FR2674374A1 - Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor. - Google Patents

Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor. Download PDF

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Publication number
FR2674374A1
FR2674374A1 FR9103529A FR9103529A FR2674374A1 FR 2674374 A1 FR2674374 A1 FR 2674374A1 FR 9103529 A FR9103529 A FR 9103529A FR 9103529 A FR9103529 A FR 9103529A FR 2674374 A1 FR2674374 A1 FR 2674374A1
Authority
FR
France
Prior art keywords
superconducting
thickness
superconducting layer
layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9103529A
Other languages
English (en)
French (fr)
Other versions
FR2674374B1 (enExample
Inventor
Bok Julien
Bernstein Pierre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SAS
Original Assignee
Bull SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SAS filed Critical Bull SAS
Priority to FR9103529A priority Critical patent/FR2674374A1/fr
Priority to ES92400697T priority patent/ES2143986T3/es
Priority to EP92400697A priority patent/EP0505259B1/fr
Priority to DE69230698T priority patent/DE69230698T2/de
Priority to JP4063741A priority patent/JP2591559B2/ja
Publication of FR2674374A1 publication Critical patent/FR2674374A1/fr
Priority to JP7251519A priority patent/JPH08191157A/ja
Application granted granted Critical
Publication of FR2674374B1 publication Critical patent/FR2674374B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
FR9103529A 1991-03-22 1991-03-22 Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor. Granted FR2674374A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9103529A FR2674374A1 (fr) 1991-03-22 1991-03-22 Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.
ES92400697T ES2143986T3 (es) 1991-03-22 1992-03-16 Transistor supraconductor con efecto de campo y procedimiento de una estructura multicapa tal como la utilizada en el transistor.
EP92400697A EP0505259B1 (fr) 1991-03-22 1992-03-16 Transistor supra-conducteur à effet de champ et procédé de fabrication d'une structure multicouche telle que celle utlisée dans le transistor
DE69230698T DE69230698T2 (de) 1991-03-22 1992-03-16 Supraleitender Feldeffekttransistor und Verfahren zur Herstellung einer Mehrfachlagenstruktur für diesen Transistor
JP4063741A JP2591559B2 (ja) 1991-03-22 1992-03-19 超電導性電界効果トランジスタ
JP7251519A JPH08191157A (ja) 1991-03-22 1995-09-28 多層構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9103529A FR2674374A1 (fr) 1991-03-22 1991-03-22 Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.

Publications (2)

Publication Number Publication Date
FR2674374A1 true FR2674374A1 (fr) 1992-09-25
FR2674374B1 FR2674374B1 (enExample) 1997-02-07

Family

ID=9411041

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9103529A Granted FR2674374A1 (fr) 1991-03-22 1991-03-22 Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.

Country Status (5)

Country Link
EP (1) EP0505259B1 (enExample)
JP (2) JP2591559B2 (enExample)
DE (1) DE69230698T2 (enExample)
ES (1) ES2143986T3 (enExample)
FR (1) FR2674374A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0533519B1 (en) * 1991-08-26 1996-04-24 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
US5399546A (en) * 1991-11-30 1995-03-21 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
EP0546959B1 (en) * 1991-12-13 1997-10-01 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
JPH0831625B2 (ja) * 1992-10-30 1996-03-27 株式会社日立製作所 超電導三端子素子
FR2835353A1 (fr) * 2002-01-25 2003-08-01 Wintici Dispositifs electroniques de commande a base de materiau supraconducteur
CN102664153B (zh) * 2012-05-08 2016-04-06 肖德元 一种超导场效应晶体管、其制作方法及应用方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160273A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 高速半導体装置
EP0324044A1 (en) * 1988-01-15 1989-07-19 International Business Machines Corporation A field-effect device with a superconducting channel

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0260176A (ja) * 1988-08-26 1990-02-28 Japan Aviation Electron Ind Ltd アハロノフ・ボーム効果トランジスタ
EP0494580B1 (en) * 1991-01-07 2002-04-03 International Business Machines Corporation Superconducting field-effect transistor with inverted MISFET structure and method for making the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160273A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 高速半導体装置
EP0324044A1 (en) * 1988-01-15 1989-07-19 International Business Machines Corporation A field-effect device with a superconducting channel

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS vol. 55, no. 19, 6 Novembre 1989, NEW YORK, US pages 2032 - 2034; C.T. ROGERS ET AL.: 'Fabrication of heteroepitaxial YBa2Cu3O7-x-PrBa2Cu3O7-x-YBA2Cu3O7-x Josephson devices grown by laser deposition' *
APPLIED PHYSICS LETTERS vol. 58, no. 3, 21 Janvier 1991, NEW YORK, US pages 298 - 300; H. OBARA ET AL.: 'Preparation of PrBa2Cu3Oy and PrBa2Cu3Oy/YBa2Cu3Oy epitaxial films using molecular beam epitaxy' *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 423 (E-680)9 Novembre 1988 & JP-A-63 160 273 ( FUJITSU LTD ) 4 Juillet 1988 *
PHYSICAL REVIEW LETTERS vol. 64, no. 7, 12 Février 1990, NEW YORK, US pages 804 - 807; J.-M. TRISCONE ET AL.: 'YBa2Cu3O7/PrBa2Cu3O7 Superlattices: Properties of ultrathin superconducting layers separated by insulating layers' *
WORKSHOP ON HIGH TEMPERATURE SUPERCONDUCTING ELECTRON DEVICES 7 Juin 1989, SHIKABLE, JP pages 281 - 284; D.F. MOORE ET AL.: 'Superconducting thin films for device applications' *

Also Published As

Publication number Publication date
JP2591559B2 (ja) 1997-03-19
DE69230698D1 (de) 2000-03-30
JPH06237023A (ja) 1994-08-23
EP0505259A2 (fr) 1992-09-23
DE69230698T2 (de) 2000-06-15
FR2674374B1 (enExample) 1997-02-07
EP0505259A3 (en) 1993-01-27
EP0505259B1 (fr) 2000-02-23
ES2143986T3 (es) 2000-06-01
JPH08191157A (ja) 1996-07-23

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