DE69408017D1 - Ionen implantierer - Google Patents

Ionen implantierer

Info

Publication number
DE69408017D1
DE69408017D1 DE69408017T DE69408017T DE69408017D1 DE 69408017 D1 DE69408017 D1 DE 69408017D1 DE 69408017 T DE69408017 T DE 69408017T DE 69408017 T DE69408017 T DE 69408017T DE 69408017 D1 DE69408017 D1 DE 69408017D1
Authority
DE
Germany
Prior art keywords
ion implanter
implanter
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69408017T
Other languages
English (en)
Other versions
DE69408017T2 (de
Inventor
Nicholas R White
Manny Sieradzki
Anthony Renau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Diamond Semiconductor Group Inc
Original Assignee
Diamond Semiconductor Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diamond Semiconductor Group Inc filed Critical Diamond Semiconductor Group Inc
Publication of DE69408017D1 publication Critical patent/DE69408017D1/de
Application granted granted Critical
Publication of DE69408017T2 publication Critical patent/DE69408017T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69408017T 1993-03-11 1994-03-10 Ionen implantierer Expired - Lifetime DE69408017T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/029,766 US5350926A (en) 1993-03-11 1993-03-11 Compact high current broad beam ion implanter

Publications (2)

Publication Number Publication Date
DE69408017D1 true DE69408017D1 (de) 1998-02-26
DE69408017T2 DE69408017T2 (de) 1998-07-23

Family

ID=21850764

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69408017T Expired - Lifetime DE69408017T2 (de) 1993-03-11 1994-03-10 Ionen implantierer

Country Status (4)

Country Link
US (1) US5350926A (de)
EP (1) EP0621628B1 (de)
JP (1) JP2878112B2 (de)
DE (1) DE69408017T2 (de)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
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US5563418A (en) * 1995-02-17 1996-10-08 Regents, University Of California Broad beam ion implanter
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US5554857A (en) * 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
KR970052183A (ko) * 1995-12-30 1997-07-29 김주용 이온 빔 각도 조정이 가능한 이온 주입기
US5691537A (en) * 1996-01-22 1997-11-25 Chen; John Method and apparatus for ion beam transport
US5981961A (en) * 1996-03-15 1999-11-09 Applied Materials, Inc. Apparatus and method for improved scanning efficiency in an ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
JP3376857B2 (ja) * 1997-05-07 2003-02-10 日新電機株式会社 イオン注入装置
JP3449198B2 (ja) * 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
KR20010043738A (ko) 1998-05-22 2001-05-25 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 저 에너지 이온 주입을 위한 방법 및 장치
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6075249A (en) * 1998-06-19 2000-06-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanning and focusing an ion beam
US6998625B1 (en) 1999-06-23 2006-02-14 Varian Semiconductor Equipment Associates, Inc. Ion implanter having two-stage deceleration beamline
US6635880B1 (en) 1999-10-05 2003-10-21 Varian Semiconductor Equipment Associates, Inc. High transmission, low energy beamline architecture for ion implanter
US6885014B2 (en) * 2002-05-01 2005-04-26 Axcelis Technologies, Inc. Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
US6437350B1 (en) * 2000-08-28 2002-08-20 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting beam parallelism in ion implanters
US7309997B1 (en) 2000-09-15 2007-12-18 Varian Semiconductor Equipment Associates, Inc. Monitor system and method for semiconductor processes
US6573518B1 (en) 2000-10-30 2003-06-03 Varian Semiconductor Equipment Associates, Inc. Bi mode ion implantation with non-parallel ion beams
EP1336190A2 (de) 2000-11-22 2003-08-20 Varian Semiconductor Equipment Associates Inc. Hybride rastervorrichtung und ionenimplantierungsverfahren
JP4848528B2 (ja) * 2000-12-28 2011-12-28 株式会社Ｉｈｉ イオン質量分離方法及び装置、並びにイオンドーピング装置
WO2002058103A2 (en) * 2001-01-17 2002-07-25 Varian Semiconductor Equipment Associates, Inc. In situ ion beam incidence angle and beam divergence monitor
WO2002058102A2 (en) 2001-01-18 2002-07-25 Varian Semiconductor Equipment Associates, Inc. Adjustable conductance limiting aperture for ion implanters
US6710359B2 (en) * 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US6716727B2 (en) 2001-10-26 2004-04-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US20030079688A1 (en) * 2001-10-26 2003-05-01 Walther Steven R. Methods and apparatus for plasma doping by anode pulsing
US20030101935A1 (en) * 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
CN102915899B (zh) * 2002-02-28 2016-03-16 瓦里安半导体设备联合公司 在离子注入器中调节离子束平行的方法和设备
US6822246B2 (en) 2002-03-27 2004-11-23 Kla-Tencor Technologies Corporation Ribbon electron beam for inspection system
US6664547B2 (en) 2002-05-01 2003-12-16 Axcelis Technologies, Inc. Ion source providing ribbon beam with controllable density profile
US6664548B2 (en) 2002-05-01 2003-12-16 Axcelis Technologies, Inc. Ion source and coaxial inductive coupler for ion implantation system
US6777695B2 (en) 2002-07-12 2004-08-17 Varian Semiconductors Equipment Associates, Inc. Rotating beam ion implanter
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
US6762423B2 (en) * 2002-11-05 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
WO2004053943A2 (en) * 2002-12-11 2004-06-24 Purser Kenneth H Emittance measuring device for ion beams
JP2004288549A (ja) * 2003-03-24 2004-10-14 Mitsui Eng & Shipbuild Co Ltd イオン注入装置
US6677598B1 (en) * 2003-04-29 2004-01-13 Axcelis Technologies, Inc. Beam uniformity and angular distribution measurement system
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US20050061997A1 (en) * 2003-09-24 2005-03-24 Benveniste Victor M. Ion beam slit extraction with mass separation
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
WO2005060602A2 (en) * 2003-12-12 2005-07-07 Semequip, Inc. Controlling the flow of vapors sublimated from solids
JP2005174870A (ja) * 2003-12-15 2005-06-30 Mitsui Eng & Shipbuild Co Ltd イオン注入方法及びイオン注入装置
JP2005285518A (ja) * 2004-03-29 2005-10-13 Toshiba Corp イオン注入装置およびイオン注入方法
US7078714B2 (en) * 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
US7902527B2 (en) * 2004-05-18 2011-03-08 Jiong Chen Apparatus and methods for ion beam implantation using ribbon and spot beams
US7675050B2 (en) * 2006-06-12 2010-03-09 Advanced Ion Beam Technology, Inc. Apparatus and method for ion beam implantation using ribbon and spot beams
WO2006060378A2 (en) * 2004-11-30 2006-06-08 Purser Kenneth H Broad energy-range ribbon ion beam collimation using a variable-gradient dipole
US7462844B2 (en) * 2005-09-30 2008-12-09 Varian Semiconductor Equipment Associates, Inc. Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation
JP4997756B2 (ja) 2005-12-20 2012-08-08 日新イオン機器株式会社 イオンビーム照射装置およびビーム均一性調整方法
US7525103B2 (en) * 2006-01-20 2009-04-28 Varian Semiconductor Equipment Associates, Inc. Technique for improving uniformity of a ribbon beam
US7394079B2 (en) * 2006-01-27 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Architecture for ribbon ion beam ion implanter system
US8853065B2 (en) * 2006-05-16 2014-10-07 Cree, Inc. Methods for fabricating semiconductor devices having reduced implant contamination
US7608521B2 (en) * 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
WO2007146985A2 (en) * 2006-06-13 2007-12-21 Semequip, Inc. Magnetic analyzer apparatus and method for ion implantation
KR20140018392A (ko) * 2006-06-13 2014-02-12 세미이큅, 인코포레이티드 이온 빔 장치와 자기 스캐닝을 채용한 방법
US8450193B2 (en) * 2006-08-15 2013-05-28 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature-controlled ion implantation
WO2008021501A2 (en) * 2006-08-18 2008-02-21 Piero Sferlazzo Apparatus and method for ultra-shallow implantation in a semiconductor device
US7528390B2 (en) * 2006-09-29 2009-05-05 Axcelis Technologies, Inc. Broad beam ion implantation architecture
US7619228B2 (en) * 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US7619229B2 (en) * 2006-10-16 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
US7547900B2 (en) * 2006-12-22 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a ribbon-shaped gas cluster ion beam
US7576337B2 (en) * 2007-01-05 2009-08-18 Varian Semiconductor Equipment Associates, Inc. Power supply for an ion implantation system
US7875125B2 (en) 2007-09-21 2011-01-25 Semequip, Inc. Method for extending equipment uptime in ion implantation
US7772571B2 (en) * 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
US20090121122A1 (en) * 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Techniques for measuring and controlling ion beam angle and density uniformity
US8003498B2 (en) * 2007-11-13 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
JP4365441B2 (ja) 2008-03-31 2009-11-18 三井造船株式会社 イオン注入装置、イオン注入方法及びプログラム
US9368935B2 (en) * 2008-04-28 2016-06-14 Northrop Grumman Systems Corporation Method for mode control in multimode semiconductor waveguide lasers
US7687786B2 (en) * 2008-05-16 2010-03-30 Twin Creeks Technologies, Inc. Ion implanter for noncircular wafers
US7858955B2 (en) * 2008-06-25 2010-12-28 Axcelis Technologies, Inc. System and method of controlling broad beam uniformity
JP5177658B2 (ja) * 2008-08-11 2013-04-03 株式会社Ｉｈｉ ビームプロファイル調整装置とこれを備えるイオン注入装置
US20110186748A1 (en) * 2008-08-15 2011-08-04 John Ruffell Systems And Methods For Scanning A Beam Of Charged Particles
US7897945B2 (en) * 2008-09-25 2011-03-01 Twin Creeks Technologies, Inc. Hydrogen ion implanter using a broad beam source
KR100933011B1 (ko) * 2008-12-17 2009-12-21 한국원자력연구원 이온 주입기용 고전압 전원장치
US7858430B2 (en) * 2008-12-18 2010-12-28 Twin Creeks Technologies, Inc. Method for making a photovoltaic cell comprising contact regions doped through a lamina
US8227763B2 (en) * 2009-03-25 2012-07-24 Twin Creeks Technologies, Inc. Isolation circuit for transmitting AC power to a high-voltage region
CN101899645B (zh) * 2009-06-01 2014-05-21 无锡华润上华半导体有限公司 一种离子注入方法
US7989784B2 (en) * 2009-06-30 2011-08-02 Twin Creeks Technologies, Inc. Ion implantation apparatus and a method
US7982197B2 (en) * 2009-06-30 2011-07-19 Twin Creeks Technologies, Inc. Ion implantation apparatus and a method for fluid cooling
US7939812B2 (en) * 2009-06-30 2011-05-10 Twin Creeks Technologies, Inc. Ion source assembly for ion implantation apparatus and a method of generating ions therein
US8044374B2 (en) * 2009-06-30 2011-10-25 Twin Creeks Technologies, Inc. Ion implantation apparatus
US8324599B2 (en) * 2009-09-29 2012-12-04 Twin Creeks Technologies, Inc. Ion implantation apparatus
US8426829B2 (en) * 2009-09-29 2013-04-23 Gtat Corporation Ion implantation apparatus
US8089050B2 (en) * 2009-11-19 2012-01-03 Twin Creeks Technologies, Inc. Method and apparatus for modifying a ribbon-shaped ion beam
US8049192B2 (en) * 2009-12-24 2011-11-01 Varian Semiconductor Equipment Associates, Inc. Apparatus and system for controlling ion ribbon beam uniformity in an ion implanter
US20110207306A1 (en) * 2010-02-22 2011-08-25 Sarko Cherekdjian Semiconductor structure made using improved ion implantation process
CN101901734B (zh) * 2010-04-07 2012-07-18 胡新平 多模式离子注入机系统及注入调节方法
JP5041260B2 (ja) * 2010-06-04 2012-10-03 日新イオン機器株式会社 イオン注入装置
US20120056107A1 (en) * 2010-09-08 2012-03-08 Varian Semiconductor Equipment Associates, Inc. Uniformity control using ion beam blockers
US8461556B2 (en) 2010-09-08 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Using beam blockers to perform a patterned implant of a workpiece
KR101915753B1 (ko) * 2010-10-21 2018-11-07 삼성디스플레이 주식회사 이온 주입 시스템 및 이를 이용한 이온 주입 방법
US8558195B2 (en) 2010-11-19 2013-10-15 Corning Incorporated Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process
US8196546B1 (en) 2010-11-19 2012-06-12 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process
US8008175B1 (en) 2010-11-19 2011-08-30 Coring Incorporated Semiconductor structure made using improved simultaneous multiple ion implantation process
US8378312B1 (en) * 2011-08-19 2013-02-19 Pyramid Technical Consultants, Inc. System, apparatus and method for deflecting a particle beam
JP2013236053A (ja) * 2012-04-13 2013-11-21 Canon Inc 荷電粒子光学系、描画装置及び物品の製造方法
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JP2014041707A (ja) * 2012-08-21 2014-03-06 Nissin Ion Equipment Co Ltd イオン注入装置
US9340870B2 (en) * 2013-01-25 2016-05-17 Advanced Ion Beam Technology, Inc. Magnetic field fluctuation for beam smoothing
US9502213B2 (en) 2013-03-15 2016-11-22 Nissin Ion Equipment Co., Ltd. Ion beam line
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US9269528B2 (en) * 2013-10-15 2016-02-23 Adavanced Ion Beam Technology, Inc. Medium current ribbon beam for ion implantation
US8884244B1 (en) * 2013-10-22 2014-11-11 Varian Semiconductor Equipment Associates, Inc. Dual mode ion implanter
US9269538B2 (en) 2014-03-21 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control using ion beam blockers
JP6388520B2 (ja) * 2014-10-17 2018-09-12 住友重機械イオンテクノロジー株式会社 ビーム引出スリット構造、イオン源、及びイオン注入装置
US9697988B2 (en) * 2015-10-14 2017-07-04 Advanced Ion Beam Technology, Inc. Ion implantation system and process
DE102017117999A1 (de) * 2017-08-08 2019-02-14 Infineon Technologies Ag Ionenimplantationsvorrichtung und verfahren zum herstellen vonhalbleitervorrichtungen
CN111769039B (zh) * 2019-04-02 2023-07-04 北京中科信电子装备有限公司 一种低能大束流离子注入机均匀性调节的方法
US20210166946A1 (en) * 2019-12-02 2021-06-03 Applied Materials, Inc. Apparatus and techniques for substrate processing using independent ion source and radical source

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Also Published As

Publication number Publication date
JPH06342639A (ja) 1994-12-13
US5350926A (en) 1994-09-27
EP0621628B1 (de) 1998-01-21
EP0621628A1 (de) 1994-10-26
DE69408017T2 (de) 1998-07-23
JP2878112B2 (ja) 1999-04-05

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