DE69214850D1 - Redundantes Speichergerät mit wahlfreiem Zugriff das mit einem Kodierer zwischen Programmierschaltungen und Redundanzwortleitungtreiberschaltungen ausgerüstet ist - Google Patents

Redundantes Speichergerät mit wahlfreiem Zugriff das mit einem Kodierer zwischen Programmierschaltungen und Redundanzwortleitungtreiberschaltungen ausgerüstet ist

Info

Publication number
DE69214850D1
DE69214850D1 DE69214850T DE69214850T DE69214850D1 DE 69214850 D1 DE69214850 D1 DE 69214850D1 DE 69214850 T DE69214850 T DE 69214850T DE 69214850 T DE69214850 T DE 69214850T DE 69214850 D1 DE69214850 D1 DE 69214850D1
Authority
DE
Germany
Prior art keywords
circuits
encoder
memory device
random access
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69214850T
Other languages
English (en)
Other versions
DE69214850T2 (de
Inventor
Hiroshi Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69214850D1 publication Critical patent/DE69214850D1/de
Publication of DE69214850T2 publication Critical patent/DE69214850T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/802—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by encoding redundancy signals
DE69214850T 1991-01-25 1992-01-16 Redundantes Speichergerät mit wahlfreiem Zugriff das mit einem Kodierer zwischen Programmierschaltungen und Redundanzwortleitungtreiberschaltungen ausgerüstet ist Expired - Fee Related DE69214850T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3025504A JP2629463B2 (ja) 1991-01-25 1991-01-25 半導体記憶回路

Publications (2)

Publication Number Publication Date
DE69214850D1 true DE69214850D1 (de) 1996-12-05
DE69214850T2 DE69214850T2 (de) 1997-05-28

Family

ID=12167900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69214850T Expired - Fee Related DE69214850T2 (de) 1991-01-25 1992-01-16 Redundantes Speichergerät mit wahlfreiem Zugriff das mit einem Kodierer zwischen Programmierschaltungen und Redundanzwortleitungtreiberschaltungen ausgerüstet ist

Country Status (5)

Country Link
US (1) US5224073A (de)
EP (1) EP0496282B1 (de)
JP (1) JP2629463B2 (de)
KR (1) KR960000679B1 (de)
DE (1) DE69214850T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3040625B2 (ja) * 1992-02-07 2000-05-15 松下電器産業株式会社 半導体記憶装置
JP2567180B2 (ja) * 1992-03-23 1996-12-25 株式会社東芝 半導体メモリ
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
DE19754471C1 (de) * 1997-11-26 1998-11-19 Siemens Ag Verfahren zum Herstellen eines langgestreckten Supraleiters
KR19990061991A (ko) * 1997-12-31 1999-07-26 김영환 다수개의 리던던시 입출력 라인들을 구비하는 반도체 장치
US5970013A (en) * 1998-02-26 1999-10-19 Lucent Technologies Inc. Adaptive addressable circuit redundancy method and apparatus with broadcast write
US6011733A (en) * 1998-02-26 2000-01-04 Lucent Technologies Inc. Adaptive addressable circuit redundancy method and apparatus
JPH11273395A (ja) * 1998-03-25 1999-10-08 Nec Corp 半導体記憶装置
JP3638214B2 (ja) * 1998-07-30 2005-04-13 株式会社 沖マイクロデザイン 冗長回路
DE19922920C1 (de) * 1999-05-19 2000-11-16 Siemens Ag Integrierter Speicher mit Redundanzfunktion
US6438672B1 (en) 1999-06-03 2002-08-20 Agere Systems Guardian Corp. Memory aliasing method and apparatus
JP2003036681A (ja) * 2001-07-23 2003-02-07 Hitachi Ltd 不揮発性記憶装置
US20060182187A1 (en) * 2005-02-11 2006-08-17 Likovich Robert B Jr Automatic reconfiguration of an I/O bus to correct for an error bit
US7495977B1 (en) * 2006-03-31 2009-02-24 Cypress Semiconductor Corp. Memory system having high-speed row block and column redundancy
KR20170055222A (ko) 2015-11-11 2017-05-19 삼성전자주식회사 리페어 단위 변경 기능을 가지는 메모리 장치 및 메모리 시스템

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837747A (en) * 1986-11-29 1989-06-06 Mitsubishi Denki Kabushiki Kaisha Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
JP2622254B2 (ja) * 1987-02-24 1997-06-18 沖電気工業株式会社 半導体記憶装置
JP2632076B2 (ja) * 1990-08-02 1997-07-16 三菱電機株式会社 半導体記憶装置

Also Published As

Publication number Publication date
US5224073A (en) 1993-06-29
KR960000679B1 (ko) 1996-01-11
DE69214850T2 (de) 1997-05-28
KR920015384A (ko) 1992-08-26
EP0496282B1 (de) 1996-10-30
JPH04252500A (ja) 1992-09-08
JP2629463B2 (ja) 1997-07-09
EP0496282A3 (en) 1993-05-12
EP0496282A2 (de) 1992-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee