DE69026751D1 - Ionenbündelfokussierungsvorrichtung - Google Patents

Ionenbündelfokussierungsvorrichtung

Info

Publication number
DE69026751D1
DE69026751D1 DE69026751T DE69026751T DE69026751D1 DE 69026751 D1 DE69026751 D1 DE 69026751D1 DE 69026751 T DE69026751 T DE 69026751T DE 69026751 T DE69026751 T DE 69026751T DE 69026751 D1 DE69026751 D1 DE 69026751D1
Authority
DE
Germany
Prior art keywords
ion beam
focusing device
beam focusing
ion
focusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026751T
Other languages
English (en)
Other versions
DE69026751T2 (de
Inventor
Yutaka Kawata
Ken-Ichi Inoue
Kiyotaka Ishibashi
Akira Kobayashi
Koji Inoue
Norio Suzuki
Akio Arai
Kaneo Yamada
Keizo Tokushige
Hirofumi Fukuyama
Shigeto Adachi
Yukito Furukawa
Sunao Takahashi
Makoto Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1206457A external-priority patent/JPH07118288B2/ja
Priority claimed from JP1302392A external-priority patent/JPH0640477B2/ja
Priority claimed from JP2004841A external-priority patent/JPH0644468B2/ja
Priority claimed from JP2013284A external-priority patent/JP2825900B2/ja
Priority claimed from JP2057501A external-priority patent/JPH03257751A/ja
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of DE69026751D1 publication Critical patent/DE69026751D1/de
Application granted granted Critical
Publication of DE69026751T2 publication Critical patent/DE69026751T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE69026751T 1989-05-17 1990-05-17 Ionenbündelfokussierungsvorrichtung Expired - Fee Related DE69026751T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP12537389 1989-05-17
JP1206457A JPH07118288B2 (ja) 1989-08-08 1989-08-08 平行荷電ビーム成形レンズ
JP1302392A JPH0640477B2 (ja) 1989-05-17 1989-11-20 集束イオンビーム装置
JP2004841A JPH0644468B2 (ja) 1990-01-11 1990-01-11 荷電粒子ビーム用スリツト
JP2013284A JP2825900B2 (ja) 1990-01-22 1990-01-22 高精度四重極磁気レンズおよびその製造方法
JP2057501A JPH03257751A (ja) 1990-03-07 1990-03-07 イオンビーム分析装置の試料チャンバ

Publications (2)

Publication Number Publication Date
DE69026751D1 true DE69026751D1 (de) 1996-06-05
DE69026751T2 DE69026751T2 (de) 1996-11-14

Family

ID=27547874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026751T Expired - Fee Related DE69026751T2 (de) 1989-05-17 1990-05-17 Ionenbündelfokussierungsvorrichtung

Country Status (3)

Country Link
US (1) US5063294A (de)
EP (1) EP0398335B1 (de)
DE (1) DE69026751T2 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
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JP3235681B2 (ja) * 1991-12-25 2001-12-04 株式会社神戸製鋼所 イオンビーム分析装置
GB9210887D0 (en) * 1992-05-21 1992-07-08 Superion Ltd Resolving slit assembly and method of ion implantation
US5313067A (en) * 1992-05-27 1994-05-17 Iowa State University Research Foundation, Inc. Ion processing apparatus including plasma ion source and mass spectrometer for ion deposition, ion implantation, or isotope separation
US5760405A (en) * 1996-02-16 1998-06-02 Eaton Corporation Plasma chamber for controlling ion dosage in ion implantation
US5852270A (en) * 1996-07-16 1998-12-22 Leybold Inficon Inc. Method of manufacturing a miniature quadrupole using electrode-discharge machining
US6828566B2 (en) * 1997-07-22 2004-12-07 Hitachi Ltd Method and apparatus for specimen fabrication
US6115452A (en) * 1998-01-08 2000-09-05 The Regents Of The University Of California X-ray radiography with highly charged ions
US6060718A (en) * 1998-02-26 2000-05-09 Eaton Corporation Ion source having wide output current operating range
US6207964B1 (en) * 1999-02-19 2001-03-27 Axcelis Technologies, Inc. Continuously variable aperture for high-energy ion implanter
AU755928B2 (en) * 1999-09-27 2003-01-02 Hitachi Limited Apparatus for charged-particle beam irradiation, and method of control thereof
US6555832B1 (en) 1999-10-13 2003-04-29 Applied Materials, Inc. Determining beam alignment in ion implantation using Rutherford Back Scattering
US7557360B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7511280B2 (en) 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7601953B2 (en) * 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US7485873B2 (en) * 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7554097B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7488952B2 (en) * 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7504639B2 (en) 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7557358B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7521693B2 (en) * 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
US7518122B2 (en) * 2003-10-16 2009-04-14 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7495232B2 (en) * 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
JP2007523759A (ja) * 2003-12-17 2007-08-23 ユーニヴァーサティ、アヴ、ノース、テクサス ナノ構造材料に元素、化学種および組成物を注入するための装置および方法
JP5033314B2 (ja) * 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
US7423262B2 (en) * 2005-11-14 2008-09-09 Agilent Technologies, Inc. Precision segmented ion trap
TW200737267A (en) * 2006-03-20 2007-10-01 Alis Corp Systems and methods for a helium ion pump
JP4205122B2 (ja) * 2006-07-19 2009-01-07 株式会社日立ハイテクノロジーズ 荷電粒子線加工装置
EP1883094B1 (de) * 2006-07-24 2012-05-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Teilchenstrahlapparat und Verfahren zur Untersuchung einer Probe
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
EP1956630A1 (de) * 2007-02-06 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Achromatischer Massenseparator
KR101052361B1 (ko) * 2008-07-31 2011-07-27 한국표준과학연구원 중에너지 이온빔 산란을 이용한 분광분석기
WO2010019968A2 (en) * 2008-08-15 2010-02-18 John Ruffell Systems and methods for scanning a beam of charged particles
US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
CN107195518A (zh) * 2017-06-22 2017-09-22 京东方科技集团股份有限公司 离子注入量调节装置及方法、离子注入设备、判断方法
US10319572B2 (en) 2017-09-28 2019-06-11 Northrop Grumman Systems Corporation Space ion analyzer with mass spectrometer on a chip (MSOC) using floating MSOC voltages
DE102018004020A1 (de) * 2018-05-18 2019-11-21 Forschungszentrum Jülich GmbH MeV-basierte Ionenstrahl-Analytikanlage
US20200152437A1 (en) 2018-11-14 2020-05-14 Northrop Grumman Systems Corporation Tapered magnetic ion transport tunnel for particle collection
US10755827B1 (en) 2019-05-17 2020-08-25 Northrop Grumman Systems Corporation Radiation shield

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585397A (en) * 1968-10-04 1971-06-15 Hughes Aircraft Co Programmed fine ion implantation beam system
DE2222736A1 (de) * 1972-05-09 1973-11-22 Siemens Ag Verfahren zur ionenimplantation
GB1530449A (en) * 1975-11-13 1978-11-01 Mel Equipment Co Ltd Electron beam collimator
WO1982004351A1 (en) * 1981-05-26 1982-12-09 Aircraft Co Hughes Focused ion beam microfabrication column
US4550258A (en) * 1982-07-27 1985-10-29 Nippon Telegraph & Telephone Public Corporation Aperture structure for charged beam exposure
JPS6062045A (ja) * 1983-09-14 1985-04-10 Hitachi Ltd イオンマイクロビ−ム打込み装置
JPH06101318B2 (ja) * 1985-10-16 1994-12-12 株式会社日立製作所 イオンマイクロビ−ム装置
AT391771B (de) * 1987-03-05 1990-11-26 Ims Ionen Mikrofab Syst Einrichtung zur verkleinernden oder 1 : 1 ionenprojektionslithographie
CA1317035C (en) * 1989-01-25 1993-04-27 Matthias Brunner Method for examining a specimen in a particle beam instrument

Also Published As

Publication number Publication date
US5063294A (en) 1991-11-05
EP0398335A3 (de) 1992-04-15
DE69026751T2 (de) 1996-11-14
EP0398335A2 (de) 1990-11-22
EP0398335B1 (de) 1996-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee