DE69325157D1 - Methode und vorrichtung zur oberflächenanalyse - Google Patents

Methode und vorrichtung zur oberflächenanalyse

Info

Publication number
DE69325157D1
DE69325157D1 DE69325157T DE69325157T DE69325157D1 DE 69325157 D1 DE69325157 D1 DE 69325157D1 DE 69325157 T DE69325157 T DE 69325157T DE 69325157 T DE69325157 T DE 69325157T DE 69325157 D1 DE69325157 D1 DE 69325157D1
Authority
DE
Germany
Prior art keywords
surface analysis
analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325157T
Other languages
English (en)
Other versions
DE69325157T2 (de
Inventor
Ken A Ninomiya
Hideo - Todokoro
Tokuo - Kure
Yasushiro - - Mitsui
Katsuhiro - - Kuroda
Hiroyasu E Shichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69325157D1 publication Critical patent/DE69325157D1/de
Publication of DE69325157T2 publication Critical patent/DE69325157T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/076—X-ray fluorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2441—Semiconductor detectors, e.g. diodes
    • H01J2237/24415—X-ray

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE69325157T 1992-09-28 1993-09-27 Methode und vorrichtung zur oberflächenanalyse Expired - Fee Related DE69325157T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25778992 1992-09-28
PCT/JP1993/001373 WO1994008232A1 (en) 1992-09-28 1993-09-27 Method and apparatus for surface analysis

Publications (2)

Publication Number Publication Date
DE69325157D1 true DE69325157D1 (de) 1999-07-08
DE69325157T2 DE69325157T2 (de) 2000-01-20

Family

ID=17311132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325157T Expired - Fee Related DE69325157T2 (de) 1992-09-28 1993-09-27 Methode und vorrichtung zur oberflächenanalyse

Country Status (5)

Country Link
US (1) US5481109A (de)
EP (1) EP0615123B1 (de)
JP (1) JP3135920B2 (de)
DE (1) DE69325157T2 (de)
WO (1) WO1994008232A1 (de)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594246A (en) * 1994-04-11 1997-01-14 Hitachi, Ltd. Method and apparatus for x-ray analyses
JPH07294460A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd Ｘ線分析方法および装置
US5877498A (en) * 1992-09-28 1999-03-02 Hitachi, Ltd. Method and apparatus for X-ray analyses
DE4408057B4 (de) * 1994-03-07 2008-12-24 Ifg-Institute For Scientific Instruments Gmbh Vorrichtung zur Röntgenfluoreszenzspektroskopie und deren Verwendung
US5798525A (en) * 1996-06-26 1998-08-25 International Business Machines Corporation X-ray enhanced SEM critical dimension measurement
US5900667A (en) * 1996-10-04 1999-05-04 Etec Systems, Inc. Operating a solid state particle detector within a magnetic deflection field so as to minimize eddy currents
JP2001505303A (ja) * 1996-10-16 2001-04-17 ステリス コーポレイション 医療用及び歯科用器具の清浄度及び完全性評価のためのスキャン装置
FI101504B1 (fi) * 1997-01-03 1998-06-30 Univ Helsinki Licensing Menetelmä alkuaineiden kvantitatiiviseksi määrittämiseksi ilmansaasteiden leviämisen selvittämiseksi päästölähteen ympäristössä
JPH1196958A (ja) * 1997-09-19 1999-04-09 Hitachi Ltd 分析電子顕微鏡
US5923432A (en) * 1997-12-18 1999-07-13 Steris Corporation Cleaning efficacy real time indicator
DE69940100D1 (de) * 1998-01-27 2009-01-29 Noran Instr Inc Wellenlänge-dispersives röntgenstrahlungsspektrometer mit röntgenstrahlung-kollimatoropik für erhöhter sensitivität über einen weiten energie-bereich
US6269144B1 (en) 1998-03-04 2001-07-31 William P. Dube Method and apparatus for diffraction measurement using a scanning x-ray source
US6146795A (en) * 1998-09-02 2000-11-14 Advanced Micro Devices, Inc. Method for manufacturing memory devices
EP1121584A4 (de) 1998-09-17 2002-10-16 Noran Instr Inc Verwendung von röntgen-optik für dispensive spektroskopie
US6266390B1 (en) * 1998-09-21 2001-07-24 Spectramet, Llc High speed materials sorting using x-ray fluorescence
US6351516B1 (en) * 1999-12-14 2002-02-26 Jordan Valley Applied Radiation Ltd. Detection of voids in semiconductor wafer processing
US7171038B2 (en) * 2000-12-15 2007-01-30 Kla-Tencor Technologies Corporation Method and apparatus for inspecting a substrate
JP4738610B2 (ja) * 2001-03-02 2011-08-03 株式会社トプコン 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法
US6995847B2 (en) 2002-05-24 2006-02-07 Honeywell International Inc. Methods and systems for substrate surface evaluation
CN1820194B (zh) * 2003-07-30 2012-06-13 应用材料以色列公司 具有多检测器的扫描电子显微镜和基于多检测器成像方法
US20060026807A1 (en) * 2003-08-07 2006-02-09 Carnevali Jeffrey D Quick release mounting apparatus
US7094616B2 (en) * 2004-03-04 2006-08-22 International Business Machines Corporation High resolution cross-sectioning of polysilicon features with a dual beam tool
US7075073B1 (en) * 2004-05-21 2006-07-11 Kla-Tencor Technologies Corporation Angle resolved x-ray detection
GB0411401D0 (en) * 2004-05-21 2004-06-23 Tissuomics Ltd Penetrating radiation measurements
JP4479354B2 (ja) * 2004-06-01 2010-06-09 Ｊｆｅスチール株式会社 亜鉛系めっき鋼板の表層酸化膜の膜厚測定方法
JP4695857B2 (ja) * 2004-08-25 2011-06-08 株式会社日立ハイテクノロジーズ 半導体検査方法および半導体検査装置
US7804934B2 (en) 2004-12-22 2010-09-28 Jordan Valley Semiconductors Ltd. Accurate measurement of layer dimensions using XRF
US7110491B2 (en) * 2004-12-22 2006-09-19 Jordan Valley Applied Radiation Ltd. Measurement of critical dimensions using X-ray diffraction in reflection mode
US7115866B1 (en) * 2005-04-28 2006-10-03 Kla-Tencor Technologies, Inc. Site stepping for electron beam micro analysis
WO2007034572A1 (ja) * 2005-09-26 2007-03-29 Jfe Steel Corporation 亜鉛系めっき鋼板の表層酸化膜の膜厚測定方法
KR101374308B1 (ko) * 2005-12-23 2014-03-14 조르단 밸리 세미컨덕터즈 리미티드 Ｘｒｆ를 사용한 층 치수의 정밀 측정법
US7519153B1 (en) * 2006-03-24 2009-04-14 Kla-Tencor Technologies Corporation X-ray metrology with diffractors
US7481579B2 (en) * 2006-03-27 2009-01-27 Jordan Valley Applied Radiation Ltd. Overlay metrology using X-rays
US20070274447A1 (en) * 2006-05-15 2007-11-29 Isaac Mazor Automated selection of X-ray reflectometry measurement locations
US7535989B2 (en) * 2006-10-17 2009-05-19 Innov-X Systems, Inc. XRF system with novel sample bottle
US8064570B2 (en) * 2006-12-20 2011-11-22 Innov-X-Systems, Inc. Hand-held XRF analyzer
IL180482A0 (en) * 2007-01-01 2007-06-03 Jordan Valley Semiconductors Inspection of small features using x - ray fluorescence
EP1978354A1 (de) * 2007-04-05 2008-10-08 Panalytical B.V. Wellenlängendispersive Röntgenfluoreszenzvorrichtung mit energiedispersivem Detektor in Form eines Silicon-drift-detektors zur Verbesserung der Untergrundunterdrückung
US8053279B2 (en) 2007-06-19 2011-11-08 Micron Technology, Inc. Methods and systems for imaging and cutting semiconductor wafers and other semiconductor workpieces
US7680243B2 (en) * 2007-09-06 2010-03-16 Jordan Valley Semiconductors Ltd. X-ray measurement of properties of nano-particles
US7653173B2 (en) * 2007-09-28 2010-01-26 Searete Llc Combining X-ray fluorescence visualizer, imager, or information provider
US7825376B2 (en) * 2007-09-28 2010-11-02 The Invention Science Fund I Scintillator aspects for X-ray fluorescence visualizer, imager, or information provider
US20090086899A1 (en) * 2007-09-28 2009-04-02 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Repositioning X-ray fluorescence visualizer, imager, or information provider
US7664224B2 (en) * 2007-09-28 2010-02-16 Searete Llc X-ray fluorescence visualizing, imaging, or information providing of chemicals, compounds, or biological materials
US7660385B2 (en) * 2007-09-28 2010-02-09 Searete Llc Time of flight aspects for X-Ray fluorescence visualizer, imager, or information provider
US8041005B2 (en) * 2007-09-28 2011-10-18 The Invention Science Fund I, Llc X-ray fluorescence visualizer, imager, or information provider
US7724867B2 (en) * 2007-09-28 2010-05-25 Invention Science Fund I, Llc Proximity-based X-Ray fluorescence visualizer, imager, or information provider
US20090086903A1 (en) * 2007-09-28 2009-04-02 Searete LLC, a limited liability corporation of Selective elemental color providing for X-ray fluorescence visualization, imaging, or information providing
US7738627B2 (en) * 2007-09-28 2010-06-15 The Invention Science Fund I, Llc Geometric X-ray fluorescence visualizer, imager, or information provider
US8000438B2 (en) * 2007-09-28 2011-08-16 The Invention Science Fund I, Llc Tool based X-ray fluorescence visualizing, imaging, or information providing
US7702066B2 (en) * 2007-09-28 2010-04-20 Searete Llc Portable aspects for x-ray fluorescence visualizer, imager, or information provider
US7773722B2 (en) * 2007-09-28 2010-08-10 The Invention Science Fund I, Llc Personal transportable X-ray fluorescence visualizing, imaging, or information providing
US20100017020A1 (en) * 2008-07-16 2010-01-21 Bradley Hubbard-Nelson Sorting system
WO2010132124A1 (en) * 2009-05-15 2010-11-18 Aspex Corporation Electron microscope with integrated detector(s)
US8243878B2 (en) * 2010-01-07 2012-08-14 Jordan Valley Semiconductors Ltd. High-resolution X-ray diffraction measurement with enhanced sensitivity
US8687766B2 (en) 2010-07-13 2014-04-01 Jordan Valley Semiconductors Ltd. Enhancing accuracy of fast high-resolution X-ray diffractometry
JP5563935B2 (ja) * 2010-09-10 2014-07-30 日本電子株式会社 Ｘ線検出システム
US8437450B2 (en) 2010-12-02 2013-05-07 Jordan Valley Semiconductors Ltd. Fast measurement of X-ray diffraction from tilted layers
CZ2011154A3 (cs) * 2011-03-23 2012-06-06 Tescan A.S. Zpusob analýzy materiálu fokusovaným elektronovým svazkem s využitím charakteristického rentgenového zárení a zpetne odražených elektronu a zarízení k jeho provádení
JP2013002910A (ja) * 2011-06-15 2013-01-07 Toshiba Corp パターン検査方法およびパターン検査装置
DE102011080341A1 (de) 2011-08-03 2013-02-07 Carl Zeiss Nts Gmbh Verfahren und Teilchenstrahlgerät zur Erzeugung eines Bildes eines Objekts
US8781070B2 (en) 2011-08-11 2014-07-15 Jordan Valley Semiconductors Ltd. Detection of wafer-edge defects
CN102323282A (zh) * 2011-08-23 2012-01-18 上海华碧检测技术有限公司 一种汽车电子中接触端子的失效分析方法
CN102393401A (zh) * 2011-08-25 2012-03-28 上海华碧检测技术有限公司 一种空气污染颗粒物中重金属元素含量的检测方法
US9390984B2 (en) 2011-10-11 2016-07-12 Bruker Jv Israel Ltd. X-ray inspection of bumps on a semiconductor substrate
JP5909431B2 (ja) * 2012-09-27 2016-04-26 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US9389192B2 (en) 2013-03-24 2016-07-12 Bruker Jv Israel Ltd. Estimation of XRF intensity from an array of micro-bumps
GB201317026D0 (en) 2013-09-25 2013-11-06 Oxford Instr Nanotechnology Tools Ltd X-ray analysis in air
US9632043B2 (en) 2014-05-13 2017-04-25 Bruker Jv Israel Ltd. Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF
US9726624B2 (en) 2014-06-18 2017-08-08 Bruker Jv Israel Ltd. Using multiple sources/detectors for high-throughput X-ray topography measurement
US9606073B2 (en) 2014-06-22 2017-03-28 Bruker Jv Israel Ltd. X-ray scatterometry apparatus
US9829448B2 (en) 2014-10-30 2017-11-28 Bruker Jv Israel Ltd. Measurement of small features using XRF
JP2016098468A (ja) * 2014-11-25 2016-05-30 特種東海製紙株式会社 ガラス板合紙用木材パルプ及びガラス板用合紙
US10215553B2 (en) 2015-03-12 2019-02-26 Apple Inc. Thin PSD for laser-scanning systems
US9829445B2 (en) 2015-12-03 2017-11-28 Apple Inc. Testing diffraction or diffusion of a light beam
US10684238B2 (en) 2016-01-11 2020-06-16 Bruker Technologies Ltd. Method and apparatus for X-ray scatterometry
US9972474B2 (en) 2016-07-31 2018-05-15 Fei Company Electron microscope with multiple types of integrated x-ray detectors arranged in an array
US10816487B2 (en) 2018-04-12 2020-10-27 Bruker Technologies Ltd. Image contrast in X-ray topography imaging for defect inspection
JP2019191169A (ja) 2018-04-23 2019-10-31 ブルカー ジェイヴィ イスラエル リミテッドＢｒｕｋｅｒ Ｊｖ Ｉｓｒａｅｌ Ｌｔｄ． 小角ｘ線散乱測定用のｘ線源光学系
US11181490B2 (en) 2018-07-05 2021-11-23 Bruker Technologies Ltd. Small-angle x-ray scatterometry
RU2707980C1 (ru) * 2019-05-16 2019-12-03 Федеральное государственное бюджетное учреждение науки Институт химии твердого тела Уральского отделения Российской академии наук Способ формирования изображения поверхности объекта
US11781999B2 (en) 2021-09-05 2023-10-10 Bruker Technologies Ltd. Spot-size control in reflection-based and scatterometry-based X-ray metrology systems

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553129A (en) * 1978-06-21 1980-01-10 Jeol Ltd X-ray analyzer for scanning electron microscope or the like
JPS61132847A (ja) * 1984-11-30 1986-06-20 Sumitomo Metal Ind Ltd ２層メツキ被膜の螢光ｘ線分析方法及び装置
JPS63243855A (ja) * 1987-03-31 1988-10-11 Shimadzu Corp 荷電粒子分析装置
JPH0552779A (ja) * 1991-08-26 1993-03-02 Matsushita Electric Ind Co Ltd 走査型電子顕微鏡像の観察方法
JPH05190633A (ja) * 1992-01-17 1993-07-30 Hitachi Ltd 固体表面元素分析装置

Also Published As

Publication number Publication date
JP3135920B2 (ja) 2001-02-19
EP0615123A4 (de) 1995-04-19
US5481109A (en) 1996-01-02
WO1994008232A1 (en) 1994-04-14
EP0615123B1 (de) 1999-06-02
DE69325157T2 (de) 2000-01-20
EP0615123A1 (de) 1994-09-14

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