DE69226291D1 - Feldeffekt-Halbleitervorrichtung und Methode zu deren Herstellung - Google Patents

Feldeffekt-Halbleitervorrichtung und Methode zu deren Herstellung

Info

Publication number
DE69226291D1
DE69226291D1 DE69226291T DE69226291T DE69226291D1 DE 69226291 D1 DE69226291 D1 DE 69226291D1 DE 69226291 T DE69226291 T DE 69226291T DE 69226291 T DE69226291 T DE 69226291T DE 69226291 D1 DE69226291 D1 DE 69226291D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
same
field effect
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69226291T
Other languages
English (en)
Other versions
DE69226291T2 (de
Inventor
Yasuhisa Omura
Katsutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69226291D1 publication Critical patent/DE69226291D1/de
Publication of DE69226291T2 publication Critical patent/DE69226291T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE1992626291 1991-01-14 1992-01-11 Feldeffekt-Halbleitervorrichtung und Methode zu deren Herstellung Expired - Lifetime DE69226291T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1609391A JPH04241465A (ja) 1991-01-14 1991-01-14 電界効果型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69226291D1 true DE69226291D1 (de) 1998-08-27
DE69226291T2 DE69226291T2 (de) 1999-04-29

Family

ID=11906904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992626291 Expired - Lifetime DE69226291T2 (de) 1991-01-14 1992-01-11 Feldeffekt-Halbleitervorrichtung und Methode zu deren Herstellung

Country Status (4)

Country Link
EP (1) EP0495562B1 (de)
JP (2) JPH04241465A (de)
KR (1) KR950001156B1 (de)
DE (1) DE69226291T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04241465A (ja) * 1991-01-14 1992-08-28 Nippon Telegr & Teleph Corp <Ntt> 電界効果型半導体装置の製造方法
JP3078720B2 (ja) 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752167A (en) * 1980-09-16 1982-03-27 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor and manufacture thereof
JPS5830123A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 半導体装置の製造方法
JPS61166074A (ja) * 1985-01-17 1986-07-26 Fujitsu Ltd 絶縁ゲ−ト型トランジスタ及びその製造方法
JPS6427272A (en) * 1987-07-23 1989-01-30 Agency Ind Science Techn Semiconductor device
JPH02291175A (ja) * 1989-04-29 1990-11-30 Fujitsu Ltd 絶縁ゲート型電界効果トランジスタ
JPH04241465A (ja) * 1991-01-14 1992-08-28 Nippon Telegr & Teleph Corp <Ntt> 電界効果型半導体装置の製造方法

Also Published As

Publication number Publication date
EP0495562A2 (de) 1992-07-22
DE69226291T2 (de) 1999-04-29
EP0495562A3 (en) 1993-05-12
JP2663371B2 (ja) 1997-10-15
JPH04241465A (ja) 1992-08-28
EP0495562B1 (de) 1998-07-22
KR950001156B1 (en) 1995-02-11
JPH0645609A (ja) 1994-02-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition