DE69214500T2 - Josephsonjunctionstruktur - Google Patents
JosephsonjunctionstrukturInfo
- Publication number
- DE69214500T2 DE69214500T2 DE69214500T DE69214500T DE69214500T2 DE 69214500 T2 DE69214500 T2 DE 69214500T2 DE 69214500 T DE69214500 T DE 69214500T DE 69214500 T DE69214500 T DE 69214500T DE 69214500 T2 DE69214500 T2 DE 69214500T2
- Authority
- DE
- Germany
- Prior art keywords
- junction structure
- josephson junction
- josephson
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/775—High tc, above 30 k, superconducting material
- Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
- Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/775—High tc, above 30 k, superconducting material
- Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
- Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
- Y10S505/78—Yttrium and barium-, e.g. YBa2Cu307
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/873—Active solid-state device
- Y10S505/874—Active solid-state device with josephson junction, e.g. squid
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9104996A FR2675951B1 (fr) | 1991-04-23 | 1991-04-23 | Structure de jonction josephson. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69214500D1 DE69214500D1 (de) | 1996-11-21 |
DE69214500T2 true DE69214500T2 (de) | 1997-02-20 |
Family
ID=9412162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69214500T Expired - Fee Related DE69214500T2 (de) | 1991-04-23 | 1992-04-17 | Josephsonjunctionstruktur |
Country Status (5)
Country | Link |
---|---|
US (1) | US5378683A (de) |
EP (1) | EP0511056B1 (de) |
JP (1) | JPH05160449A (de) |
DE (1) | DE69214500T2 (de) |
FR (1) | FR2675951B1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6326003B1 (en) | 1986-10-14 | 2001-12-04 | Chiron Corporation | Manganese superoxide dismutase cloning and expression in microorganisms |
DE69422666T2 (de) * | 1993-07-02 | 2000-07-27 | Sumitomo Electric Industries | Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms |
FR2734058B1 (fr) * | 1995-05-12 | 1997-06-20 | Thomson Csf | Amperemetre |
US5856204A (en) * | 1995-09-28 | 1999-01-05 | Matsushita Electric Industrial Co., Ltd. | Tunnel-type Josephson element and method for manufacturing the same |
KR0175359B1 (ko) * | 1995-12-15 | 1999-02-01 | 양승택 | 초전도체-절연체-초전도체 조셉슨 터널 접합구조의 제조방법 |
US5776863A (en) * | 1996-07-08 | 1998-07-07 | Trw Inc. | In-situ fabrication of a superconductor hetero-epitaxial Josephson junction |
DE59708448D1 (de) * | 1996-08-27 | 2002-11-14 | Forschungszentrum Juelich Gmbh | Schichtenfolge sowie eine solche enthaltendes bauelement |
US5892243A (en) * | 1996-12-06 | 1999-04-06 | Trw Inc. | High-temperature SSNS and SNS Josephson junction and method of making junction |
US6022832A (en) | 1997-09-23 | 2000-02-08 | American Superconductor Corporation | Low vacuum vapor process for producing superconductor articles with epitaxial layers |
US6027564A (en) * | 1997-09-23 | 2000-02-22 | American Superconductor Corporation | Low vacuum vapor process for producing epitaxial layers |
US6458223B1 (en) | 1997-10-01 | 2002-10-01 | American Superconductor Corporation | Alloy materials |
US6428635B1 (en) | 1997-10-01 | 2002-08-06 | American Superconductor Corporation | Substrates for superconductors |
US6475311B1 (en) | 1999-03-31 | 2002-11-05 | American Superconductor Corporation | Alloy materials |
CN100568964C (zh) * | 2003-02-18 | 2009-12-09 | 诺基亚有限公司 | 图像解码方法 |
CA2515354C (en) * | 2003-02-18 | 2013-08-06 | Nokia Corporation | A method for buffering media data in systems where decoding order is different from transmission order |
US9124907B2 (en) * | 2004-10-04 | 2015-09-01 | Nokia Technologies Oy | Picture buffering method |
US8204564B2 (en) * | 2007-11-07 | 2012-06-19 | Brookhaven Science Associates, Llc | High temperature interfacial superconductivity |
FR2966636B1 (fr) * | 2010-10-26 | 2012-12-14 | Centre Nat Rech Scient | Element magnetique inscriptible |
US10333047B2 (en) * | 2011-03-30 | 2019-06-25 | Ambatrue, Inc. | Electrical, mechanical, computing/ and/or other devices formed of extremely low resistance materials |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439084A (en) * | 1987-08-04 | 1989-02-09 | Mitsubishi Electric Corp | Josephson element |
FR2626409B1 (fr) * | 1988-01-22 | 1991-09-06 | Thomson Csf | Dispositif en materiau supraconducteur et procede de realisation |
EP0365630B1 (de) * | 1988-03-25 | 1994-03-02 | Thomson-Csf | Herstellungsverfahren von feldemissions-elektronenquellen und anwendung zur herstellung von emitter-matrizen |
FR2629636B1 (fr) * | 1988-04-05 | 1990-11-16 | Thomson Csf | Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant |
US5047390A (en) * | 1988-10-03 | 1991-09-10 | Matsushita Electric Industrial Co., Ltd. | Josephson devices and process for manufacturing the same |
JPH03153089A (ja) * | 1989-11-10 | 1991-07-01 | Sumitomo Electric Ind Ltd | 複合酸化物超電導材料を用いたトンネル接合素子 |
-
1991
- 1991-04-23 FR FR9104996A patent/FR2675951B1/fr not_active Expired - Fee Related
-
1992
- 1992-04-17 EP EP92401079A patent/EP0511056B1/de not_active Expired - Lifetime
- 1992-04-17 DE DE69214500T patent/DE69214500T2/de not_active Expired - Fee Related
- 1992-04-21 US US07/871,537 patent/US5378683A/en not_active Expired - Fee Related
- 1992-04-23 JP JP4129374A patent/JPH05160449A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0511056B1 (de) | 1996-10-16 |
DE69214500D1 (de) | 1996-11-21 |
FR2675951A1 (fr) | 1992-10-30 |
EP0511056A1 (de) | 1992-10-28 |
FR2675951B1 (fr) | 1997-08-29 |
US5378683A (en) | 1995-01-03 |
JPH05160449A (ja) | 1993-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |