ES2043994T3 - Fuente laser con semi-conductor modulado de frecuencia elevada. - Google Patents
Fuente laser con semi-conductor modulado de frecuencia elevada.Info
- Publication number
- ES2043994T3 ES2043994T3 ES89116283T ES89116283T ES2043994T3 ES 2043994 T3 ES2043994 T3 ES 2043994T3 ES 89116283 T ES89116283 T ES 89116283T ES 89116283 T ES89116283 T ES 89116283T ES 2043994 T3 ES2043994 T3 ES 2043994T3
- Authority
- ES
- Spain
- Prior art keywords
- laser
- conductor
- high frequency
- laser source
- frequency modulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06213—Amplitude modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Abstract
UN LASER SEMI-CONDUCTOR (2) CONSTITUYE UNA FUENTE MONOLITICA CUYA INTENSIDAD ESTA MODULADA A UNA FRECUENCIA SITUADA EN EL CAMPO DE LAS HIPERFRECUENCIAS, TIPICAMENTE DE 10-20 A 100 GHZ. SE BASA EN EL ACOPLAMIENTO DE LOS MODOS LONGITUDINALES DEL LASER, OBTENIENDOSE LA MODULACION DE INTENSIDAD POR LA PULSACION DE LOS DIFERENTES MODOS DEL LASER. LA OPTIMIZACION Y EL CONTROL DEL LASER SE CONSIGUE MEDIANTE UNA DIVISION DE LA CAVIDAD OPTICA (6,8,10) DEL LASER EN SECCIONES SUCESIVAS (20,22,24). EL INVENTO SE APLICA ESPECIALMENTE EN LAS TELECOMUNICACIONES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8811741A FR2636177B1 (fr) | 1988-09-08 | 1988-09-08 | Source laser a semi-conducteur modulee a frequence elevee |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2043994T3 true ES2043994T3 (es) | 1994-01-01 |
Family
ID=9369821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES89116283T Expired - Lifetime ES2043994T3 (es) | 1988-09-08 | 1989-09-04 | Fuente laser con semi-conductor modulado de frecuencia elevada. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5007062A (es) |
EP (1) | EP0358144B1 (es) |
AT (1) | ATE94002T1 (es) |
CA (1) | CA1311820C (es) |
DE (1) | DE68908817T2 (es) |
ES (1) | ES2043994T3 (es) |
FR (1) | FR2636177B1 (es) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4010823A1 (de) * | 1990-04-04 | 1991-10-10 | Standard Elektrik Lorenz Ag | Modensynchronisierter halbleiterlaser |
FR2683401B1 (fr) * | 1991-10-31 | 1993-12-31 | Alcatel Nv | Generateur optique, notamment pour le transport d'un signal hyperfrequence. |
US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
US6868101B1 (en) * | 1996-09-13 | 2005-03-15 | Kol Ohr Corporation | Low cost means of modulating a laser |
WO2001004999A1 (en) | 1999-07-07 | 2001-01-18 | Cyoptics Ltd. | Laser wavelength stabilization |
EP1130718A3 (en) | 2000-01-20 | 2003-07-02 | Cyoptics (Israel) Ltd. | Tunable frequency stabilized fiber grating laser |
EP1130726A3 (en) * | 2000-01-28 | 2003-04-23 | The Furukawa Electric Co., Ltd. | Distributed feedback semiconductor laser device and multi-wavelength laser array |
DE60222138T2 (de) * | 2001-07-30 | 2008-05-21 | Bookham Technology Plc., Towcester | Abstimmbarer laser |
US6862136B2 (en) | 2002-01-31 | 2005-03-01 | Cyoptics Ltd. | Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier |
JP3801073B2 (ja) * | 2002-03-11 | 2006-07-26 | 日本電気株式会社 | 外部共振器型波長可変パルス光源 |
US6954558B2 (en) * | 2003-06-24 | 2005-10-11 | Intel Corporation | Method and apparatus for phase shifting an optical beam in an optical device |
US6801676B1 (en) * | 2003-06-24 | 2004-10-05 | Intel Corporation | Method and apparatus for phase shifting an optical beam in an optical device with a buffer plug |
US7035487B2 (en) * | 2004-06-21 | 2006-04-25 | Intel Corporation | Phase shifting optical device with dopant barrier |
US7280712B2 (en) * | 2005-08-04 | 2007-10-09 | Intel Corporation | Method and apparatus for phase shifiting an optical beam in an optical device |
US20070280309A1 (en) * | 2006-05-23 | 2007-12-06 | Ansheng Liu | Optical waveguide with single sided coplanar contact optical phase modulator |
JP5303124B2 (ja) * | 2007-07-19 | 2013-10-02 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ装置の制御方法 |
JP5154688B2 (ja) * | 2008-04-11 | 2013-02-27 | グーグル・インコーポレーテッド | 外部キャビティレーザにおける光信号の振幅変調を抑えるための方法および装置 |
US8450186B2 (en) * | 2009-09-25 | 2013-05-28 | Intel Corporation | Optical modulator utilizing wafer bonding technology |
US10886698B2 (en) * | 2016-10-17 | 2021-01-05 | Centre National De La Recherche Scientifique | Laser source and method of manufacturing such |
JP6927153B2 (ja) * | 2018-05-30 | 2021-08-25 | 日本電信電話株式会社 | 半導体レーザ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0632332B2 (ja) * | 1984-08-24 | 1994-04-27 | 日本電気株式会社 | 半導体レ−ザ装置 |
JPS6155981A (ja) * | 1984-08-27 | 1986-03-20 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体発光素子 |
JPH0626276B2 (ja) * | 1985-01-14 | 1994-04-06 | 日本電気株式会社 | レ−ザ光直接周波数変調方法 |
JPH0831653B2 (ja) * | 1987-07-21 | 1996-03-27 | 国際電信電話株式会社 | 半導体レ−ザ |
-
1988
- 1988-09-08 FR FR8811741A patent/FR2636177B1/fr not_active Expired - Lifetime
-
1989
- 1989-09-04 ES ES89116283T patent/ES2043994T3/es not_active Expired - Lifetime
- 1989-09-04 AT AT89116283T patent/ATE94002T1/de not_active IP Right Cessation
- 1989-09-04 DE DE89116283T patent/DE68908817T2/de not_active Expired - Fee Related
- 1989-09-04 EP EP89116283A patent/EP0358144B1/fr not_active Expired - Lifetime
- 1989-09-06 US US07/403,745 patent/US5007062A/en not_active Expired - Lifetime
- 1989-09-07 CA CA000610656A patent/CA1311820C/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5007062A (en) | 1991-04-09 |
ATE94002T1 (de) | 1993-09-15 |
EP0358144B1 (fr) | 1993-09-01 |
FR2636177B1 (fr) | 1990-11-16 |
CA1311820C (fr) | 1992-12-22 |
DE68908817T2 (de) | 1994-02-10 |
DE68908817D1 (de) | 1993-10-07 |
FR2636177A1 (fr) | 1990-03-09 |
EP0358144A1 (fr) | 1990-03-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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