DE69209369T2 - Halbleitereinheit und Methode zu ihrer Herstellung - Google Patents

Halbleitereinheit und Methode zu ihrer Herstellung

Info

Publication number
DE69209369T2
DE69209369T2 DE1992609369 DE69209369T DE69209369T2 DE 69209369 T2 DE69209369 T2 DE 69209369T2 DE 1992609369 DE1992609369 DE 1992609369 DE 69209369 T DE69209369 T DE 69209369T DE 69209369 T2 DE69209369 T2 DE 69209369T2
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1992609369
Other languages
English (en)
Other versions
DE69209369D1 (de
Inventor
Kazuhiko Niwayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69209369D1 publication Critical patent/DE69209369D1/de
Publication of DE69209369T2 publication Critical patent/DE69209369T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
DE1992609369 1991-05-30 1992-05-28 Halbleitereinheit und Methode zu ihrer Herstellung Expired - Fee Related DE69209369T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3127370A JPH04352457A (ja) 1991-05-30 1991-05-30 圧接型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69209369D1 DE69209369D1 (de) 1996-05-02
DE69209369T2 true DE69209369T2 (de) 1996-08-14

Family

ID=14958296

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992609369 Expired - Fee Related DE69209369T2 (de) 1991-05-30 1992-05-28 Halbleitereinheit und Methode zu ihrer Herstellung

Country Status (4)

Country Link
US (2) US5278434A (de)
EP (1) EP0516416B1 (de)
JP (1) JPH04352457A (de)
DE (1) DE69209369T2 (de)

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US5543662A (en) * 1994-09-20 1996-08-06 Sun Microsystems, Inc. Low heat loss and secure chip carrier for cryogenic cooling
JP3291977B2 (ja) * 1995-05-31 2002-06-17 三菱電機株式会社 圧接型半導体素子及びその製造方法並びに圧接型半導体装置
US5674785A (en) * 1995-11-27 1997-10-07 Micron Technology, Inc. Method of producing a single piece package for semiconductor die
US6861290B1 (en) * 1995-12-19 2005-03-01 Micron Technology, Inc. Flip-chip adaptor package for bare die
JP3550243B2 (ja) * 1996-01-30 2004-08-04 株式会社東芝 内部圧接型半導体装置
DE19711965C2 (de) * 1997-03-21 1999-01-14 Siemens Ag Vorrichtung zur niederinduktiven Anbindung eines abschaltbaren Thyristors an seine Ansteuereinrichtung
DE19739083C2 (de) 1997-09-06 2001-09-27 Bosch Gmbh Robert Gehäuse mit einem planaren Leistungstransistor
USRE43112E1 (en) 1998-05-04 2012-01-17 Round Rock Research, Llc Stackable ball grid array package
JP4129082B2 (ja) * 1998-07-30 2008-07-30 三菱電機株式会社 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置
EP1030355B1 (de) * 1998-09-10 2007-12-19 Mitsubishi Denki Kabushiki Kaisha Druckkontakt-halbleiteranordnung
DE69841124D1 (de) * 1998-11-11 2009-10-15 Mitsubishi Electric Corp Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat
EP1065730B1 (de) * 1999-01-18 2006-11-29 Mitsubishi Denki Kabushiki Kaisha Unter druck kontaktiertes halbleiterbauelement
US6081427A (en) * 1999-09-30 2000-06-27 Rockwell Technologies, Llc Retainer for press-pack semi-conductor device
US6445013B1 (en) * 2000-04-13 2002-09-03 Mitsubishi Denki Kabushiki Kaisha Gate commutated turn-off semiconductor device
US6532154B2 (en) 2001-01-09 2003-03-11 Rockwell Automation Technologies, Inc. Stack assembly housing
JP4127763B2 (ja) * 2002-01-22 2008-07-30 株式会社東芝 半導体装置
US6781227B2 (en) * 2002-01-25 2004-08-24 International Rectifier Corporation Compression assembled electronic package having a plastic molded insulation ring
JP2004023083A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 圧接型半導体装置
DE10306767A1 (de) * 2003-02-18 2004-08-26 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleitermodul
DE102005054543A1 (de) * 2005-11-14 2007-05-31 Peter Köllensperger Halbleiterschalter mit integrierter Ansteuerschaltung
JP5040234B2 (ja) * 2006-09-26 2012-10-03 三菱電機株式会社 圧接型半導体装置
US20080315383A1 (en) * 2007-06-25 2008-12-25 Tong Hsing Electric Industries Ltd. Chip frame for optical digital processor
US9728868B1 (en) 2010-05-05 2017-08-08 Cree Fayetteville, Inc. Apparatus having self healing liquid phase power connects and method thereof
WO2013038493A1 (ja) * 2011-09-13 2013-03-21 トヨタ自動車株式会社 半導体モジュール
US9142692B2 (en) * 2012-07-23 2015-09-22 Bae Systems Information And Electronic Systems Integration Inc. Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods
US9177943B2 (en) 2013-10-15 2015-11-03 Ixys Corporation Power device cassette with auxiliary emitter contact
JP2015138835A (ja) * 2014-01-21 2015-07-30 株式会社東芝 半導体装置
CN105336723B (zh) 2014-07-28 2018-09-14 通用电气公司 半导体模块、半导体模块组件及半导体装置
JP2016062983A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置
DE202014104564U1 (de) * 2014-09-24 2014-11-20 Sma Solar Technology Ag Kurzschlussschalter mit Halbleiterschalter und Anordnung zum Kurzschließen einer dreiphasigen Wechselspannung
JP6359573B2 (ja) * 2016-01-19 2018-07-18 株式会社東芝 半導体装置
US10319545B2 (en) 2016-11-30 2019-06-11 Iskra Za{hacek over (s)}{hacek over (c)}ite d.o.o. Surge protective device modules and DIN rail device systems including same
US10447026B2 (en) 2016-12-23 2019-10-15 Ripd Ip Development Ltd Devices for active overvoltage protection
US10707678B2 (en) 2016-12-23 2020-07-07 Ripd Research And Ip Development Ltd. Overvoltage protection device including multiple varistor wafers
WO2018134204A1 (en) * 2017-01-17 2018-07-26 Abb Schweiz Ag Semiconductor switching device
US10340110B2 (en) 2017-05-12 2019-07-02 Raycap IP Development Ltd Surge protective device modules including integral thermal disconnect mechanisms and methods including same
US10685767B2 (en) 2017-09-14 2020-06-16 Raycap IP Development Ltd Surge protective device modules and systems including same
US11223200B2 (en) 2018-07-26 2022-01-11 Ripd Ip Development Ltd Surge protective devices, circuits, modules and systems including same
US11488927B2 (en) 2021-02-18 2022-11-01 Abb Schweiz Ag Press-pack semiconductor fixtures
US11862967B2 (en) 2021-09-13 2024-01-02 Raycap, S.A. Surge protective device assembly modules
US11723145B2 (en) 2021-09-20 2023-08-08 Raycap IP Development Ltd PCB-mountable surge protective device modules and SPD circuit systems and methods including same
US11990745B2 (en) 2022-01-12 2024-05-21 Raycap IP Development Ltd Methods and systems for remote monitoring of surge protective devices

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US3581160A (en) * 1968-12-23 1971-05-25 Gen Electric Semiconductor rectifier assembly having high explosion rating
JPS553647A (en) * 1978-06-22 1980-01-11 Toshiba Corp Pressure contact type semiconductor device
JPS57100743A (en) * 1980-12-16 1982-06-23 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS57149743A (en) * 1981-03-11 1982-09-16 Hitachi Ltd Semiconductor device having pressure welding structure
EP0138048B1 (de) * 1983-09-29 1993-12-15 Kabushiki Kaisha Toshiba Halbleiteranordnung in Druckpackung
JPS60194565A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置
JPS6210927A (ja) * 1985-07-08 1987-01-19 Yaesu Musen Co Ltd Ｐｌｌ発振回路
JPS62177933A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd 半導体装置
JPH0691117B2 (ja) * 1986-03-18 1994-11-14 株式会社日立製作所 圧接型半導体装置
GB2208962B (en) * 1987-08-19 1991-05-08 Plessey Co Plc Power supply
JPH02220452A (ja) * 1989-02-21 1990-09-03 Mitsubishi Electric Corp 半導体装置
JPH0760893B2 (ja) * 1989-11-06 1995-06-28 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US5346859A (en) 1994-09-13
US5278434A (en) 1994-01-11
JPH04352457A (ja) 1992-12-07
EP0516416A1 (de) 1992-12-02
DE69209369D1 (de) 1996-05-02
EP0516416B1 (de) 1996-03-27

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee