DE69127418D1 - Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial - Google Patents

Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial

Info

Publication number
DE69127418D1
DE69127418D1 DE69127418T DE69127418T DE69127418D1 DE 69127418 D1 DE69127418 D1 DE 69127418D1 DE 69127418 T DE69127418 T DE 69127418T DE 69127418 T DE69127418 T DE 69127418T DE 69127418 D1 DE69127418 D1 DE 69127418D1
Authority
DE
Germany
Prior art keywords
superconducting
manufacturing process
oxide material
extremely thin
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127418T
Other languages
English (en)
Other versions
DE69127418T2 (de
Inventor
Takao Nakamura
Hiroshi Inada
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2257859A external-priority patent/JP2647245B2/ja
Priority claimed from JP2257855A external-priority patent/JP2641971B2/ja
Priority claimed from JP2257861A external-priority patent/JP2641974B2/ja
Priority claimed from JP2257860A external-priority patent/JP2641973B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69127418D1 publication Critical patent/DE69127418D1/de
Publication of DE69127418T2 publication Critical patent/DE69127418T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE69127418T 1990-09-27 1991-09-27 Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial Expired - Fee Related DE69127418T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2257859A JP2647245B2 (ja) 1990-09-27 1990-09-27 超電導素子およびその作製方法
JP2257855A JP2641971B2 (ja) 1990-09-27 1990-09-27 超電導素子および作製方法
JP2257861A JP2641974B2 (ja) 1990-09-27 1990-09-27 超電導素子および作製方法
JP2257860A JP2641973B2 (ja) 1990-09-27 1990-09-27 超電導素子およびその作製方法

Publications (2)

Publication Number Publication Date
DE69127418D1 true DE69127418D1 (de) 1997-10-02
DE69127418T2 DE69127418T2 (de) 1998-03-12

Family

ID=27478450

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127418T Expired - Fee Related DE69127418T2 (de) 1990-09-27 1991-09-27 Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial

Country Status (4)

Country Link
US (1) US5717222A (de)
EP (1) EP0478464B1 (de)
CA (1) CA2052380C (de)
DE (1) DE69127418T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2054470C (en) * 1990-10-30 1997-07-01 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
CA2084174C (en) * 1991-11-30 1997-07-29 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing thesame
US5552374A (en) * 1992-04-09 1996-09-03 Sumitomo Electric Industries, Ltd. Oxide superconducting a transistor in crank-shaped configuration
CA2099640A1 (en) * 1992-06-24 1993-12-25 Michitomo Iiyama Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same
US5856204A (en) * 1995-09-28 1999-01-05 Matsushita Electric Industrial Co., Ltd. Tunnel-type Josephson element and method for manufacturing the same
JP3504470B2 (ja) * 1997-09-18 2004-03-08 日本放送協会 Ａｆｃ回路、キャリア再生回路および受信装置
US5990532A (en) * 1997-12-18 1999-11-23 Advanced Micro Devices Semiconductor arrangement with lightly doped regions under a gate structure
US6127251A (en) * 1998-09-08 2000-10-03 Advanced Micro Devices, Inc. Semiconductor device with a reduced width gate dielectric and method of making same
US6613463B1 (en) * 1999-09-06 2003-09-02 International Superconductivity Technology Center Superconducting laminated oxide substrate and superconducting integrated circuit
US8204564B2 (en) * 2007-11-07 2012-06-19 Brookhaven Science Associates, Llc High temperature interfacial superconductivity
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
EP4033553A1 (de) * 2021-01-26 2022-07-27 IQM Finland Oy Supraleiterübergangsbauelement und dessen herstellung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751563A (en) * 1984-11-05 1988-06-14 International Business Machines, Corp. Microminiaturized electrical interconnection device and its method of fabrication
EP0276746B1 (de) * 1987-01-30 1994-07-13 Hitachi, Ltd. Supraleiteranordnung
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
JPS63239990A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 超電導トランジスタ
EP0286106B1 (de) * 1987-04-08 1995-08-02 Hitachi, Ltd. Verfahren zur Herstellung eines supraleitenden Elements
JPS6428876A (en) * 1987-07-23 1989-01-31 Matsushita Electric Ind Co Ltd Manufacture of superconducting 3-terminal element
EP0324044B1 (de) * 1988-01-15 1992-11-25 International Business Machines Corporation Feldeffektanordnung mit supraleitendem Kanal
US4878094A (en) * 1988-03-30 1989-10-31 Minko Balkanski Self-powered electronic component and manufacturing method therefor
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ

Also Published As

Publication number Publication date
EP0478464A1 (de) 1992-04-01
CA2052380A1 (en) 1992-03-28
EP0478464B1 (de) 1997-08-27
US5717222A (en) 1998-02-10
CA2052380C (en) 1998-04-14
DE69127418T2 (de) 1998-03-12

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee