DE69328911D1 - Verfahren zur Herstellung eines CMOS-Inverters auf einem SOI-Substrat mit Hilfe einer SIMOX Technik - Google Patents

Verfahren zur Herstellung eines CMOS-Inverters auf einem SOI-Substrat mit Hilfe einer SIMOX Technik

Info

Publication number
DE69328911D1
DE69328911D1 DE69328911T DE69328911T DE69328911D1 DE 69328911 D1 DE69328911 D1 DE 69328911D1 DE 69328911 T DE69328911 T DE 69328911T DE 69328911 T DE69328911 T DE 69328911T DE 69328911 D1 DE69328911 D1 DE 69328911D1
Authority
DE
Germany
Prior art keywords
producing
soi substrate
cmos inverter
simox technique
simox
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328911T
Other languages
English (en)
Other versions
DE69328911T2 (de
Inventor
Shunsuke Inoue
Toru Koizumi
Mamoru Miyawaki
Shigetoshi Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69328911D1 publication Critical patent/DE69328911D1/de
Publication of DE69328911T2 publication Critical patent/DE69328911T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
DE69328911T 1992-01-31 1993-01-27 Verfahren zur Herstellung eines CMOS-Inverters auf einem SOI-Substrat mit Hilfe einer SIMOX Technik Expired - Fee Related DE69328911T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4049692A JP3191061B2 (ja) 1992-01-31 1992-01-31 半導体装置及び液晶表示装置

Publications (2)

Publication Number Publication Date
DE69328911D1 true DE69328911D1 (de) 2000-08-03
DE69328911T2 DE69328911T2 (de) 2000-12-07

Family

ID=12582179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328911T Expired - Fee Related DE69328911T2 (de) 1992-01-31 1993-01-27 Verfahren zur Herstellung eines CMOS-Inverters auf einem SOI-Substrat mit Hilfe einer SIMOX Technik

Country Status (4)

Country Link
US (1) US5412240A (de)
EP (1) EP0554063B1 (de)
JP (1) JP3191061B2 (de)
DE (1) DE69328911T2 (de)

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JP3513371B2 (ja) * 1996-10-18 2004-03-31 キヤノン株式会社 マトリクス基板と液晶装置とこれらを用いた表示装置
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US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
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JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6501098B2 (en) * 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US7235810B1 (en) 1998-12-03 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
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US6259138B1 (en) 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
US6469317B1 (en) * 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6524895B2 (en) 1998-12-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW543206B (en) * 1999-06-28 2003-07-21 Semiconductor Energy Lab EL display device and electronic device
US6777254B1 (en) * 1999-07-06 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
DE20006642U1 (de) 2000-04-11 2000-08-17 Agilent Technologies Inc Optische Vorrichtung
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6562671B2 (en) * 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
TW544941B (en) * 2002-07-08 2003-08-01 Toppoly Optoelectronics Corp Manufacturing process and structure of thin film transistor
US7402897B2 (en) 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US20050140634A1 (en) * 2003-12-26 2005-06-30 Nec Corporation Liquid crystal display device, and method and circuit for driving liquid crystal display device
US7102201B2 (en) * 2004-07-15 2006-09-05 International Business Machines Corporation Strained semiconductor device structures
CN100446079C (zh) 2004-12-15 2008-12-24 日本电气株式会社 液晶显示装置、其驱动方法及其驱动电路
US7692223B2 (en) * 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same
US8299455B2 (en) * 2007-10-15 2012-10-30 International Business Machines Corporation Semiconductor structures having improved contact resistance
US8324661B2 (en) * 2009-12-23 2012-12-04 Intel Corporation Quantum well transistors with remote counter doping

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JPH077826B2 (ja) * 1983-08-25 1995-01-30 忠弘 大見 半導体集積回路
JPS6194367A (ja) * 1984-10-16 1986-05-13 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及び半導体装置の製造方法
JPS62104173A (ja) * 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置
JPS63142851A (ja) * 1986-12-05 1988-06-15 Matsushita Electronics Corp 半導体装置
WO1989002095A1 (en) * 1987-08-27 1989-03-09 Hughes Aircraft Company Lcmos displays fabricated with implant treated silicon wafers
JP2752991B2 (ja) * 1988-07-14 1998-05-18 株式会社東芝 半導体装置
US5060035A (en) * 1989-07-13 1991-10-22 Mitsubishi Denki Kabushiki Kaisha Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure
JPH03105976A (ja) * 1989-09-19 1991-05-02 Nec Corp Ｍｏｓ型電界効果トランジスタ
US5241211A (en) * 1989-12-20 1993-08-31 Nec Corporation Semiconductor device
US5233207A (en) * 1990-06-25 1993-08-03 Nippon Steel Corporation MOS semiconductor device formed on insulator
ATE217447T1 (de) * 1990-08-03 2002-05-15 Canon Kk Verfahren zur herstellung eines halbleiterkörpers
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Also Published As

Publication number Publication date
DE69328911T2 (de) 2000-12-07
JPH05307189A (ja) 1993-11-19
EP0554063A1 (de) 1993-08-04
EP0554063B1 (de) 2000-06-28
US5412240A (en) 1995-05-02
JP3191061B2 (ja) 2001-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee