DE69119190T2 - Supraleitende Einrichtung mit extrem dünnen supraleitenden Kanal aus oxydischem supraleitendem Material und Methode zu deren Herstellung - Google Patents

Supraleitende Einrichtung mit extrem dünnen supraleitenden Kanal aus oxydischem supraleitendem Material und Methode zu deren Herstellung

Info

Publication number
DE69119190T2
DE69119190T2 DE69119190T DE69119190T DE69119190T2 DE 69119190 T2 DE69119190 T2 DE 69119190T2 DE 69119190 T DE69119190 T DE 69119190T DE 69119190 T DE69119190 T DE 69119190T DE 69119190 T2 DE69119190 T2 DE 69119190T2
Authority
DE
Germany
Prior art keywords
superconducting
production
oxidic
extremely thin
channel made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119190T
Other languages
English (en)
Other versions
DE69119190D1 (de
Inventor
Hiroshi Inada
Takao Nakamura
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2295659A external-priority patent/JP2647251B2/ja
Priority claimed from JP2295660A external-priority patent/JP2599500B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69119190D1 publication Critical patent/DE69119190D1/de
Application granted granted Critical
Publication of DE69119190T2 publication Critical patent/DE69119190T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
DE69119190T 1990-11-01 1991-11-04 Supraleitende Einrichtung mit extrem dünnen supraleitenden Kanal aus oxydischem supraleitendem Material und Methode zu deren Herstellung Expired - Fee Related DE69119190T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2295659A JP2647251B2 (ja) 1990-11-01 1990-11-01 超電導素子および作製方法
JP2295660A JP2599500B2 (ja) 1990-11-01 1990-11-01 超電導素子および作製方法

Publications (2)

Publication Number Publication Date
DE69119190D1 DE69119190D1 (de) 1996-06-05
DE69119190T2 true DE69119190T2 (de) 1996-12-19

Family

ID=26560358

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119190T Expired - Fee Related DE69119190T2 (de) 1990-11-01 1991-11-04 Supraleitende Einrichtung mit extrem dünnen supraleitenden Kanal aus oxydischem supraleitendem Material und Methode zu deren Herstellung

Country Status (4)

Country Link
US (2) US5416072A (de)
EP (1) EP0484253B1 (de)
CA (1) CA2054795C (de)
DE (1) DE69119190T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69118106T2 (de) * 1990-10-31 1996-10-31 Sumitomo Electric Industries Aus extrem dünnem supraleitendem Oxydfilm gebildete supraleitende Einrichtung mit extrem kurzem Kanal und Verfahren zu dessen Herstellung
DE69210523T2 (de) * 1991-08-28 1997-01-02 Sumitomo Electric Industries Verfahren zur Herstellung von supraleitenden Schichten aus supraleitendem Oxyd in denen nicht-supraleitende Gebiete vorkommen und Verfahren zur Herstellung eines Bauelements welches solche Schichten enthält
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
JPH0855978A (ja) * 1994-06-09 1996-02-27 Ngk Insulators Ltd 半導体装置およびその製造方法
CA2153189A1 (en) * 1994-07-04 1996-01-05 Takao Nakamura Superconducting device having a superconducting channel formed of oxide superconductor material
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
KR100233845B1 (ko) * 1996-11-04 1999-12-01 정선종 쌍결정 입계접합 초전도 전계효과 소자 및 그 제조 방법
JPH1140867A (ja) * 1997-07-22 1999-02-12 Sumitomo Electric Ind Ltd 超電導電界効果型素子およびその作製方法
US5994276A (en) * 1997-09-08 1999-11-30 Mcmaster University Composite high Tc superconductor film
US6563131B1 (en) 2000-06-02 2003-05-13 International Business Machines Corporation Method and structure of a dual/wrap-around gate field effect transistor
US7553704B2 (en) * 2005-06-28 2009-06-30 Freescale Semiconductor, Inc. Antifuse element and method of manufacture
US10224475B2 (en) 2014-06-11 2019-03-05 The Regents Of The University Of California Method for fabricating superconducting devices using a focused ion beam
US10896803B2 (en) 2016-08-19 2021-01-19 The Regents Of The University Of California Ion beam mill etch depth monitoring with nanometer-scale resolution
FR3116947B1 (fr) * 2020-11-27 2022-11-18 Commissariat Energie Atomique Dispositif quantique et son procédé de réalisation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3850580T2 (de) * 1987-01-30 1994-10-27 Hitachi Ltd Supraleiteranordnung.
US5096882A (en) * 1987-04-08 1992-03-17 Hitachi, Ltd. Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof
US5143894A (en) * 1987-10-14 1992-09-01 Mordechai Rothschild Formation and high resolution patterning of superconductors
JPH01170080A (ja) * 1987-12-25 1989-07-05 Furukawa Electric Co Ltd:The 超電導ｆｅｔ素子
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ
JP3015408B2 (ja) * 1989-05-23 2000-03-06 三洋電機株式会社 超電導トランジスタの製造方法
US5407903A (en) * 1990-09-28 1995-04-18 Sumitomo Electric Industries, Ltd. Superconducting device having a reduced thickness of oxide superconducting layer
DE69119022T2 (de) * 1990-10-08 1996-10-31 Sumitomo Electric Industries Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
EP0484253A2 (de) 1992-05-06
CA2054795A1 (en) 1992-05-02
US5416072A (en) 1995-05-16
DE69119190D1 (de) 1996-06-05
EP0484253B1 (de) 1996-05-01
CA2054795C (en) 1996-08-06
EP0484253A3 (en) 1992-08-12
US5466664A (en) 1995-11-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee