DE69022372D1 - Rastermechanismus für Ionenimplantierungsgerät. - Google Patents

Rastermechanismus für Ionenimplantierungsgerät.

Info

Publication number
DE69022372D1
DE69022372D1 DE69022372T DE69022372T DE69022372D1 DE 69022372 D1 DE69022372 D1 DE 69022372D1 DE 69022372 T DE69022372 T DE 69022372T DE 69022372 T DE69022372 T DE 69022372T DE 69022372 D1 DE69022372 D1 DE 69022372D1
Authority
DE
Germany
Prior art keywords
ion implantation
implantation device
grid mechanism
grid
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69022372T
Other languages
English (en)
Other versions
DE69022372T2 (de
Inventor
Donald W Berrian
Robert E Kaim
John W Vanderpot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23716301&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69022372(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of DE69022372D1 publication Critical patent/DE69022372D1/de
Application granted granted Critical
Publication of DE69022372T2 publication Critical patent/DE69022372T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69022372T 1989-11-07 1990-11-07 Rastermechanismus für Ionenimplantierungsgerät. Expired - Fee Related DE69022372T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/432,470 US4980562A (en) 1986-04-09 1989-11-07 Method and apparatus for high efficiency scanning in an ion implanter

Publications (2)

Publication Number Publication Date
DE69022372D1 true DE69022372D1 (de) 1995-10-19
DE69022372T2 DE69022372T2 (de) 1996-03-14

Family

ID=23716301

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022372T Expired - Fee Related DE69022372T2 (de) 1989-11-07 1990-11-07 Rastermechanismus für Ionenimplantierungsgerät.

Country Status (5)

Country Link
US (1) US4980562A (de)
EP (1) EP0431757B1 (de)
JP (1) JP3374857B2 (de)
KR (1) KR0183011B1 (de)
DE (1) DE69022372T2 (de)

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US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
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US5629528A (en) * 1996-01-16 1997-05-13 Varian Associates, Inc. Charged particle beam system having beam-defining slit formed by rotating cyclinders
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
US5981961A (en) * 1996-03-15 1999-11-09 Applied Materials, Inc. Apparatus and method for improved scanning efficiency in an ion implanter
US6022258A (en) * 1996-03-27 2000-02-08 Thermoceramix, Llc ARC chamber for an ion implantation system
US5914494A (en) * 1996-03-27 1999-06-22 Thermoceramix, Llc Arc chamber for an ion implantation system
US6239440B1 (en) 1996-03-27 2001-05-29 Thermoceramix, L.L.C. Arc chamber for an ion implantation system
US5857889A (en) * 1996-03-27 1999-01-12 Thermoceramix, Llc Arc Chamber for an ion implantation system
US5859437A (en) * 1997-03-17 1999-01-12 Taiwan Semiconductor Manufacturing Corporation Intelligent supervision system with expert system for ion implantation process
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US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
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US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
US6403972B1 (en) * 1999-07-08 2002-06-11 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for alignment of ion beam systems using beam current sensors
GB2355337B (en) * 1999-10-12 2004-04-14 Applied Materials Inc Ion implanter and beam stop therefor
JP3414337B2 (ja) * 1999-11-12 2003-06-09 日新電機株式会社 電磁界レンズの制御方法およびイオン注入装置
US6946667B2 (en) * 2000-03-01 2005-09-20 Advanced Ion Beam Technology, Inc. Apparatus to decelerate and control ion beams to improve the total quality of ion implantation
US6677599B2 (en) * 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
KR100815635B1 (ko) 2000-05-15 2008-03-20 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업편에 이온을 주입하기 위한 방법 및 이온 주입 장치
AU2001270133A1 (en) 2000-06-22 2002-01-02 Proteros, Llc Ion implantation uniformity correction using beam current control
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US7547460B2 (en) * 2000-09-15 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Ion implanter optimizer scan waveform retention and recovery
US6723998B2 (en) 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
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US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
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US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
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US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling
US20060113489A1 (en) * 2004-11-30 2006-06-01 Axcelis Technologies, Inc. Optimization of beam utilization
US7208330B2 (en) * 2005-01-12 2007-04-24 Texas Instruments Incorporated Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate
US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
US7355188B2 (en) * 2005-05-24 2008-04-08 Varian Semiconductor Equipment Associates, Inc. Technique for uniformity tuning in an ion implanter system
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
JP4476975B2 (ja) * 2005-10-25 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
US7176470B1 (en) 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
US7342240B2 (en) * 2006-02-24 2008-03-11 Varian Semiconductor Equipment Associates, Inc. Ion beam current monitoring
US7863157B2 (en) 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
WO2007118121A2 (en) 2006-04-05 2007-10-18 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
TWI435378B (zh) * 2006-04-26 2014-04-21 Axcelis Tech Inc 劑量均勻性校正方法
JP5085887B2 (ja) 2006-05-30 2012-11-28 株式会社Ｓｅｎ ビーム処理装置及びビーム処理方法
US7498590B2 (en) * 2006-06-23 2009-03-03 Varian Semiconductor Equipment Associates, Inc. Scan pattern for an ion implanter
US8153513B2 (en) 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7566886B2 (en) * 2006-08-14 2009-07-28 Axcelis Technologies, Inc. Throughput enhancement for scanned beam ion implanters
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
JP4285547B2 (ja) * 2007-01-22 2009-06-24 日新イオン機器株式会社 ビーム電流波形の測定方法および測定装置
JP5242937B2 (ja) * 2007-04-10 2013-07-24 株式会社Ｓｅｎ イオン注入装置及びイオン注入方法
US7772571B2 (en) * 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
US7807984B2 (en) * 2008-01-02 2010-10-05 Applied Materials, Inc. Ion implanters
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
JP5448586B2 (ja) * 2009-06-05 2014-03-19 キヤノン株式会社 光学素子の製造方法
US20110272567A1 (en) * 2010-05-05 2011-11-10 Axcelis Technologies, Inc. Throughput Enhancement for Scanned Beam Ion Implanters
US20120126137A1 (en) * 2010-11-19 2012-05-24 Advanced Ion Beam Technology, Inc. Ion implantation method and ion implanter
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
JP5638995B2 (ja) * 2011-03-28 2014-12-10 株式会社Ｓｅｎ イオン注入方法及びイオン注入装置
JP5591191B2 (ja) * 2011-08-09 2014-09-17 住友重機械工業株式会社 イオン注入装置、イオンビーム計測装置、及びイオンビームの計測方法
US8581204B2 (en) 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
JP5904895B2 (ja) * 2012-07-12 2016-04-20 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
US9263231B2 (en) 2013-10-10 2016-02-16 Varian Semiconductor Equipment Associates, Inc. Moveable current sensor for increasing ion beam utilization during ion implantation
US9218941B2 (en) 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
US9111719B1 (en) * 2014-01-30 2015-08-18 Axcelis Technologies, Inc. Method for enhancing beam utilization in a scanned beam ion implanter
JP6195538B2 (ja) 2014-04-25 2017-09-13 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
DE102018120630B3 (de) * 2018-08-23 2019-10-31 Carl Zeiss Microscopy Gmbh Verfahren zum Bearbeiten eines Objekts und Programm zur Steuerung eines Partikelstrahlsystems
US20230038392A1 (en) 2021-08-05 2023-02-09 Axcelis Technologies, Inc. Blended energy ion implantation
CN117941024A (zh) 2021-08-05 2024-04-26 艾克塞利斯科技公司 混合能量离子注入

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Also Published As

Publication number Publication date
KR910010672A (ko) 1991-06-29
DE69022372T2 (de) 1996-03-14
EP0431757A2 (de) 1991-06-12
JP3374857B2 (ja) 2003-02-10
EP0431757B1 (de) 1995-09-13
KR0183011B1 (ko) 1999-03-20
US4980562A (en) 1990-12-25
JPH03241651A (ja) 1991-10-28
EP0431757A3 (en) 1991-12-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N.

8339 Ceased/non-payment of the annual fee