KR970054972A - 레이저 다이오드 제조방법 - Google Patents

레이저 다이오드 제조방법 Download PDF

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Publication number
KR970054972A
KR970054972A KR1019950066037A KR19950066037A KR970054972A KR 970054972 A KR970054972 A KR 970054972A KR 1019950066037 A KR1019950066037 A KR 1019950066037A KR 19950066037 A KR19950066037 A KR 19950066037A KR 970054972 A KR970054972 A KR 970054972A
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KR
South Korea
Prior art keywords
layer
inp
forming
laser diode
opening
Prior art date
Application number
KR1019950066037A
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English (en)
Inventor
이수원
조규석
김태진
오경석
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950066037A priority Critical patent/KR970054972A/ko
Priority to US08/756,566 priority patent/US5693558A/en
Priority to JP8353643A priority patent/JPH09326529A/ja
Publication of KR970054972A publication Critical patent/KR970054972A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0205—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth during growth of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 광통신용 반도체 레이저 다이오드 제조방법에 관한 것으로, InP계 매립형 이종접합 반도체 레이저 다이오드(PBH-LD)에서 소자 작동시 누설전류를 감소시킬 수 있는 전류차단층으로 형성하기 위하여 메사 구조 전체 구조 상부에 전류 차단층을 재성장시키고, 메사 구조 상부면에 개구부를 형성하는 기술이다.

Description

레이저 다이오드 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 실시예에 의해 레이저 다이오드를 제조하는 단계를 도시한 단면도.

Claims (2)

  1. 레이저 다이오드 제조방법에 있어서, n-InP 기판 상부에 n-InP 클래드층, 액티브층, p-InP 클래드층을 순차적으로 적층하고, 그 상부에 식각정지층을 형성하는 단계와, 상기 식각정지층 상부에 산화막 패턴을 형성하고, 이것을 마스크로 사용하여 상기 식각정치응에서 상기 n-InP 클래드층의 일정 두께까지 식각하여 메사구조를 형성하는 단계와, 상기 산화막 패턴을 제거하고, 메사 구조의 전체구조 상부에 전류 차단층으로 p-InP 층 및 n-InP층을 재성장시키는 단계와, 상기 n-InP층 상부에 상기 메사 구조 상부면이 노출되는 감광막 패턴을 형성하고, 상기 n-InP층과 p-InP층을 식각하여 개구부를 형성하는 단계와, 상기 감광막 패턴을 제거하고, 개구부의 저부면에 노출된 식각정지층을 제거하여 전류 주입 개구부를 형성하는 단계와, 전체 구조 상부면에 p-접촉층을 성장시키고, 그 상부에 콘택층을 증측하는 단계를 포함하는 레이저 다이오드 제조방법.
  2. 제1항에 있어서, 상기 n-InP층과 p-InP층을 건식 식각법으로 식각하여 개구부를 형성하는 것을 특징으로 하는 레이저 다이오드 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950066037A 1995-12-29 1995-12-29 레이저 다이오드 제조방법 KR970054972A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950066037A KR970054972A (ko) 1995-12-29 1995-12-29 레이저 다이오드 제조방법
US08/756,566 US5693558A (en) 1995-12-29 1996-11-26 Method for fabricating a laser diode
JP8353643A JPH09326529A (ja) 1995-12-29 1996-12-17 レーザーダイオード製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950066037A KR970054972A (ko) 1995-12-29 1995-12-29 레이저 다이오드 제조방법

Publications (1)

Publication Number Publication Date
KR970054972A true KR970054972A (ko) 1997-07-31

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Application Number Title Priority Date Filing Date
KR1019950066037A KR970054972A (ko) 1995-12-29 1995-12-29 레이저 다이오드 제조방법

Country Status (3)

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US (1) US5693558A (ko)
JP (1) JPH09326529A (ko)
KR (1) KR970054972A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217232B1 (en) 1998-03-24 2001-04-17 Micron Technology, Inc. Method and apparatus for aligning an optic fiber with an opto-electronic device
EP1134858A1 (en) * 2000-03-06 2001-09-19 Agilent Technologies Inc. a Delaware Corporation Buried mesa semiconductor device
SG102589A1 (en) * 2000-08-16 2004-03-26 Inst Materials Research & Eng Buried hetero-structure opto-electronic device
KR20050085290A (ko) 2002-12-20 2005-08-29 크리 인코포레이티드 자기정렬 콘택트 층을 포함하는 반도체 메사 구조를형성하는 방법과 그 관련된 소자
CN112438001B (zh) * 2018-07-31 2022-06-24 三菱电机株式会社 半导体激光装置的制造方法以及半导体激光装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63129683A (ja) * 1986-11-20 1988-06-02 Nippon Telegr & Teleph Corp <Ntt> 埋め込み構造半導体レ−ザの製造方法
FR2679388B1 (fr) * 1991-07-19 1995-02-10 Cit Alcatel Laser semi-conducteur a double canal et son procede de realisation.
JPH065975A (ja) * 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
JP2950028B2 (ja) * 1992-07-23 1999-09-20 日本電気株式会社 光半導体素子の製造方法
JP3250270B2 (ja) * 1992-09-11 2002-01-28 三菱化学株式会社 半導体レーザ素子及びその製造方法
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
JPH0750448A (ja) * 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
KR970011146B1 (ko) * 1993-10-06 1997-07-07 엘지전자 주식회사 반도체 레이저 다이오드 제조방법

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JPH09326529A (ja) 1997-12-16
US5693558A (en) 1997-12-02

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