DE69231482D1 - Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD) - Google Patents

Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD)

Info

Publication number
DE69231482D1
DE69231482D1 DE69231482T DE69231482T DE69231482D1 DE 69231482 D1 DE69231482 D1 DE 69231482D1 DE 69231482 T DE69231482 T DE 69231482T DE 69231482 T DE69231482 T DE 69231482T DE 69231482 D1 DE69231482 D1 DE 69231482D1
Authority
DE
Germany
Prior art keywords
cmd
image sensor
ccd image
pixel size
small pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69231482T
Other languages
English (en)
Other versions
DE69231482T2 (de
Inventor
Jaroslav Hynecek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69231482D1 publication Critical patent/DE69231482D1/de
Application granted granted Critical
Publication of DE69231482T2 publication Critical patent/DE69231482T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69231482T 1991-07-11 1992-07-10 Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD) Expired - Fee Related DE69231482T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72842791A 1991-07-11 1991-07-11

Publications (2)

Publication Number Publication Date
DE69231482D1 true DE69231482D1 (de) 2000-11-02
DE69231482T2 DE69231482T2 (de) 2001-05-10

Family

ID=24926813

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231482T Expired - Fee Related DE69231482T2 (de) 1991-07-11 1992-07-10 Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD)

Country Status (5)

Country Link
US (1) US5337340A (de)
EP (1) EP0526993B1 (de)
KR (1) KR100298039B1 (de)
DE (1) DE69231482T2 (de)
TW (1) TW208094B (de)

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US7139023B2 (en) * 2001-03-12 2006-11-21 Texas Instruments Incorporated High dynamic range charge readout system
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JP2003000537A (ja) * 2001-06-27 2003-01-07 Fuji Photo Film Co Ltd 内視鏡用の撮像方法および装置
US6784412B2 (en) * 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
JP4772235B2 (ja) * 2001-09-13 2011-09-14 オリンパス株式会社 内視鏡装置
JP3689866B2 (ja) 2002-05-30 2005-08-31 日本テキサス・インスツルメンツ株式会社 Ｃｍｄ及びｃｍｄ搭載ｃｃｄ装置
JP4285641B2 (ja) * 2002-08-30 2009-06-24 富士フイルム株式会社 撮像装置
JP2005006856A (ja) * 2003-06-18 2005-01-13 Olympus Corp 内視鏡装置
JP4343594B2 (ja) * 2003-06-23 2009-10-14 オリンパス株式会社 内視鏡装置
US20050029553A1 (en) * 2003-08-04 2005-02-10 Jaroslav Hynecek Clocked barrier virtual phase charge coupled device image sensor
JP2005131129A (ja) * 2003-10-30 2005-05-26 Olympus Corp 撮像装置及び内視鏡装置
US7714267B2 (en) * 2003-12-19 2010-05-11 Searete, Llc Intensity detector circuitry using a cascade of gain elements
US7098439B2 (en) * 2003-12-22 2006-08-29 Searete Llc Augmented photo-detector filter
US7999214B2 (en) * 2003-12-19 2011-08-16 The Invention Science Fund I, Llc Photo-detector filter having a cascaded low noise amplifier
US7511254B2 (en) * 2003-12-19 2009-03-31 Searete, Llc Photo-detector filter having a cascaded low noise amplifier
JP3813961B2 (ja) * 2004-02-04 2006-08-23 オリンパス株式会社 内視鏡用信号処理装置
JP4504040B2 (ja) * 2004-02-05 2010-07-14 オリンパス株式会社 内視鏡装置
GB2413007A (en) * 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge
US7378634B2 (en) * 2004-07-27 2008-05-27 Sarnoff Corporation Imaging methods and apparatus having extended dynamic range
US7522205B2 (en) * 2004-09-10 2009-04-21 Eastman Kodak Company Image sensor with charge multiplication
GB0501149D0 (en) * 2005-01-20 2005-02-23 Andor Technology Plc Automatic calibration of electron multiplying CCds
JP4751617B2 (ja) * 2005-01-21 2011-08-17 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
US20060176481A1 (en) * 2005-02-10 2006-08-10 Massachusetts Institute Of Technology End-column fluorescence detection for capillary array electrophoresis
GB2424758A (en) * 2005-03-31 2006-10-04 E2V Tech CCD device
GB2431538B (en) * 2005-10-24 2010-12-22 E2V Tech CCD device
DE102006000976A1 (de) 2006-01-07 2007-07-12 Leica Microsystems Cms Gmbh Vorrichtung, Mikroskop mit Vorrichtung und Verfahren zum Kalibrieren eines Photosensor-Chips
GB2435126A (en) * 2006-02-14 2007-08-15 E2V Tech EMCCD device with multiplication register gain measurement allowing realtime calibration of a camera in use.
JP2007324304A (ja) * 2006-05-31 2007-12-13 Fujifilm Corp 固体撮像素子及び撮像装置
JP2008060550A (ja) * 2006-07-31 2008-03-13 Sanyo Electric Co Ltd 撮像装置
JP5037078B2 (ja) * 2006-09-15 2012-09-26 富士フイルム株式会社 固体撮像素子およびその駆動方法
US7485840B2 (en) * 2007-02-08 2009-02-03 Dalsa Corporation Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device
JP4958602B2 (ja) * 2007-03-30 2012-06-20 富士フイルム株式会社 撮像装置及びその画像合成方法
JP2008271049A (ja) * 2007-04-18 2008-11-06 Hamamatsu Photonics Kk 撮像装置及びそのゲイン調整方法
JP4851388B2 (ja) * 2007-05-16 2012-01-11 浜松ホトニクス株式会社 撮像装置
US7969492B2 (en) * 2007-08-28 2011-06-28 Sanyo Electric Co., Ltd. Image pickup apparatus
GB0717484D0 (en) * 2007-09-07 2007-10-17 E2V Tech Uk Ltd Gain measurement method
US7755685B2 (en) * 2007-09-28 2010-07-13 Sarnoff Corporation Electron multiplication CMOS imager
US7948536B2 (en) * 2008-05-29 2011-05-24 Sri International Gain matching for electron multiplication imager
JP5243984B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5335459B2 (ja) * 2009-01-30 2013-11-06 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5270392B2 (ja) * 2009-01-30 2013-08-21 浜松ホトニクス株式会社 固体撮像装置
JP5237843B2 (ja) * 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
FR2945668B1 (fr) * 2009-05-14 2011-12-16 Commissariat Energie Atomique Capteur d'image pour imagerie a tres bas niveau de lumiere.
US8605181B2 (en) 2010-11-29 2013-12-10 Teledyne Dalsa B.V. Pixel for correlated double sampling with global shutter
US8553126B2 (en) 2010-12-14 2013-10-08 Truesense Imaging, Inc. Image sensor with charge multiplication
US8493492B2 (en) 2010-12-14 2013-07-23 Truesense Imaging, Inc. Method of producing an image with pixel signals produced by an image sensor that includes multiple output channels
US8773564B2 (en) 2010-12-14 2014-07-08 Truesense Imaging, Inc. Image sensor with charge multiplication
US8493491B2 (en) 2010-12-14 2013-07-23 Truesense Imaging, Inc. Methods for processing an image captured by an image sensor having multiple output channels
US8479374B2 (en) 2010-12-14 2013-07-09 Truesense Imaging, Inc. Method of producing an image sensor having multiple output channels
US8411189B2 (en) 2011-05-25 2013-04-02 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
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JP5924132B2 (ja) * 2012-05-28 2016-05-25 株式会社デンソー 固体撮像素子
WO2016114377A1 (ja) 2015-01-16 2016-07-21 雫石　誠 半導体素子とその製造方法
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Also Published As

Publication number Publication date
EP0526993B1 (de) 2000-09-27
KR930003437A (ko) 1993-02-24
TW208094B (de) 1993-06-21
EP0526993A1 (de) 1993-02-10
DE69231482T2 (de) 2001-05-10
US5337340A (en) 1994-08-09
KR100298039B1 (ko) 2001-10-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee