DE69230698T2 - Supraleitender Feldeffekttransistor und Verfahren zur Herstellung einer Mehrfachlagenstruktur für diesen Transistor - Google Patents

Supraleitender Feldeffekttransistor und Verfahren zur Herstellung einer Mehrfachlagenstruktur für diesen Transistor

Info

Publication number
DE69230698T2
DE69230698T2 DE69230698T DE69230698T DE69230698T2 DE 69230698 T2 DE69230698 T2 DE 69230698T2 DE 69230698 T DE69230698 T DE 69230698T DE 69230698 T DE69230698 T DE 69230698T DE 69230698 T2 DE69230698 T2 DE 69230698T2
Authority
DE
Germany
Prior art keywords
superconducting
layer
superconducting layer
thickness
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69230698T
Other languages
German (de)
English (en)
Other versions
DE69230698D1 (de
Inventor
Pierre Bernstein
Julien Bok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SAS
Original Assignee
Bull SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SAS filed Critical Bull SAS
Publication of DE69230698D1 publication Critical patent/DE69230698D1/de
Application granted granted Critical
Publication of DE69230698T2 publication Critical patent/DE69230698T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
DE69230698T 1991-03-22 1992-03-16 Supraleitender Feldeffekttransistor und Verfahren zur Herstellung einer Mehrfachlagenstruktur für diesen Transistor Expired - Fee Related DE69230698T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9103529A FR2674374A1 (fr) 1991-03-22 1991-03-22 Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.

Publications (2)

Publication Number Publication Date
DE69230698D1 DE69230698D1 (de) 2000-03-30
DE69230698T2 true DE69230698T2 (de) 2000-06-15

Family

ID=9411041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69230698T Expired - Fee Related DE69230698T2 (de) 1991-03-22 1992-03-16 Supraleitender Feldeffekttransistor und Verfahren zur Herstellung einer Mehrfachlagenstruktur für diesen Transistor

Country Status (5)

Country Link
EP (1) EP0505259B1 (enExample)
JP (2) JP2591559B2 (enExample)
DE (1) DE69230698T2 (enExample)
ES (1) ES2143986T3 (enExample)
FR (1) FR2674374A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0533519B1 (en) * 1991-08-26 1996-04-24 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
US5399546A (en) * 1991-11-30 1995-03-21 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
EP0546959B1 (en) * 1991-12-13 1997-10-01 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
JPH0831625B2 (ja) * 1992-10-30 1996-03-27 株式会社日立製作所 超電導三端子素子
FR2835353A1 (fr) * 2002-01-25 2003-08-01 Wintici Dispositifs electroniques de commande a base de materiau supraconducteur
CN102664153B (zh) * 2012-05-08 2016-04-06 肖德元 一种超导场效应晶体管、其制作方法及应用方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160273A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 高速半導体装置
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.
JPH0260176A (ja) * 1988-08-26 1990-02-28 Japan Aviation Electron Ind Ltd アハロノフ・ボーム効果トランジスタ
EP0494580B1 (en) * 1991-01-07 2002-04-03 International Business Machines Corporation Superconducting field-effect transistor with inverted MISFET structure and method for making the same

Also Published As

Publication number Publication date
JP2591559B2 (ja) 1997-03-19
DE69230698D1 (de) 2000-03-30
JPH06237023A (ja) 1994-08-23
EP0505259A2 (fr) 1992-09-23
FR2674374A1 (fr) 1992-09-25
FR2674374B1 (enExample) 1997-02-07
EP0505259A3 (en) 1993-01-27
EP0505259B1 (fr) 2000-02-23
ES2143986T3 (es) 2000-06-01
JPH08191157A (ja) 1996-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee