DE69232210T2 - Nicht-flüchtige Halbleiter-Speicher-Vorrichtung - Google Patents
Nicht-flüchtige Halbleiter-Speicher-VorrichtungInfo
- Publication number
- DE69232210T2 DE69232210T2 DE1992632210 DE69232210T DE69232210T2 DE 69232210 T2 DE69232210 T2 DE 69232210T2 DE 1992632210 DE1992632210 DE 1992632210 DE 69232210 T DE69232210 T DE 69232210T DE 69232210 T2 DE69232210 T2 DE 69232210T2
- Authority
- DE
- Germany
- Prior art keywords
- current
- power supply
- memory cell
- line
- supply line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/81—Threshold
Landscapes
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3346663A JP2732471B2 (ja) | 1991-12-27 | 1991-12-27 | 不揮発性半導体記憶装置 |
JP19179392A JPH0636581A (ja) | 1992-07-20 | 1992-07-20 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69232210D1 DE69232210D1 (de) | 2001-12-20 |
DE69232210T2 true DE69232210T2 (de) | 2002-05-02 |
Family
ID=26506902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1992632210 Expired - Fee Related DE69232210T2 (de) | 1991-12-27 | 1992-12-29 | Nicht-flüchtige Halbleiter-Speicher-Vorrichtung |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0903752B1 (de) |
DE (1) | DE69232210T2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112837717A (zh) * | 2019-11-25 | 2021-05-25 | 补丁科技股份有限公司 | 用来在存储器模块中增加数据预取数量的装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4823031A (en) * | 1988-02-01 | 1989-04-18 | Texas Instruments Incorporated | Single-ended sense amplifier with positive feedback |
JPH03241594A (ja) * | 1990-02-19 | 1991-10-28 | Fujitsu Ltd | 半導体メモリのセンス回路 |
JPH04238197A (ja) * | 1991-01-22 | 1992-08-26 | Nec Corp | センスアンプ回路 |
-
1992
- 1992-12-29 EP EP98121757A patent/EP0903752B1/de not_active Expired - Lifetime
- 1992-12-29 DE DE1992632210 patent/DE69232210T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0903752A3 (de) | 1999-04-28 |
EP0903752B1 (de) | 2001-11-14 |
DE69232210D1 (de) | 2001-12-20 |
EP0903752A2 (de) | 1999-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100211482B1 (ko) | 감소 칩 영역을 가진 반도체 메모리 소자 | |
KR890015273A (ko) | 불휘발성 반도체기억장치 | |
US4933906A (en) | Non-volatile semiconductor memory device | |
KR920018766A (ko) | 불휘발성 반도체 기억장치 | |
DE69229437T2 (de) | Nicht-flüchtiger Halbleiterspeicher | |
JPH04216397A (ja) | フローティングゲート型メモリセル内に記憶されるデータ読み取り用センス回路 | |
KR920008767A (ko) | 비휘발성 반도체 메모리 디바이스 | |
KR930003138A (ko) | 다이나믹형 반도체 기억장치 | |
KR870009395A (ko) | 불휘발성 메모리 회로 | |
KR900004327B1 (ko) | 센스증폭기와 프로그래밍회로 각각에 독립으로 칼럼 트랜지스터 게이트 트랜스터 그룹을 갖게한 반도체 기억장치 | |
EP0834883A3 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
KR920015384A (ko) | 반도체 메모리 장치 | |
JP2007035122A (ja) | 磁気メモリデバイス | |
DE69232210D1 (de) | Nicht-flüchtige Halbleiter-Speicher-Vorrichtung | |
US4899309A (en) | Current sense circuit for a ROM system | |
KR920000077A (ko) | 비휘발성 메모리 장치용 기입회로 | |
JPH05128858A (ja) | 半導体記憶装置 | |
JP2732471B2 (ja) | 不揮発性半導体記憶装置 | |
KR0168159B1 (ko) | 플래쉬 메모리 장치 | |
JP3288760B2 (ja) | 半導体メモリ装置 | |
KR930000814B1 (ko) | 불휘발성 반도체기억장치 | |
KR100466937B1 (ko) | 반도체메모리장치 | |
JPH04113596A (ja) | 半導体記憶装置 | |
KR930011354B1 (ko) | 데이타버스선 전압레벨 제어회로 | |
JP2960144B2 (ja) | 半導体メモリ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |