DE69211821T2 - Innere Leiterstruktur einer Halbleiteranordnung - Google Patents

Innere Leiterstruktur einer Halbleiteranordnung

Info

Publication number
DE69211821T2
DE69211821T2 DE69211821T DE69211821T DE69211821T2 DE 69211821 T2 DE69211821 T2 DE 69211821T2 DE 69211821 T DE69211821 T DE 69211821T DE 69211821 T DE69211821 T DE 69211821T DE 69211821 T2 DE69211821 T2 DE 69211821T2
Authority
DE
Germany
Prior art keywords
semiconductor device
inner conductor
conductor structure
semiconductor
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69211821T
Other languages
English (en)
Other versions
DE69211821D1 (de
Inventor
Kiyoshi Iida
Hisashi Fujitaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69211821D1 publication Critical patent/DE69211821D1/de
Publication of DE69211821T2 publication Critical patent/DE69211821T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE69211821T 1991-12-10 1992-11-27 Innere Leiterstruktur einer Halbleiteranordnung Expired - Fee Related DE69211821T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3324876A JP2882143B2 (ja) 1991-12-10 1991-12-10 半導体装置の内部配線構造

Publications (2)

Publication Number Publication Date
DE69211821D1 DE69211821D1 (de) 1996-08-01
DE69211821T2 true DE69211821T2 (de) 1996-12-05

Family

ID=18170624

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69211821T Expired - Fee Related DE69211821T2 (de) 1991-12-10 1992-11-27 Innere Leiterstruktur einer Halbleiteranordnung

Country Status (4)

Country Link
US (1) US5410450A (de)
EP (1) EP0546731B1 (de)
JP (1) JP2882143B2 (de)
DE (1) DE69211821T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008060300B4 (de) 2007-12-04 2020-06-18 Fuji Electric Co., Ltd. Halbleitervorrichtung

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US5956231A (en) * 1994-10-07 1999-09-21 Hitachi, Ltd. Semiconductor device having power semiconductor elements
JPH08162569A (ja) * 1994-12-08 1996-06-21 Fuji Electric Co Ltd 半導体装置
DE19522172C1 (de) * 1995-06-19 1996-11-21 Siemens Ag Leistungs-Halbleitermodul mit Anschlußstiften
JP3013794B2 (ja) * 1996-12-10 2000-02-28 富士電機株式会社 半導体装置
JP3985016B2 (ja) * 1997-10-31 2007-10-03 沖電気工業株式会社 半導体装置
GB9911905D0 (en) * 1999-05-22 1999-07-21 Trw Lucas Varity Electric Improvement relating to electrical power assisted steering
DE10004059A1 (de) * 2000-02-01 2001-11-08 Buhler Motor Gmbh Mehrphasen-Motor
DE10010919A1 (de) * 2000-03-06 2001-09-20 Grundfos As Frequenzumrichter
DE10352671A1 (de) 2003-11-11 2005-06-23 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Leistungsmodul
JP4365388B2 (ja) * 2006-06-16 2009-11-18 株式会社日立製作所 半導体パワーモジュールおよびその製法
JP5041798B2 (ja) 2006-12-15 2012-10-03 三菱電機株式会社 半導体装置
DE102007016222B3 (de) * 2007-04-04 2008-11-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung sowie Verfahren zur Herstellung desselben
JP5198173B2 (ja) * 2008-07-28 2013-05-15 株式会社ケーヒン バスバーを備える端子の実装構造
US20100263900A1 (en) * 2009-04-20 2010-10-21 Divincenzo Gregory Reconfigurable full authority digital electronic control housing
KR101129733B1 (ko) 2010-08-20 2012-03-23 주식회사 케이이씨 전력용 반도체 디바이스
JP5533983B2 (ja) * 2012-11-12 2014-06-25 富士電機株式会社 半導体装置
DE112013006852B4 (de) * 2013-03-21 2023-06-29 Mitsubishi Electric Corporation Halbleitervorrichtung
JP6040312B2 (ja) * 2013-07-10 2016-12-07 日立オートモティブシステムズ株式会社 電力用半導体モジュール
USD754084S1 (en) 2013-08-21 2016-04-19 Mitsubishi Electric Corporation Semiconductor device
JP6338937B2 (ja) * 2014-06-13 2018-06-06 ローム株式会社 パワーモジュールおよびその製造方法
CN106415933A (zh) 2014-06-16 2017-02-15 三菱电机株式会社 端子连接结构
USD762597S1 (en) 2014-08-07 2016-08-02 Infineon Technologies Ag Power semiconductor module
EP3203515B1 (de) 2014-09-30 2022-11-09 Sansha Electric Manufacturing Co., Ltd. Halbleitermodul mit gehäuse für verbesserte sichtprüfung
WO2016059916A1 (ja) 2014-10-14 2016-04-21 富士電機株式会社 半導体装置
JP1529977S (de) * 2014-11-04 2015-07-27
DE102014116662B4 (de) 2014-11-14 2018-03-08 Infineon Technologies Ag Elektrische anschlussbaugruppe, halbleitermodul und verfahren zurherstellung eines halbleitermoduls
USD748595S1 (en) * 2015-02-03 2016-02-02 Infineon Technologies Ag Power semiconductor module
USD755742S1 (en) * 2015-02-18 2016-05-10 Semiconductor Components Industries, Llc Power device package
USD755741S1 (en) * 2015-02-18 2016-05-10 Semiconductor Components Industries, Llc Power device package
JP6439552B2 (ja) * 2015-04-01 2018-12-19 富士電機株式会社 半導体モジュール及び半導体装置
USD759604S1 (en) * 2015-06-17 2016-06-21 Mitsubishi Electric Corporation Semiconductor device
DE102016217007A1 (de) * 2016-09-07 2018-03-08 Siemens Aktiengesellschaft Leistungsmodul
JP1578687S (de) * 2016-11-08 2017-06-12
JP6884624B2 (ja) * 2017-04-05 2021-06-09 富士電機株式会社 半導体装置、半導体装置の製造方法及びインターフェースユニット
USD917402S1 (en) * 2017-08-22 2021-04-27 Foxconn Interconnect Technology Limited Protective cap
USD877102S1 (en) * 2017-12-28 2020-03-03 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module
USD906271S1 (en) 2018-04-13 2020-12-29 Rohm Co., Ltd. Semiconductor module

Family Cites Families (7)

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US4819042A (en) * 1983-10-31 1989-04-04 Kaufman Lance R Isolated package for multiple semiconductor power components
JPS60239051A (ja) * 1984-05-11 1985-11-27 Mitsubishi Electric Corp 半導体装置
DE3717489A1 (de) * 1987-05-23 1988-12-01 Asea Brown Boveri Leistungshalbleitermodul und verfahren zur herstellung des moduls
DE3937045A1 (de) * 1989-11-07 1991-05-08 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
DE4031051C2 (de) * 1989-11-14 1997-05-07 Siemens Ag Modul mit mindestens einem Halbleiterschaltelement und einer Ansteuerschaltung
JPH03190190A (ja) * 1989-12-19 1991-08-20 Toshiba Corp 混成集積回路装置
JPH03263363A (ja) * 1990-02-23 1991-11-22 Fuji Electric Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008060300B4 (de) 2007-12-04 2020-06-18 Fuji Electric Co., Ltd. Halbleitervorrichtung

Also Published As

Publication number Publication date
JPH05160339A (ja) 1993-06-25
EP0546731A1 (de) 1993-06-16
US5410450A (en) 1995-04-25
EP0546731B1 (de) 1996-06-26
JP2882143B2 (ja) 1999-04-12
DE69211821D1 (de) 1996-08-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee