DE68908817D1 - Mit einer hohen Frequenz modulierte Halbleiterlaserquelle. - Google Patents

Mit einer hohen Frequenz modulierte Halbleiterlaserquelle.

Info

Publication number
DE68908817D1
DE68908817D1 DE89116283T DE68908817T DE68908817D1 DE 68908817 D1 DE68908817 D1 DE 68908817D1 DE 89116283 T DE89116283 T DE 89116283T DE 68908817 T DE68908817 T DE 68908817T DE 68908817 D1 DE68908817 D1 DE 68908817D1
Authority
DE
Germany
Prior art keywords
laser
semiconductor laser
high frequency
laser source
source modulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89116283T
Other languages
English (en)
Other versions
DE68908817T2 (de
Inventor
Jose Chesnoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Alcatel NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel NV filed Critical Alcatel NV
Publication of DE68908817D1 publication Critical patent/DE68908817D1/de
Application granted granted Critical
Publication of DE68908817T2 publication Critical patent/DE68908817T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
DE89116283T 1988-09-08 1989-09-04 Mit einer hohen Frequenz modulierte Halbleiterlaserquelle. Expired - Fee Related DE68908817T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8811741A FR2636177B1 (fr) 1988-09-08 1988-09-08 Source laser a semi-conducteur modulee a frequence elevee

Publications (2)

Publication Number Publication Date
DE68908817D1 true DE68908817D1 (de) 1993-10-07
DE68908817T2 DE68908817T2 (de) 1994-02-10

Family

ID=9369821

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89116283T Expired - Fee Related DE68908817T2 (de) 1988-09-08 1989-09-04 Mit einer hohen Frequenz modulierte Halbleiterlaserquelle.

Country Status (7)

Country Link
US (1) US5007062A (de)
EP (1) EP0358144B1 (de)
AT (1) ATE94002T1 (de)
CA (1) CA1311820C (de)
DE (1) DE68908817T2 (de)
ES (1) ES2043994T3 (de)
FR (1) FR2636177B1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4010823A1 (de) * 1990-04-04 1991-10-10 Standard Elektrik Lorenz Ag Modensynchronisierter halbleiterlaser
FR2683401B1 (fr) * 1991-10-31 1993-12-31 Alcatel Nv Generateur optique, notamment pour le transport d'un signal hyperfrequence.
US5379318A (en) * 1994-01-31 1995-01-03 Telefonaktiebolaget L M Ericsson Alternating grating tunable DBR laser
US6868101B1 (en) * 1996-09-13 2005-03-15 Kol Ohr Corporation Low cost means of modulating a laser
EP1118143A1 (de) 1999-07-07 2001-07-25 Cyoptics Ltd. Laserwellenlängenstabilisierung
EP1130718A3 (de) 2000-01-20 2003-07-02 Cyoptics (Israel) Ltd. Stabilisierter frequenzverstimmbarer Laser mit Fasergitter
EP1130726A3 (de) * 2000-01-28 2003-04-23 The Furukawa Electric Co., Ltd. Halbleiterlaservorrichtung mit verteilter Rückkopplung und Mehrwellenlängenvielfachlaser
DE60222138T2 (de) * 2001-07-30 2008-05-21 Bookham Technology Plc., Towcester Abstimmbarer laser
US6862136B2 (en) 2002-01-31 2005-03-01 Cyoptics Ltd. Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier
JP3801073B2 (ja) * 2002-03-11 2006-07-26 日本電気株式会社 外部共振器型波長可変パルス光源
US6954558B2 (en) * 2003-06-24 2005-10-11 Intel Corporation Method and apparatus for phase shifting an optical beam in an optical device
US6801676B1 (en) * 2003-06-24 2004-10-05 Intel Corporation Method and apparatus for phase shifting an optical beam in an optical device with a buffer plug
US7035487B2 (en) * 2004-06-21 2006-04-25 Intel Corporation Phase shifting optical device with dopant barrier
US7280712B2 (en) * 2005-08-04 2007-10-09 Intel Corporation Method and apparatus for phase shifiting an optical beam in an optical device
US20070280309A1 (en) * 2006-05-23 2007-12-06 Ansheng Liu Optical waveguide with single sided coplanar contact optical phase modulator
JP5303124B2 (ja) * 2007-07-19 2013-10-02 住友電工デバイス・イノベーション株式会社 半導体レーザ装置の制御方法
CA2720036C (en) * 2008-04-11 2016-06-21 Paolo Baroni Method and apparatus for reducing the amplitude modulation of optical signals in external cavity lasers
US8450186B2 (en) * 2009-09-25 2013-05-28 Intel Corporation Optical modulator utilizing wafer bonding technology
WO2018073634A1 (en) * 2016-10-17 2018-04-26 Centre National De La Recherche Scientifique Laser source and method of manufacturing such
JP6927153B2 (ja) * 2018-05-30 2021-08-25 日本電信電話株式会社 半導体レーザ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
JPS6155981A (ja) * 1984-08-27 1986-03-20 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JPH0626276B2 (ja) * 1985-01-14 1994-04-06 日本電気株式会社 レ−ザ光直接周波数変調方法
JPH0831653B2 (ja) * 1987-07-21 1996-03-27 国際電信電話株式会社 半導体レ−ザ

Also Published As

Publication number Publication date
FR2636177A1 (fr) 1990-03-09
EP0358144B1 (de) 1993-09-01
FR2636177B1 (fr) 1990-11-16
ES2043994T3 (es) 1994-01-01
DE68908817T2 (de) 1994-02-10
ATE94002T1 (de) 1993-09-15
EP0358144A1 (de) 1990-03-14
US5007062A (en) 1991-04-09
CA1311820C (fr) 1992-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US

8339 Ceased/non-payment of the annual fee