CN104392885B - Multi-station high-low temperature target table - Google Patents
Multi-station high-low temperature target table Download PDFInfo
- Publication number
- CN104392885B CN104392885B CN201410637727.0A CN201410637727A CN104392885B CN 104392885 B CN104392885 B CN 104392885B CN 201410637727 A CN201410637727 A CN 201410637727A CN 104392885 B CN104392885 B CN 104392885B
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- China
- Prior art keywords
- target
- rotation
- target body
- low temperature
- cold
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Abstract
The invention discloses a multi-station high-low temperature target table. The high-low temperature target platform comprises a target shell and a rotary target body which is arranged on the target shell and can rotate around the target shell; the rotating target body is circumferentially provided with a plurality of cold targets for clamping wafers, a Faraday component and at least one hot target for clamping wafers; a heating assembly is arranged in the hot target, and a structure for cooling the cold target is arranged in the rotary target body; the rotary target body, the cold target, the hot target and the Faraday component are all arranged in vacuum through sealing; and an oversweep device for detecting the beam scanning range is arranged on one side of the rotating target body, and a beam injection channel for injecting the beam onto the wafer is arranged between the oversweep device and the rotating target body. The invention can conveniently and quickly heat or cool the wafer needing ion implantation, thereby realizing the high-temperature or low-temperature implantation of the wafer.
Description
Technical field
The present invention relates to a kind of equipment for making semiconductor device, i.e. ion implantation apparatuses, particularly a kind of for special type
The multistation target platform structure of ion implantation apparatuses, belongs to field of semiconductor devices.
Background technology
Semiconductor device processing technology and technique are all extremely complex, and ion implantation doping belongs to fabrication of semiconductor device
In very crucial one technique.Ion implantation doping process is compared with conventional hot doping technique with high-precision dose uniformity
Property with repeatability, the advantages of horizontal proliferation is little, overcome the restriction of common process, improve integrated level, speed, the finished product of circuit
Rate and life-span, reduce cost and power consumption.The main flow ion implantation apparatuses end target chamber used on high-end production line is tied with target platform
Structure is extremely complex with control system, and manufacture maintenance cost is high, operating difficultiess, is only applicable to produce wafer track in enormous quantities.This
Invention multistation high/low temperature target platform low cost, simple structure, it is easy to safeguard is primarily adapted for use in low and middle-end ion implantation apparatuses, this kind of
Ion implantation apparatuses are mainly used to carry out scientific research or small lot batch manufacture.
The content of the invention
The present invention is intended to provide a kind of multistation high/low temperature target platform, the multistation high/low temperature target platform can to need injection from
The chip of son is heated or lowered the temperature, and realizes the high temperature or low temperature injection of chip.
To achieve these goals, the technical solution adopted in the present invention is：
A kind of multistation high/low temperature target platform, it is structurally characterized in that, including target shell, and is mounted on target shell and can revolve around target shell
The rotation target body for turning；The rotation target body is circumferentially equipped with multiple cold targets for clamping chip, faraday's component and at least
One hot target for being used for clamping chip；Heating component is provided with the hot target, is provided with the rotary target body and cold target is carried out cold
But structure；The rotation target body, cold target, hot target and faraday's component are placed in vacuum by sealing；The rotation target body
Side is provided with the sweeping device excessively that halved tie scan flow scope is detected, notes line crossing to be provided between sweeping device and rotation target body
Enter the line injection channel on chip.
It is below the technical scheme of further improvement of the present invention：
The line injection channel is externally provided with shielding cylinder, and shielding cylinder can effectively shield extraneous charged particle to rotary target
The impact of platform implantation dosage.
It is described to cross between sweeping device and shielding cylinder in order to suppress line that secondary electron onwards transmission is produced in sweeping device is crossed
Suppression electrode is provided with, wherein the suppression electrode was arranged on sweeping device rear side and was dielectrically separated from target shell.
The rotation target body has hollow cavity, and the hollow cavity is connected by pipeline with the cold target.Thus, in rotation
Turn target body inner chamber injection liquid nitrogen to cool down multiple cold targets, meanwhile, the multiple cold targets of pipeline communication, it is also possible to be passed through in pipeline
Recirculated cooling water, now four cold targets can make room temperature target and use.
The rotation target body is fusiform structure, is equiped with above-mentioned cold target, hot target and faraday's group on its multiple faceted pebble respectively
Part.
The rotation target body is positive six prismsby structure, has four faces to install four cold targets, a face respectively on its six faces
Hot target is installed, faraday's component is installed in a face；The cold target, the order on hot target and faraday's component each side in regular hexagon
Can change.
On the rotation target body be equipped with rotating disk, when chip inject rotation target body can manually rotating disk to each work
Position.
The rotation target body is driven by belt wheel or gear pair by servomotor and is rotated, and may replace above-mentioned manual rotation side
Formula, when such as using band wheel drive, target body is rotated when chip injects can drive synchronous pulley by servomotor, drive synchronous
Band imparts power to another synchronous pulley and rotates to each station.
By said structure, the multistation high/low temperature target platform of the present invention includes rotation target body, and rotation target body is by bearing
Support is fixed on target shell and realizes vacuum insulation with sealing ring, rotary target body sealing ring lower section in vacuum, whole target body with
Target shell insulate.Rotation target body cross section is in preferably regular hexagon layout, wherein four faces are respectively used to fix four cold targets, is used for
Installation needs low temperature to inject chip, and portion's injection liquid nitrogen is cooled down to four cold targets in rotary target body；One hot target, for pacifying
Dress needs high temperature to inject chip；One faraday's component is used to measure target line, to determine whether injection；One heating
Component, for heating to high temperature target.Sweeping device is crossed installed in target chamber bunch porch and is dielectrically separated from target shell, halved tie scan flow
Scope is detected；Suppress electrode to be arranged in behind sweeping device and be dielectrically separated from target shell, suppress line crossing sweeping device product
Raw secondary electron onwards transmission；Overall target platform is connected by vacuum separation valve with bunch system.
The implantation dosage of chip is controlled by the line of measurement rotation target body in ion implanting.
On the basis of target platform described above, it is preferable that rotation target body cross section is in regular polygon layout, so can be increased
Add deduct less cold target, the quantity of hot target, and corresponding heating component also will increase while increasing hot target.
Compared with prior art, the invention has the beneficial effects as follows：
1. allomeric function is complete, it is possible to achieve high temperature, low temperature, room temperature injection, the temperature-controllable of high temperature target can control crystalline substance
Piece implantation dosage；
2. simple structure, structure is easily fabricated and convenient for installation and maintenance.
Below in conjunction with drawings and Examples, the present invention is further elaborated.
Description of the drawings
Fig. 1 is target platform integral layout longitudinal sectional drawing of the present invention；
Fig. 2 is target platform integral layout transverse cross-sectional view of the present invention；
Fig. 3 is rotary target platform layout automatically of the invention；
Fig. 4 is the partial enlarged drawing in Fig. 1 at I.
Specific embodiment
The present invention is further introduced below in conjunction with the accompanying drawings, but it is not as a limitation of the invention.
A kind of multistation high/low temperature target platform, referring to accompanying drawing 1 and Fig. 4, rotation target body 1 is fixed on target shell 3 by bearings
Above and with two sealing rings 17 vacuum insulation is realized, rotation target body 1 is bearing on target shell 3 by bearing 16, integral-rotation target body 1
Below sealing ring in vacuum, whole rotation target body 1 insulate with target shell 3.Rotation target body 1 cross section is in regular hexagon cloth
Office, wherein four faces are respectively used to fix four cold targets 14, the surface of cold target 14 is provided with metal wafer folder, low for installing needs
Temperature injection chip, injects liquid nitrogen and four cold targets 14 is cooled down inside rotation target body 1；One hot target 11, the surface of hot target 11
Being provided with high temperature resistant graphite wafer and pressing from both sides needs high temperature to inject chip for installation；One faraday's component 6 is used to measure target beam
Stream,, mainly by a main cup, the suppression Magnet being arranged symmetrically, one suppresses graphite composition, and function is measurement line size for it
Whether can inject；One heating component 13, heating component uses three halogen lamp tubes, thermocouple and temperature control equipment groups
Into for heating to high temperature target 11.Sweeping device 8 is crossed installed in target chamber bunch porch and is dielectrically separated from target shell, it is by level
Two pairs of graphite electrodes composition of arrangement and vertically arrangement, four electrodes constitute a square opening and mutually insulated, by measuring electricity
The size for extremely going up electric current is detected to sweep limitss；Suppress electrode 9 to be arranged in sweeping device 8 below and with the insulation of target shell every
From suppression line is crossing the generation secondary electron onwards transmission of sweeping device 8；Overall target platform is connected by vacuum separation valve with bunch system
Connect；Shielding cylinder 10 shields impact of the extraneous charged particle to rotary target platform implantation dosage.In ion implanting by measuring rotation
The line of target body 1 controls the implantation dosage of chip.Valut door 2 is used for being target platform clamping chip that rotation target body 1 passes through with target shell 3
Insulation plain cushion 4 insulate, and is overall target shell evacuation pipeline by welded pipe line 7, and pipeline 12 is used as vacuum electrode lead channels.
The content that above-described embodiment is illustrated should be understood to that these embodiments are only used for being illustrated more clearly that the present invention, and not
For limiting the scope of the present invention, after the present invention has been read, the various equivalent form of values of the those skilled in the art to the present invention
Modification fall within the application claims limited range.
Claims (6)
1. a kind of multistation high/low temperature target platform, is characterized in that, including target shell（3）, and it is mounted in target shell（3）It is upper and can be around target shell
（3）The rotation target body of rotation（1）；The rotation target body（1）It is circumferential that multiple cold targets for clamping chip are housed（14）, a method
Draw component（6）The hot target for being used for clamping chip with least one（11）；The hot target（11）Inside it is provided with heating component（13）, institute
State rotation target body（1）Inside it is provided with to cold target（14）The structure for being cooled down；The rotation target body（1）, cold target（14）, hot target（11）
With faraday's component（6）It is placed in vacuum by sealing；The rotation target body（1）Side is provided with halved tie scan flow scope and carries out
The sweeping device excessively of detection（8）, crossing sweeping device（8）With rotation target body（1）Between be provided with the line being injected into line on chip
Injection channel；The line injection channel is externally provided with shielding cylinder（10）；It is described to cross sweeping device（8）With shielding cylinder（10）Between be provided with
Suppress electrode（9）, wherein the suppression electrode（9）It was arranged on sweeping device（8）Rear side and with target shell（3）It is dielectrically separated from.
2. multistation high/low temperature target platform according to claim 1, it is characterised in that the rotation target body（1）With hollow
Inner chamber, the hollow cavity passes through pipeline（5）With the cold target（14）It is connected.
3. multistation high/low temperature target platform according to claim 1, it is characterised in that the rotation target body（1）For prismatic knot
Structure, is equiped with respectively above-mentioned cold target on its multiple faceted pebble（14）, hot target（11）With faraday's component（6）.
4. multistation high/low temperature target platform according to claim 3, it is characterised in that the rotation target body（1）For positive six rib
Rod structure, has four faces to install four cold targets respectively on its six faces（14）, hot target is installed in a face（11）, method is installed in a face
Draw component（6）.
5. multistation high/low temperature target platform according to claim 1, it is characterised in that the rotation target body（1）It is upper that rotation is housed
Rotating disk.
6. multistation high/low temperature target platform according to claim 1, it is characterised in that the rotation target body（1）By servo electricity
Machine（101）Driven by belt wheel or gear pair and rotated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410637727.0A CN104392885B (en) | 2014-11-13 | 2014-11-13 | Multi-station high-low temperature target table |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410637727.0A CN104392885B (en) | 2014-11-13 | 2014-11-13 | Multi-station high-low temperature target table |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104392885A CN104392885A (en) | 2015-03-04 |
| CN104392885B true CN104392885B (en) | 2017-05-10 |
Family
ID=52610768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410637727.0A Active CN104392885B (en) | 2014-11-13 | 2014-11-13 | Multi-station high-low temperature target table |
Country Status (1)
| Country | Link |
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| CN (1) | CN104392885B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735563B (en) * | 2017-04-25 | 2020-12-04 | 北京中科信电子装备有限公司 | Ion implantation terminal device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4806769A (en) * | 1986-05-20 | 1989-02-21 | Fujitsu Limited | Disk exchangeable target mechanism with effective cooling means, for ion implantation system |
| CN101000870A (en) * | 2006-01-13 | 2007-07-18 | 北京中科信电子装备有限公司 | Method and device for controlling ion implantation |
| CN101728205A (en) * | 2008-10-22 | 2010-06-09 | 北京中科信电子装备有限公司 | Target disc cooling device |
| CN103762145A (en) * | 2013-12-23 | 2014-04-30 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110039390A1 (en) * | 2009-08-14 | 2011-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing Local Mismatch of Devices Using Cryo-Implantation |
-
2014
- 2014-11-13 CN CN201410637727.0A patent/CN104392885B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4806769A (en) * | 1986-05-20 | 1989-02-21 | Fujitsu Limited | Disk exchangeable target mechanism with effective cooling means, for ion implantation system |
| CN101000870A (en) * | 2006-01-13 | 2007-07-18 | 北京中科信电子装备有限公司 | Method and device for controlling ion implantation |
| CN101728205A (en) * | 2008-10-22 | 2010-06-09 | 北京中科信电子装备有限公司 | Target disc cooling device |
| CN103762145A (en) * | 2013-12-23 | 2014-04-30 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
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| CN104392885A (en) | 2015-03-04 |
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Effective date of registration: 20220513 Address after: 101111 1st floor, building 1, 6 Xingguang 2nd Street, Tongzhou District, Beijing Patentee after: Beijing Scintillation Section Zhongkexin Electronic Equipment Co.,Ltd. Address before: 101100 No. 6 Xingguang 2nd Street, optical electromechanical integration industrial base, Tongzhou District, Beijing Patentee before: BEIJING ZHONGKEXIN ELECTRONICS EQUIPMENT Co.,Ltd. |
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