DE69127418D1 - Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial - Google Patents
Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem OxidmaterialInfo
- Publication number
- DE69127418D1 DE69127418D1 DE69127418T DE69127418T DE69127418D1 DE 69127418 D1 DE69127418 D1 DE 69127418D1 DE 69127418 T DE69127418 T DE 69127418T DE 69127418 T DE69127418 T DE 69127418T DE 69127418 D1 DE69127418 D1 DE 69127418D1
- Authority
- DE
- Germany
- Prior art keywords
- superconducting
- manufacturing process
- oxide material
- extremely thin
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures
- H10N60/207—Field effect devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2257861A JP2641974B2 (ja) | 1990-09-27 | 1990-09-27 | 超電導素子および作製方法 |
JP2257860A JP2641973B2 (ja) | 1990-09-27 | 1990-09-27 | 超電導素子およびその作製方法 |
JP2257855A JP2641971B2 (ja) | 1990-09-27 | 1990-09-27 | 超電導素子および作製方法 |
JP2257859A JP2647245B2 (ja) | 1990-09-27 | 1990-09-27 | 超電導素子およびその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127418D1 true DE69127418D1 (de) | 1997-10-02 |
DE69127418T2 DE69127418T2 (de) | 1998-03-12 |
Family
ID=27478450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127418T Expired - Fee Related DE69127418T2 (de) | 1990-09-27 | 1991-09-27 | Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial |
Country Status (4)
Country | Link |
---|---|
US (1) | US5717222A (de) |
EP (1) | EP0478464B1 (de) |
CA (1) | CA2052380C (de) |
DE (1) | DE69127418T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2054470C (en) * | 1990-10-30 | 1997-07-01 | Takao Nakamura | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby |
EP0545801B1 (de) * | 1991-11-30 | 1997-03-19 | Sumitomo Electric Industries, Ltd. | Supraleitendes Bauelement mit extrem dünnen supraleitenden Kanal und Herstellungsverfahren |
US5552374A (en) * | 1992-04-09 | 1996-09-03 | Sumitomo Electric Industries, Ltd. | Oxide superconducting a transistor in crank-shaped configuration |
CA2099640A1 (en) * | 1992-06-24 | 1993-12-25 | Michitomo Iiyama | Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same |
US5856204A (en) * | 1995-09-28 | 1999-01-05 | Matsushita Electric Industrial Co., Ltd. | Tunnel-type Josephson element and method for manufacturing the same |
JP3504470B2 (ja) * | 1997-09-18 | 2004-03-08 | 日本放送協会 | Afc回路、キャリア再生回路および受信装置 |
US5990532A (en) * | 1997-12-18 | 1999-11-23 | Advanced Micro Devices | Semiconductor arrangement with lightly doped regions under a gate structure |
US6127251A (en) * | 1998-09-08 | 2000-10-03 | Advanced Micro Devices, Inc. | Semiconductor device with a reduced width gate dielectric and method of making same |
US6613463B1 (en) * | 1999-09-06 | 2003-09-02 | International Superconductivity Technology Center | Superconducting laminated oxide substrate and superconducting integrated circuit |
US8204564B2 (en) * | 2007-11-07 | 2012-06-19 | Brookhaven Science Associates, Llc | High temperature interfacial superconductivity |
US9741918B2 (en) | 2013-10-07 | 2017-08-22 | Hypres, Inc. | Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit |
EP4033553A1 (de) * | 2021-01-26 | 2022-07-27 | IQM Finland Oy | Supraleiterübergangsbauelement und dessen herstellung |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4751563A (en) * | 1984-11-05 | 1988-06-14 | International Business Machines, Corp. | Microminiaturized electrical interconnection device and its method of fabrication |
DE3850580T2 (de) * | 1987-01-30 | 1994-10-27 | Hitachi Ltd | Supraleiteranordnung. |
KR910002311B1 (ko) * | 1987-02-27 | 1991-04-11 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 디바이스 |
JPS63239990A (ja) * | 1987-03-27 | 1988-10-05 | Toshiba Corp | 超電導トランジスタ |
US5096882A (en) * | 1987-04-08 | 1992-03-17 | Hitachi, Ltd. | Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof |
JPS6428876A (en) * | 1987-07-23 | 1989-01-31 | Matsushita Electric Ind Co Ltd | Manufacture of superconducting 3-terminal element |
DE3876228T2 (de) * | 1988-01-15 | 1993-06-03 | Ibm | Feldeffektanordnung mit supraleitendem kanal. |
US4878094A (en) * | 1988-03-30 | 1989-10-31 | Minko Balkanski | Self-powered electronic component and manufacturing method therefor |
JP2862137B2 (ja) * | 1988-08-11 | 1999-02-24 | 古河電気工業株式会社 | 超電導トランジスタ |
-
1991
- 1991-09-27 CA CA002052380A patent/CA2052380C/en not_active Expired - Fee Related
- 1991-09-27 DE DE69127418T patent/DE69127418T2/de not_active Expired - Fee Related
- 1991-09-27 EP EP91402594A patent/EP0478464B1/de not_active Expired - Lifetime
-
1996
- 1996-05-23 US US08/652,846 patent/US5717222A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0478464B1 (de) | 1997-08-27 |
DE69127418T2 (de) | 1998-03-12 |
CA2052380A1 (en) | 1992-03-28 |
EP0478464A1 (de) | 1992-04-01 |
US5717222A (en) | 1998-02-10 |
CA2052380C (en) | 1998-04-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |