ion implanter. A method for adjusting uniformity of a low-energy large beam current ion implanter comprises the following steps: a method (1) for adjusting a coil group and a method (2) for adjusting a magnetic pole group. The method is characterized in that firstly, the magnetic field distribution environment of the machine is changed by adjusting the current values of a plurality of specific energizing coils of the low-energy large-beam machine and then adjusting the magnetic spacing values of a plurality of magnetic poles, so that ion beams are uniformly injected to the surface of a silicon wafer. The beneficial effects are as follows: the method can replace manual operation of adjusting the coil assembly and the magnetic pole assembly by experience, save time for adjusting uniformity indexes, and improve the accuracy and stability of wafer injection dosage.
Description
Technical Field
The invention belongs to the field of semiconductor chip manufacturing, and particularly relates to an automatic uniformity adjusting method in a process of implanting ions into a silicon wafer by a low-energy large-beam ion implanter.
Background
The semiconductor chip is widely applied to clothing and eating activities of people, the performance requirements of various industries on the semiconductor chip are gradually improved, the semiconductor chip is used as an important link for producing the semiconductor chip, the low-energy large-beam ion implanter plays a key role in large-size wafer implantation, and uniformity and repeatability as important indexes in the ion implantation process are paid attention to. When the beam is injected into the silicon wafer through the low-energy large-beam ion implanter, the beam sequentially passes through two important hardware of the coil group and the magnetic pole group, and the adjustment of the two hardware is a key for reducing the uniformity index. Because the number of the magnetic poles and the coils in the coil groups and the magnetic pole groups to be adjusted is large, manual adjustment is time-consuming and has a plurality of limitations by experience, and therefore the adjustment method for automatically adjusting the uniformity index of the low-energy large-beam ion implanter is important.
The coil group is in front, the magnetic pole group is in back, and when the beam current generated by the front-end ion source is stable and relatively small in uniformity, the uniformity can be reduced to the index required by a customer only by adjusting the magnetic pole group. The adjustment of the magnetic pole group mainly depends on adjusting the distance between each pair of magnetic poles, but the adjustment range of the magnetic pole distance in the equipment is limited, and the final uniformity index cannot be ensured, so that the coil group in front of the magnetic pole group is adjusted first to lower the uniformity index, the uniformity index is corrected only by adjusting the stimulation group and selecting 3 groups of magnetic poles as model solving parameters in the adjustment process, although the uniformity index can be reduced to a certain extent, the uniformity index is reduced to 0.5% or even lower by ensuring the uniformity index to be uniform for the mass production of semiconductor chips, and the method has certain limitation.
The above-mentioned methods for adjusting the uniformity of low-energy large beam have some limitations:
1. the traditional method for adjusting uniformity by experience of operators is low in speed and precision.
2. The method of only adjusting the magnetic pole groups to reduce uniformity is not beneficial to further upgrading of the machine performance.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a more reliable adjusting method. The coil group and the magnetic pole group in the low-energy large-beam machine can be adjusted, so that the uniformity index is reduced, and the technical breakthrough is realized.
In the research process, the current of the coil assembly is influenced by the hardware of the machine, and the current of the coil assembly influences all sampling points in the adjusting range; the adjustment of the magnetic spacing of the poles affects only the extent of the individual poles and their corresponding portions. The present disclosure is directed to this feature.
The specific method steps shown in fig. 2 are as follows:
1) Initializing the coil set and the magnetic pole set.
2) Collecting beam section flow intensity and obtaining flow intensity average value J 0 。
3) The single coil successively passes through the same current I to establish current change and current intensity change delta J p Relationship.
4) And combining the coil set regulation limit, and solving by a computer to obtain a set of current regulation solutions.
5) And inputting the coil adjustment values into the machine.
6) Judging whether the expected uniformity is reached, if not, continuing to repeat the coil group adjustment from 3) to 6), and if so, entering the adjustment of the magnetic pole group.
7) Initializing the magnetic pole group.
8) Collecting beam section flow intensity and obtaining flow intensity average value J 1 。
9) And each magnetic pole sequentially adjusts the same distance d to establish the relationship between the magnetic spacing change and the flow intensity change delta Jr.
10 Combining with the regulation limit of the magnetic pole group, and solving by a computer to obtain a group of magnetic pole regulation solutions
11 Inputting magnetic pole adjusting value into the machine
12 Judging whether the expected uniformity is reached, if not, continuing to repeat the magnetic pole group adjustment from 9) to 12), and if so, ending.
The invention has the following remarkable advantages:
1. the method has high operation speed and high accuracy, and can realize dynamic adjustment.
2. The test method has important significance for improving the overall performance of the semiconductor chip and improving the yield.
Drawings
Fig. 1 is a schematic diagram of low energy large beam ion implantation modulation.
In the figure, an analysis diaphragm, a 2-coil set, a 3-parallel lens and a 4-magnetic pole set are shown in the figure
FIG. 2 is a diagram illustrating a test method
The present invention is not limited to the above embodiments, and any person who makes the technical solution with the same or similar to the present invention in the light of the present invention should be known to fall within the scope of the present invention.
The technology, shape, and structural parts of the present invention, which are not described in detail, are known in the art.
Detailed Description
The invention is further described below with reference to the accompanying drawings. As shown in fig. 1, when the low-energy large-beam ion implanter is used for implantation, the beam sequentially passes through the analysis diaphragm (1), the coil assembly (2) and the parallel lens (3) and finally passes through the magnetic pole assembly (4) to be beaten to the surface of the silicon wafer, and in the process, the controllable device capable of reducing the uniformity index is provided with the coil assembly (2) and the magnetic pole assembly (4).
A method for uniformity adjustment of a low energy large beam ion implanter as shown in fig. 2 comprises: a method (1) for adjusting a coil group and a method (2) for adjusting a magnetic pole group. The invention improves the uniformity index by adjusting the two devices. The method is realized by the following technical scheme:
1) All coils are not energized and all poles are brought to the initial position (3).
2) The silicon wafer size to be ion implanted is determined to be, for example, about 25.4cm at 10inch, and the range to be adjusted, i.e., the cross-sectional width of the beam, is greater than 10inch. Assuming that the wafer center is the origin of coordinates, the beam width required to be adjusted is (-x, x), then 2x > 10inch. The beam current range to be regulated is that m sampling points are set in the Faraday regulation range (-x, x) to obtain the relation between each sampling point and the corresponding position current intensity Jp, and the initial current intensity mean value J is obtained 0 (4) This flow intensity average value J 0 The target value of all the acquisition points of the coil assembly is regulated, and the beam current average value needs to be acquired again as a new target value after the cycle is started.
3) Average value J of current intensity and initial current intensity of each sampling point when current I is applied to each coil and current is not applied to other coils 0 The difference is made to obtain the current change and the current intensity change delta J of the sampling position in the adjusting range (-x, x) of each group of coils p The n sets of coils have n sets of varying relationships (5).
4) By combining with the hardware regulation limit of a machine, an overdetermined equation set (the number n of the coils is limited, in principle, the more m values are, the more accurate the result is, so m is far greater than n), a set of current regulation solutions for regulating each coil is obtained, and after the circulation is started, the parameters of the equation set can be solved for the first time to speed up the regulation rate (6).
5) The coil adjustment values are input to a machine (7).
6) Judging whether the expected uniformity is reached, if the expected uniformity is not reached, repeating the steps 2) to 6), and if the expected uniformity is reached, continuing the step (8).
7) The coil adjustment result is maintained and all poles are brought to the initial position (9).
8) The same magnetic pole group adjusting range is (-x, x), the same number and positions of sampling points are adopted, thus being beneficial to reducing the hardware construction cost and saving the adjusting time, setting m sampling points in the required moving Faraday adjusting range (-x, x) to obtain the relation between each sampling point and the corresponding position flow intensity Jr, and obtaining the initial flow intensity mean valueJ 1 (10) This flow intensity average value J 1 And the target value of the adjustment of all the magnetic pole group acquisition points is obtained. After entering the cycle, the beam current average value needs to be acquired again to be used as a new round of target value.
9) The magnetic pole components are an upper magnetic pole and a lower magnetic pole, and when the position of the upper magnetic pole is adjusted, the position of the lower magnetic pole is kept unchanged, and vice versa. The data acquisition follows the following rules: the first pole is adjusted by a distance d and the rest positions are kept unchanged to collect a set of data. The second pole is tested while maintaining the first pole adjustment d, the second pole is moved d, and the rest positions are maintained unchanged to test a set of data. The first two poles are held adjusted d when the third pole is tested, a set of data is tested when the third pole is moved d. The 1-group of flow intensity values J are obtained after the k-1 magnetic pole moves by the distance d rk-1 . The kth magnetic pole is kept unchanged, and 1 group of flow intensity values J are measured after the kth magnetic pole moves by a distance d rk ，ΔJ r ＝J rk -J rk-1 Thus, the current change and the current intensity change delta J of the sampling position in the k-th magnetic pole adjusting range (-x, x) are obtained r The k poles have k sets of changing relationships (11).
10 Combining with the hardware regulation limit of the machine, solving by a computer to obtain a group of magnetic pole regulation magnetic spacing regulation solutions, and firstly solving equation set parameters to accelerate the regulation rate (12) after the hardware environment is the same and enters the circulation.
11 Inputting each magnetic pole adjusting value into the machine (13).
12 Determining whether the desired uniformity is achieved, repeating 8) to 12) if the desired uniformity is not achieved, and ending (14) if the desired uniformity is achieved.
Claims (10)
1. A method for adjusting uniformity of a low-energy large-beam ion implanter comprises a method for adjusting a coil set and a method for adjusting a magnetic pole set, and is characterized in that a test method is respectively described for the coil set and the magnetic pole set by combining physical characteristics of the coil set and the magnetic pole set of a large-beam ion implanter and hardware conditions of equipment, and the coil set is adjusted before the magnetic pole set is adjusted in the test process;
the method for adjusting the coil assembly comprises the following steps:
1) Initializing a coil group and a magnetic pole group;
2) Collecting the flow intensity of the flow section of the beam and obtaining a flow intensity average value J0;
3) The single coil successively passes through the same current I, and a relation between current change and current intensity change delta Jp is established;
4) Combining the coil group regulation limitation, and solving by a computer to obtain a group of current regulation solutions;
5) Inputting the adjustment values of the coils into a machine;
6) Judging whether the expected uniformity is reached, if not, continuing to repeat the coil group adjustment from 3) to 5), and if so, entering the adjustment of the magnetic pole group;
the adjusting method of the magnetic pole group comprises the following steps:
1) Initializing a magnetic pole group;
2) Collecting the flow intensity of the flow section of the beam and obtaining a flow intensity average value J1;
3) Each magnetic pole sequentially adjusts the same distance d in sequence, and establishes a relationship between magnetic spacing change and flow intensity change delta Jr;
4) Combining the magnetic pole group regulation limit, and solving by a computer to obtain a group of magnetic pole regulation solutions;
5) Inputting the magnetic pole adjusting value into the machine;
6) Judging whether the expected uniformity is reached, if not, continuing to repeat the magnetic pole group adjustment from 3) to 5), and if so, ending.
2. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: all the acquired flow intensities are based on the beam direction of the central part of the injection beam, and the beam cross section perpendicular to the injection direction is acquired.
3. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: the adjustment of the coil group firstly initializes all coils and magnetic poles, namely the coils are not electrified, the magnetic poles are placed at initial positions, the flow intensity of each sampling point and the corresponding position is collected, and the average flow intensity J0 at the moment is obtained.
4. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: the acquisition method that the single coil sequentially passes through the same current refers to that when one coil is electrified, the other coils are not electrified to acquire a group of data.
5. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: the initialization of the magnetic pole group during the adjustment of the magnetic pole group means to keep the coil group energized according to the obtained optimal solution and the magnetic pole group is placed at the initial position.
6. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: the acquisition method for sequentially adjusting the same distance d of each magnetic pole sequentially comprises the steps of adjusting the distance d of a first magnetic pole, and acquiring a group of data at the rest positions unchanged; the first magnetic pole is kept adjusted d during the test of the second magnetic pole, the second magnetic pole is moved d, and the rest positions are kept unchanged to test a group of data; the first two poles are held adjusted d when the third pole is tested, a set of data is tested when the third pole is moved d.
7. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: the magnetic pole groups are arranged in pairs, each pair of magnetic poles comprises an upper magnetic pole and a lower magnetic pole, and the uniformity adjustment method of the upper magnetic pole group and the lower magnetic pole group is consistent.
8. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: the number of the energizable coils in the coil group is 7 or 9.
9. The method for adjusting the uniformity of the low-energy large-beam ion implanter according to claim 1, wherein the method comprises the following steps: the number of pole pairs can be adjusted to be 10 pairs, 12 pairs or 14 pairs.
10. The method for adjusting the uniformity of a low-energy large-beam ion implanter of claim 6, wherein the method comprises the steps of: in the collecting method that each magnetic pole sequentially adjusts the same distance d in sequence, each pair of magnetic poles needs to ensure that one magnetic pole is fixed and the other magnetic pole is moved d in the process of collecting data.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| US5435881A (en) * | 1994-03-17 | 1995-07-25 | Ogle; John S. | Apparatus for producing planar plasma using varying magnetic poles |
| CN103779161A (en) * | 2012-11-08 | 2014-05-07 | 北京中科信电子装备有限公司 | Broadband beam scanning method for uniform ion implantation |
| CN103794452A (en) * | 2012-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Method for controlling ion implantation uniform distribution |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7078714B2 (en) * | 2004-05-14 | 2006-07-18 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| US5435881A (en) * | 1994-03-17 | 1995-07-25 | Ogle; John S. | Apparatus for producing planar plasma using varying magnetic poles |
| CN103779161A (en) * | 2012-11-08 | 2014-05-07 | 北京中科信电子装备有限公司 | Broadband beam scanning method for uniform ion implantation |
| CN103794452A (en) * | 2012-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Method for controlling ion implantation uniform distribution |
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