DE69311184T2 - Halbleitervorrichtung samt Herstellungsverfahren - Google Patents

Halbleitervorrichtung samt Herstellungsverfahren

Info

Publication number
DE69311184T2
DE69311184T2 DE69311184T DE69311184T DE69311184T2 DE 69311184 T2 DE69311184 T2 DE 69311184T2 DE 69311184 T DE69311184 T DE 69311184T DE 69311184 T DE69311184 T DE 69311184T DE 69311184 T2 DE69311184 T2 DE 69311184T2
Authority
DE
Germany
Prior art keywords
semiconductor device
dielectric film
component
matrix
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311184T
Other languages
German (de)
English (en)
Other versions
DE69311184D1 (de
Inventor
Masanori Fukumoto
Shinichi Imai
Yasuo Mizuno
Shinji Odanaka
Yuka Terai
Hiroyuki Umimoto
Kousaku Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69311184D1 publication Critical patent/DE69311184D1/de
Publication of DE69311184T2 publication Critical patent/DE69311184T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/693—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6931—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing tantalum, e.g. TaSiOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69311184T 1992-03-27 1993-03-26 Halbleitervorrichtung samt Herstellungsverfahren Expired - Fee Related DE69311184T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7075392 1992-03-27
JP9504092 1992-04-15

Publications (2)

Publication Number Publication Date
DE69311184D1 DE69311184D1 (de) 1997-07-10
DE69311184T2 true DE69311184T2 (de) 1997-09-18

Family

ID=26411887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311184T Expired - Fee Related DE69311184T2 (de) 1992-03-27 1993-03-26 Halbleitervorrichtung samt Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5633211A (https=)
EP (1) EP0562625B1 (https=)
KR (1) KR970003724B1 (https=)
DE (1) DE69311184T2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169833A (ja) * 1993-12-14 1995-07-04 Nec Corp 半導体装置及びその製造方法
TW302525B (https=) * 1995-02-28 1997-04-11 Hitachi Ltd
KR0179292B1 (ko) * 1996-04-12 1999-04-15 문정환 반도체소자의 다층배선 형성방법
US7763327B2 (en) 1996-04-22 2010-07-27 Micron Technology, Inc. Methods using ozone for CVD deposited films
JP2983476B2 (ja) * 1996-10-30 1999-11-29 キヤノン販売株式会社 成膜方法及び半導体装置の製造方法
US5763021A (en) * 1996-12-13 1998-06-09 Cypress Semiconductor Corporation Method of forming a dielectric film
US6077786A (en) * 1997-05-08 2000-06-20 International Business Machines Corporation Methods and apparatus for filling high aspect ratio structures with silicate glass
US6057250A (en) * 1998-01-27 2000-05-02 International Business Machines Corporation Low temperature reflow dielectric-fluorinated BPSG
JPH11288893A (ja) 1998-04-03 1999-10-19 Nec Corp 半導体製造装置及び半導体装置の製造方法
US6451714B2 (en) * 1998-08-26 2002-09-17 Micron Technology, Inc. System and method for selectively increasing surface temperature of an object
JP2000077402A (ja) * 1998-09-02 2000-03-14 Tokyo Electron Ltd プラズマ処理方法および半導体装置
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US6159870A (en) * 1998-12-11 2000-12-12 International Business Machines Corporation Borophosphosilicate glass incorporated with fluorine for low thermal budget gap fill
US6261975B1 (en) * 1999-03-04 2001-07-17 Applied Materials, Inc. Method for depositing and planarizing fluorinated BPSG films
CN1301537C (zh) * 1999-04-16 2007-02-21 国际商业机器公司 制作掺氟的硼磷硅玻璃的方法
US6054397A (en) * 1999-07-28 2000-04-25 Promos Technologies Inc. BPSG planarization method having improved planarity and reduced chatter mark defects
US6514876B1 (en) * 1999-09-07 2003-02-04 Steag Rtp Systems, Inc. Pre-metal dielectric rapid thermal processing for sub-micron technology
US6348706B1 (en) * 2000-03-20 2002-02-19 Micron Technology, Inc. Method to form etch and/or CMP stop layers
JP2001284347A (ja) 2000-03-31 2001-10-12 Canon Sales Co Inc 成膜方法及び半導体装置の製造方法
KR100503951B1 (ko) * 2003-04-30 2005-07-26 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20110175184A1 (en) * 2010-01-21 2011-07-21 Fujifilm Corporation Solid-state imaging device and method of manufacturing solid-state imaging device
US20150048477A1 (en) * 2013-08-16 2015-02-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US10199388B2 (en) * 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB476837I5 (https=) * 1974-06-06 1976-01-20
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
GB8401250D0 (en) * 1984-01-18 1984-02-22 British Telecomm Semiconductor fabrication
US4810673A (en) * 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
JP2557898B2 (ja) * 1987-07-31 1996-11-27 株式会社東芝 半導体装置
US5180692A (en) * 1988-03-30 1993-01-19 Tokyo Electron Limited Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride
US4962063A (en) * 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
DE69028665T2 (de) * 1989-07-18 1997-04-17 Sony Corp., Tokio/Tokyo Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung
US5314845A (en) * 1989-09-28 1994-05-24 Applied Materials, Inc. Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
NL9001770A (nl) * 1990-08-06 1992-03-02 Philips Nv Werkwijze voor het aanbrengen van een siliciumdioxide-laag op een substraat door middel van chemische reactie uit de dampfase bij verlaagde druk (lpcvd).
JPH053258A (ja) * 1990-09-25 1993-01-08 Kawasaki Steel Corp 層間絶縁膜の形成方法
KR960010334B1 (en) * 1990-09-25 1996-07-30 Matsushita Electric Industrial Co Ltd Fabricating method of semiconductor device
JP2864806B2 (ja) * 1990-09-25 1999-03-08 松下電器産業株式会社 半導体装置の製造方法
JP2697315B2 (ja) * 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JPH04341568A (ja) * 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
JPH05226480A (ja) * 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US5633211A (en) 1997-05-27
DE69311184D1 (de) 1997-07-10
EP0562625A3 (https=) 1995-01-18
EP0562625A2 (en) 1993-09-29
KR970003724B1 (ko) 1997-03-21
EP0562625B1 (en) 1997-06-04
KR930020589A (ko) 1993-10-20

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