DE69231482T2 - Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD) - Google Patents
Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD)Info
- Publication number
- DE69231482T2 DE69231482T2 DE69231482T DE69231482T DE69231482T2 DE 69231482 T2 DE69231482 T2 DE 69231482T2 DE 69231482 T DE69231482 T DE 69231482T DE 69231482 T DE69231482 T DE 69231482T DE 69231482 T2 DE69231482 T2 DE 69231482T2
- Authority
- DE
- Germany
- Prior art keywords
- charge
- ccd
- multiplication
- cmd
- potential well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 239000004065 semiconductor Substances 0.000 description 2
- 238000009416 shuttering Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
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- 238000010351 charge transfer process Methods 0.000 description 1
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- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/454—Output structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/468—Four-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72842791A | 1991-07-11 | 1991-07-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69231482D1 DE69231482D1 (de) | 2000-11-02 |
| DE69231482T2 true DE69231482T2 (de) | 2001-05-10 |
Family
ID=24926813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69231482T Expired - Fee Related DE69231482T2 (de) | 1991-07-11 | 1992-07-10 | Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD) |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5337340A (enExample) |
| EP (1) | EP0526993B1 (enExample) |
| KR (1) | KR100298039B1 (enExample) |
| DE (1) | DE69231482T2 (enExample) |
| TW (1) | TW208094B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7576316B2 (en) | 2006-01-07 | 2009-08-18 | Leica Microsystems Cms Gmbh | Apparatus, microscope with an apparatus, and method for calibration of a photosensor chip |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
| US6320617B1 (en) | 1995-11-07 | 2001-11-20 | Eastman Kodak Company | CMOS active pixel sensor using a pinned photo diode |
| US7179222B2 (en) | 1996-11-20 | 2007-02-20 | Olympus Corporation | Fluorescent endoscope system enabling simultaneous achievement of normal light observation based on reflected light and fluorescence observation based on light with wavelengths in infrared spectrum |
| US6297070B1 (en) | 1996-12-20 | 2001-10-02 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
| US5903021A (en) * | 1997-01-17 | 1999-05-11 | Eastman Kodak Company | Partially pinned photodiode for solid state image sensors |
| GB2323471B (en) | 1997-03-22 | 2002-04-17 | Eev Ltd | CCd imagers |
| US6492694B2 (en) | 1998-02-27 | 2002-12-10 | Micron Technology, Inc. | Highly conductive composite polysilicon gate for CMOS integrated circuits |
| GB9828166D0 (en) * | 1998-12-22 | 1999-02-17 | Eev Ltd | Imaging apparatus |
| DE60021679T2 (de) | 1999-05-18 | 2006-06-08 | Olympus Corporation | Endoskop |
| JP4347948B2 (ja) * | 1999-05-28 | 2009-10-21 | Ｈｏｙａ株式会社 | 撮像素子駆動装置 |
| US6278142B1 (en) * | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
| US7420605B2 (en) * | 2001-01-18 | 2008-09-02 | E2V Technologies (Uk) Limited | Solid state imager arrangements |
| GB2371403B (en) * | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
| US7139023B2 (en) * | 2001-03-12 | 2006-11-21 | Texas Instruments Incorporated | High dynamic range charge readout system |
| JP2002345733A (ja) * | 2001-05-29 | 2002-12-03 | Fuji Photo Film Co Ltd | 撮像装置 |
| JP2003000537A (ja) * | 2001-06-27 | 2003-01-07 | Fuji Photo Film Co Ltd | 内視鏡用の撮像方法および装置 |
| US6784412B2 (en) * | 2001-08-29 | 2004-08-31 | Texas Instruments Incorporated | Compact image sensor layout with charge multiplying register |
| JP4772235B2 (ja) | 2001-09-13 | 2011-09-14 | オリンパス株式会社 | 内視鏡装置 |
| JP3689866B2 (ja) | 2002-05-30 | 2005-08-31 | 日本テキサス・インスツルメンツ株式会社 | Ｃｍｄ及びｃｍｄ搭載ｃｃｄ装置 |
| JP4285641B2 (ja) * | 2002-08-30 | 2009-06-24 | 富士フイルム株式会社 | 撮像装置 |
| JP2005006856A (ja) * | 2003-06-18 | 2005-01-13 | Olympus Corp | 内視鏡装置 |
| JP4343594B2 (ja) * | 2003-06-23 | 2009-10-14 | オリンパス株式会社 | 内視鏡装置 |
| US20050029553A1 (en) * | 2003-08-04 | 2005-02-10 | Jaroslav Hynecek | Clocked barrier virtual phase charge coupled device image sensor |
| JP2005131129A (ja) * | 2003-10-30 | 2005-05-26 | Olympus Corp | 撮像装置及び内視鏡装置 |
| US7999214B2 (en) * | 2003-12-19 | 2011-08-16 | The Invention Science Fund I, Llc | Photo-detector filter having a cascaded low noise amplifier |
| US7098439B2 (en) * | 2003-12-22 | 2006-08-29 | Searete Llc | Augmented photo-detector filter |
| US7714267B2 (en) * | 2003-12-19 | 2010-05-11 | Searete, Llc | Intensity detector circuitry using a cascade of gain elements |
| US7511254B2 (en) * | 2003-12-19 | 2009-03-31 | Searete, Llc | Photo-detector filter having a cascaded low noise amplifier |
| JP3813961B2 (ja) * | 2004-02-04 | 2006-08-23 | オリンパス株式会社 | 内視鏡用信号処理装置 |
| JP4504040B2 (ja) * | 2004-02-05 | 2010-07-14 | オリンパス株式会社 | 内視鏡装置 |
| GB2413007A (en) * | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
| US7378634B2 (en) * | 2004-07-27 | 2008-05-27 | Sarnoff Corporation | Imaging methods and apparatus having extended dynamic range |
| US7522205B2 (en) * | 2004-09-10 | 2009-04-21 | Eastman Kodak Company | Image sensor with charge multiplication |
| GB0501149D0 (en) * | 2005-01-20 | 2005-02-23 | Andor Technology Plc | Automatic calibration of electron multiplying CCds |
| JP4751617B2 (ja) | 2005-01-21 | 2011-08-17 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| US20060176481A1 (en) * | 2005-02-10 | 2006-08-10 | Massachusetts Institute Of Technology | End-column fluorescence detection for capillary array electrophoresis |
| GB2424758A (en) * | 2005-03-31 | 2006-10-04 | E2V Tech | CCD device |
| GB2431538B (en) * | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
| GB2435126A (en) * | 2006-02-14 | 2007-08-15 | E2V Tech | EMCCD device with multiplication register gain measurement allowing realtime calibration of a camera in use. |
| JP2007324304A (ja) * | 2006-05-31 | 2007-12-13 | Fujifilm Corp | 固体撮像素子及び撮像装置 |
| JP2008060550A (ja) * | 2006-07-31 | 2008-03-13 | Sanyo Electric Co Ltd | 撮像装置 |
| JP5037078B2 (ja) * | 2006-09-15 | 2012-09-26 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
| US7485840B2 (en) * | 2007-02-08 | 2009-02-03 | Dalsa Corporation | Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device |
| JP4958602B2 (ja) * | 2007-03-30 | 2012-06-20 | 富士フイルム株式会社 | 撮像装置及びその画像合成方法 |
| JP2008271049A (ja) * | 2007-04-18 | 2008-11-06 | Hamamatsu Photonics Kk | 撮像装置及びそのゲイン調整方法 |
| JP4851388B2 (ja) * | 2007-05-16 | 2012-01-11 | 浜松ホトニクス株式会社 | 撮像装置 |
| US7969492B2 (en) * | 2007-08-28 | 2011-06-28 | Sanyo Electric Co., Ltd. | Image pickup apparatus |
| GB0717484D0 (en) * | 2007-09-07 | 2007-10-17 | E2V Tech Uk Ltd | Gain measurement method |
| US7755685B2 (en) * | 2007-09-28 | 2010-07-13 | Sarnoff Corporation | Electron multiplication CMOS imager |
| US7948536B2 (en) * | 2008-05-29 | 2011-05-24 | Sri International | Gain matching for electron multiplication imager |
| JP5270392B2 (ja) * | 2009-01-30 | 2013-08-21 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| JP5237843B2 (ja) | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| JP5243984B2 (ja) * | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
| JP5243983B2 (ja) * | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
| JP5335459B2 (ja) * | 2009-01-30 | 2013-11-06 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
| FR2945668B1 (fr) * | 2009-05-14 | 2011-12-16 | Commissariat Energie Atomique | Capteur d'image pour imagerie a tres bas niveau de lumiere. |
| US8605181B2 (en) | 2010-11-29 | 2013-12-10 | Teledyne Dalsa B.V. | Pixel for correlated double sampling with global shutter |
| US8553126B2 (en) | 2010-12-14 | 2013-10-08 | Truesense Imaging, Inc. | Image sensor with charge multiplication |
| US8493492B2 (en) | 2010-12-14 | 2013-07-23 | Truesense Imaging, Inc. | Method of producing an image with pixel signals produced by an image sensor that includes multiple output channels |
| US8773564B2 (en) | 2010-12-14 | 2014-07-08 | Truesense Imaging, Inc. | Image sensor with charge multiplication |
| US8479374B2 (en) | 2010-12-14 | 2013-07-09 | Truesense Imaging, Inc. | Method of producing an image sensor having multiple output channels |
| US8493491B2 (en) | 2010-12-14 | 2013-07-23 | Truesense Imaging, Inc. | Methods for processing an image captured by an image sensor having multiple output channels |
| US8800130B2 (en) | 2011-05-25 | 2014-08-12 | Truesense Imaging, Inc. | Methods for producing image sensors having multi-purpose architecture |
| US8411189B2 (en) | 2011-05-25 | 2013-04-02 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
| US8773563B2 (en) | 2011-05-25 | 2014-07-08 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
| US8847285B2 (en) | 2011-09-26 | 2014-09-30 | Semiconductor Components Industries, Llc | Depleted charge-multiplying CCD image sensor |
| JP5924132B2 (ja) * | 2012-05-28 | 2016-05-25 | 株式会社デンソー | 固体撮像素子 |
| US10468383B2 (en) | 2015-01-16 | 2019-11-05 | Makoto Shizukuishi | Semiconductor device and manufacturing method thereof |
| US9905608B1 (en) * | 2017-01-11 | 2018-02-27 | Semiconductor Components Industries, Llc | EMCCD image sensor with stable charge multiplication gain |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3654499A (en) * | 1970-06-24 | 1972-04-04 | Bell Telephone Labor Inc | Charge coupled memory with storage sites |
| US3761744A (en) * | 1971-12-02 | 1973-09-25 | Bell Telephone Labor Inc | Semiconductor charge transfer devices |
| US3906543A (en) * | 1971-12-23 | 1975-09-16 | Bell Telephone Labor Inc | Solid state imaging apparatus employing charge transfer devices |
| US3792465A (en) * | 1971-12-30 | 1974-02-12 | Texas Instruments Inc | Charge transfer solid state display |
| US3973136A (en) * | 1973-11-02 | 1976-08-03 | Lee William W Y | Charge coupled display device |
| US3934161A (en) * | 1974-04-29 | 1976-01-20 | Texas Instruments Incorporated | Electronic shutter for a charge-coupled imager |
| US4679212A (en) * | 1984-07-31 | 1987-07-07 | Texas Instruments Incorporated | Method and apparatus for using surface trap recombination in solid state imaging devices |
| US4656503A (en) * | 1985-08-27 | 1987-04-07 | Texas Instruments Incorporated | Color CCD imager with minimal clock lines |
| US4912536A (en) * | 1988-04-15 | 1990-03-27 | Northrop Corporation | Charge accumulation and multiplication photodetector |
-
1992
- 1992-07-10 EP EP92306334A patent/EP0526993B1/en not_active Expired - Lifetime
- 1992-07-10 DE DE69231482T patent/DE69231482T2/de not_active Expired - Fee Related
- 1992-07-10 KR KR1019920012284A patent/KR100298039B1/ko not_active Expired - Lifetime
- 1992-11-05 TW TW081108833A patent/TW208094B/zh active
-
1993
- 1993-02-17 US US08/019,995 patent/US5337340A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7576316B2 (en) | 2006-01-07 | 2009-08-18 | Leica Microsystems Cms Gmbh | Apparatus, microscope with an apparatus, and method for calibration of a photosensor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69231482D1 (de) | 2000-11-02 |
| EP0526993A1 (en) | 1993-02-10 |
| TW208094B (enExample) | 1993-06-21 |
| KR100298039B1 (ko) | 2001-10-24 |
| KR930003437A (ko) | 1993-02-24 |
| EP0526993B1 (en) | 2000-09-27 |
| US5337340A (en) | 1994-08-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |