DE69401363D1 - Spannungsreduzierschaltung zur Verwendung in einer integrierten Halbleiterschaltung - Google Patents

Spannungsreduzierschaltung zur Verwendung in einer integrierten Halbleiterschaltung

Info

Publication number
DE69401363D1
DE69401363D1 DE69401363T DE69401363T DE69401363D1 DE 69401363 D1 DE69401363 D1 DE 69401363D1 DE 69401363 T DE69401363 T DE 69401363T DE 69401363 T DE69401363 T DE 69401363T DE 69401363 D1 DE69401363 D1 DE 69401363D1
Authority
DE
Germany
Prior art keywords
circuit
semiconductor integrated
voltage reducing
integrated circuit
reducing circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69401363T
Other languages
English (en)
Other versions
DE69401363T2 (de
Inventor
Akira Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69401363D1 publication Critical patent/DE69401363D1/de
Application granted granted Critical
Publication of DE69401363T2 publication Critical patent/DE69401363T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H19/00—Networks using time-varying elements, e.g. N-path filters
    • H03H19/004—Switched capacitor networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
DE69401363T 1993-02-10 1994-02-10 Spannungsreduzierschaltung zur Verwendung in einer integrierten Halbleiterschaltung Expired - Lifetime DE69401363T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5022232A JP2500422B2 (ja) 1993-02-10 1993-02-10 半導体ｉｃチップ内蔵用の降圧回路

Publications (2)

Publication Number Publication Date
DE69401363D1 true DE69401363D1 (de) 1997-02-20
DE69401363T2 DE69401363T2 (de) 1997-07-31

Family

ID=12077054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401363T Expired - Lifetime DE69401363T2 (de) 1993-02-10 1994-02-10 Spannungsreduzierschaltung zur Verwendung in einer integrierten Halbleiterschaltung

Country Status (5)

Country Link
US (1) US5457421A (de)
EP (1) EP0610939B1 (de)
JP (1) JP2500422B2 (de)
KR (1) KR970010643B1 (de)
DE (1) DE69401363T2 (de)

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DE4443690A1 (de) * 1994-12-08 1996-06-20 Martin Prof Dr Poppe Monolithische integrierbare Schaltung zur Gleichspannungswandlung
US5764094A (en) * 1995-06-02 1998-06-09 Matsushita Electric Industrial Co., Ltd. Level shift circuit for analog signal and signal waveform generator including the same
US5764580A (en) * 1995-08-18 1998-06-09 Hitachi, Ltd. Semiconductor integrated circuit
US5831910A (en) * 1995-08-18 1998-11-03 Hitachi, Ltd. Semiconductor integrated circuit utilizing overdriven differential amplifiers
US5719524A (en) * 1995-10-11 1998-02-17 Telcom Semiconductor, Inc. Circuit having an input terminal for controlling two functions
US5856918A (en) * 1995-11-08 1999-01-05 Sony Corporation Internal power supply circuit
JP3591107B2 (ja) * 1996-01-19 2004-11-17 富士通株式会社 電源降圧回路及び半導体装置
WO1998035430A1 (en) * 1997-02-11 1998-08-13 The Foxboro Company Charge pump for dividing input voltage and multiplying output current
US6194944B1 (en) * 1999-04-29 2001-02-27 National Semiconductor Corporation Input structure for I/O device
US6310789B1 (en) * 1999-06-25 2001-10-30 The Procter & Gamble Company Dynamically-controlled, intrinsically regulated charge pump power converter
JP3773718B2 (ja) * 1999-09-20 2006-05-10 株式会社東芝 半導体集積回路
IL151802A0 (en) * 2000-03-22 2003-04-10 Univ Illinois Ultra-capacitor based dynamically regulated charge pump power converter
JP2002042459A (ja) * 2000-07-26 2002-02-08 Mitsubishi Electric Corp 半導体集積回路装置
EP1178585A2 (de) * 2000-08-04 2002-02-06 Matsushita Electric Industrial Co., Ltd. Stromversorgungssystem
KR100675273B1 (ko) * 2001-05-17 2007-01-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 및 지연 시간 조절회로
JP3927788B2 (ja) * 2001-11-01 2007-06-13 株式会社ルネサステクノロジ 半導体装置
DK1367702T3 (da) * 2002-05-27 2008-12-01 Bernafon Ag Strömforsyningssystem
US7271646B2 (en) * 2002-09-30 2007-09-18 Magnetrol International, Inc. Loop powered process control instrument power supply
US6731232B1 (en) * 2002-12-27 2004-05-04 Analog Devices, Inc. Programmable input range SAR ADC
KR100699829B1 (ko) * 2004-12-09 2007-03-27 삼성전자주식회사 높은 슬루 레이트를 가지는 액정 표시 장치에 포함된 소스드라이버의 출력 버퍼 및 출력 버퍼의 제어 방법
KR100691351B1 (ko) * 2005-07-25 2007-03-12 삼성전자주식회사 반도체 집적회로
US7764526B1 (en) * 2006-10-18 2010-07-27 Intersil Americas Inc. Hysteretic mode controller for capacitor voltage divider
US7612603B1 (en) * 2007-01-24 2009-11-03 Intersil Americas Inc. Switching frequency control of switched capacitor circuit using output voltage droop
KR100814824B1 (ko) * 2007-05-03 2008-03-20 삼성에스디아이 주식회사 플라즈마 표시 장치 및 그 구동 방법
US20090085617A1 (en) * 2007-09-27 2009-04-02 Infineon Technologies Ag Ramp voltage circuit
JP5130904B2 (ja) * 2007-12-21 2013-01-30 富士通セミコンダクター株式会社 電子回路装置及び電子回路装置の制御方法
US9423865B2 (en) 2013-09-13 2016-08-23 Globalfoundries Inc. Accelerating microprocessor core wake up via charge from capacitance tank without introducing noise on power grid of running microprocessor cores
US20150077170A1 (en) * 2013-09-13 2015-03-19 International Business Machines Corporation Efficient wakeup of power gated domains through charge sharing and recycling
US9389674B2 (en) 2013-09-13 2016-07-12 International Business Machines Corporation Predictively turning off a charge pump supplying voltage for overdriving gates of the power switch header in a microprocessor with power gating
US9298253B2 (en) 2013-09-13 2016-03-29 Globalfoundries Inc. Accelerating the microprocessor core wakeup by predictively executing a subset of the power-up sequence
JP7091113B2 (ja) * 2018-03-30 2022-06-27 ラピスセミコンダクタ株式会社 半導体装置、および半導体装置の制御方法
US20230057051A1 (en) * 2021-08-20 2023-02-23 Semiconductor Components Industries, Llc Self clocked low power doubling charge pump

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JPS5858863A (ja) * 1981-10-01 1983-04-07 Nec Corp スイツチド・キヤパシタ変成器
JPS6082061A (ja) * 1983-10-07 1985-05-10 Nippon Telegr & Teleph Corp <Ntt> スイツチド・キヤパシタ変成器
FR2553545B1 (fr) * 1983-10-14 1987-12-18 Efcis Integrateur exponentiel a constante de temps elevee, realise avec des capacites commutees
US4754226A (en) * 1983-11-02 1988-06-28 Stanford University Switched capacitor function generator
JPS60254650A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体集積回路
JPS63121467A (ja) * 1986-11-07 1988-05-25 Sony Corp 内部降圧回路
JPH01298953A (ja) * 1988-05-26 1989-12-01 Matsushita Electric Ind Co Ltd 電源装置
JPH0758593B2 (ja) * 1988-07-06 1995-06-21 松下電器産業株式会社 センスアップ回路
US4868908A (en) * 1988-10-18 1989-09-19 Ventritex Power supply down-conversion, regulation and low battery detection system
JPH03235657A (ja) * 1990-02-07 1991-10-21 Sumitomo Metal Ind Ltd Ｄｃ―ｄｃコンバータ
US5184031A (en) * 1990-02-08 1993-02-02 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JP2557271B2 (ja) * 1990-04-06 1996-11-27 三菱電機株式会社 内部降圧電源電圧を有する半導体装置における基板電圧発生回路
JPH04222455A (ja) * 1990-12-20 1992-08-12 Nec Corp インタフェース回路
JPH04311898A (ja) * 1991-04-10 1992-11-04 Oki Electric Ind Co Ltd 半導体装置
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
JP3337241B2 (ja) * 1991-07-26 2002-10-21 テキサス インスツルメンツ インコーポレイテツド 改良型多重チャンネル・センサーインターフェース回路とその製造方法
JP2785548B2 (ja) * 1991-10-25 1998-08-13 日本電気株式会社 半導体メモリ
US5341050A (en) * 1992-03-20 1994-08-23 Hughes Aircraft Company Switched capacitor amplifier circuit operating without serially coupled amplifiers

Also Published As

Publication number Publication date
EP0610939A1 (de) 1994-08-17
KR970010643B1 (ko) 1997-06-28
KR940020412A (ko) 1994-09-16
US5457421A (en) 1995-10-10
EP0610939B1 (de) 1997-01-08
JPH06237575A (ja) 1994-08-23
JP2500422B2 (ja) 1996-05-29
DE69401363T2 (de) 1997-07-31

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