FR2016053B1 - - Google Patents

Info

Publication number
FR2016053B1
FR2016053B1 FR6928401A FR6928401A FR2016053B1 FR 2016053 B1 FR2016053 B1 FR 2016053B1 FR 6928401 A FR6928401 A FR 6928401A FR 6928401 A FR6928401 A FR 6928401A FR 2016053 B1 FR2016053 B1 FR 2016053B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6928401A
Other versions
FR2016053A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2016053A1 publication Critical patent/FR2016053A1/fr
Application granted granted Critical
Publication of FR2016053B1 publication Critical patent/FR2016053B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/167—Two diffusions in one hole

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
FR6928401A 1968-08-21 1969-08-19 Expired FR2016053B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75432568A 1968-08-21 1968-08-21

Publications (2)

Publication Number Publication Date
FR2016053A1 FR2016053A1 (fr) 1970-04-30
FR2016053B1 true FR2016053B1 (fr) 1974-09-06

Family

ID=25034307

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6928401A Expired FR2016053B1 (fr) 1968-08-21 1969-08-19

Country Status (6)

Country Link
US (1) US3513366A (fr)
BE (1) BE737735A (fr)
DE (2) DE1941075B2 (fr)
FR (1) FR2016053B1 (fr)
GB (1) GB1229776A (fr)
NL (1) NL6912689A (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265018A (fr) * 1968-08-27 1972-03-01
US3786320A (en) * 1968-10-04 1974-01-15 Matsushita Electronics Corp Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction
GB1316555A (fr) * 1969-08-12 1973-05-09
US3649890A (en) * 1969-12-31 1972-03-14 Microwave Ass High burnout resistance schottky barrier diode
US3737742A (en) * 1971-09-30 1973-06-05 Trw Inc Monolithic bi-polar semiconductor device employing cermet for both schottky barrier and ohmic contact
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
US3907617A (en) * 1971-10-22 1975-09-23 Motorola Inc Manufacture of a high voltage Schottky barrier device
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same
GB1558506A (en) * 1976-08-09 1980-01-03 Mullard Ltd Semiconductor devices having a rectifying metalto-semicondductor junction
US4638551A (en) * 1982-09-24 1987-01-27 General Instrument Corporation Schottky barrier device and method of manufacture
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
US5143857A (en) * 1988-11-07 1992-09-01 Triquint Semiconductor, Inc. Method of fabricating an electronic device with reduced susceptiblity to backgating effects
JPH05299441A (ja) * 1992-04-24 1993-11-12 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
US6903433B1 (en) * 2000-01-19 2005-06-07 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US7274082B2 (en) * 2000-01-19 2007-09-25 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
CN103094358A (zh) * 2011-11-01 2013-05-08 比亚迪股份有限公司 一种肖特基二极管及其制造方法
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463971A (en) * 1967-04-17 1969-08-26 Hewlett Packard Co Hybrid semiconductor device including diffused-junction and schottky-barrier diodes

Also Published As

Publication number Publication date
BE737735A (fr) 1970-02-20
GB1229776A (fr) 1971-04-28
DE6931891U (de) 1969-12-18
US3513366A (en) 1970-05-19
FR2016053A1 (fr) 1970-04-30
NL6912689A (fr) 1970-02-24
DE1941075A1 (de) 1970-02-26
DE1941075B2 (de) 1971-11-18

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Legal Events

Date Code Title Description
ST Notification of lapse