DE69330922T2 - Bildsensor und Herstellungsverfahren - Google Patents

Bildsensor und Herstellungsverfahren

Info

Publication number
DE69330922T2
DE69330922T2 DE69330922T DE69330922T DE69330922T2 DE 69330922 T2 DE69330922 T2 DE 69330922T2 DE 69330922 T DE69330922 T DE 69330922T DE 69330922 T DE69330922 T DE 69330922T DE 69330922 T2 DE69330922 T2 DE 69330922T2
Authority
DE
Germany
Prior art keywords
nitride film
film
gate electrodes
oxidation
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330922T
Other languages
German (de)
English (en)
Other versions
DE69330922D1 (de
Inventor
Heung-Kwun Oh
Jong-Cheol Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019920007950A external-priority patent/KR930024180A/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69330922D1 publication Critical patent/DE69330922D1/de
Application granted granted Critical
Publication of DE69330922T2 publication Critical patent/DE69330922T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
DE69330922T 1992-05-11 1993-02-11 Bildsensor und Herstellungsverfahren Expired - Fee Related DE69330922T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920007950A KR930024180A (ko) 1992-05-11 이미지 센서 및 그 제조방법

Publications (2)

Publication Number Publication Date
DE69330922D1 DE69330922D1 (de) 2001-11-22
DE69330922T2 true DE69330922T2 (de) 2002-04-11

Family

ID=19332948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330922T Expired - Fee Related DE69330922T2 (de) 1992-05-11 1993-02-11 Bildsensor und Herstellungsverfahren

Country Status (5)

Country Link
US (2) US5334867B1 (enExample)
EP (1) EP0570090B1 (enExample)
JP (1) JPH07118530B2 (enExample)
DE (1) DE69330922T2 (enExample)
TW (1) TW218426B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2621767B2 (ja) * 1993-07-30 1997-06-18 日本電気株式会社 固体撮像素子
DE4438318C2 (de) * 1994-10-26 2001-06-13 Gold Star Electronics Zweiphasen-CCD und Verfahren zu dessen Herstellung
US5637891A (en) * 1994-12-08 1997-06-10 Goldstar Electron Co., Ltd. Charge coupled device having different insulators
JPH08204173A (ja) * 1995-01-25 1996-08-09 Sony Corp 電荷転送装置の製造方法
US5900654A (en) * 1995-07-17 1999-05-04 Spratt; James P. Radiation hardened charge coupled device
EP0860027B1 (en) * 1996-09-10 2005-02-16 Dalsa Corporation Charge coupled device, and method of manufacturing such a device
JP3276906B2 (ja) * 1997-11-14 2002-04-22 三洋電機株式会社 固体撮像素子及び固体撮像素子の製造方法
US6207465B1 (en) * 1998-04-17 2001-03-27 Symetrix Corporation Method of fabricating ferroelectric integrated circuit using dry and wet etching
US7791116B1 (en) 1998-10-14 2010-09-07 Micron Technology, Inc. CMOS imager having a nitride dielectric
JP2002026305A (ja) * 2000-07-12 2002-01-25 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
JP3649396B2 (ja) * 2002-02-01 2005-05-18 松下電器産業株式会社 電荷結合素子の製造方法
FI114825B (fi) * 2002-02-13 2004-12-31 Vti Technologies Oy Menetelmä kapasitiivisen anturin lämpötilariippuvuuden pienentämiseksi sekä kapasitiivinen anturirakenne
JP4739703B2 (ja) * 2004-07-14 2011-08-03 富士フイルム株式会社 固体撮像素子の製造方法
JP2006108596A (ja) * 2004-10-08 2006-04-20 Sharp Corp 電極構造およびその形成方法、固体撮像素子、その製造方法
JP2007201320A (ja) 2006-01-30 2007-08-09 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2007201319A (ja) * 2006-01-30 2007-08-09 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
TWI618232B (zh) 2013-09-09 2018-03-11 Applied Materials, Inc. 工程誘發的可調靜電效應

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519582A (enExample) * 1974-07-13 1976-01-26 Oki Electric Ind Co Ltd
JPS542684A (en) * 1977-06-08 1979-01-10 Fujitsu Ltd Manufacture of charge transfer device
NL7907434A (nl) * 1979-10-08 1981-04-10 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
JPS5947470B2 (ja) * 1981-06-09 1984-11-19 三洋電機株式会社 電荷結合素子の製造方法
US4397077A (en) * 1981-12-16 1983-08-09 Inmos Corporation Method of fabricating self-aligned MOS devices and independently formed gate dielectrics and insulating layers
NL8502478A (nl) * 1985-09-11 1987-04-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
JPS62128174A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 電荷転送装置
US4677737A (en) * 1986-05-23 1987-07-07 Tektronix, Inc. Self aligned zero overlap charge coupled device
US4908518A (en) * 1989-02-10 1990-03-13 Eastman Kodak Company Interline transfer CCD image sensing device with electrode structure for each pixel
JPH03245504A (ja) * 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd 臨界磁場測定装置用磁石
US5237188A (en) * 1990-11-28 1993-08-17 Kabushiki Kaisha Toshiba Semiconductor device with nitrided gate insulating film
JP2976585B2 (ja) * 1991-05-10 1999-11-10 ソニー株式会社 半導体装置の製造方法
US5254887A (en) * 1991-06-27 1993-10-19 Nec Corporation ECL to BiCMIS level converter

Also Published As

Publication number Publication date
JPH0685234A (ja) 1994-03-25
US5334867B1 (en) 1996-06-25
US5334867A (en) 1994-08-02
EP0570090B1 (en) 2001-10-17
EP0570090A1 (en) 1993-11-18
TW218426B (enExample) 1994-01-01
DE69330922D1 (de) 2001-11-22
US5434097A (en) 1995-07-18
JPH07118530B2 (ja) 1995-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee