DE69301452T2 - Verfahren zur Herstellung eines teilsubstituierten Fluorosilans - Google Patents
Verfahren zur Herstellung eines teilsubstituierten FluorosilansInfo
- Publication number
- DE69301452T2 DE69301452T2 DE69301452T DE69301452T DE69301452T2 DE 69301452 T2 DE69301452 T2 DE 69301452T2 DE 69301452 T DE69301452 T DE 69301452T DE 69301452 T DE69301452 T DE 69301452T DE 69301452 T2 DE69301452 T2 DE 69301452T2
- Authority
- DE
- Germany
- Prior art keywords
- partially substituted
- purity
- znf2
- zinc
- fluorosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical class [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 23
- 238000002360 preparation method Methods 0.000 title description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 claims description 96
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000005046 Chlorosilane Substances 0.000 claims description 10
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 10
- 239000012025 fluorinating agent Substances 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- 150000002367 halogens Chemical group 0.000 claims description 9
- 238000006467 substitution reaction Methods 0.000 claims description 9
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 150000003752 zinc compounds Chemical class 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 4
- 235000004416 zinc carbonate Nutrition 0.000 claims description 4
- 239000011667 zinc carbonate Substances 0.000 claims description 4
- 229910000010 zinc carbonate Inorganic materials 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims description 3
- 150000008064 anhydrides Chemical class 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000012535 impurity Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 229910003816 SiH2F2 Inorganic materials 0.000 description 8
- MGNHOGAVECORPT-UHFFFAOYSA-N difluorosilicon Chemical compound F[Si]F MGNHOGAVECORPT-UHFFFAOYSA-N 0.000 description 8
- 229910004473 SiHF3 Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical class F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 6
- ATVLVRVBCRICNU-UHFFFAOYSA-N trifluorosilicon Chemical compound F[Si](F)F ATVLVRVBCRICNU-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910003824 SiH3F Inorganic materials 0.000 description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 4
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 3
- -1 fluorine ions Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910003826 SiH3Cl Inorganic materials 0.000 description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- RBHJBMIOOPYDBQ-UHFFFAOYSA-N carbon dioxide;propan-2-one Chemical compound O=C=O.CC(C)=O RBHJBMIOOPYDBQ-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- JBDOSUUXMYMWQH-UHFFFAOYSA-N 1-naphthyl isothiocyanate Chemical compound C1=CC=C2C(N=C=S)=CC=CC2=C1 JBDOSUUXMYMWQH-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ONIOAEVPMYCHKX-UHFFFAOYSA-N carbonic acid;zinc Chemical compound [Zn].OC(O)=O ONIOAEVPMYCHKX-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- PUUOOWSPWTVMDS-UHFFFAOYSA-N difluorosilane Chemical compound F[SiH2]F PUUOOWSPWTVMDS-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000003921 particle size analysis Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WPPVEXTUHHUEIV-UHFFFAOYSA-N trifluorosilane Chemical compound F[SiH](F)F WPPVEXTUHHUEIV-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31881692 | 1992-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69301452D1 DE69301452D1 (de) | 1996-03-14 |
| DE69301452T2 true DE69301452T2 (de) | 1996-08-01 |
Family
ID=18103270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69301452T Expired - Fee Related DE69301452T2 (de) | 1992-11-27 | 1993-11-24 | Verfahren zur Herstellung eines teilsubstituierten Fluorosilans |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5346682A (ko) |
| EP (1) | EP0599278B1 (ko) |
| KR (1) | KR960008620B1 (ko) |
| DE (1) | DE69301452T2 (ko) |
| TW (1) | TW240213B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015222019A1 (de) | 2015-11-09 | 2017-05-11 | Wacker Chemie Ag | Verfahren zur Herstellung von Cyanoalkylfluorsilanen |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2395826A (en) * | 1944-04-10 | 1946-03-05 | Du Pont | Preparation of chlorofluorosilanes |
| JPS604127B2 (ja) * | 1981-08-06 | 1985-02-01 | セントラル硝子株式会社 | 四弗化珪素ガスの精製法 |
| JPS61151015A (ja) * | 1984-12-24 | 1986-07-09 | Mitsui Toatsu Chem Inc | 部分置換フルオロシランの製造方法 |
| JPS61151016A (ja) * | 1984-12-24 | 1986-07-09 | Mitsui Toatsu Chem Inc | フルオロシランの製造方法 |
| JPS61232215A (ja) * | 1985-04-09 | 1986-10-16 | Central Glass Co Ltd | 部分フツ素化シランの製造法 |
| JPS63201013A (ja) * | 1987-02-12 | 1988-08-19 | Mitsui Toatsu Chem Inc | 部分フツ素化シランの製造方法 |
| JP2664772B2 (ja) * | 1989-05-17 | 1997-10-22 | 三井東圧化学株式会社 | 部分フッ素化シランの製造方法 |
| JPH05147920A (ja) * | 1991-11-26 | 1993-06-15 | Mitsui Toatsu Chem Inc | 部分置換フルオロシランの製造方法 |
| JPH05170422A (ja) * | 1991-12-24 | 1993-07-09 | Mitsui Toatsu Chem Inc | フルオロシラン用フッ化亜鉛の製造方法 |
-
1993
- 1993-11-24 US US08/156,702 patent/US5346682A/en not_active Expired - Fee Related
- 1993-11-24 DE DE69301452T patent/DE69301452T2/de not_active Expired - Fee Related
- 1993-11-24 EP EP93118847A patent/EP0599278B1/en not_active Expired - Lifetime
- 1993-11-25 KR KR1019930025174A patent/KR960008620B1/ko not_active IP Right Cessation
- 1993-12-09 TW TW082110429A patent/TW240213B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0599278A1 (en) | 1994-06-01 |
| KR940011353A (ko) | 1994-06-21 |
| KR960008620B1 (ko) | 1996-06-28 |
| EP0599278B1 (en) | 1996-01-31 |
| US5346682A (en) | 1994-09-13 |
| TW240213B (ko) | 1995-02-11 |
| DE69301452D1 (de) | 1996-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2743143A1 (de) | Polymorphes kristallines siliziumdioxid und verfahren zu seiner herstellung | |
| DE69300948T3 (de) | Neue grüne Lanthan-Terbium und Ceriumphosphat-Gemischsleuchtstoffe, Vorläufer davon und Verfahren zur Herstellung. | |
| DE69415957T2 (de) | Metalloxidpulver und verfahren zu dessen herstellung | |
| DE69015209T2 (de) | Verfahren zur herstellung hochgleichmässiger kieselsäurekugeln. | |
| DE2643929C2 (de) | Verfahren zur Herstellung von Zeolith | |
| DE3201116C2 (de) | Verfahren zur Herstellung von Graphitfluorid | |
| DE3708894C2 (ko) | ||
| DE69609699T2 (de) | Klathrat-Verbindungen und Verfahren zu ihrer Herstellung | |
| DE3015037A1 (de) | Kristallines siliciumdioxid und dessen verwendung bei der alkylierung vor aromatischen verbindungen | |
| DE3687605T2 (de) | Anorganische anionenaustauscher und deren herstellung. | |
| DE68906952T2 (de) | Zeolithe auf Basis von Siliziumdioxid und Germaniumoxid sowie Verfahren zu deren Synthese. | |
| Price et al. | The structure of phosphorus-selenium glasses I. Concentration dependence of the short-and intermediate-range order | |
| DE69908422T2 (de) | Zeolith itq-7 | |
| DE1906197A1 (de) | Verfahren zur Entfernung von borhaltigen Verunreinigungen aus Chlorsilanverbindungen | |
| DE10046635A1 (de) | Poröse Materialien und Verfahren zu deren Herstellung | |
| DE4319372C2 (de) | Magnesiumhydroxid und Verfahren zu dessen Herstellung | |
| DE3915301A1 (de) | Natrium-entfernung aus salzlaugen | |
| EP0747164A1 (de) | Verfahren zur Herstellung eines Lötflussmittels | |
| DE69301452T2 (de) | Verfahren zur Herstellung eines teilsubstituierten Fluorosilans | |
| DE3719049A1 (de) | Verfahren zum einbau von silicium-atomen anstelle von aluminiumatomen im kristallgitter eines zeolithen des faujasit-typs | |
| EP0088372B1 (de) | Verfahren zur Herstellung eines synthetischen Hectorits | |
| DE1671173A1 (de) | Dielektrikum mit hoher,temperaturbestaendiger Dielektrizitaetskonstante und Verfahren zu seiner Herstellung | |
| DE2807388A1 (de) | Uebergangsmetall-dichalcogenide, verfahren zu ihrer herstellung und ihre verwendung | |
| DE69007586T2 (de) | Herstellung und Benutzung von kristallinen Wasserstoff-Phosphat-Zusammensetzungen mit einer Schichtstruktur. | |
| DE4201484A1 (de) | Anorganische mikroporoese festkoerper sowie verfahren zu ihrer herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: MITSUI CHEMICALS, INC., TOKIO/TOKYO, JP |
|
| 8339 | Ceased/non-payment of the annual fee |