CN101838796B - Ion implantation device and method - Google Patents
Ion implantation device and method Download PDFInfo
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- CN101838796B CN101838796B CN 200910201387 CN200910201387A CN101838796B CN 101838796 B CN101838796 B CN 101838796B CN 200910201387 CN200910201387 CN 200910201387 CN 200910201387 A CN200910201387 A CN 200910201387A CN 101838796 B CN101838796 B CN 101838796B
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Abstract
The invention discloses an ion implantation device, comprising an ion source and an extraction system, a quality analysis magnet, a correcting magnet, a speedchange turning system and a workpiece scanning system, wherein the extraction system is used for extracting ion beams from the ion source; the quality analysis magnet is used for deflecting the ion beams from the extraction system to select ion beams at a preset energy range from the ion beams; the correcting magnet is used for correcting the beam field angles of the ion beams at a preset energy range from the quality analysis magnet on a vertical plane; the speedchange turning system is used for deflecting the ion beams at a preset energy range from the correcting magnet to a preset position and direction and accelerating or decelerating the ion beams to preset implantation energy; and the workpiece scanning system is used for enabling the workpiece to pass through the ion beams at a preset energy range at a preset angle in the back-and-forth scanning process. The invention also discloses a corresponding ion implantation method. The invention can realize ion implantation with uniform and high beam current distribution and uniform angel distribution efficiently.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, particularly relate to a kind of ion implantation apparatus and method.
Background technology
Ion injection method is used for the atom that usually is referred to as impurity or molecule are introduced the target substrate, thereby changes the performance of substrate material.Ion injection method can be used for that material is carried out the surface and injects, to change its physics and chemistry performance.
Especially interesting is, mixes in monocrystalline or polysilicon with ion implantation, is a kind of common process process of making in the modern integrated circuits.Because the production of semiconductor product tends to larger semiconductor crystal wafer (from 8 inches to 12 inches, and now to 18 inches development) gradually, single-wafer technique (primary treatment one wafer) is adopted widely at present.Wafer workpiece is larger, and it is just longer to inject the required time, reaches certain implantation dose uniformity and implant angle homogeneity and also more and more is difficult to realize.
In the Ion beam application field, ion beam generally has dual mode: electric scanning and magnetic scanning.The ionic fluid that perveance is larger tends to occur the line collapse in its transmission course, the existence of any electrostatic potential in beam transmission, the capital has influence on drawing of ionic fluid and transmits, the lateral dimension of ionic fluid can sharply increase, caused before ionic fluid reaches target, with regard to the physical boundary that strikes beam transport systems and lost.Therefore, for the beam transmission of high perveance, generally do not use any electric scanner, but use magnetic scanning or non-ion beam.In the Ion beam application field, the general usefulness of magnetic scanning be dipolar magnet, be used for the moment deflected ion beam, but the focusing effect of dipolar magnet is very weak on this deflecting direction, and show as defocusing effect in the horizontal vertical dimensions of another one, so if make line keep certain dispersion angle and transmission efficiency, with regard to needs other beam optics devices are set in addition again it is focused on, to cause like this beam transfer path elongated, unfavorable to the transmission efficiency of line.
Summary of the invention
The technical problem to be solved in the present invention is in order to overcome the ion injection method of the prior art defective not high to the utilization ratio of line, provides a kind of and lower-costly can distribute by force with even and higher stream, uniform ion implantation apparatus and the method injected efficiently of angular distribution.
The present invention solves above-mentioned technical problem by following technical proposals: a kind of ion implantation apparatus, and its characteristics are that it comprises: an ion source and an extraction system, this extraction system are used for drawing ionic fluid from this ion source; One mass analyzing magmet is used for deflection from the ionic fluid of this extraction system, to select the ionic fluid in the default energy region from this ionic fluid; One magnetic compensator is used for the line subtended angle of ionic fluid in perpendicular that should preset in the energy region from this mass analyzing magmet proofreaied and correct; One speed change turning system, be used for will from this magnetic compensator should default energy region in deflected ion beam to predeterminated position and direction, and make its acceleration or deceleration to default Implantation Energy; One workpiece scanning system, be used for making workpiece with a predetermined angle shuttle-scanning by the ionic fluid in this default energy region.
Preferably, this mass analyzing magmet can be selected low energy ion beam from the ionic fluid from this extraction system, this speed change turning system can make this low energy ion beam carry out twice deflection in horizontal plane and slow down simultaneously, and this workpiece scanning system can make workpiece carry out the two-dimensional scan campaign in level and vertical direction.
Preferably, this mass analyzing magmet can be selected high energy ion beam from the ionic fluid from this extraction system, this speed change turning system can make this high energy ion beam carry out a deflection and while acceleration or deceleration in horizontal plane, and this workpiece scanning system can make workpiece carry out the two-dimensional scan campaign in level and vertical direction.
Preferably, between this extraction system and this mass analyzing magmet, be provided with one scan magnet, be used for the ionic fluid from this extraction system is scanned at vertical direction, and, this mass analyzing magmet can be selected low energy ion beam from the ionic fluid from this sweeping magnet, this speed change turning system can make this low energy ion beam carry out twice deflection in horizontal plane and slow down simultaneously, this workpiece scanning system can make workpiece carry out the motion of One-Dimensional Water simple scan, wherein, this low energy ion beam is at the line distribution range at workpiece place coating workpieces in the vertical.
Preferably, between this extraction system and this mass analyzing magmet, be provided with one scan magnet, be used for the ionic fluid from this extraction system is scanned at vertical direction, and, this mass analyzing magmet can be selected high energy ion beam from the ionic fluid from this sweeping magnet, this speed change turning system can make this high energy ion beam carry out a deflection and while acceleration or deceleration in horizontal plane, this workpiece scanning system can make workpiece carry out the motion of One-Dimensional Water simple scan, wherein, this high energy ion beam is at the line distribution range at workpiece place coating workpieces in the vertical.
Preferably, this sweeping magnet is-10 °～+ 10 ° in the scanning angle scope of vertical direction.
Preferably, this mass analyzing magmet can make 45 °～110 ° of this deflected ion beams.
Preferably, this magnetic compensator can be proofreaied and correct the line subtended angle in the perpendicular to parallel with the beam transfer path.
Preferably, planar and in abutting connection with the workpiece place be provided with a line diagnositc equipment in workpiece institute, be used for beam intensity and the angular distribution at measuring workpieces place.
Preferably, this beam diagnostics equipment can feed back to take off data one treater for this ion implantation apparatus of control.
Preferably, this beam diagnostics equipment comprises the Faraday cup with line angle measuring function, and the Faraday cup with vertical and/or horizontal direction line angle measuring function.
Another technical scheme of the present invention is: a kind of ion injection method that utilizes above-mentioned ion implantation apparatus, its characteristics are that it may further comprise the steps: S
1, utilize this extraction system to draw ionic fluid from this ion source; S
2, by this mass analyzing magmet deflection from the ionic fluid of this extraction system, from this ionic fluid, to select the ionic fluid in the default energy region; S
3, by this magnetic compensator to from this mass analyzing magmet should default energy region in ionic fluid line subtended angle in perpendicular proofread and correct; S
4, by this speed change turning system will from this magnetic compensator should default energy region in deflected ion beam to predeterminated position and direction, and make its acceleration or deceleration to default Implantation Energy; S
5, by this workpiece scanning system make workpiece with a predetermined angle shuttle-scanning by the ionic fluid in this default energy region.
Preferably, at step S
2In from the ionic fluid from this extraction system, select low energy ion beam by this mass analyzing magmet, at step S
4In make this low energy ion beam in horizontal plane, carry out twice deflection and slow down simultaneously by this speed change turning system, at step S
5In make workpiece carry out the two-dimensional scan campaign in level and vertical direction by this workpiece scanning system.
Preferably, at step S
2In from the ionic fluid from this extraction system, select high energy ion beam by this mass analyzing magmet, at step S
4In make this high energy ion beam in horizontal plane, carry out a deflection and acceleration or deceleration simultaneously by this speed change turning system, at step S
5In make workpiece carry out the two-dimensional scan campaign in level and vertical direction by this workpiece scanning system.
Preferably, between this extraction system and this mass analyzing magmet, be provided with one scan magnet, at step S
1With S
2Between, by this sweeping magnet the ionic fluid from this extraction system is scanned at vertical direction, at step S
2In from the ionic fluid from this sweeping magnet, select low energy ion beam by this mass analyzing magmet, at step S
4In make this low energy ion beam in horizontal plane, carry out twice deflection and slow down simultaneously by this speed change turning system, at step S
5In make workpiece carry out One-Dimensional Water simple scan motion by this workpiece scanning system, wherein, this sweeping magnet in the scanning angle scope of vertical direction so that this low energy ion beam at the line distribution range at workpiece place coating workpieces in the vertical.
Preferably, between this extraction system and this mass analyzing magmet, be provided with one scan magnet, at step S
1With S
2Between, by this sweeping magnet the ionic fluid from this extraction system is scanned at vertical direction, at step S
2In from the ionic fluid from this sweeping magnet, select high energy ion beam by this mass analyzing magmet, at step S
4In make this high energy ion beam in horizontal plane, carry out a deflection and acceleration or deceleration simultaneously by this speed change turning system, at step S
5In make workpiece carry out One-Dimensional Water simple scan motion by this workpiece scanning system, wherein, this sweeping magnet in the scanning angle scope of vertical direction so that this high energy ion beam at the line distribution range at workpiece place coating workpieces in the vertical.
Preferably, this sweeping magnet is-10 °～+ 10 ° in the scanning angle scope of vertical direction.
Preferably, at step S
2In this mass analyzing magmet make 45 °～110 ° of this deflected ion beams.
Preferably, at step S
3In this magnetic compensator the line subtended angle in the perpendicular is proofreaied and correct to parallel with the beam transfer path.
Preferably, planar and in abutting connection with the workpiece place be provided with a line diagnositc equipment at workpiece, at step S
5In beam intensity and angular distribution by this beam diagnostics device measuring workpiece place.
Preferably, at step S
5In this beam diagnostics equipment take off data is fed back to a treater that is used for this ion implantation apparatus of control.
Positive progressive effect of the present invention is: the present invention can be by the size of current of gated sweep magnet, mass analyzing magmet and magnetic compensator, strong and the angular distribution of the stream of control line, improve the utilising efficiency of line, cooperatively interacting of above-mentioned three groups of magnet can be optimized the dosage of line and the homogeneity of angle more easily; In addition, by deflection, focusing and the variable speed control of speed change turning system to line, so that line not only has higher stream is strong, can also keep preferably energy monochromaticity; In addition, DATA REASONING and feedback by beam diagnostics equipment, so that treater can be regulated further based on these take off data the parameter of each element in the beam transfer process, after repeatedly carrying out this measurement, feedback, regulate process, just can realize the optimization of parameter, the final realization increases the purpose that the injection stream of ionic fluid on workpiece by force, is accurately controlled the accuracy of ion incidence angle, raising ion beam dose, thereby improves the efficient that device injects in larger ion energy scope (tens eV are to hundreds of keV).
Description of drawings
Fig. 1 is the schematic top plan view of the first embodiment of ion implantation apparatus of the present invention.
Fig. 2 is the schematic top plan view of the second embodiment of ion implantation apparatus of the present invention.
Fig. 3 is the schematic side view of the calibration result of magnetic compensator in the ion implantation apparatus of the present invention.
Fig. 4 is the schematic side view of the scanning effect of sweeping magnet in the ion implantation apparatus of the present invention.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to describe technical scheme of the present invention in detail.
With reference to figure 1 and Fig. 2, ion implantation apparatus of the present invention mainly comprises: an ion source and an extraction system, this extraction system are used for drawing ionic fluid from this ion source; One mass analyzing magmet is used for deflection from the ionic fluid of this extraction system, to select the ionic fluid (being the high energy ion beam described in the following embodiment or low energy ion beam) in the default energy region from this ionic fluid; One magnetic compensator is used for this high energy or the line subtended angle of low energy ion beam in perpendicular from this mass analyzing magmet are proofreaied and correct; One speed change turning system is used for and will deflects to predeterminated position and direction from this high energy or the low energy ion beam of this magnetic compensator, and can state from the transmitting energy acceleration or deceleration to default final Implantation Energy; One workpiece scanning system is used for making workpiece to pass through this high energy or low energy ion beam with a predetermined angle shuttle-scanning, to realize that ionic fluid is to the even injection of workpiece.
Correspondingly, the ion injection method that utilizes above-mentioned ion implantation apparatus to carry out mainly may further comprise the steps:
S
1, utilize this extraction system to draw ionic fluid from this ion source.
S
2, by this mass analyzing magmet deflection from the ionic fluid of this extraction system, from this ionic fluid, to select required high energy or low energy ion beam.
S
3, by this magnetic compensator this high energy or the line subtended angle of low energy ion beam in perpendicular from this mass analyzing magmet are proofreaied and correct.
S
4, will deflect to predeterminated position and direction from this high energy or the low energy ion beam of this magnetic compensator by this speed change turning system, and can state from the transmitting energy acceleration or deceleration to default final Implantation Energy.
S
5, by this workpiece scanning system make workpiece with a predetermined angle shuttle-scanning by this high energy or low energy ion beam, ion implantation to finish.
Below will be respectively the present invention is described in detail for not adopting sweeping magnet and adopting the situation of sweeping magnet.
Figure 1 shows that the schematic top plan view when the present invention carries out the ionic fluid injection of energy lower (even energy is ultralow) in the situation that does not adopt sweeping magnet.After extraction system 2 is drawn ionic fluid from ion source 1, this ionic fluid is by mass analyzing magmet 4 deflections for example (in the paper plane of Fig. 1) about 90 °, select low energy ion beam and send into magnetic compensator 5 therefrom to separate, but mass analyzing magmet 4 does not change the shape of line in this process, and namely the relative position in the horizontal of the ion in the line remains unchanged.Magnetic compensator 5 can be proofreaied and correct the line subtended angle of this low energy ion beam in perpendicular, preferably this subtended angle is proofreaied and correct to parallel with the transmission route of line (as shown in Figure 3), so that line finally can inject workpiece equably.Then, this low energy ion beam is carried out twice deflection (as shown in Figure 1) by speed change turning system 6 (in paper plane of Fig. 1) in horizontal plane and slows down simultaneously, focuses on, and finally injects workpiece at predeterminated position with preset direction.This speed change turning system 6 is so that this ionic fluid more low-yield or ultra-low calorie can when obtaining than Gao Liuqiang, keep preferably energy monochromaticity.Workpiece is then by workpiece scanning system 7 controls, be passed into vacuum chamber from atmospheric environment by mechanical arm, then keep a predetermined angle and in the horizontal direction (along the arrow A direction among Fig. 1) carry out the two-dimentional machinery scanning motion with vertical direction (the vertical paper direction of Fig. 1), repeatedly pass through line, ion beam dose is distributed on the workpiece equably, by mechanical arm workpiece is passed to atmospheric environment from vacuum chamber when finishing again after ion implantation.
In addition, can also planar and in abutting connection with the workpiece place one line diagnositc equipment be set at workpiece, be used for measuring the parameters relevant with injection process of line, for example line is in intensity and the angular distribution at workpiece place, for operator's reference.The structure of this beam diagnostics equipment can comprise: do not have the Faraday cup of line angle measuring function, and have in the Faraday cup of vertical and/or horizontal direction line angle measuring function one or more.In addition, this beam diagnostics equipment can also feed back to these take off data the treater for each element of this ion implantation apparatus of control, so that this treater can further be regulated based on these take off data the parameter setting of each element, after repeatedly carrying out this measurement, feedback, regulate process, just can realize the optimization of component parameters, for example by constantly regulating the size of current of respectively organizing magnet, optimize the strong and angular distribution of stream of line, improve better the utilising efficiency of line.
This ion implantation apparatus that does not adopt sweeping magnet also can be used for carrying out the injection (not shown) of high energy ion beam.The difference of the injection of high energy ion beam and the injection of above-mentioned low energy ion beam is, at this moment, mass analyzing magmet 4 will be from the deflected ion beam of extraction system 2 for example about 90 °, selects high energy ion beam and sends into magnetic compensator 5 therefrom to separate; Speed change turning system 6 can be in horizontal plane carries out this high energy ion beam a deflection, and simultaneously with its acceleration or deceleration and focusing, all the other steps of injection process then with present embodiment in the injection all fours of low energy ion beam.
Embodiment 2
Figure 2 shows that the present invention has adopted carries out the schematic top plan view of the higher ionic fluid of energy when injecting in the situation of sweeping magnet, the ion that this energy is higher can be for example As of energy below 50kev
+, P
+, B
+Plasma.As different from Example 1, present embodiment is provided with one scan magnet 3 between extraction system 2 and mass analyzing magmet 4, ionic fluid by extraction system 2 after ion source 1 is drawn, be scanned magnet 3 vertical direction and for example-5 °～+ 5 ° angular range in rapid scanning (shown in Figure 4 be the state that ionic fluid is upward deflected), thereby so that ionic fluid in the vertical direction under the state of constantly quick up and down deflection forms certain distribution, and the scanning motion of sweeping magnet 3 can't destroy the shape of line.Then, when the ionic fluid after scanning passes through mass analyzing magmet 4, equally by mass analyzing magmet 4 deflections for example about 90 °, select high energy ion beam and send into magnetic compensator 5 therefrom to separate, mass analyzing magmet 4 does not change the shape of line equally in this process, and namely the relative position in the horizontal of the ion in the line remains unchanged.Magnetic compensator 5 can be proofreaied and correct the line subtended angle of this high energy ion beam in perpendicular, preferably this subtended angle is proofreaied and correct to parallel with the transmission route of line (as shown in Figure 3).Then, this high energy ion beam is carried out a deflection and is focused by speed change turning system 6 ' (in paper plane of Fig. 2) in horizontal plane, carries out simultaneously acceleration or deceleration, finally injects workpiece at predeterminated position with preset direction.By the impact on line of sweeping magnet 3, mass analyzing magmet 4 and magnetic compensator 5, can be so that line coating workpieces in the vertical when finally reaching the workpiece place, for example in the present embodiment, this high energy ion beam can form an one dimension that vertically covers about 460mm scope and distribute at the workpiece place, can cover the workpiece that diameter wafer is less than or equal to 300mm, and when diameter wafer during greater than 300mm, also can realize that line is to vertical covering of workpiece by the parameter of regulating sweeping magnet 3, mass analyzing magmet 4 and magnetic compensator 5.Especially, carry out suitable adjusting by the electric current to sweeping magnet 3, can be so that the strong in the vertical direction of Beam Current reaches even distribution.In the present embodiment, the workpiece that is less than or equal to 300mm for diameter wafer, this workpiece scanning system 7 with workpiece with after line is aimed in the vertical, only need make workpiece carry out the mechanical scanning campaign of one dimension horizontal direction (along the arrow A direction among Fig. 2), just can so that the dosage of this high energy ion beam be injected on the workpiece equably.Greatly reduced like this and injected the required time, improved ion implantation production efficiency.In addition, the beam diagnostics equipment identical with embodiment 1 can be set in the present embodiment equally, with by constantly regulating the parameter of each element, the size of current of sweeping magnet 3, mass analyzing magmet 4 and magnetic compensator 5 for example, optimize the strong and angular distribution of stream of line, improve better the utilising efficiency of line.
This ion implantation apparatus that has adopted sweeping magnet also can be used for carrying out the injection (not shown) of low energy ion beam.The difference of the injection of low energy ion beam and the injection of above-mentioned high energy ion beam is, at this moment, the deflected ion beam of mass analyzing magmet 4 in the future self-scanning magnet 3 is for example about 90 °, selects low energy ion beam and sends into magnetic compensator 5 therefrom to separate; Speed change turning system 6 can be in horizontal plane carry out this low energy ion beam twice deflection and simultaneously with its deceleration, focusing, all the other steps of injection process then with present embodiment in the injection all fours of high energy ion beam.
Sweeping magnet in the various embodiments described above, mass analyzing magmet, magnetic compensator all can adopt existing electromagnet structure to realize, and the speed change turning system also can utilize known electrical effect or magnetic effect to be realized to deflection, the variable speed control of ionic fluid, does not give unnecessary details so all do not do at this.
In sum, it is strong that this ion implantation apparatus of the present invention and method can increase the injection stream of ionic fluid on workpiece, accurately control ion incidence angle improves the accuracy of ion beam dose, thereby improves the efficient that device injects in larger ion energy scope.
Although more than described the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited by appended claims.Those skilled in the art can make various changes or modifications to these embodiments under the prerequisite that does not deviate from principle of the present invention and essence, but these changes and modification all fall into protection scope of the present invention.
Claims (21)
1. ion implantation apparatus is characterized in that it comprises:
One ion source and an extraction system, this extraction system are used for drawing ionic fluid from this ion source;
One mass analyzing magmet is used at the ionic fluid of horizontal plane intrinsic deflection from this extraction system, and to select the ionic fluid in the default energy region from this ionic fluid, this mass analyzing magmet does not change the shape of line in this process;
One magnetic compensator is used for the line subtended angle of ionic fluid in perpendicular that should preset in the energy region from this mass analyzing magmet proofreaied and correct;
One speed change turning system, be used in horizontal plane will from this magnetic compensator should default energy region in deflected ion beam to predeterminated position and direction, and make its acceleration or deceleration to default Implantation Energy;
One workpiece scanning system, be used for making workpiece with a predetermined angle shuttle-scanning by the ionic fluid in this default energy region.
2. ion implantation apparatus as claimed in claim 1, it is characterized in that, this mass analyzing magmet can be selected low energy ion beam from the ionic fluid from this extraction system, this speed change turning system can make this low energy ion beam carry out twice deflection in horizontal plane and slow down simultaneously, and this workpiece scanning system can make workpiece carry out the two-dimensional scan campaign in level and vertical direction.
3. ion implantation apparatus as claimed in claim 1, it is characterized in that, this mass analyzing magmet can be selected high energy ion beam from the ionic fluid from this extraction system, this speed change turning system can make this high energy ion beam carry out a deflection and while acceleration or deceleration in horizontal plane, and this workpiece scanning system can make workpiece carry out the two-dimensional scan campaign in level and vertical direction.
4. ion implantation apparatus as claimed in claim 1, it is characterized in that, between this extraction system and this mass analyzing magmet, be provided with one scan magnet, be used for the ionic fluid from this extraction system is scanned at vertical direction, and, this mass analyzing magmet can be selected low energy ion beam from the ionic fluid from this sweeping magnet, this speed change turning system can make this low energy ion beam carry out twice deflection in horizontal plane and slow down simultaneously, this workpiece scanning system can make workpiece carry out the motion of One-Dimensional Water simple scan, wherein, this low energy ion beam is at the line distribution range at workpiece place coating workpieces in the vertical.
5. ion implantation apparatus as claimed in claim 1, it is characterized in that, between this extraction system and this mass analyzing magmet, be provided with one scan magnet, be used for the ionic fluid from this extraction system is scanned at vertical direction, and, this mass analyzing magmet can be selected high energy ion beam from the ionic fluid from this sweeping magnet, this speed change turning system can make this high energy ion beam carry out a deflection and while acceleration or deceleration in horizontal plane, this workpiece scanning system can make workpiece carry out the motion of One-Dimensional Water simple scan, wherein, this high energy ion beam is at the line distribution range at workpiece place coating workpieces in the vertical.
6. such as claim 4 or 5 described ion implantation apparatuses, it is characterized in that this sweeping magnet is-10 °～+ 10 ° in the scanning angle scope of vertical direction.
7. such as the described ion implantation apparatus of any one among the claim 1-5, it is characterized in that this mass analyzing magmet can make 45 °～110 ° of this deflected ion beams.
8. such as the described ion implantation apparatus of any one among the claim 1-5, it is characterized in that this magnetic compensator can be proofreaied and correct the line subtended angle in the perpendicular to parallel with the beam transfer path.
9. such as the described ion implantation apparatus of any one among the claim 1-5, it is characterized in that, planar and in abutting connection with the workpiece place be provided with a line diagnositc equipment in workpiece institute, be used for beam intensity and the angular distribution at measuring workpieces place.
10. ion implantation apparatus as claimed in claim 9 is characterized in that, this beam diagnostics equipment can feed back to take off data one treater for this ion implantation apparatus of control.
11. ion implantation apparatus as claimed in claim 9 is characterized in that, this beam diagnostics equipment comprises the Faraday cup with line angle measuring function, and the Faraday cup with vertical and/or horizontal direction line angle measuring function.
12. an ion injection method that utilizes ion implantation apparatus claimed in claim 1 is characterized in that it may further comprise the steps:
S
1, utilize this extraction system to draw ionic fluid from this ion source;
S
2, by this mass analyzing magmet at the ionic fluid of horizontal plane intrinsic deflection from this extraction system, to select the ionic fluid in the default energy region from this ionic fluid, this mass analyzing magmet does not change the shape of line in this process;
S
3, by this magnetic compensator to from this mass analyzing magmet should default energy region in ionic fluid line subtended angle in perpendicular proofread and correct;
S
4, by this speed change turning system in horizontal plane will from this magnetic compensator should default energy region in deflected ion beam to predeterminated position and direction, and make its acceleration or deceleration to default Implantation Energy;
S
5, by this workpiece scanning system make workpiece with a predetermined angle shuttle-scanning by the ionic fluid in this default energy region.
13. ion injection method as claimed in claim 12 is characterized in that, at step S
2In from the ionic fluid from this extraction system, select low energy ion beam by this mass analyzing magmet, at step S
4In make this low energy ion beam in horizontal plane, carry out twice deflection and slow down simultaneously by this speed change turning system, at step S
5In make workpiece carry out the two-dimensional scan campaign in level and vertical direction by this workpiece scanning system.
14. ion injection method as claimed in claim 12 is characterized in that, at step S
2In from the ionic fluid from this extraction system, select high energy ion beam by this mass analyzing magmet, at step S
4In make this high energy ion beam in horizontal plane, carry out a deflection and acceleration or deceleration simultaneously by this speed change turning system, at step S
5In make workpiece carry out the two-dimensional scan campaign in level and vertical direction by this workpiece scanning system.
15. ion injection method as claimed in claim 12 is characterized in that, is provided with one scan magnet between this extraction system and this mass analyzing magmet, at step S
1With S
2Between, by this sweeping magnet the ionic fluid from this extraction system is scanned at vertical direction, at step S
2In from the ionic fluid from this sweeping magnet, select low energy ion beam by this mass analyzing magmet, at step S
4In make this low energy ion beam in horizontal plane, carry out twice deflection and slow down simultaneously by this speed change turning system, at step S
5In make workpiece carry out One-Dimensional Water simple scan motion by this workpiece scanning system, wherein, this sweeping magnet in the scanning angle scope of vertical direction so that this low energy ion beam at the line distribution range at workpiece place coating workpieces in the vertical.
16. ion injection method as claimed in claim 12 is characterized in that, is provided with one scan magnet between this extraction system and this mass analyzing magmet, at step S
1With S
2Between, by this sweeping magnet the ionic fluid from this extraction system is scanned at vertical direction, at step S
2In from the ionic fluid from this sweeping magnet, select high energy ion beam by this mass analyzing magmet, at step S
4In make this high energy ion beam in horizontal plane, carry out a deflection and acceleration or deceleration simultaneously by this speed change turning system, at step S
5In make workpiece carry out One-Dimensional Water simple scan motion by this workpiece scanning system, wherein, this sweeping magnet in the scanning angle scope of vertical direction so that this high energy ion beam at the line distribution range at workpiece place coating workpieces in the vertical.
17., it is characterized in that this sweeping magnet is-10 °～+ 10 ° in the scanning angle scope of vertical direction such as claim 15 or 16 described ion injection methods.
18. such as the described ion injection method of any one among the claim 12-16, it is characterized in that, at step S
2In this mass analyzing magmet make 45 °～110 ° of this deflected ion beams.
19. such as the described ion injection method of any one among the claim 12-16, it is characterized in that, at step S
3In this magnetic compensator the line subtended angle in the perpendicular is proofreaied and correct to parallel with the beam transfer path.
20. such as the described ion injection method of any one among the claim 12-16, it is characterized in that, planar and in abutting connection with the workpiece place be provided with a line diagnositc equipment at workpiece, at step S
5In beam intensity and angular distribution by this beam diagnostics device measuring workpiece place.
21. ion injection method as claimed in claim 20 is characterized in that, at step S
5In this beam diagnostics equipment take off data is fed back to a treater that is used for this ion implantation apparatus of control.
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| CN102479654B (en) * | 2010-11-30 | 2014-07-23 | 上海凯世通半导体有限公司 | Ion implantation equipment and method thereof |
| CN103367126B (en) * | 2012-03-28 | 2016-03-09 | 无锡华润上华科技有限公司 | Ion injection method |
| CN105264636B (en) * | 2014-04-10 | 2018-12-25 | 上海凯世通半导体股份有限公司 | Beam Transport Systems and method |
| JP6675789B2 (en) * | 2017-02-27 | 2020-04-01 | 住友重機械イオンテクノロジー株式会社 | Ion implanter |
| CN117295223B (en) * | 2023-11-27 | 2024-04-05 | 青岛四方思锐智能技术有限公司 | Sectional type radio frequency acceleration system and ion implanter |
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| US5132544A (en) * | 1990-08-29 | 1992-07-21 | Nissin Electric Company Ltd. | System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132544A (en) * | 1990-08-29 | 1992-07-21 | Nissin Electric Company Ltd. | System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning |
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Address after: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee after: KINGSTONE SEMICONDUCTOR COMPANY LTD. Address before: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee before: Shanghai Kaishitong Semiconductor Co., Ltd. |
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Denomination of invention: Ion implantation device and method Effective date of registration: 20180319 Granted publication date: 20130313 Pledgee: Pudong Shanghai technology financing Company limited by guarantee Pledgor: KINGSTONE SEMICONDUCTOR COMPANY LTD. Registration number: 2018310000012 |
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