DE69200147D1 - Doppelkanal-Halbleiterlaser und sein Herstellungsverfahren. - Google Patents

Doppelkanal-Halbleiterlaser und sein Herstellungsverfahren.

Info

Publication number
DE69200147D1
DE69200147D1 DE69200147T DE69200147T DE69200147D1 DE 69200147 D1 DE69200147 D1 DE 69200147D1 DE 69200147 T DE69200147 T DE 69200147T DE 69200147 T DE69200147 T DE 69200147T DE 69200147 D1 DE69200147 D1 DE 69200147D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
dual channel
channel semiconductor
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69200147T
Other languages
English (en)
Other versions
DE69200147T2 (de
Inventor
Francois Brillouet
Patrick Garabedian
Leon Goldstein
Philippe Pagnod-Rossiaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Alcatel CIT SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA filed Critical Alcatel CIT SA
Publication of DE69200147D1 publication Critical patent/DE69200147D1/de
Application granted granted Critical
Publication of DE69200147T2 publication Critical patent/DE69200147T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69200147T 1991-07-19 1992-07-13 Doppelkanal-Halbleiterlaser und sein Herstellungsverfahren. Expired - Fee Related DE69200147T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9109178A FR2679388B1 (fr) 1991-07-19 1991-07-19 Laser semi-conducteur a double canal et son procede de realisation.

Publications (2)

Publication Number Publication Date
DE69200147D1 true DE69200147D1 (de) 1994-06-30
DE69200147T2 DE69200147T2 (de) 1994-09-08

Family

ID=9415336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69200147T Expired - Fee Related DE69200147T2 (de) 1991-07-19 1992-07-13 Doppelkanal-Halbleiterlaser und sein Herstellungsverfahren.

Country Status (8)

Country Link
US (1) US5278858A (de)
EP (1) EP0523587B1 (de)
JP (1) JPH07114309B2 (de)
AT (1) ATE106169T1 (de)
CA (1) CA2073885C (de)
DE (1) DE69200147T2 (de)
ES (1) ES2056003T3 (de)
FR (1) FR2679388B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0639875A1 (de) * 1993-07-12 1995-02-22 BRITISH TELECOMMUNICATIONS public limited company Elektrische Sperrstruktur für Halbleiter-Vorrichtung
JPH07288361A (ja) * 1994-04-18 1995-10-31 Nec Kansai Ltd 半導体レーザ及びその製造方法
KR970054972A (ko) * 1995-12-29 1997-07-31 김주용 레이저 다이오드 제조방법
US5956360A (en) * 1997-03-28 1999-09-21 Lucent Technologies Inc. Uncooled lasers with reduced low bias capacitance effect
JP2003060309A (ja) * 2001-08-21 2003-02-28 Sumitomo Electric Ind Ltd 半導体レーザ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110085A (ja) * 1981-12-23 1983-06-30 Nec Corp 埋め込み形半導体レ−ザ
JPS59125684A (ja) * 1983-01-06 1984-07-20 Nec Corp 埋め込み形半導体レ−ザ
NL8401172A (nl) * 1984-04-12 1985-11-01 Philips Nv Halfgeleiderlaser.
JPS6346790A (ja) * 1986-08-15 1988-02-27 Nec Corp 埋込み型半導体レ−ザおよびその製造方法
NL8603009A (nl) * 1986-11-27 1988-06-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPH0666526B2 (ja) * 1988-07-28 1994-08-24 関西日本電気株式会社 半導体レーザダイオードとその製造方法
US4947400A (en) * 1989-06-26 1990-08-07 At&T Bell Laboratories Laser-photodetector assemblage
JPH03203282A (ja) * 1989-12-29 1991-09-04 Nec Kansai Ltd 半導体レーザダイオード

Also Published As

Publication number Publication date
ATE106169T1 (de) 1994-06-15
JPH07114309B2 (ja) 1995-12-06
FR2679388B1 (fr) 1995-02-10
CA2073885C (fr) 1996-07-30
FR2679388A1 (fr) 1993-01-22
DE69200147T2 (de) 1994-09-08
US5278858A (en) 1994-01-11
EP0523587B1 (de) 1994-05-25
ES2056003T3 (es) 1994-09-01
JPH05206576A (ja) 1993-08-13
CA2073885A1 (fr) 1993-01-20
EP0523587A1 (de) 1993-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US

8339 Ceased/non-payment of the annual fee