DE69209196D1 - Ionen-Implantationsgerät - Google Patents

Ionen-Implantationsgerät

Info

Publication number
DE69209196D1
DE69209196D1 DE69209196T DE69209196T DE69209196D1 DE 69209196 D1 DE69209196 D1 DE 69209196D1 DE 69209196 T DE69209196 T DE 69209196T DE 69209196 T DE69209196 T DE 69209196T DE 69209196 D1 DE69209196 D1 DE 69209196D1
Authority
DE
Germany
Prior art keywords
ion implantation
implantation device
ion
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69209196T
Other languages
English (en)
Other versions
DE69209196T2 (de
Inventor
Atsushi Yoshinouchi
Tatsuo Morita
Shuhei Tsuchimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69209196D1 publication Critical patent/DE69209196D1/de
Application granted granted Critical
Publication of DE69209196T2 publication Critical patent/DE69209196T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69209196T 1991-09-09 1992-09-09 Ionen-Implantationsgerät Expired - Lifetime DE69209196T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3227971A JP2799090B2 (ja) 1991-09-09 1991-09-09 イオン注入装置

Publications (2)

Publication Number Publication Date
DE69209196D1 true DE69209196D1 (de) 1996-04-25
DE69209196T2 DE69209196T2 (de) 1996-10-02

Family

ID=16869129

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209196T Expired - Lifetime DE69209196T2 (de) 1991-09-09 1992-09-09 Ionen-Implantationsgerät

Country Status (4)

Country Link
US (1) US5393986A (de)
EP (1) EP0532283B1 (de)
JP (1) JP2799090B2 (de)
DE (1) DE69209196T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671723B2 (ja) * 1992-07-16 1997-10-29 日新電機株式会社 イオン注入装置
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
US5894133A (en) * 1996-12-18 1999-04-13 Implant Science Corporation Sputter cathode for application of radioactive material
US5834787A (en) * 1997-07-02 1998-11-10 Bunker; Stephen N. Device for measuring flux and accumulated dose for an ion beam containing a radioactive element
US5898178A (en) * 1997-07-02 1999-04-27 Implant Sciences Corporation Ion source for generation of radioactive ion beams
US6300643B1 (en) 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6020592A (en) 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6504159B1 (en) * 1999-09-14 2003-01-07 International Business Machines Corporation SOI plasma source ion implantation
US7309997B1 (en) 2000-09-15 2007-12-18 Varian Semiconductor Equipment Associates, Inc. Monitor system and method for semiconductor processes
JP4326756B2 (ja) * 2002-07-04 2009-09-09 株式会社半導体エネルギー研究所 ドーピング方法、ドーピング装置の制御システム、およびドーピング装置
TWI312645B (en) * 2002-07-11 2009-07-21 Panasonic Corporatio Method and apparatus for plasma doping
US6670624B1 (en) * 2003-03-07 2003-12-30 International Business Machines Corporation Ion implanter in-situ mass spectrometer
JP2005064033A (ja) * 2003-08-12 2005-03-10 Fujio Masuoka 半導体基板へのイオン注入方法
EP1678736A4 (de) * 2003-10-31 2009-01-21 Ventracor Ltd Plasmaimmersions-ionenimplantation durch verwendung eines leitfähigen maschengitters
US7878145B2 (en) 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US20060022147A1 (en) * 2004-08-02 2006-02-02 Nanya Technology Corporation Method and device of monitoring and controlling ion beam energy distribution
US7442631B2 (en) * 2005-02-10 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Doping method and method of manufacturing field effect transistor
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
US8425741B2 (en) 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
US8400063B2 (en) 2006-07-20 2013-03-19 Aviza Technology Limited Plasma sources
CN106770069A (zh) * 2015-11-24 2017-05-31 以恒激光科技（北京）有限公司 电磁加速增强等离子检测系统
US11120973B2 (en) * 2019-05-10 2021-09-14 Applied Materials, Inc. Plasma processing apparatus and techniques

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2956169A (en) * 1956-12-07 1960-10-11 Rutledge F King Ion pulse generation
JPS6020440A (ja) * 1983-07-14 1985-02-01 Tokyo Daigaku イオンビ−ム加工装置
JPH07123121B2 (ja) * 1986-09-24 1995-12-25 松下電器産業株式会社 プラズマ処理装置
JP2516951B2 (ja) * 1987-02-06 1996-07-24 松下電器産業株式会社 半導体装置の製造方法
JPH02276146A (ja) * 1989-04-18 1990-11-13 Matsushita Electric Ind Co Ltd イオン照射装置
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus

Also Published As

Publication number Publication date
US5393986A (en) 1995-02-28
EP0532283A1 (de) 1993-03-17
DE69209196T2 (de) 1996-10-02
JP2799090B2 (ja) 1998-09-17
EP0532283B1 (de) 1996-03-20
JPH0567450A (ja) 1993-03-19

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Legal Events

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Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

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