DE68916776D1 - Einen Ionenstrahl mit gleichmässigem Querschnitt verwendende Vorrichtung. - Google Patents
Einen Ionenstrahl mit gleichmässigem Querschnitt verwendende Vorrichtung.Info
- Publication number
- DE68916776D1 DE68916776D1 DE68916776T DE68916776T DE68916776D1 DE 68916776 D1 DE68916776 D1 DE 68916776D1 DE 68916776 T DE68916776 T DE 68916776T DE 68916776 T DE68916776 T DE 68916776T DE 68916776 D1 DE68916776 D1 DE 68916776D1
- Authority
- DE
- Germany
- Prior art keywords
- section
- ion beam
- uniform cross
- uniform
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/293,334 US4914305A (en) | 1989-01-04 | 1989-01-04 | Uniform cross section ion beam system |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68916776D1 true DE68916776D1 (de) | 1994-08-18 |
DE68916776T2 DE68916776T2 (de) | 1995-03-02 |
Family
ID=23128659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68916776T Expired - Fee Related DE68916776T2 (de) | 1989-01-04 | 1989-12-18 | Einen Ionenstrahl mit gleichmässigem Querschnitt verwendende Vorrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4914305A (de) |
EP (1) | EP0377298B1 (de) |
JP (1) | JP2873704B2 (de) |
KR (1) | KR960003496B1 (de) |
DE (1) | DE68916776T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2648642B2 (ja) * | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | 巾広ビームでイオンインプランテーションを行なう方法及び装置 |
GB9021629D0 (en) * | 1990-10-04 | 1990-11-21 | Superion Ltd | Apparatus for and method of producing ion beams |
US5134299A (en) * | 1991-03-13 | 1992-07-28 | Eaton Corporation | Ion beam implantation method and apparatus for particulate control |
US5218210A (en) * | 1992-02-18 | 1993-06-08 | Eaton Corporation | Broad beam flux density control |
US5280174A (en) * | 1993-01-25 | 1994-01-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and apparatus for producing a thermal atomic oxygen beam |
US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
KR100249307B1 (ko) * | 1997-05-13 | 2000-03-15 | 윤종용 | 이온주입설비의 분석기 |
US6060715A (en) * | 1997-10-31 | 2000-05-09 | Applied Materials, Inc. | Method and apparatus for ion beam scanning in an ion implanter |
US6949895B2 (en) * | 2003-09-03 | 2005-09-27 | Axcelis Technologies, Inc. | Unipolar electrostatic quadrupole lens and switching methods for charged beam transport |
US7285779B2 (en) | 2004-06-21 | 2007-10-23 | Applied Materials Israel, Ltd. | Methods of scanning an object that includes multiple regions of interest using an array of scanning beams |
US7019314B1 (en) | 2004-10-18 | 2006-03-28 | Axcelis Technologies, Inc. | Systems and methods for ion beam focusing |
US7598505B2 (en) * | 2005-03-08 | 2009-10-06 | Axcelis Technologies, Inc. | Multichannel ion gun |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
US7928413B2 (en) * | 2008-01-03 | 2011-04-19 | Applied Materials, Inc. | Ion implanters |
JP5988570B2 (ja) * | 2010-12-31 | 2016-09-07 | エフ・イ−・アイ・カンパニー | 選択可能な複数の粒子放出器を備える荷電粒子源 |
JP7132828B2 (ja) * | 2018-11-13 | 2022-09-07 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置およびビームパーク装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3547074A (en) * | 1967-04-13 | 1970-12-15 | Block Engineering | Apparatus for forming microelements |
US3795833A (en) * | 1972-05-25 | 1974-03-05 | Hughes Aircraft Co | Ion beam deflection system |
US3845312A (en) * | 1972-07-13 | 1974-10-29 | Texas Instruments Inc | Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density |
FR2537768A1 (fr) * | 1982-12-08 | 1984-06-15 | Commissariat Energie Atomique | Procede et dispositif d'obtention de faisceaux de particules de densite spatialement modulee, application a la gravure et a l'implantation ioniques |
US4578589A (en) * | 1983-08-15 | 1986-03-25 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US4522657A (en) * | 1983-10-20 | 1985-06-11 | Westinghouse Electric Corp. | Low temperature process for annealing shallow implanted N+/P junctions |
US4523971A (en) * | 1984-06-28 | 1985-06-18 | International Business Machines Corporation | Programmable ion beam patterning system |
DE3504714A1 (de) * | 1985-02-12 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | Lithografiegeraet zur erzeugung von mikrostrukturen |
-
1989
- 1989-01-04 US US07/293,334 patent/US4914305A/en not_active Expired - Lifetime
- 1989-12-18 DE DE68916776T patent/DE68916776T2/de not_active Expired - Fee Related
- 1989-12-18 EP EP89313242A patent/EP0377298B1/de not_active Expired - Lifetime
- 1989-12-28 JP JP1345040A patent/JP2873704B2/ja not_active Expired - Fee Related
-
1990
- 1990-01-04 KR KR1019900000029A patent/KR960003496B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0377298A3 (de) | 1991-02-27 |
US4914305A (en) | 1990-04-03 |
JP2873704B2 (ja) | 1999-03-24 |
KR900012339A (ko) | 1990-08-03 |
EP0377298A2 (de) | 1990-07-11 |
EP0377298B1 (de) | 1994-07-13 |
KR960003496B1 (ko) | 1996-03-14 |
DE68916776T2 (de) | 1995-03-02 |
JPH02226645A (ja) | 1990-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |