DE6931891U - Oberflaechensperrschicht-diode - Google Patents

Oberflaechensperrschicht-diode

Info

Publication number
DE6931891U
DE6931891U DE6931891U DE6931891U DE6931891U DE 6931891 U DE6931891 U DE 6931891U DE 6931891 U DE6931891 U DE 6931891U DE 6931891 U DE6931891 U DE 6931891U DE 6931891 U DE6931891 U DE 6931891U
Authority
DE
Germany
Prior art keywords
area
semiconductor body
semiconductor
barrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE6931891U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE6931891U publication Critical patent/DE6931891U/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/012—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/167—Two diffusions in one hole

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE6931891U 1968-08-21 1969-08-12 Oberflaechensperrschicht-diode Expired DE6931891U (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75432568A 1968-08-21 1968-08-21

Publications (1)

Publication Number Publication Date
DE6931891U true DE6931891U (de) 1969-12-18

Family

ID=25034307

Family Applications (2)

Application Number Title Priority Date Filing Date
DE6931891U Expired DE6931891U (de) 1968-08-21 1969-08-12 Oberflaechensperrschicht-diode
DE19691941075 Pending DE1941075B2 (de) 1968-08-21 1969-08-12 Schottky sperrschichtdiode und verfahren zur herstellung derselben

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19691941075 Pending DE1941075B2 (de) 1968-08-21 1969-08-12 Schottky sperrschichtdiode und verfahren zur herstellung derselben

Country Status (6)

Country Link
US (1) US3513366A (cg-RX-API-DMAC10.html)
BE (1) BE737735A (cg-RX-API-DMAC10.html)
DE (2) DE6931891U (cg-RX-API-DMAC10.html)
FR (1) FR2016053B1 (cg-RX-API-DMAC10.html)
GB (1) GB1229776A (cg-RX-API-DMAC10.html)
NL (1) NL6912689A (cg-RX-API-DMAC10.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265018A (cg-RX-API-DMAC10.html) * 1968-08-27 1972-03-01
US3786320A (en) * 1968-10-04 1974-01-15 Matsushita Electronics Corp Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction
GB1316555A (cg-RX-API-DMAC10.html) * 1969-08-12 1973-05-09
US3649890A (en) * 1969-12-31 1972-03-14 Microwave Ass High burnout resistance schottky barrier diode
US3737742A (en) * 1971-09-30 1973-06-05 Trw Inc Monolithic bi-polar semiconductor device employing cermet for both schottky barrier and ohmic contact
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
US3907617A (en) * 1971-10-22 1975-09-23 Motorola Inc Manufacture of a high voltage Schottky barrier device
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same
GB1558506A (en) * 1976-08-09 1980-01-03 Mullard Ltd Semiconductor devices having a rectifying metalto-semicondductor junction
US4638551A (en) * 1982-09-24 1987-01-27 General Instrument Corporation Schottky barrier device and method of manufacture
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
US5143857A (en) * 1988-11-07 1992-09-01 Triquint Semiconductor, Inc. Method of fabricating an electronic device with reduced susceptiblity to backgating effects
JPH05299441A (ja) * 1992-04-24 1993-11-12 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
US6903433B1 (en) * 2000-01-19 2005-06-07 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US7274082B2 (en) * 2000-01-19 2007-09-25 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
CN103094358A (zh) * 2011-11-01 2013-05-08 比亚迪股份有限公司 一种肖特基二极管及其制造方法
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463971A (en) * 1967-04-17 1969-08-26 Hewlett Packard Co Hybrid semiconductor device including diffused-junction and schottky-barrier diodes

Also Published As

Publication number Publication date
BE737735A (cg-RX-API-DMAC10.html) 1970-02-20
FR2016053B1 (cg-RX-API-DMAC10.html) 1974-09-06
GB1229776A (cg-RX-API-DMAC10.html) 1971-04-28
FR2016053A1 (cg-RX-API-DMAC10.html) 1970-04-30
US3513366A (en) 1970-05-19
DE1941075B2 (de) 1971-11-18
DE1941075A1 (de) 1970-02-26
NL6912689A (cg-RX-API-DMAC10.html) 1970-02-24

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