ES2143986T3 - Transistor supraconductor con efecto de campo y procedimiento de una estructura multicapa tal como la utilizada en el transistor. - Google Patents

Transistor supraconductor con efecto de campo y procedimiento de una estructura multicapa tal como la utilizada en el transistor.

Info

Publication number
ES2143986T3
ES2143986T3 ES92400697T ES92400697T ES2143986T3 ES 2143986 T3 ES2143986 T3 ES 2143986T3 ES 92400697 T ES92400697 T ES 92400697T ES 92400697 T ES92400697 T ES 92400697T ES 2143986 T3 ES2143986 T3 ES 2143986T3
Authority
ES
Spain
Prior art keywords
transistor
supraconductor
procedure
field effect
multilayer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92400697T
Other languages
English (en)
Spanish (es)
Inventor
Pierre Bernstein
Julien Bok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SAS
Original Assignee
Bull SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SAS filed Critical Bull SAS
Application granted granted Critical
Publication of ES2143986T3 publication Critical patent/ES2143986T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
ES92400697T 1991-03-22 1992-03-16 Transistor supraconductor con efecto de campo y procedimiento de una estructura multicapa tal como la utilizada en el transistor. Expired - Lifetime ES2143986T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9103529A FR2674374A1 (fr) 1991-03-22 1991-03-22 Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.

Publications (1)

Publication Number Publication Date
ES2143986T3 true ES2143986T3 (es) 2000-06-01

Family

ID=9411041

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92400697T Expired - Lifetime ES2143986T3 (es) 1991-03-22 1992-03-16 Transistor supraconductor con efecto de campo y procedimiento de una estructura multicapa tal como la utilizada en el transistor.

Country Status (5)

Country Link
EP (1) EP0505259B1 (enExample)
JP (2) JP2591559B2 (enExample)
DE (1) DE69230698T2 (enExample)
ES (1) ES2143986T3 (enExample)
FR (1) FR2674374A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0533519B1 (en) * 1991-08-26 1996-04-24 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
US5399546A (en) * 1991-11-30 1995-03-21 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
EP0546959B1 (en) * 1991-12-13 1997-10-01 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
JPH0831625B2 (ja) * 1992-10-30 1996-03-27 株式会社日立製作所 超電導三端子素子
FR2835353A1 (fr) * 2002-01-25 2003-08-01 Wintici Dispositifs electroniques de commande a base de materiau supraconducteur
CN102664153B (zh) * 2012-05-08 2016-04-06 肖德元 一种超导场效应晶体管、其制作方法及应用方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160273A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 高速半導体装置
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.
JPH0260176A (ja) * 1988-08-26 1990-02-28 Japan Aviation Electron Ind Ltd アハロノフ・ボーム効果トランジスタ
EP0494580B1 (en) * 1991-01-07 2002-04-03 International Business Machines Corporation Superconducting field-effect transistor with inverted MISFET structure and method for making the same

Also Published As

Publication number Publication date
JP2591559B2 (ja) 1997-03-19
DE69230698D1 (de) 2000-03-30
JPH06237023A (ja) 1994-08-23
EP0505259A2 (fr) 1992-09-23
FR2674374A1 (fr) 1992-09-25
DE69230698T2 (de) 2000-06-15
FR2674374B1 (enExample) 1997-02-07
EP0505259A3 (en) 1993-01-27
EP0505259B1 (fr) 2000-02-23
JPH08191157A (ja) 1996-07-23

Similar Documents

Publication Publication Date Title
MX2022006367A (es) Dispositivos fotovoltáicos en tándem de perovskita 2d.
DE69432456D1 (de) Elektronen emittierende Einrichtungen
KR930011158A (ko) 박막 트랜지스터 디바이스
JPS5366181A (en) High dielectric strength mis type transistor
ES2143986T3 (es) Transistor supraconductor con efecto de campo y procedimiento de una estructura multicapa tal como la utilizada en el transistor.
ES8605126A1 (es) Perfeccionamientos en los sistemas supresores de sobretensiones y metodo de fabricacion correspondiente
ES2109222T3 (es) Circuito integrado cmos que tiene aislamiento mejorado.
JPS56162875A (en) Semiconductor device
MY191544A (en) Multi-conductor interconnect structure for a microelectronic device
JPS5382179A (en) Field effect transistor
JPS56116669A (en) Field effect transistor
JPS5349970A (en) Semiconductor device
SE8005703L (sv) Dielektriskt isolerad halvledaromkopplare
JPS5771179A (en) Input protective circuit device
JPS57113262A (en) Voltage dividing system for semiconductor integrated circuit
JPS5370769A (en) Production of semiconductor device
KR900005561A (ko) 반도체장치
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS53132276A (en) Insulation gate type field effect semiconductor device
JPS5413273A (en) Semiconductor device
JPS52113173A (en) Mos type semiconductor device
JPS55108773A (en) Insulating gate type field effect transistor
KR900013649A (ko) 부극성 고내압 차단용 피모스 트랜지스터
KR930014902A (ko) Ito 막의 형성방법
JPS53134371A (en) Manufacture for field effect type semiconductor device

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 505259

Country of ref document: ES