ATE211315T1 - Halbleiterlaser mit mikroresonator - Google Patents
Halbleiterlaser mit mikroresonatorInfo
- Publication number
- ATE211315T1 ATE211315T1 AT96919295T AT96919295T ATE211315T1 AT E211315 T1 ATE211315 T1 AT E211315T1 AT 96919295 T AT96919295 T AT 96919295T AT 96919295 T AT96919295 T AT 96919295T AT E211315 T1 ATE211315 T1 AT E211315T1
- Authority
- AT
- Austria
- Prior art keywords
- micromember
- lasing
- semiconductor laser
- laser
- waveguiding
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002411 adverse Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
- H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/05—Function characteristic wavelength dependent
- G02F2203/055—Function characteristic wavelength dependent wavelength filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/450,284 US5825799A (en) | 1995-05-25 | 1995-05-25 | Microcavity semiconductor laser |
PCT/US1996/009807 WO1996037932A1 (en) | 1995-05-25 | 1996-05-21 | Microcavity semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE211315T1 true ATE211315T1 (de) | 2002-01-15 |
Family
ID=23787487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT96919295T ATE211315T1 (de) | 1995-05-25 | 1996-05-21 | Halbleiterlaser mit mikroresonator |
Country Status (8)
Country | Link |
---|---|
US (1) | US5825799A (de) |
EP (1) | EP0829119B1 (de) |
JP (1) | JPH11507471A (de) |
CN (1) | CN1103130C (de) |
AT (1) | ATE211315T1 (de) |
CA (1) | CA2220249A1 (de) |
DE (1) | DE69618189D1 (de) |
WO (1) | WO1996037932A1 (de) |
Families Citing this family (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6052495A (en) * | 1997-10-01 | 2000-04-18 | Massachusetts Institute Of Technology | Resonator modulators and wavelength routing switches |
US6078605A (en) * | 1998-02-20 | 2000-06-20 | Massachusetts Institute Of Technology | Track-changing utilizing phase response of resonators |
JP3658194B2 (ja) * | 1998-07-10 | 2005-06-08 | キヤノン株式会社 | リング共振器型レーザ |
WO2000050938A1 (en) | 1999-02-22 | 2000-08-31 | Massachusetts Institute Of Technology | Vertically coupled optical resonator devices over a cross-grid waveguide architecture |
US6831938B1 (en) * | 1999-08-30 | 2004-12-14 | California Institute Of Technology | Optical system using active cladding layer |
US6298180B1 (en) | 1999-09-15 | 2001-10-02 | Seng-Tiong Ho | Photon transistors |
US6473541B1 (en) | 1999-09-15 | 2002-10-29 | Seng-Tiong Ho | Photon transistors |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
GB0012167D0 (en) * | 2000-05-20 | 2000-07-12 | Secr Defence Brit | Improvements in photo detectors |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US7103245B2 (en) | 2000-07-10 | 2006-09-05 | Massachusetts Institute Of Technology | High density integrated optical chip |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
CA2354897A1 (en) * | 2000-08-11 | 2002-02-11 | Litton Systems, Inc. | Wedge-shaped microresonator and associated microlaser assembly |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US7330271B2 (en) * | 2000-11-28 | 2008-02-12 | Rosemount, Inc. | Electromagnetic resonant sensor with dielectric body and variable gap cavity |
GB2391617B (en) * | 2000-11-28 | 2005-05-18 | Rosemount Inc | Optical sensor for measuring physical and material properties |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US6865314B1 (en) | 2001-01-11 | 2005-03-08 | Steven M. Blair | Tunable optical wavelength filters and multi-level optical integrated circuits |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US7283707B1 (en) | 2001-07-25 | 2007-10-16 | Oewaves, Inc. | Evanescently coupling light between waveguides and whispering-gallery mode optical resonators |
US6603558B2 (en) | 2001-07-25 | 2003-08-05 | University Of Delaware | Micro-ring cavity gyroscope with magnetic field lock-in minimization |
US6462360B1 (en) | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US6853479B1 (en) | 2001-08-30 | 2005-02-08 | Oewaves, Inc. | Apparatus and method for coupling light between an optical resonator and a semiconductor chip with a minimum number of components and alignment steps |
WO2003065414A2 (en) * | 2002-01-30 | 2003-08-07 | Photon-X, Inc. | Microresonators made of nanoparticles with halogenated polymer coating embedded in halogenated polymer host matrix |
US6891865B1 (en) | 2002-02-15 | 2005-05-10 | Afonics Fibreoptics, Ltd. | Wavelength tunable laser |
US6934427B2 (en) * | 2002-03-12 | 2005-08-23 | Enablence Holdings Llc | High density integrated optical chip with low index difference waveguide functions |
US20030179981A1 (en) * | 2002-03-22 | 2003-09-25 | Lnl Technologies,Inc. | Tunable inorganic dielectric microresonators |
US6879752B1 (en) | 2002-04-03 | 2005-04-12 | Oewaves, Inc. | Film spacer for setting the gap between an optical coupler and a whispering-gallery mode optical resonator |
US20040037341A1 (en) * | 2002-08-21 | 2004-02-26 | Tan Michael R. | Laser utilizing a microdisk resonator |
US20050163185A1 (en) * | 2002-10-02 | 2005-07-28 | Vahala Kerry J. | Surface functionalization of micro-resonators |
AU2003304193A1 (en) * | 2002-10-02 | 2005-01-04 | California Institute Of Technology | Ultra-high q micro-resonator on silicon substrate and method of fabrication thereof |
US7781217B2 (en) * | 2002-10-02 | 2010-08-24 | California Institute Of Technology | Biological and chemical microcavity resonant sensors and methods of detecting molecules |
US20040081386A1 (en) * | 2002-10-25 | 2004-04-29 | Morse Michael T. | Method and apparatus for modulating an optical beam with a ring resonator having a charge modulated region |
US7043115B2 (en) * | 2002-12-18 | 2006-05-09 | Rosemount, Inc. | Tunable optical filter |
US6959028B2 (en) * | 2003-01-14 | 2005-10-25 | Intel Corporation | External cavity, widely tunable lasers and methods of tuning the same |
US7769071B2 (en) * | 2004-02-02 | 2010-08-03 | California Institute Of Technology | Silica sol gel micro-laser on a substrate |
CN100345030C (zh) * | 2004-12-13 | 2007-10-24 | 中国科学院上海技术物理研究所 | 三维光学微腔式单光子源 |
US7286734B2 (en) * | 2005-04-26 | 2007-10-23 | Harris Corporation | Optical microresonator with coupling elements for changing light direction |
US8155485B2 (en) * | 2005-07-20 | 2012-04-10 | The Invention Science Fund I Llc | Plasmon photocatalysis |
US7359585B2 (en) * | 2005-07-20 | 2008-04-15 | Searete Llc | Plasmon photocatalysis |
US7426322B2 (en) * | 2005-07-20 | 2008-09-16 | Searete Llc. | Plasmon photocatalysis |
US8798408B2 (en) | 2005-07-20 | 2014-08-05 | The Invention Science Fund I Llc | Plasmon photocatalysis |
US7406217B2 (en) * | 2005-07-20 | 2008-07-29 | Searete Llc | Plasmon photocatalysis |
US7295723B2 (en) * | 2005-07-20 | 2007-11-13 | Searete Llc | Plasmon photocatalysis |
US20090196561A1 (en) * | 2006-03-17 | 2009-08-06 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Photonic crystal surface states |
US7542633B2 (en) * | 2006-06-19 | 2009-06-02 | Searete Llc | Plasmon gate |
US7379634B2 (en) * | 2006-06-19 | 2008-05-27 | Searete Llc | Plasmon gate |
US20090226132A1 (en) * | 2006-06-19 | 2009-09-10 | Searete Llc | Plasmon gate |
US7505649B2 (en) * | 2006-06-19 | 2009-03-17 | Searete Llc | Plasmon router |
US7539374B2 (en) * | 2006-06-19 | 2009-05-26 | Searete Llc | Plasmon switch |
US7366373B2 (en) * | 2006-06-19 | 2008-04-29 | Searete Llc | Plasmon switch |
US7587107B2 (en) * | 2006-06-19 | 2009-09-08 | Searete Llc | Plasmon switch |
US7447392B2 (en) * | 2006-06-19 | 2008-11-04 | Searete Llc | Plasmon gate |
US7447396B2 (en) * | 2006-06-19 | 2008-11-04 | Searete Llc | Plasmon multiplexing |
CN100524981C (zh) * | 2006-11-01 | 2009-08-05 | 中国科学院半导体研究所 | 基于tm模激射的圆柱形结构的微盘激光器 |
CN101325311B (zh) * | 2007-06-15 | 2010-06-02 | 中国科学院半导体研究所 | 带输出波导的正方形微腔激光器 |
US7764852B2 (en) * | 2007-07-30 | 2010-07-27 | Hewlett-Packard Development Company, L.P. | Microresonantor systems and methods of fabricating the same |
US7561770B2 (en) * | 2007-07-30 | 2009-07-14 | Hewlett-Packard Development Company, L.P. | Microresonator systems and methods of fabricating the same |
JP5278868B2 (ja) * | 2007-09-18 | 2013-09-04 | 国立大学法人 東京大学 | 発光素子 |
CN101257185B (zh) * | 2008-02-28 | 2010-11-24 | 复旦大学 | 有机无机复合回音壁模式光学微腔激光器的制备方法 |
CN102017336B (zh) * | 2008-05-06 | 2012-07-04 | 惠普开发有限公司 | 微环形激光器系统和方法 |
CN101714744B (zh) * | 2009-11-20 | 2011-04-20 | 长春理工大学 | 非圆环形腔半导体激光器 |
JP5480192B2 (ja) * | 2011-03-31 | 2014-04-23 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP5631917B2 (ja) * | 2012-03-29 | 2014-11-26 | 株式会社東芝 | 光送受信システムおよび光受光ユニット |
CN103022896A (zh) * | 2012-12-17 | 2013-04-03 | 南京大学 | 一种微型复合结构激光器 |
EP3296805B1 (de) | 2013-06-12 | 2021-03-03 | Massachusetts Institute Of Technology | Optischer modulator aus standardherstellungsverfahren |
JP2015184375A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社東芝 | 光配線デバイスおよびその製造方法 |
CN104101945A (zh) * | 2014-07-23 | 2014-10-15 | 宁波屹诺电子科技有限公司 | 一种基于水平狭缝光波导的微盘谐振腔及其制作方法 |
WO2017058319A2 (en) | 2015-06-30 | 2017-04-06 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
US11105974B2 (en) | 2015-06-30 | 2021-08-31 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
KR102384228B1 (ko) * | 2015-09-30 | 2022-04-07 | 삼성전자주식회사 | 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자 |
US9678276B1 (en) * | 2016-01-07 | 2017-06-13 | Wisconsin Alumni Research Foundation | All-glass on-chip high quality-factor optical microresonator |
CN105591284B (zh) * | 2016-01-18 | 2019-05-21 | 华中科技大学 | 光栅辅助的微柱腔面发射激光器 |
WO2017200620A2 (en) * | 2016-02-29 | 2017-11-23 | Stc.Unm | Ring laser integrated with silicon-on-insulator waveguide |
KR20170105999A (ko) * | 2016-03-11 | 2017-09-20 | 한국전자통신연구원 | 자체 모드 잠김 레이저 시스템 |
US9871341B2 (en) * | 2016-05-17 | 2018-01-16 | International Business Machines Corporation | Laser on silicon made with 2D material gain medium |
CN106124096B (zh) | 2016-06-12 | 2019-03-12 | 京东方科技集团股份有限公司 | 光学微腔、力测量装置及方法、模量测量方法及显示面板 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3934148A (en) * | 1974-05-28 | 1976-01-20 | Collins William O | Fluorescent plastic controlled direction lamp |
CA2068899C (en) * | 1991-09-17 | 1997-06-17 | Samuel Leverte Mccall | Whispering mode micro-resonator |
JPH05129720A (ja) * | 1991-11-07 | 1993-05-25 | Hitachi Ltd | 半導体レーザ装置 |
US5216727A (en) * | 1992-05-08 | 1993-06-01 | At&T Bell Laboratories | Integrated nonlinear waveguide spectrometer |
JPH08505707A (ja) * | 1993-01-08 | 1996-06-18 | マサチユセツツ・インスチチユート・オブ・テクノロジー | 低損失光及び光電子集積回路 |
US5351261A (en) * | 1993-04-14 | 1994-09-27 | At&T Bell Laboratories | Integrated optics |
US5398256A (en) * | 1993-05-10 | 1995-03-14 | The United States Of America As Represented By The United States Department Of Energy | Interferometric ring lasers and optical devices |
DE69401492T2 (de) * | 1993-09-10 | 1997-07-17 | Philips Electronics Nv | Ringlaser |
-
1995
- 1995-05-25 US US08/450,284 patent/US5825799A/en not_active Expired - Fee Related
-
1996
- 1996-05-21 EP EP96919295A patent/EP0829119B1/de not_active Expired - Lifetime
- 1996-05-21 DE DE69618189T patent/DE69618189D1/de not_active Expired - Lifetime
- 1996-05-21 CA CA002220249A patent/CA2220249A1/en not_active Abandoned
- 1996-05-21 AT AT96919295T patent/ATE211315T1/de not_active IP Right Cessation
- 1996-05-21 CN CN96194150A patent/CN1103130C/zh not_active Expired - Fee Related
- 1996-05-21 WO PCT/US1996/009807 patent/WO1996037932A1/en active IP Right Grant
- 1996-05-21 JP JP8535953A patent/JPH11507471A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CN1185238A (zh) | 1998-06-17 |
EP0829119A4 (de) | 1998-09-02 |
CN1103130C (zh) | 2003-03-12 |
JPH11507471A (ja) | 1999-06-29 |
US5825799A (en) | 1998-10-20 |
EP0829119A1 (de) | 1998-03-18 |
WO1996037932A1 (en) | 1996-11-28 |
CA2220249A1 (en) | 1996-11-28 |
DE69618189D1 (de) | 2002-01-31 |
EP0829119B1 (de) | 2001-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE211315T1 (de) | Halbleiterlaser mit mikroresonator | |
DE69731475D1 (de) | Frequenzverdoppelter Laser mit einem quasiphasenangepassten nichtlinearen Element innerhalb des Resonators | |
DK1371118T3 (da) | Smalbånds fiberlaser med höj power | |
DE69112725T2 (de) | Laserdiode mit abstimmbarer Wellenlänge. | |
ATE116767T1 (de) | Im flüstergalerie-mode angeregter mikroresonator. | |
DE69808192D1 (de) | Intern optisch gepumpter, feldmodulierter, oberflächenemittierender Laser mit vertikalem Resonator | |
DE60118974D1 (de) | Räumlich modulierter reflektor für eine optoelektronische vorrichtung | |
ATE75351T1 (de) | Optisches resonanzbauelement. | |
EP0917262A3 (de) | Wellenlängen wählbarer Laserquelle | |
WO2003065625A3 (en) | Fiber ring amplifiers and lasers | |
EP1146615A4 (de) | Leuchtendes element und modul mit leuchtenden elementen | |
DE69109141D1 (de) | Laserdiode mit stabilisiertem Transversal-Mode. | |
EP1130717A3 (de) | Halbleiterlaserquelle mit externem Resonator | |
ATE82654T1 (de) | Frequenz-gekoppelte laser-lichtquelle. | |
ES2184003T3 (es) | Laser con cavidad resonadora unica para medio laser de bomba y para oscilador optico parametrico. | |
EP0623980A3 (de) | Transversalemittierender Halbleiterlaser und Kopplung an einem Lichtwellenleiter. | |
DE60227940D1 (de) | Integrierter optischer bauteil zur kopplung | |
WO2003096499A3 (en) | Semiconductor laser | |
ES2055078T3 (es) | Sistemas laser. | |
DE59704083D1 (de) | Diodenlasergepumpter vielmoden-wellenleiterlaser, insbesondere faserlaser | |
WO2003007437A3 (en) | Chirp-free directly modulated light source with integrated wavelocker | |
EP0911924A3 (de) | Laserlichtquelle mit externem Resonator | |
US20050012982A1 (en) | Wavelength converter/inverter | |
WO2001015287A3 (en) | Semiconductor laser | |
SE0002664D0 (sv) | Optical coupler with a new geometry |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |