JPS53134371A - Manufacture for field effect type semiconductor device - Google Patents

Manufacture for field effect type semiconductor device

Info

Publication number
JPS53134371A
JPS53134371A JP4958977A JP4958977A JPS53134371A JP S53134371 A JPS53134371 A JP S53134371A JP 4958977 A JP4958977 A JP 4958977A JP 4958977 A JP4958977 A JP 4958977A JP S53134371 A JPS53134371 A JP S53134371A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
field effect
effect type
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4958977A
Other languages
Japanese (ja)
Other versions
JPS6026304B2 (en
Inventor
Toshio Usui
Kiyobumi Oota
Yutaka Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4958977A priority Critical patent/JPS6026304B2/en
Publication of JPS53134371A publication Critical patent/JPS53134371A/en
Publication of JPS6026304B2 publication Critical patent/JPS6026304B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To easily manufacture a field effect type semiconductor device having excellent high frequency performance through the protection of the exposed active region surface, by covering the exposed active region surface between a source electrode and a drain electrode with an insulating film.
COPYRIGHT: (C)1978,JPO&Japio
JP4958977A 1977-04-28 1977-04-28 Method for manufacturing field effect semiconductor device Expired JPS6026304B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4958977A JPS6026304B2 (en) 1977-04-28 1977-04-28 Method for manufacturing field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4958977A JPS6026304B2 (en) 1977-04-28 1977-04-28 Method for manufacturing field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS53134371A true JPS53134371A (en) 1978-11-22
JPS6026304B2 JPS6026304B2 (en) 1985-06-22

Family

ID=12835405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4958977A Expired JPS6026304B2 (en) 1977-04-28 1977-04-28 Method for manufacturing field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS6026304B2 (en)

Also Published As

Publication number Publication date
JPS6026304B2 (en) 1985-06-22

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