DE69324439D1 - Bilderzeugungsverfahren zur Herstellung von Photo-Resistmustern - Google Patents

Bilderzeugungsverfahren zur Herstellung von Photo-Resistmustern

Info

Publication number
DE69324439D1
DE69324439D1 DE69324439T DE69324439T DE69324439D1 DE 69324439 D1 DE69324439 D1 DE 69324439D1 DE 69324439 T DE69324439 T DE 69324439T DE 69324439 T DE69324439 T DE 69324439T DE 69324439 D1 DE69324439 D1 DE 69324439D1
Authority
DE
Germany
Prior art keywords
photo
production
imaging process
resist patterns
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69324439T
Other languages
English (en)
Other versions
DE69324439T2 (de
Inventor
Gregory Breyta
Nicholas Jeffries Clecak
Iii William Dinan Hinsberg
Donald Clifford Hofer
Hiroshi Ito
Scott Arthur Macdonald
Ratman Soorijakumaran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25517977&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69324439(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69324439D1 publication Critical patent/DE69324439D1/de
Application granted granted Critical
Publication of DE69324439T2 publication Critical patent/DE69324439T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE69324439T 1992-11-03 1993-10-29 Bilderzeugungsverfahren zur Herstellung von Photo-Resistmustern Expired - Lifetime DE69324439T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97114092A 1992-11-03 1992-11-03

Publications (2)

Publication Number Publication Date
DE69324439D1 true DE69324439D1 (de) 1999-05-20
DE69324439T2 DE69324439T2 (de) 1999-11-25

Family

ID=25517977

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324439T Expired - Lifetime DE69324439T2 (de) 1992-11-03 1993-10-29 Bilderzeugungsverfahren zur Herstellung von Photo-Resistmustern

Country Status (4)

Country Link
US (1) US6277546B1 (de)
EP (1) EP0596668B1 (de)
JP (1) JP2688168B2 (de)
DE (1) DE69324439T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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US6037107A (en) * 1997-08-28 2000-03-14 Shipley Company, L.L.C. Photoresist compositions
US7482107B2 (en) 1997-08-28 2009-01-27 Shipley Company, L.L.C. Photoresist composition
US7026093B2 (en) 1997-08-28 2006-04-11 Shipley Company, L.L.C. Photoresist compositions
JP3711198B2 (ja) 1998-04-23 2005-10-26 東京応化工業株式会社 レジストパターンの形成方法
US6770413B1 (en) * 1999-01-12 2004-08-03 Shipley Company, L.L.C. Hydroxyphenyl copolymers and photoresists comprising same
DE10120660B8 (de) * 2001-04-27 2006-09-28 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120676B4 (de) * 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120674B4 (de) * 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120673B4 (de) * 2001-04-27 2007-01-25 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
US6800422B2 (en) * 2001-05-11 2004-10-05 Shipley Company, L.L.C. Thick film photoresists and methods for use thereof
JP4286151B2 (ja) * 2002-04-01 2009-06-24 ダイセル化学工業株式会社 フォトレジスト用高分子化合物の製造法
KR100456312B1 (ko) * 2002-07-19 2004-11-10 주식회사 하이닉스반도체 반도체 소자의 초미세 콘택홀 형성방법
DE10243742B4 (de) * 2002-09-20 2007-11-08 Qimonda Ag Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists
WO2004081664A2 (en) * 2003-03-11 2004-09-23 Arch Specialty Chemicals, Inc. Novel photosensitive resin compositions
JP3694692B2 (ja) * 2003-12-11 2005-09-14 丸善石油化学株式会社 レジスト用ポリマー溶液およびその製造方法
JP4284358B2 (ja) * 2004-04-30 2009-06-24 丸善石油化学株式会社 半導体リソグラフィー用共重合体とその製造方法、および組成物
US7999910B2 (en) * 2005-04-27 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for manufacturing a mask for semiconductor processing
JP4617252B2 (ja) * 2005-12-22 2011-01-19 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7790350B2 (en) * 2007-07-30 2010-09-07 International Business Machines Corporation Method and materials for patterning a neutral surface
US8197996B2 (en) * 2008-09-19 2012-06-12 Tokyo Electron Limited Dual tone development processes
CN104199254B (zh) * 2014-09-24 2018-04-27 中国科学院天津工业生物技术研究所 一种相变光刻胶及其制备方法
US9804539B2 (en) * 2015-05-27 2017-10-31 Canon Kabushiki Kaisha Image forming apparatus and image forming method

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430419A (en) 1981-01-22 1984-02-07 Nippon Telegraph & Telephone Public Corporation Positive resist and method for manufacturing a pattern thereof
JPS58114030A (ja) 1981-12-28 1983-07-07 Fujitsu Ltd ポジ型レジスト材料
US4476217A (en) 1982-05-10 1984-10-09 Honeywell Inc. Sensitive positive electron beam resists
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4608281A (en) * 1982-09-28 1986-08-26 Exxon Research And Engineering Co. Improvements in sensitivity of a positive polymer resist having a glass transition temperature through control of a molecular weight distribution and prebaked temperature
US4897337A (en) 1983-01-19 1990-01-30 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for forming resist pattern
GB8413395D0 (en) 1984-05-25 1984-07-04 Ciba Geigy Ag Production of images
ATE47631T1 (de) * 1985-03-11 1989-11-15 Hoechst Celanese Corp Verfahren zum herstellen von photoresiststrukturen.
US4980264A (en) 1985-12-17 1990-12-25 International Business Machines Corporation Photoresist compositions of controlled dissolution rate in alkaline developers
WO1987004810A1 (en) 1986-01-29 1987-08-13 Hughes Aircraft Company Method for developing poly(methacrylic anhydride) resists
JPS62215265A (ja) 1986-03-17 1987-09-21 Ushio Inc レジスト処理方法
EP0249139B2 (de) * 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Lackzusammensetzung und -anwendung
US4939070A (en) 1986-07-28 1990-07-03 Brunsvold William R Thermally stable photoresists with high sensitivity
US4931379A (en) 1986-10-23 1990-06-05 International Business Machines Corporation High sensitivity resists having autodecomposition temperatures greater than about 160° C.
JPH0740547B2 (ja) 1987-03-24 1995-05-01 ウシオ電機株式会社 レジスト処理方法
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
US4824763A (en) 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
EP0304313A3 (de) 1987-08-21 1990-08-22 Oki Electric Industry Company, Limited Bilderzeugungsmaterial
US4869996A (en) 1987-12-18 1989-09-26 E. I. Du Pont De Nemours And Company Process for preparing negative images on a positive-type tonable photosensitive element
US5024922A (en) 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
JPH03198059A (ja) * 1989-12-27 1991-08-29 Sony Corp 感光性樹脂組成物
US5164278A (en) 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
US5071730A (en) 1990-04-24 1991-12-10 International Business Machines Corporation Liquid apply, aqueous processable photoresist compositions
JP2557748B2 (ja) * 1990-09-07 1996-11-27 日本電信電話株式会社 ポジ型レジスト材料
JPH04204848A (ja) * 1990-11-30 1992-07-27 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JP3003808B2 (ja) 1991-03-14 2000-01-31 東京応化工業株式会社 マイクロレンズ及びその製造方法
DE4111283A1 (de) 1991-04-08 1992-10-15 Basf Ag Strahlungsempfindliches gemisch, enthaltend saeurelabile gruppierungen und verfahren zur herstellung von reliefmustern und reliefbildern
DE4112970A1 (de) 1991-04-20 1992-10-22 Hoechst Ag Saeurespaltbare strahlungsempfindliche verbindungen, diese enthaltendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JPH05107757A (ja) 1991-10-19 1993-04-30 Canon Inc 感光性樹脂組成物

Also Published As

Publication number Publication date
EP0596668A3 (en) 1996-01-17
JP2688168B2 (ja) 1997-12-08
EP0596668B1 (de) 1999-04-14
US6277546B1 (en) 2001-08-21
DE69324439T2 (de) 1999-11-25
JPH07312331A (ja) 1995-11-28
EP0596668A2 (de) 1994-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: DUSCHER, R., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 7