CN103219217A - Faraday system for ion implanter target chamber and method for detecting ion beam current quality - Google Patents
Faraday system for ion implanter target chamber and method for detecting ion beam current quality Download PDFInfo
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- CN103219217A CN103219217A CN2013100960904A CN201310096090A CN103219217A CN 103219217 A CN103219217 A CN 103219217A CN 2013100960904 A CN2013100960904 A CN 2013100960904A CN 201310096090 A CN201310096090 A CN 201310096090A CN 103219217 A CN103219217 A CN 103219217A
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Abstract
The invention discloses a Faraday system for an ion implanter target chamber and a method for detecting ion beam current quality. The Faraday system for the ion implanter target chamber comprises a cavity for carrying out ion implantation technology, namely a target chamber, a device target table for fixing wafers, a moving Faraday piece, a closed-loop Faraday piece, an angle Faraday piece and an electronic shower. According to the method for detecting the ion beam current quality, an ion implantation device produces plasma through an ion source before the ion implantation technology is carried, the plasma is extracted through an extraction device, and suitable ions are screened out through a quality analyzer and then accelerated and enter the target chamber through electric scanning. Ion beams detected by the method meet implantation index requirements and then are ready to be implanted when the target table moves to an implantation, meanwhile, the electronic shower is adopted for producing electrons to neutralize positive charges of the ion beams to eliminate bad effect of charge accumulation on the wafers, and the yield of products is improved.
Description
Technical field
The present invention relates to ion beam and inject the field, be specially a kind of faraday system of ion implantor target chamber and method that the quality inspection of ion beam family status is surveyed of being used for.
Background technology
As far back as the sixties in 20th century, ion implantation technique just is applied in the production of semiconductor device.Ion implantation technique is carried out ionization with certain atoms of elements exactly, and it is quickened in electric field, obtains to inject after the higher speed surface of solid material, shows the physics of this material surface or a kind of technology of chemical property with this.
First integrated circuit was born so far more than 50 year in the world from 1858, the develop rapidly of world's integrated circuit technique and industry, experience be (hundreds of elements), middle scale, extensive, ultra-large, epoch of having entered imperial scale (ten million with last element) to today on a small scale.Along with the raising of integrated level and the increase of circuit scale, the unit component size is constantly dwindled in the circuit, and pattern character size becomes each peculiar sign for circuit engineering.In 20 end of the centurys, the ic manufacturing technology main flow is 8 inches silicon chips of 0.13 micron; But through the time in a few years, 100 nanometers, 65 nanometers, the technology of 32 nanometers also enter production successively; Be subjected to the driving of economic interests simultaneously, lower production cost and the production efficiency of Geng Gao are pursued by integrated circuit manufacturer.The size of silicon chip also increases to 300mm by 200mm, thereby can produce more device on the monolithic silicon chip.
Along with the increase with die size of reducing of critical size, also more and more higher to the requirement of various production equipments.Ion implantation device also is subjected to very stern challenge at aspects such as the accuracy of restrainting the depth of parallelism, implantation dosage, uniformities.When the size of wafer also 150mm or littler in, faraday can accurately measure the line value size of ion beam, and uniformity also satisfies extensive integrated requirement.But after die size increases to 300mm, only measure line value size, can not meet the demands by a faraday.Along with the size increase of wafer, the dosage variation that the device on the same wafer injects can be big more; The quality of ion beam line in the process of using changes, and monitors line in real time and also becomes necessary; The bundle collimation also needs to measure.
Summary of the invention
In order to overcome the deficiency that existing faraday system is difficult to monitor line, the present invention aims to provide a kind of faraday system of ion implantor target chamber and method that the quality inspection of ion beam family status is surveyed of being used for, this faraday system can detect the quality of beam of the ion beam of ion implantation device generation, guarantee that the ion beam each side of injecting workpiece all meets the demands, thereby improve the yields of injecting workpiece.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of faraday system that is used for the ion implantor target chamber, its design feature are to comprise the target chamber with vacuum cavity; Place target platform, mobile faraday, angle faraday, closed loop faraday and electronic shower in the target chamber; The described target platform that is used for fixing workpiece be positioned at electronic shower under; Be used to detect the described mobile faraday that ion beam injects the line amount before the workpiece and be positioned at target chamber top, and can be along the ion beam width direction, promptly directions X moves back and forth; Be positioned at the target chamber bottom with described mobile faraday's conjunction measuring ion beam with respect to the tilt angle alpha of directions X and the described angle faraday of monitoring ion beam dose; The described closed loop faraday who is used for the injection line of real-time monitoring ion bundle and dosage is between electronic shower and angle faraday, and this closed loop faraday is positioned at the outside of ion beam; Described angle faraday is arranged in juxtaposition on directions X by a plurality of Faraday cups and forms, and the distance between two Faraday cups at two ends is not less than the beamwidth of ion beam, and described mobile faraday and closed loop faraday respectively comprise a Faraday cup; The described electronic shower that is used for the intrafascicular electronics of neutralize ions before ion injects is between mobile faraday and target platform;
Described Faraday cup comprises the magnetic restraining device, and the external electrode between magnetic restraining device two magnetic poles is positioned at the electrode of external electrode inboard, the inhibition electrode between external electrode and interior electrode; Described inhibition electrode is electrically connected with described interior electrode.
Below be the technical scheme of further improvement of the present invention:
In order to prevent and treat inside and outside electrode contact, be provided with insulator between described external electrode and the interior electrode.
Move the drive form that Faraday's Faraday cup moves back and forth along directions X as a kind of the driving, described mobile Faraday's Faraday cup links to each other with drive motors.
Further, described closed loop faraday and injection workpiece, target platform are in same plane, are convenient to injection line and dosage that real-time monitoring ion bundle injects workpiece.
In order to prevent that the magnetic field among the closed loop faraday from producing interference to injection process, described closed loop faraday is provided with the shielding outer cover outward.
As a kind of object lesson, described angle faraday comprises 5 or 7 Faraday cups, and the distance between adjacent two Faraday cups equates.
As concrete workpiece fixed form, described target platform is by mechanical grip or Electrostatic Absorption fixation workpiece.
According to embodiments of the invention, described workpiece is preferably wafer.
Described ion beam is preferably ribbon beam.
Further, the present invention also provides a kind of the above faraday system that is used for the ion implantor target chamber that utilizes to carry out the method that the quality inspection of ion beam family status is surveyed, and is characterized in that it comprises the steps:
1) before ion beam injects workpiece, at first drives mobile faraday and scan, obtain the line value size of ion beam along the beam width direction; And the control appliance by ion implantation device is adjusted the line value size of ion beam and is met index request;
2) move when blocking the part ion bundle mobile faraday, can produce shade on the angle faraday, according to moving Faraday's position this moment and the Faraday's distance calculation of angle goes out the inclined angle alpha of ion beam with respect to directions X; And this inclined angle alpha is adjusted to 90 °;
When 3) ion beam injected workpiece, mobile faraday was positioned at the outside of ion beam; The injection line and the dosage of the real-time monitoring ion bundle of described closed loop faraday.
By said structure, the faraday system that is used for the ion implantor target chamber of the present invention comprises the target platform of mobile faraday, angle faraday, closed loop faraday, electronic shower, the vacuum cavity that is used for injection technology and fixation workpiece.Wherein all Faraday cups all have electricity inhibition and magnetic inhibit feature, eliminate because the measure error that secondary electron and back scattered electron bring.Ion beam is produced after the back mistake is drawn, analyzes, quickens, scanned by ion source and enters process cavity, i.e. target chamber.Before injecting workpiece, at first pass through the size that mobile faraday gathers the ion beam line, mobile faraday is positioned at the porch that line enters target chamber, is scanned along the beam width direction by drive motor means, and the line that obtains ion beam distributes.Control appliance adjustment by ion implantation device obtains satisfactory line.Mobile faraday stops at the safety zone in injection process.
Closed loop faraday is positioned at the same plane of target platform, is used for monitoring in real time line value size and implantation dosage.Because the relative target platform of closed loop faraday is in the edge of line, the target platform is in the middle position of line.Because the inhomogeneities of bundle, there is deviation in the line value size in edge and center.In order to make mobile faraday and closed loop faraday use same standard, so need proofread and correct to closed loop faraday.Closed loop faraday closes on and injects workpiece (wafer), disturbs injecting to produce for preventing electric field and magnetic field, and closed loop faraday also need increase the shielding outer cover.
Angle faraday is positioned at the dead astern of target platform, and angle faraday is made up of a plurality of Faraday cups, and a plurality of Faraday cups are with equidistant distribution, and the distance of two Faraday cups at two ends is identical with the width of target platform.When mobile Faraday cup moves certain position, block ion beam, be incident upon and just have a shade on the angle Faraday cup.Can calculate the inclination angle according to moving Faraday's position and the Faraday's distance of angle at this moment.
Compared with prior art, the invention has the beneficial effects as follows: the present invention utilizes a plurality of Faraday apparatus to carry out quality of beam and measures, and behind the satisfied injection of the ion beam that the records index request, the target platform moves to the position of injection and prepares to inject, and accumulates wafer generation harmful effect in order to eliminate electric charge simultaneously.Also need to adopt electronic shower to produce the positive charge of electronics neutralize ions bundle, improved yield of products.
The present invention is further elaborated below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is the schematic diagram of the preceding target chamber of ion beam injection in the XY plane figure;
Target chamber was at the schematic diagram of XY plane figure when Fig. 2 injected for ion beam;
Fig. 3 is the structural representation of Faraday cup of the present invention.
Embodiment
A kind of faraday system that is used for the ion implantor target chamber, as illustrated in fig. 1 and 2, comprise the cavity that carries out ion implantation technology, the device target platform 21, one that are target chamber 20 and fixed wafer 12 can be along ion beam width direction rapid movements, and the Faraday apparatus that is used for the detection of line before ion implantation device intermediate ion bundle injects technology sheet into moves faraday 30; A Faraday apparatus closed loop faraday 32 who participates in closed-loop control is used for line and dosage that monitoring is in real time injected;
OneAngle faraday 34, are used for and move farad participating in angular surveying and dosage monitoring together; An electronic shower 26.Before injection technology, there is ion implantation device to produce plasma through ion source, draw through ejector, filter out suitable ion through mass analyzer again, be accelerated then, electric scanning enters target chamber 20 at last.The described ion beam 10 of this embodiment is a ribbon beam.
How to control the parameter such as dosage, uniformity, implant angle of injection below in conjunction with description of drawings.
In order accurately to control the injectant value, to accurately record ion beam 10 line values earlier.Electrode 3, external electrode 2 in all Faraday cups comprise as shown in Figure 3, suppress electrode 4 and the insulator 6 that interior electrode 3 and external electrode 2 are separated, magnetic restraining device 5 in addition, magnetic restraining device 5 is made up of two blocks of permanent magnets, and the N utmost point of a magnet points to the S utmost point of an other magnet.Owing to suppress to exist between electrode 4 and the interior electrode 3 electric field to stop secondary electron 10b to flee from, magnetic restraining device 5 produces magnetic fields and makes the side of electrode in the ionic bombardment, thereby stops fleeing from of backscattering ion 10a.Thereby after having eliminated secondary electron 10b that ion beam bombardment electrode outer surface produces and ionic bombardment electrode the measure error that backscattered ion 10a brings takes place.Accurately record the line value of ion beam 10, realize the accurate control of implantation dosage by the control injection length.
Inhomogeneity method of measurement starts the mobile faraday 30 of drive motors 31 drivings and scans along directions X for after ion beam 10 enters target chamber 20, and Faraday cup collects ion beam 10 along the line value on the directions X simultaneously.The value that to gather after collection is finished is given controller analysis, can inject if the line that draws meets the requirements, otherwise then need the parameter of magnet in the light path is adjusted, and closed loop faraday 32 also participates in the closed-loop control of controller simultaneously.Disturb closed loop faraday's 32 increase shielding outer covers 33 to injecting to produce in order to prevent the magnetic field among the closed loop faraday 32.
The measurement of angle is finished together by mobile faraday 30 and angle faraday 34.Angle faraday 34 is made up of 7 Faraday cups 35, and wherein first glass and the 7th cup lay respectively at the end positions place of target platform.When mobile Faraday cup 30 certain position of motion, block ion beam, be incident upon and just have a shade on the angle Faraday cup 34.According to mobile faraday's 30 position and angle faraday 34 coordinate figure can be calculated inclination angle a at this moment.
After the line index that draws ion beam 10, and all indexs of ion beam 10 all meet the injection requirement, transmission wafer 12 is to target platform 21 places, the electrical type of unlocking electronic shower 26 generations simultaneously is similar to the mode of spray ion beam 10 is carried out the electronics N-process, is injected on the wafer 12 by the ion beam 10 of shower at last.
The above elaborates content of the present invention.For persons skilled in the art, any conspicuous change that it is done all constitutes to infringement of the present invention, with corresponding legal responsibilities without departing from the premise in the spirit of the present invention.
Claims (10)
1. a faraday system that is used for the ion implantor target chamber is characterized in that, comprises the target chamber (20) with vacuum cavity; Place target platform (21), mobile faraday (30), angle faraday (34), closed loop faraday (32) and electronic shower (26) in the target chamber (20); The described target platform (21) that is used for fixing workpiece (12) be positioned at electronic shower (26) under; Be used to detect the described mobile faraday (30) that ion beam (10) injects workpiece (12) line amount before and be positioned at target chamber (20) top, and can be along ion beam (10) Width, promptly directions X moves back and forth; Be positioned at target chamber (20) bottom with described mobile faraday (30) conjunction measuring ion beam (10) with respect to the tilt angle alpha of directions X and the described angle faraday (34) of monitoring ion bundle (10) dosage; Be used for the injection line of real-time monitoring ion bundle (10) and the described closed loop faraday (32) of dosage and be positioned between electronic shower (26) and the angle faraday (34), and this closed loop faraday (32) is positioned at the outside of ion beam (10); Described angle faraday (34) is arranged in juxtaposition on directions X by a plurality of Faraday cups (35) and forms, and the distance between two Faraday cups at two ends is not less than the beamwidth of ion beam (10), and described mobile faraday (30) and closed loop faraday (32) respectively comprise a Faraday cup (35); The described electronic shower (26) that is used for neutralize ions bundle (10) electronics before ion injects is positioned between mobile faraday (30) and the target platform (21);
Described Faraday cup (35) comprises magnetic restraining device (5), be positioned at the external electrode (2) between magnetic restraining device (5) two magnetic poles, be positioned at the inboard electrode (3) of external electrode (2), be positioned at the inhibition electrode (4) between external electrode (2) and the electrode (3); Described inhibition electrode (4) is electrically connected with described interior electrode (3).
2. according to the described faraday system that is used for the ion implantor target chamber of claim 1, it is characterized in that, be provided with insulator (6) between described external electrode (2) and the interior electrode (3).
3. according to the described faraday system that is used for the ion implantor target chamber of claim 1, it is characterized in that described mobile faraday's (30) Faraday cup (35) links to each other with drive motors (31).
4. according to the described faraday system that is used for the ion implantor target chamber of claim 1, it is characterized in that described closed loop faraday (32) and injection workpiece (12), target platform (21) are in same plane.
5. according to the described faraday system that is used for the ion implantor target chamber of claim 1, it is characterized in that the outer shielding outer cover (33) that is provided with of described closed loop faraday (32).
6. according to the described faraday system that is used for the ion implantor target chamber of claim 1, it is characterized in that described angle faraday (34) comprises 5 or 7 Faraday cups (35), the distance between adjacent two Faraday cups equates.
7. according to the described faraday system that is used for the ion implantor target chamber of claim 1, it is characterized in that described target platform (21) is by mechanical grip or Electrostatic Absorption fixation workpiece (12).
8. according to the described faraday system that is used for the ion implantor target chamber of one of claim 1 ~ 7, it is characterized in that described workpiece (12) is a wafer.
9. according to the described faraday system that is used for the ion implantor target chamber of one of claim 1 ~ 7, it is characterized in that described ion beam (10) is a ribbon beam.
10. one kind is utilized the described faraday system that is used for the ion implantor target chamber of one of claim 1 ~ 9 to carry out the method that the quality inspection of ion beam family status is surveyed, and it is characterized in that, comprises the steps:
1) injects workpiece (12) before at ion beam (10), at first drive mobile faraday (30) and scan, obtain the line value size of ion beam (10) along directions X; And the control appliance by ion implantation device is adjusted the line value size of ion beam and is met index request;
2) move when blocking the part ion bundle mobile faraday (30), angle faraday can produce shade on (34), goes out the inclined angle alpha of ion beam (10) with respect to directions X according to mobile faraday's this moment (30) position and angle faraday's (34) distance calculation; And this inclined angle alpha is adjusted to 90 °;
When 3) ion beam injected workpiece (12), mobile faraday (30) was positioned at the outside of ion beam (10); Described closed loop faraday (32) is the injection line and the dosage of monitoring ion bundle (10) in real time.
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| WO2015196399A1 (en) * | 2014-06-26 | 2015-12-30 | 上海凯世通半导体有限公司 | Ion implantation device |
| CN105575780A (en) * | 2014-10-15 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Control method of saturation current performance in semiconductor device |
| CN106531601A (en) * | 2016-10-31 | 2017-03-22 | 中国电子科技集团公司第四十八研究所 | Workpiece stage used for ion beam etching machine |
| CN106653534A (en) * | 2015-11-04 | 2017-05-10 | 北京中科信电子装备有限公司 | Simple Faraday structure and Faraday system adopting simple Faraday structure |
| CN108051844A (en) * | 2017-11-29 | 2018-05-18 | 北京创昱科技有限公司 | A kind of ion source line uniformity measurement apparatus |
| CN109417004A (en) * | 2017-04-13 | 2019-03-01 | 斯沃奇集团研究和开发有限公司 | Single charge or multiple-charged ion are injected into the method for subject surface to be processed and realize the device of this method |
| CN110031885A (en) * | 2019-03-26 | 2019-07-19 | 上海华力微电子有限公司 | A kind of line real time monitoring apparatus and method |
| CN110993615A (en) * | 2019-11-28 | 2020-04-10 | 信利(仁寿)高端显示科技有限公司 | Ion implantation method and manufacturing method of TFT substrate |
| CN111769042A (en) * | 2020-07-15 | 2020-10-13 | 济南晶正电子科技有限公司 | Ion implantation method |
| CN111769026A (en) * | 2019-04-02 | 2020-10-13 | 北京中科信电子装备有限公司 | Beam property measuring device and method |
| CN116825658A (en) * | 2023-08-30 | 2023-09-29 | 粤芯半导体技术股份有限公司 | Method and device for monitoring beam current of ion beam in real time |
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| CN106233422A (en) * | 2014-06-26 | 2016-12-14 | 上海凯世通半导体股份有限公司 | Ion implantation device |
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| CN106531601B (en) * | 2016-10-31 | 2018-03-20 | 中国电子科技集团公司第四十八研究所 | A kind of work stage for ion bean etcher |
| CN109417004A (en) * | 2017-04-13 | 2019-03-01 | 斯沃奇集团研究和开发有限公司 | Single charge or multiple-charged ion are injected into the method for subject surface to be processed and realize the device of this method |
| CN109417004B (en) * | 2017-04-13 | 2021-09-07 | 斯沃奇集团研究和开发有限公司 | Method for injecting single-charge or multi-charge ions into surface of object to be treated and device for implementing method |
| CN108051844A (en) * | 2017-11-29 | 2018-05-18 | 北京创昱科技有限公司 | A kind of ion source line uniformity measurement apparatus |
| CN108051844B (en) * | 2017-11-29 | 2019-11-05 | 北京创昱科技有限公司 | A kind of ion source line uniformity measurement apparatus |
| CN110031885A (en) * | 2019-03-26 | 2019-07-19 | 上海华力微电子有限公司 | A kind of line real time monitoring apparatus and method |
| CN111769026A (en) * | 2019-04-02 | 2020-10-13 | 北京中科信电子装备有限公司 | Beam property measuring device and method |
| CN111769026B (en) * | 2019-04-02 | 2024-03-12 | 北京中科信电子装备有限公司 | Beam property measuring device and method |
| CN110993615A (en) * | 2019-11-28 | 2020-04-10 | 信利(仁寿)高端显示科技有限公司 | Ion implantation method and manufacturing method of TFT substrate |
| CN111769042A (en) * | 2020-07-15 | 2020-10-13 | 济南晶正电子科技有限公司 | Ion implantation method |
| CN116825658A (en) * | 2023-08-30 | 2023-09-29 | 粤芯半导体技术股份有限公司 | Method and device for monitoring beam current of ion beam in real time |
| CN116825658B (en) * | 2023-08-30 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Method and device for monitoring beam current of ion beam in real time |
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Application publication date: 20130724 |