DE69223707D1 - Halbleiter-Elektronenemittierende Einrichtung - Google Patents

Halbleiter-Elektronenemittierende Einrichtung

Info

Publication number
DE69223707D1
DE69223707D1 DE69223707T DE69223707T DE69223707D1 DE 69223707 D1 DE69223707 D1 DE 69223707D1 DE 69223707 T DE69223707 T DE 69223707T DE 69223707 T DE69223707 T DE 69223707T DE 69223707 D1 DE69223707 D1 DE 69223707D1
Authority
DE
Germany
Prior art keywords
emitting device
electron emitting
semiconductor electron
semiconductor
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223707T
Other languages
English (en)
Other versions
DE69223707T2 (de
Inventor
Nobuo Watanabe
Norio Kaneko
Masahiko Okunuki
Takeo Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23445591A external-priority patent/JPH0574329A/ja
Priority claimed from JP23469291A external-priority patent/JPH0574332A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69223707D1 publication Critical patent/DE69223707D1/de
Application granted granted Critical
Publication of DE69223707T2 publication Critical patent/DE69223707T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69223707T 1991-09-13 1992-09-11 Halbleiter-Elektronenemittierende Einrichtung Expired - Fee Related DE69223707T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23445591A JPH0574329A (ja) 1991-09-13 1991-09-13 半導体電子放出素子
JP23469291A JPH0574332A (ja) 1991-09-13 1991-09-13 半導体電子放出素子

Publications (2)

Publication Number Publication Date
DE69223707D1 true DE69223707D1 (de) 1998-02-05
DE69223707T2 DE69223707T2 (de) 1998-05-20

Family

ID=26531579

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223707T Expired - Fee Related DE69223707T2 (de) 1991-09-13 1992-09-11 Halbleiter-Elektronenemittierende Einrichtung

Country Status (3)

Country Link
US (1) US5760417A (de)
EP (1) EP0532019B1 (de)
DE (1) DE69223707T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9616265D0 (en) * 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
GB9702348D0 (en) * 1997-02-05 1997-03-26 Smiths Industries Plc Electron emitter devices
US6366266B1 (en) 1999-09-02 2002-04-02 Micron Technology, Inc. Method and apparatus for programmable field emission display
US6781146B2 (en) 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6753544B2 (en) 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6558968B1 (en) 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6703252B2 (en) * 2002-01-31 2004-03-09 Hewlett-Packard Development Company, L.P. Method of manufacturing an emitter
US6835947B2 (en) * 2002-01-31 2004-12-28 Hewlett-Packard Development Company, L.P. Emitter and method of making
US6852554B2 (en) * 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
US6787792B2 (en) * 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US7170223B2 (en) 2002-07-17 2007-01-30 Hewlett-Packard Development Company, L.P. Emitter with dielectric layer having implanted conducting centers
US6841794B2 (en) * 2003-02-18 2005-01-11 Hewlett-Packard Development Company, L.P. Dielectric emitter with PN junction
US7928561B2 (en) * 2005-09-09 2011-04-19 General Electric Company Device for thermal transfer and power generation
CN101933169B (zh) * 2008-02-01 2012-07-11 Insiava(控股)有限公司 包括异质结的半导体发光器件
KR20110042188A (ko) * 2008-10-24 2011-04-25 가부시키가이샤 어드밴티스트 전자 디바이스 및 제조 방법
CN112038455B (zh) * 2020-08-27 2021-12-31 厦门士兰明镓化合物半导体有限公司 紫外发光二极管及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4994708A (en) * 1986-07-01 1991-02-19 Canon Kabushiki Kaisha Cold cathode device
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置
US5107311A (en) * 1989-08-02 1992-04-21 Canon Kabushiki Kaisha Semiconductor light-emitting device
DE69033677T2 (de) * 1989-09-04 2001-05-23 Canon Kk Elektronenemissionselement- und Herstellungsverfahren desselben
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子

Also Published As

Publication number Publication date
DE69223707T2 (de) 1998-05-20
EP0532019A1 (de) 1993-03-17
EP0532019B1 (de) 1997-12-29
US5760417A (en) 1998-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee